C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2011
11/30/2011	CN102260905A 一种制备Ge纳米管的方法 A method of preparing Ge nanotubes
11/30/2011	CN102260903A 一种生长薄板硅晶体的方法 A method for the growth of the silicon crystal thin
11/30/2011	CN102260900A 提高单晶硅纵向电阻率一致性的装置及其处理工艺 Improve the consistency of single-crystal silicon longitudinal resistivity device and treatment process
11/30/2011	CN102260898A 一种p25包覆的二氧化钛纳米管阵列电极材料制备工艺 Titania nanotube array electrode preparation process a material coated p25
11/30/2011	CN102260897A 一种二氧化钛纳米管阵列薄膜及其制备方法 A two-titania nanotube array film and preparation method
11/30/2011	CN102259190A 一种快速大批量制备高长径比纳米银线的方法 A rapid method for the preparation of large quantities of high aspect ratio of silver nanowires
11/30/2011	CN101760779B 一种采用液态滤网提纯多晶硅的方法 The method of purifying a liquid filter polysilicon
11/30/2011	CN101736402B 竹节状三维分叉纳米线的制备方法 Preparation bamboo-like three-dimensional bifurcation nanowires
11/30/2011	CN101724894B 一种GaAs基InAs<sub>1-x</sub>Sb<sub>x</sub>/InSb多量子阱薄膜的分子束外延生长方法 One kind of GaAs-based InAs <sub> 1-x </ sub> Sb <sub> x </ sub> / InSb quantum wells more films molecular beam epitaxy method
11/30/2011	CN101660201B 一种多晶硅铸锭炉保温系统 One kind of polycrystalline silicon ingot furnace insulation system
11/30/2011	CN101613882B 制备硫化铋纳米棒晶体材料的方法 Preparation of bismuth sulfide nanorods crystal material way
11/30/2011	CN101602505B 一种用于多晶硅生产领域的防止硅液漏流用坩埚托 Prevent fluid leakage silicon crucible care for polysilicon production areas
11/30/2011	CN101580960B 一种钛镍两元合金单晶的制备方法 Preparation of a titanium-nickel alloy single crystal of two dollars
11/30/2011	CN101560696B 一种掺钬、铬、铒、铥钇铝石榴石激光晶体及其制备方法 Holmium-doped, chromium, erbium, thulium and yttrium aluminum garnet laser crystal and preparation method
11/30/2011	CN101006206B 硅片及其制造方法，以及硅单晶的培育方法 Wafer manufacturing method thereof, and silicon single crystal cultivation method
11/29/2011	US8067300 AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same
11/29/2011	CA2619554C Process for making organic photosensitive pigment
11/29/2011	CA2581856C Low micropipe 100 mm silicon carbide wafer
11/29/2011	CA2511670C Tunable cvd diamond structures
11/24/2011	WO2011145279A1 Silicon epitaxial wafer and method for producing same
11/24/2011	WO2011143702A1 Methods of crystallising perforin
11/24/2011	WO2011143701A1 Crystal structure of perforin and methods for its use as a structural model
11/24/2011	WO2011102627A3 SINGLE CRYSTAL ZnMgAlO THIN FILM FOR ULTRAVIOLET RAYS, WHICH IS LATTICE MATCHED TO ZnO, AND PREPARATION METHOD THEREOF
11/24/2011	WO2011050170A3 Crystal growth methods and systems
11/24/2011	WO2010094371A3 Relaxation and transfer of strained material layers
11/24/2011	CA2799720A1 Methods of crystallising perforin
11/23/2011	EP2388802A1 Inside reforming substrate for epitaxial growth; crystal film forming element, device, and bulk substrate produced using the same; and method for producing the same
11/23/2011	EP2388359A2 Method and system with seed holder for growing silicon carbide single crystals
11/23/2011	EP1468128B1 Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material
11/23/2011	CN202047173U Doping device applicable to light-dope and medium-and-high-resistance czochralski silicon monocrystal
11/23/2011	CN202047172U Power supply circuit for ultrahigh temperature device of polycrystalline ingot casting furnace
11/23/2011	CN202047171U Novel argon inlet pipeline for polycrystalline ingot furnace
11/23/2011	CN202047169U Seed crystal for monocrystalline silicon growth
11/23/2011	CN202047168U Seed holder for monocrystalline silicon growth
11/23/2011	CN202047167U Device capable of reducing shaking of monocrystalline silicon in drawing process
11/23/2011	CN1997778B Preparation of nanoparticle materials
11/23/2011	CN102257191A A method to control the dispersibility and barrier properties of dried nanocrystalline cellulose in solutions of different ph and ionic strength
11/23/2011	CN102257190A Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device
11/23/2011	CN102257189A Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof
11/23/2011	CN102251288A Polycrystalline silicon ingot growing method, crucible for polycrystalline silicon ingot, and preparation method for polycrystalline silicon ingot
11/23/2011	CN102251286A Micron/nanocone array of germanium and preparation method thereof
11/23/2011	CN102251284A Method for preparing beta-silicon nitride whiskers
11/23/2011	CN102251283A Single crystal zinc antimonide nano comb with high thermoelectric figure of merit and preparation method thereof
11/23/2011	CN102251282A Method for preparing nano-micro sheet/plate shaped pyrite crystals under hydrothermal condition
11/23/2011	CN102251281A Process for Producing Zno Single Crystal According to Method of Liquid Phase Growth ?
