| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 02/22/2012 | CN101724906B 一种用于生长高质量导电型碳化硅晶体的方法 A high conductivity type silicon carbide crystal growth method for |
| 02/22/2012 | CN101511731B 用于提纯低级硅材料的方法和装置 Method and apparatus for the purification of low-grade silicon material |
| 02/22/2012 | CN101448984B 制造碳化硅单晶的方法 The method of producing a silicon carbide single crystal, |
| 02/21/2012 | US8119505 Method of making group III nitride-based compound semiconductor |
| 02/21/2012 | US8119241 Method for manufacturing diamond monocrystal having a thin film, and diamond monocrystal having a thin film |
| 02/21/2012 | US8118934 Non-polar III-V nitride material and production method |
| 02/21/2012 | CA2712356C Aluminum alloy sheet with excellent formability and paint bake hardenability and method for production thereof |
| 02/16/2012 | WO2012021803A1 Method for using ref protein as a targeted reca-dependent nuclease |
| 02/16/2012 | WO2012021608A2 Temperature and field stable relaxor-pt piezoelectric single crystals |
| 02/16/2012 | WO2012020681A1 Object to be treated introduction device |
| 02/16/2012 | WO2012020676A1 Polycrystalline aluminum nitride base material for gan-base semiconductor crystal growth and gan-base semiconductor production method using same |
| 02/16/2012 | WO2012020462A1 Electromagnetic casting apparatus for silicon |
| 02/16/2012 | WO2012019418A1 Nonlinear optical crystal of potassium chloroborate, the production methods and uses thereof |
| 02/16/2012 | US20120040511 AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AND METHOD OF PRODUCING SAME |
| 02/16/2012 | DE102006052961B4 Verfahren zur Herstellung eines Halbleiterkristalls A process for producing a semiconductor crystal |
| 02/16/2012 | DE102005060391B4 Ein Apparat zur Herstellung eines Einkristalls und ein Verfahren zur Herstellung eines Einkristalls An apparatus for producing a single crystal and a method for producing a single crystal |
| 02/16/2012 | CA2807747A1 Anti-microbial metal organic frameworks |
| 02/15/2012 | EP2418307A2 Method and apparatus for forming single crystals |
| 02/15/2012 | EP2418306A2 Method for forming a single crystal |
| 02/15/2012 | EP2418173A2 Method for controlling resistivity in ingots made of compensated feedstock silicon |
| 02/15/2012 | EP2418170A2 Method for arranging fine particles on substrate by physical pressure |
| 02/15/2012 | EP2418169A2 Method for manufacturing printed product by aligning and printing fine particles |
| 02/15/2012 | EP2297384B1 Method of preparing luminescent nanocrystals |
| 02/15/2012 | EP1770190B1 METHOD OF FABRICATING RE-Ba-Cu-O SUPERCONDUCTOR |
| 02/15/2012 | CN202144523U 一种提高单晶硅纵向电阻率一致性的装置 A longitudinal resistivity of single-crystal silicon devices to improve consistency |
| 02/15/2012 | CN102356186A Germanium ingots/wafers having low micro-pit density (mpd) as well as systems and methods for manufacturing same |
| 02/15/2012 | CN102352536A Znte single crystal substrate |
| 02/15/2012 | CN102352535A Method for preparing calcium sulfate crystal whiskers from desulfurized gypsum under normal pressure |
| 02/15/2012 | CN102352534A Growing device of garnet-type single crystal |
| 02/15/2012 | CN102352533A Novel nonlinear optical crystal beryllium-sodium-cesium borate |
| 02/15/2012 | CN102352532A Non-linear optical crystal calcium sodium borate and preparation method and application thereof |
| 02/15/2012 | CN102352531A Crucible spraying free-sintering polycrystal ingot casting process |
| 02/15/2012 | CN102352530A Heat shield device for CZ-Si single crystal furnace |
| 02/15/2012 | CN102352529A Double-upper furnace body continuous charging silicon single crystal furnace and application method thereof |
