Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
04/2012
04/17/2012US8157913 Method of forming a sapphire single crystal
04/17/2012CA2455938C Colloidal nanocrystals with high photoluminescence quantum yields and methods of preparing the same
04/12/2012WO2012046755A1 Magneto-optical material, faraday rotator, and optical isolator
04/12/2012WO2012046676A1 Epitaxial wafer, light-receiving element, optical sensor device, and method for manufacturing epitaxial wafer and light-receiving element
04/12/2012WO2012046323A1 Phaser
04/12/2012US20120088649 Manufacturing transparent yttrium aluminum garnet by spark plasma sintering
04/12/2012DE102007021944B4 Freistehendes Nitrid-Halbleitersubstrat und lichtemittierende Vorrichtung Detached nitride semiconductor substrate and light emitting device
04/12/2012CA2813905A1 Magneto-optical material, faraday rotator, and optical isolator
04/11/2012EP2439317A1 Process and apparatus for production of crystals of compound of metal belonging to group-13 on periodic table
04/11/2012EP2439316A1 Nitride semiconductor crystal and method for manufacturing same
04/11/2012EP2439250A1 MULTILAYER ZnO SINGLE CRYSTAL SCINTILLATOR AND METHOD FOR MANUFACTURING SAME
04/11/2012EP2242874B1 Device and method for preparing crystalline bodies by directional solidification
04/11/2012CN202187092U 一种冷却板 A cooling plate
04/11/2012CN202187091U 一种单晶硅棒 One kind of silicon rods
04/11/2012CN202187090U 一种单晶硅棒 One kind of silicon rods
04/11/2012CN202187089U 快速反馈硅液溢流监控装置 Quick feedback silicon liquid overflow monitoring device
04/11/2012CN202187086U 单晶炉的梯度加热器 Gradient crystal furnace heater
04/11/2012CN202187081U 一种单晶炉热场 Single crystal furnace thermal field
04/11/2012CN202187080U 单晶炉的导流套 Puller diversion sets
04/11/2012CN102414351A 氮化物半导体基板的制造方法 The method of manufacturing a nitride semiconductor substrate,
04/11/2012CN102414349A 制造单晶的方法 The method of manufacturing a single crystal
04/11/2012CN102414348A SiC基板的制作方法 Production method of the SiC substrate,
04/11/2012CN102409407A 红外非线性光学材料Ba<sub>3</sub>AGa<sub>5</sub>Se<sub>10</sub>Cl<sub>2</sub>及其制备方法 Infrared nonlinear optical materials Ba <sub> 3 </ sub> AGa <sub> 5 </ sub> Se <sub> 10 </ sub> Cl <sub> 2 </ sub> and its preparation method
04/11/2012CN102409406A 低位错氮化镓的生长方法 Low dislocation GaN growth method
04/11/2012CN102409405A 多晶硅铸锭炉用碳材料的防碳污染涂层及其制备工艺 Polycrystalline silicon ingot furnace carbon pollution prevention coating and preparation process using carbon material
04/11/2012CN102409404A 一种铒激活铝酸钇钙新型中波红外激光晶体 One kind of calcium-doped yttrium aluminum activate new wave infrared laser crystals
04/11/2012CN102409403A 自支撑单晶光子晶体的制备方法 The method for preparing a single crystal self-supporting photonic crystal
04/11/2012CN102409402A 650kg多晶硅铸锭工艺 650kg polycrystalline silicon ingot process
04/11/2012CN102409401A 直拉法生长单晶硅中利用氮-氩混合气体除杂 Czochralski grown silicon single crystal by nitrogen - argon mixed gas impurity
04/11/2012CN102409399A 一种高质量石墨烯的制法 A high quality graphene prepared by
04/11/2012CN102409395A 一种直拉硅单晶的镓元素掺杂装置及其掺杂方法 A direct-pulling silicon single crystal doped with gallium doping apparatus and method
04/11/2012CN102409394A 多晶硅铸锭用坩埚及其制备方法 Polycrystalline silicon ingot crucible and its preparation method
04/11/2012CN102409392A 一种溶剂热法制备SmS 薄膜的方法 A method of preparation Solvothermal SmS films