11/23/2011	CN102251280A Thermally-stable hydroxyapatite whisker and preparation method thereof
11/23/2011	CN102251279A Ferromagnetic semiconductor crystal and preparation method thereof
11/23/2011	CN102251278A Controllable preparation method of monocrystal copper nanowires
11/23/2011	CN102251277A Zinc oxide transparent conductive film and production method thereof
11/23/2011	CN102251276A Seed crystal for reducing necking length of solar grade direct-pull single crystal silicon
11/23/2011	CN102251273A Molten salt growth method of rutile crystal
11/23/2011	CN102251242A Method for cleaning polycrystalline silicon
11/23/2011	CN101775659B Process for preparing mullite whisker or flaky alumina by using coal ash
11/23/2011	CN101736399B Method for preparing tin oxide single crystal film with orthogonal structure
11/23/2011	CN101724886B Growth method of gallium arsenide monocrystal or germanium arsenide monocrystal
11/23/2011	CN101643936B Horizontal growth method for lead tungstate scintillation crystal
11/23/2011	CN101619484B Method for growing single crystal indium oxide film on conductive substrate
11/23/2011	CN101550586B Growing technique of ZnTe monocrystal
11/23/2011	CN101532178B CdS nano line array preparation method based on flexible metal base plate
11/23/2011	CN101384756B Process for producing zno single crystal according to method of liquid phase growth
11/23/2011	CN101298696B Method for preparing single crystal granule tungsten carbide
11/23/2011	CN101255603B Method for preparing II-VI family semiconductor nano-wire by template electric-sedimentation
11/23/2011	CN101255600B Method for preparing ZnO-based diluted magnetic semiconductor nano-wire array
11/23/2011	CN101144186B Method for synthesizing potassium hexatitanate crystal whisker
11/23/2011	CN101026092B Substrate for growing pendeo epitaxy and method of forming the same
11/22/2011	US8063114 Inorganic mesoporous material having chiral twisted structure and process for producing the same
11/22/2011	US8062703 Preparation of nanoparticle materials
11/22/2011	US8062694 Method for producing memory having a solid electrolyte material region
11/22/2011	US8062421 Shaped nanocrystal particles and methods for making the same
11/22/2011	US8062420 Nonlinear optical crystals and their manufacture and use
11/22/2011	US8062419 Rare-earth oxyorthosilicate scintillator crystals and method of making rare-earth oxyorthosilicate scintillator crystals
11/17/2011	WO2011142470A1 Epitaxial silicon carbide single-crystal substrate and method for producing the same
11/17/2011	WO2011142402A1 Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal
11/17/2011	WO2011142158A1 Process for production of silicon carbide substrate, process for production of semiconductor device, silicon carbide substrate, and semiconductor device
11/17/2011	WO2011140668A1 3d nanocrystals and manufacturing methods
11/17/2011	US20110277680 Artificial corundum crystal
11/17/2011	CA2830589A1 3d nanocrystals and manufacturing methods
11/17/2011	CA2768285A1 Silicon carbide substrate fabrication method, semiconductor device fabrication method, silicon carbide substrate, and semiconductor device
11/16/2011	EP1310584B1 MgB2 SINGLE CRYSTAL AND ITS PRODUCTION METHOD, AND SUPERCONDUCTIVE MATERIAL CONTAINING MgB2 SINGLE CRYSTAL
11/16/2011	CN202041084U Carbon/carbon composite material thermal insulation cylinder
11/16/2011	CN202039164U Connecting electrode of polycrystalline silicon ingot furnace
11/16/2011	CN202039162U Lower furnace body lifting device of polycrystalline silicon ingot casting furnace
11/16/2011	CN202039161U Heat-insulating barrel lifting device for polycrystalline silicon ingot casting furnace
11/16/2011	CN202039160U Infrared thermometer-mounting mechanism for polycrystalline silicon ingot furnaces
11/16/2011	CN202039157U Bell jar type hot-wall silicon carbide high-temperature epitaxial wafer growing device
11/16/2011	CN202039153U Thermal system used for manufacture of heavily doped silicon single crystal
11/16/2011	CN202039149U Crucible side plate of polycrystalline silicon ingot casting furnace
11/16/2011	CN102245816A Iridescent solid nanocrystalline cellulose films incorporating patterns and method for their production
11/16/2011	CN102245815A Redispersible dried nanocrystalline cellulose
11/16/2011	CN102245814A Method for producing nitride compound semiconductor substrate, and nitride compound semiconductor free-standing substrate
11/16/2011	CN102245813A Improved axial gradient transport (AGT) growth process and apparatus utilizing resistive heating
11/16/2011	CN102245730A Abrasive particles having a unique morphology
11/16/2011	CN102242400A Method for preparing monocrystalline CaTiO3 dendrite
11/16/2011	CN102242399A Annealing method of yttrium vanadate crystal
11/16/2011	CN102242398A Method for controlling YVO4 series crystal growth automatically
11/16/2011	CN102242397A Process for producing Czochralski silicon single crystal
11/16/2011	CN102242395A Continuous feeding device for growth of silicon single crystal and single crystal furnace equipped with same
11/16/2011	CN102242394A Casting method for producing furnace feeding silicon material similar to monocrystalline silicon ingot and seed crystal placing method
11/16/2011	CN102242393A Method for controlling bottom temperature of silicon ingot furnace in process of producing quasi-single crystal by casting method
11/16/2011	CN102242392A Method for producing quasi-single crystal silicon with casting method and stabilizing crystal seed at furnace bottom after melting in ingot furnace

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