| 02/15/2012 | CN102352528A Method for extracting phosphorite co-production gypsum whisker by utilizing nitric acid |
| 02/15/2012 | CN102352527A Method for growing zinc oxide crystals through induction heating and pressure |
| 02/15/2012 | CN102351851A 4-(5-dimethylaminothiophenevinyl)methylpyridine sulfonate, second-order nonlinear optical crystal of 4-(5-dimethylaminothiophenevinyl)methylpyridine sulfonate, and their preparation methods |
| 02/15/2012 | CN102351184A Method for recovering silicon carbide, high-purity silicon and dispersion liquid from silicon material linear cutting waste mortar |
| 02/15/2012 | CN102351169A Systems and methods for nanowire growth and harvesting |
| 02/15/2012 | CN101935875B 一种Sn掺杂的ZnO超细纳米线及其合成方法 One kind of doped ZnO Ultrafine Sn nanowires and synthesis method |
| 02/15/2012 | CN101922044B 一种在二氧化钛纳米管中掺杂纳米银颗粒的方法 A silver nanoparticles doped titania nanotubes in the method |
| 02/15/2012 | CN101871125B 高温稀土氧化物激光晶体及其制备方法 Rare earth oxide high-temperature laser crystal and preparation method |
| 02/15/2012 | CN101845669B 单晶多层片状WO<sub>3</sub>的水热合成法 Crystal multilayer sheet WO <sub> 3 </ sub> hydrothermal synthesis method |
| 02/15/2012 | CN101787558B 一种K<sub>2</sub>Al<sub>2</sub>B<sub>2</sub>O<sub>7</sub>晶体的助熔剂生长方法 Flux growth method of K <sub> 2 </ sub> Al <sub> 2 </ sub> B <sub> 2 </ sub> O <sub> 7 </ sub> crystals |
| 02/15/2012 | CN101613883B 一种u型共轭分子单晶及其制备方法 One kind of u-conjugated molecule crystal and preparation method |
| 02/15/2012 | CN101562214B 二氧化钛纳米管阵列掺杂方法 Titania nanotube arrays doping methods |
| 02/15/2012 | CN101503823B 掺镱四钼钨酸铋钠/钾激光晶体及其生长方法和应用 Ytterbium-doped bismuth four tungsten molybdenum sodium / potassium laser crystal growth method and its application |
| 02/15/2012 | CN101381887B 单晶硼纳米锥、其制备方法以及在电学和场发射器件中的应用 Nanotaper crystal boron, their preparation and use in electrical and field emission devices |
| 02/15/2012 | CN101296787B 脆性材料基板的划线形成方法及划线形成装置 Means forming a brittle material substrate scribing method for forming a scribe line, and |
| 02/14/2012 | CA2540245C Method of producing self-supporting substrates comprising iii-nitrides by means of heteroepitaxy on a sacrificial layer |
| 02/09/2012 | WO2012017723A1 Group iii nitride crystal growing method |
| 02/09/2012 | WO2012016977A2 A diamond optical element |
| 02/09/2012 | WO2011151416A3 Diamond tools |
| 02/08/2012 | EP2415912A1 High-purity tellurium dioxide single crystal and manufacturing method thereof |
| 02/08/2012 | EP2415911A1 Device for producing single crystal of silicon carbide |
| 02/08/2012 | EP2415910A1 Silicon single crystal production method |
| 02/08/2012 | EP2415909A1 Supporting substrate, bonding substrate, method for manufacturing supporting substrate, and method for manufacturing bonding substrate |
| 02/08/2012 | EP2414566A1 Pot for silicon suitable for producing semiconductors |
| 02/08/2012 | EP2414277A1 Nanostructured metals |
| 02/08/2012 | EP2132013B1 Method for the manufacture of thin metal nanowires by biotemplating |
| 02/08/2012 | EP2071061B1 Seed crystal fixing device |
| 02/08/2012 | CN202139325U 单晶炉电气控制系统 Crystal furnace electrical control system |
| 02/08/2012 | CN202139324U 一种上排气热场式直拉硅单晶炉石墨热场系统 One kind of exhaust thermal field type Czochralski silicon single crystal graphite furnace Thermal Systems |
| 02/08/2012 | CN202139323U 多晶硅铸锭炉热场 Polycrystalline silicon ingot furnace thermal field |
| 02/08/2012 | CN102345170A Nitride crystal and method for producing the same |
| 02/08/2012 | CN102345169A Array type diamond film and method for making the same |
| 02/08/2012 | CN102345168A Method for preparing regular grapheme single crystal domains |
| 02/08/2012 | CN102345167A Preparation method of non-close packed inverse opal photonic crystal |