04/11/2012CN102409391A 一种钇铝石榴石单晶的制备方法 A method for preparing a single crystal of yttrium-aluminum garnet
04/11/2012CN102409177A Method for comprehensively recovering aluminum, silicon and titanium from pyrite tailings
04/11/2012CN102002751B 利用苦卤直接合成碱式硫酸镁晶须的方法 Bittern use direct synthesis method of basic magnesium sulfate whisker
04/11/2012CN101812723B 基于物理气相传输技术生长碳化硅体单晶方法及其装置 Physical vapor transport technique bulk single crystal silicon carbide growth based method and apparatus
04/11/2012CN101597798B 共掺杂改性硼酸钆锂闪烁晶体及其制备方法 Scintillation crystal gadolinium lithium borate modified its preparation method Codoped
04/11/2012CN101597797B 掺镱硼酸钆锂激光晶体及其制备方法 Ytterbium-doped lithium borate laser crystal gadolinium and its preparation method
04/10/2012US8153833 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
04/10/2012CA2634876C Methods of making and washing scorodite
04/05/2012WO2012044914A1 Sheet wafer processing as a function of wafer weight
04/05/2012WO2012044909A1 Sheet wafer defect mitigation
04/05/2012WO2012043885A1 Method for producing substrate for group iii nitride semiconductor element fabrication, method for producing group iii nitride semiconductor free-standing substrate or group iii nitride semiconductor element, and group iii nitride growth substrate
04/05/2012WO2012042961A1 Growth method for gan crystal and gan crystal substrate
04/05/2012WO2012042035A1 Thermalizing gas injectors, material deposition systems, and related methods
04/05/2012WO2012040951A1 Method for reducing stress defects of polycrystal cast ingot
04/05/2012DE102011115149A1 Unterdrückung von kristallwachstumsinstabilitäten während der herstellung von seltenerdoxyorthosilikat-kristallen Suppression of crystal growth instabilities during the preparation of crystals seltenerdoxyorthosilikat
04/05/2012CA2813432A1 Sheet wafer processing as a function of wafer weight
04/05/2012CA2813423A1 Sheet wafer defect mitigation
04/04/2012EP2437286A1 GaN single-crystal substrate
04/04/2012EP2436801A1 Systems and methods for forming semiconductor materials by atomic layer deposition
04/04/2012EP2436658A1 Silica container and method for producing same
04/04/2012EP2435241A1 Aligned porous substrates by directional melting and resolidification
04/04/2012CN202181369U 晶棒生长锅切缝机 Boule grown pot chasers
04/04/2012CN202181367U 单晶炉 Puller
04/04/2012CN202181366U 单晶炉提拉旋转驱动装置 Puller pulling rotary drive means
04/04/2012CN102405310A Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal
04/04/2012CN102403201A Method for manufacturing nitride semiconductor crystal layer
04/04/2012CN102400224A Silicon carbide single crystal and manufacturing method of the same
04/04/2012CN102400223A 一种激光基质晶体材料及其制备方法和应用 A laser host crystal material and preparation method and application
04/04/2012CN102400222A 一种水热法生长大尺寸碘酸钒钠晶体的方法 A water thermal growth of large-size crystals of sodium periodate method of vanadium
04/04/2012CN102400221A 宝石炉 Gem furnace
04/04/2012CN102400220A 自诱导化学气相沉积法制备氧化钛纳米线的方法 Self-induced chemical vapor deposition method Preparation of titanium oxide nanowires
04/04/2012CN102400219A 一种硼-镓共掺准单晶硅及其制备方法 A boron - a total of quasi-gallium-doped single-crystal silicon and its preparation method
04/04/2012CN102400218A System for continuous growing of monocrystalline silicon
04/04/2012CN102400217A 一种新型多孔硅及其制备方法 A novel porous silicon and its preparation method
