Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
06/2012
06/13/2012CN102492990A Growth method of NaRE(MoO4)2 crystals by flux
06/13/2012CN102492989A Piezoeletric single crystal and method of production of same, piezoelectric element, and dielectric element
06/13/2012CN102492988A Preparation method of ion implantation monocrystal jewel colour generation
06/13/2012CN102492987A Process for growth of ZnO nano-wire array on flexible substrate by using solution method
06/13/2012CN102492986A Selective area hetero-epitaxial substrate structure, preparation thereof and epitaxial layer growing method
06/13/2012CN102492985A Method for isoepitaxial growth of SrTiO3 film by using MBE
06/13/2012CN102492984A Apparatus and method of MBE isoepitaxial growth SrTiO3 film
06/13/2012CN102492981A Antioxidative bubble generation furnace and preparation method thereof
06/13/2012CN102492980A Method and device for preparing silicon cores for polycrystalline silicon deposition
06/13/2012CN102492979A Method for converting visually yellow cerium doped lutetium yttrium oxyorthosilicate crystals into colorless cerium doped lutetium yttrium oxyorthosilicate crystals in neutral atmosphere
06/13/2012CN102492938A Single-contact rotation-revolution base boat
06/13/2012CN102492882A Capture and conversion rule for simulation of solidified microstructure of magnesium alloy
06/13/2012CN102492300A Preparation method of monodispersing fibroin particles and preparation method of photonic crystal
06/13/2012CN102162125B Thermal field structure of polysilicon ingot casting furnace
06/13/2012CN102134744B Heat insulation device of polycrystalline silicon ingot furnace
06/13/2012CN102108547B Multi-substrate large-size hydride vapor phase epitaxy method and device
06/13/2012CN101871126B Gadolinium gallate crystal and growth method thereof
06/13/2012CN101870471B High-efficiency large polycrystalline silicon reducing furnace
06/13/2012CN101812722B Synthesis method of MgOHCl single-crystalline nanorod
06/13/2012CN101798707B BaMgBO3F non-linear optical crystal, preparation method and applications thereof
06/13/2012CN101775653B Method for hydrothermal growth of hydrated di-strontium-11-borate single crystal
06/13/2012CN101581542B Insulated electrode for stating polysilicon reducing furnace at high voltage
06/13/2012CN101506959B Method for producing zinc oxide semiconductor crystal
06/13/2012CN101499415B Method for producing group III nitride-based compound semiconductor, wafer, and group III nitride-based compound semiconductor device
06/13/2012CN101466878B III-th family nitride single crystal and growth method thereof
06/13/2012CN101319376B Rare earth doping nano SrAl2O4 material and method for producing the same
06/12/2012USRE43469 Single crystals and methods for fabricating same
06/12/2012US8198177 AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing same
06/12/2012US8197594 Silicon wafer for semiconductor and manufacturing method thereof
06/12/2012CA2512731C High-speed diamond growth using a microwave plasma in pulsed mode
06/07/2012WO2012074934A1 Feedstock melting and casting system and process
06/07/2012WO2012074031A1 Group iii nitride semiconductor substrate and method for producing the same, and semiconductor light-emitting device and method for producing the same
06/07/2012WO2012073671A1 Bismuth-substituted rare earth iron garnet crystal film and optical isolator
06/07/2012WO2012073670A1 Bismuth-substituted rare earth iron garnet crystal film and optical isolator
06/07/2012WO2012073428A1 Ingot cutting method
06/07/2012WO2012073205A1 Method for preparing a coarse-grain crystallised silicon layer
06/07/2012WO2012072633A1 Heat exchanger for a system for solidifying and/or crystallizing a semiconductor
06/06/2012EP2460914A1 Group iii nitride crystal and production method thereof
06/06/2012EP2460911A1 Silica glass crucible for pulling of silicon single crystal
06/06/2012EP2295137B1 Process for producing colloidal crystal
06/06/2012EP2196565B1 Method for producing sic epitaxial substrate
06/06/2012DE112009000196B4 Verfahren zum Wachsen eines P-SiC-Halbleitereinkristalls und P-SiC-Halbleitereinkristall A process for growing a p-type SiC semiconductor single crystal and P-type SiC semiconductor single crystal
06/06/2012CN202265626U 燃气加热定向凝固炉 Directional solidification furnace gas heating
06/06/2012CN202265624U 一种控制cfz硅单晶挥发物沉积的炉腔辅助装置 An auxiliary device cfz furnace chamber volatiles deposited silicon single control
06/06/2012CN202265623U 一种用多晶铸锭炉铸造类单晶硅用的坩埚 A crucible polycrystalline ingot casting furnaces used in class Monocrystalline
06/06/2012CN102485976A Method and device for near stoichiometric lithium niobate single crystal growth
06/06/2012CN102485975A Growth method of terbium gallium garnet crystal
06/06/2012CN102485974A Method for direct growth of monocrystalline silicon through CVD (chemical vapor deposition) reaction
06/06/2012CN102485970A Method for preparing solar-grade polycrystalline silicon ingots through directional solidification
06/06/2012CN102485960A Dendritic zinc oxide hierarchical-structure nano-grade material, and electrochemical preparation method thereof
06/06/2012CN102154659B Preparation method of silicon nanowire by electrorefining industrial silicon by fused salt
06/06/2012CN102021650B Production method of large polycrystalline ingot