| 02/08/2012 | CN102345166A Method for reducing warp of polycrystalline silicon wafer |
| 02/08/2012 | CN102345165A Device for reducing warping degree of polycrystalline silicon slice |
| 02/08/2012 | CN102345164A Efficient preparation method of silicon cores and silicon core preparation furnace |
| 02/08/2012 | CN102345163A Method for preparing single-phase polycrystalline bismuth molybdate by using solid-phase reaction method and application |
| 02/08/2012 | CN102345161A Crystal growth furnace heater and sapphire crystal growth furnace |
| 02/08/2012 | CN102345154A Method and device for improving oxygen content in monocrystalline silicon crystal bar |
| 02/08/2012 | CN102344165A Ii-iii-v compound semiconductor |
| 02/08/2012 | CN102344164A Ii-iii-n semiconductor nanoparticles and method of making same |
| 02/08/2012 | CN101939820B 外延生长用基板、GaN类半导体膜的制造方法、GaN类半导体膜、GaN类半导体发光元件的制造方法以及GaN类半导体发光元件 The method of manufacturing an epitaxial growth substrate, a method of manufacturing GaN-based semiconductor film, GaN-based semiconductor film, GaN-based semiconductor light-emitting element and the GaN-based semiconductor light-emitting element |
| 02/08/2012 | CN101901760B 基于c面SiC衬底上极性c面GaN的MOCVD生长方法 MOCVD growth method on polar c-plane SiC substrate c-plane GaN-based |
| 02/08/2012 | CN101901757B 基于a面6H-SiC衬底上非极性a面GaN的MOCVD生长方法 Based on a surface of the 6H-SiC substrate MOCVD growth method nonpolar a-plane GaN on |
| 02/08/2012 | CN101892519B 一炉次中多次拉制多根硅芯的硅芯炉 One heats repeatedly drawn plurality of silicon core silicon core furnace |
| 02/08/2012 | CN101570885B 一次可同时拉制十三根硅芯或其它晶体材料的高频线圈 One can simultaneously drawn thirteen crystal silicon or other material core frequency coil |
| 02/08/2012 | CN101498049B 一种非水解溶胶-凝胶工艺制备莫来石晶须的方法 A non-hydrolytic sol - mullite whiskers prepared gel process |
| 02/08/2012 | CN101187060B 针状、片状纳米单晶体镁铝水滑石Mg<sub>6</sub>Al<sub>2</sub>(OH)<sub>16</sub>CO<sub>3</sub>·4H<sub>2</sub>O的制备方法 Needles, flakes nanometer single crystal hydrotalcite Mg <sub> 6 </ sub> Al <sub> 2 </ sub> (OH) <sub> 16 </ sub> CO <sub> 3 </ sub> · 4H <sub> 2 </ sub> O preparation |
| 02/07/2012 | US8110041 Coloured diamond |
| 02/02/2012 | WO2012015594A1 Mold shape to optimize thickness uniformity of silicon film |
| 02/02/2012 | WO2012014796A1 Garnet single crystal, optical isolator and laser processing machine |
| 02/02/2012 | WO2012014278A1 Poling treatment method, plasma poling device, piezoelectric substance, and manufacturing method therefor |
| 02/02/2012 | WO2011151415A3 Diamond tools |
| 02/02/2012 | WO2011151414A3 Diamond tools |
| 02/02/2012 | US20120028451 Shaped nanocrystal particles and methods for making the same |
| 02/02/2012 | US20120025155 Preparation of Nanoparticle Materials |
| 02/02/2012 | DE102011079855A1 Siliciumcarbideinkristall und Verfahren zu dessen Herstellung Siliciumcarbideinkristall and process for its preparation |
| 02/02/2012 | DE102005046726B4 Nichtpolierte monokristalline Siliziumscheibe und Verfahren zu ihrer Herstellung Not polished monocrystalline silicon wafer and processes for their preparation |
| 02/02/2012 | CA2805838A1 Garnet-type single crystal, optical isolator and laser processing machine |
| 02/01/2012 | EP2413122A1 High-temperature capacitive static/dynamic pressure sensors and methods of making the same |
| 02/01/2012 | EP2412849A1 Silicon wafer and method for manufacturing same |
| 02/01/2012 | EP1905873B1 HEAT TREATMENT METHOD FOR ZnTe SINGLE CRYSTAL SUBSTRATE AND ZnTe SINGLE CRYSTAL SUBSTRATE |
| 02/01/2012 | CN202131399U 一种热交换装置 A heat exchange device |
| 02/01/2012 | CN202131395U 一种直拉法生产单晶硅用掺杂装置 Rafa produce a direct-doped monocrystalline silicon devices |
| 02/01/2012 | CN202131394U 直拉硅单晶炉用节能装置 Czochralski silicon single crystal furnace with energy-saving devices |