04/04/2012CN102400216A Method for manufacturing single crystal grain niobium material for radio frequency superconducting cavity
04/04/2012CN102400215A 多晶硅铸锭炉的可变热交换装置及其控制方法 Apparatus and method for controlling a variable heat exchange polycrystalline silicon ingot furnace
04/04/2012CN102400214A 一种用于多晶硅锭制备的复合涂层石英坩埚 A composite coating quartz crucible for polysilicon ingots prepared
04/04/2012CN102400213A 外延生长氧化铝单晶薄膜的方法 Epitaxially growing a single crystal thin film using alumina
04/04/2012CN102400212A 获取多晶体光学硒化锌的方法 A polycrystalline zinc selenide optical acquisition method
04/04/2012CN102400210A Method for adjusting defects in Czochralski silicon single crystal
04/04/2012CN102400209A System for continuous growing of monocrystalline silicon
04/04/2012CN102399085A 高纯а-氧化铝的预熔化结晶方法 Pre-melt crystallization process for high purity alumina а-
04/04/2012CN101405439B Apparatus for producing nitride single crystal
04/04/2012CN101319357B 微波辅助液相还原法制备铜纳米线 Preparation of microwave-assisted liquid-phase reduction of copper nanowires
04/04/2012CN101108783B Organic semicondutor element
04/03/2012US8148178 Method of growing nitride single crystal and method of manufacturing nitride semiconductor light emitting device
04/03/2012US8147991 One hundred millimeter single crystal silicon carbide wafer
03/2012
03/29/2012WO2012039976A1 Technique to modify the microstructure of semiconducting materials
03/29/2012WO2012039257A1 Apparatus for producing single crystals
03/29/2012WO2012037729A1 METHOD FOR MANUFACTURING P-TYPE ZnO-BASED MATERIAL
03/28/2012EP2434034A1 Method for removing metallic catalysor remains from the surface of nanowires
03/28/2012EP2432610A1 Apparatus for the directed solidification of molten metals
03/28/2012CN202175751U 单晶硅取运车 Monocrystalline take transport vehicles
03/28/2012CN202175745U 基于顶侧分开控制多晶硅铸锭炉的加热控制系统 Based on the top side of polycrystalline silicon ingot furnace separately controlled heating control system
03/28/2012CN202175742U 全自动硅单晶生长炉 Automatic silicon single crystal growth furnace
03/28/2012CN202175738U 电磁效率高的提拉法生长蓝宝石晶体的炉体 High efficiency furnace electromagnetic sapphire crystals grown by Czochralski method
03/28/2012CN202175736U 一种采用直径法控制区熔晶体自动生长系统 One kind of method with a diameter of automatic control zone melting crystal growth system
03/28/2012CN202175735U 硅液溢流即时反馈装置 Silicon liquid overflow instant feedback device
03/28/2012CN102396055A Anneal wafer, method for manufacturing anneal wafer, and method for manufacturing device
03/28/2012CN102395716A Apparatus for producing silicon carbide single crystal and method for producing silicon carbide single crystal
03/28/2012CN102395715A Method for producing silicon carbide substrate
03/28/2012CN102395714A Reaction chamber of an epitaxial reactor and reactor that uses said chamber
03/28/2012CN102395535A Silica container and method for producing same
03/28/2012CN102394224A Preparation method of chloro silane-samaric sulfide film on single crystal silicon surface
03/28/2012CN102392306A Microwave hydro-thermal method for preparing SnS film
03/28/2012CN102392305A Preparation method of yttrium aluminum garnet crystal film doped with metal ions
03/28/2012CN102392304A Preparation method of La2CuO4 film
1 ... 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 ... 272