06/06/2012CN102011195B Preparation method of directional solidification high-Nb TiAl alloy single crystal
06/06/2012CN101994154B Preparation method of waist drum shaped single crystal anatase titanium dioxide and gathered microsphere thereof
06/06/2012CN101824650B Purifying system of high purity polysilicon and purifying method
06/06/2012CN101701358B Method for preparing high-quality large silicon carbide single crystal and silicon carbide single crystal prepared by same
06/06/2012CN101624723B Mode and device for forming crystal
06/06/2012CN101603203B Lithium metaborate octo-hydrate nonlinear optical crystal, preparation method thereof and application thereof
06/06/2012CN101410950B Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
06/05/2012US8192713 Method of incorporating a mark in CVD diamond
06/05/2012CA2521498C Nanowhiskers with pn junctions and methods of fabricating thereof
05/2012
05/31/2012WO2012071531A1 Germanium enriched silicon for solar cells
05/31/2012WO2012070528A1 Single crystal pulling device and low heat conductive member to be used in single crystal pulling device
05/31/2012WO2012069530A1 Methods for forming group iii-nitride materials and structures formed by such methods
05/31/2012WO2012069520A1 Methods of forming bulk iii-nitride materials on metal-nitride growth template layers, and structures formed by such methods
05/31/2012WO2012068717A1 Method for manufacturing solar-grade silicon
05/31/2012US20120135549 Method of Processing Gallium-Nitride Semiconductor Substrates
05/31/2012DE112009000328B4 Verfahren zum Aufwachsen eines Siliziumcarbideinkristalls A method for growing a silicon carbide single crystal
05/31/2012DE112006000771B4 Si-dotierter GaAs-Einkristallingot und Verfahren zur Herstellung desselbigen, und Si-dotierter GaAs-Einkristallwafer, der aus Si-dotiertem GaAs-Einkristallingot hergestellt wird Si-doped GaAs single crystal ingot and process for producing desselbigen, and Si-doped GaAs single crystal wafer, which is made of Si-doped GaAs single crystal ingot
05/31/2012DE102011118229A1 Producing fluorite crystal, comprises performing melting-solidification step by melting mixture of calcium fluoride powder having scavenger, and solidifying melted mixture by cooling to obtain melt-solidified body A
05/30/2012EP2458041A2 Crystal comprising a semiconductor material
05/30/2012EP2458039A1 Method of producing sic single crystal
05/30/2012EP2456909A1 Apparatus for producing multicrystalline silicon ingots by induction method
05/30/2012CN202247017U Raw material rod for manufacturing crystal block
05/30/2012CN202247016U Anisotropic crystal roller with precise positioning in special direction
05/30/2012CN202247015U Square crystal rod
05/30/2012CN202247014U Circular truncated cone-shaped heat shield for sapphire single crystal furnace
05/30/2012CN202247013U Split laminating type cylindrical solid thermal shield for sapphire single crystal furnace
05/30/2012CN202247012U Sapphire crystal growth device
05/30/2012CN202247011U Crystal growth composite crucible
05/30/2012CN202247010U Automatic pressure relief explosion-proof device for vacuum pipeline
05/30/2012CN202247009U Vacuum sealing device
05/30/2012CN202247008U Solar monocrystalline silicon rod
05/30/2012CN202247007U Solar polycrystalline silicon rod
05/30/2012CN202247006U Solar monocrystalline silicon piece
05/30/2012CN202247005U Temperature measuring device for polysilicon ingot casting furnace
05/30/2012CN202247004U Heat exchange platform with improved structure for polycrystalline silicon ingot furnace
05/30/2012CN202247003U Water-cooling electrode for sapphire crystal growth furnace using Kyropoulos method
05/30/2012CN202247000U Auxiliary crystal growing apparatus with double weighing instruments
05/30/2012CN202246996U Preinstalled material crucible for production of single crystal
05/30/2012CN202246992U Single crystal furnace and magnetic fluid sealing device thereof
05/30/2012CN202246991U Device for growing solar grade silicon single crystal with low cost
05/30/2012CN202246990U Guide cylinder and seeding device for suspending and producing monocrystalline silicon rod
05/30/2012CN202246989U Single crystal furnace capable of being quickly reloaded
05/30/2012CN202246974U Polysilicon thermal field with local cooling device
05/30/2012CN1837419B Ytterbium doped Y0.8LaCa4O(BO3)3 laser crystal, its preparation method and use
05/30/2012CN102484181A Group-III nitride crystal substrate, group-III nitride crystal substrate with epitaxial layer, semiconductor device, and method for manufacturing same
05/30/2012CN102484044A Process for production of silicon carbide substrate, process for production of semiconductor device, silicon carbide substrate, and semiconductor device
05/30/2012CN102482797A 半导体基板、半导体基板的制造方法、半导体生长用基板、半导体生长用基板的制造方法、半导体元件、发光元件、显示面板、电子元件、太阳能电池元件及电子设备 The method of manufacturing a semiconductor substrate, a semiconductor substrate, the semiconductor growth substrate for growth, a method of manufacturing a semiconductor substrate, a semiconductor element, a light emitting element, a display panel, electronic components, solar cell element and an electronic device
05/30/2012CN102482796A 掺杂的透明导电氧化物 A transparent conductive oxide doped
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