Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
05/2012
05/30/2012CN102482137A 二氧化硅粉、二氧化硅容器及该粉或容器的制造方法 Silica powder, silica powder, containers and manufacturing method of the container, or
05/30/2012CN102479717A 硅锗外延层的形成方法 The method for forming a silicon-germanium epitaxial layer
05/30/2012CN102477584A Method for reducing wear of diamond cutter
05/30/2012CN102477582A (In, Mn) As nano-wires and preparation method thereof
05/30/2012CN102477581A 多晶硅铸锭炉的坩埚平台 Polycrystalline silicon ingot furnace crucible platform
05/30/2012CN102477580A 用于氧正硅酸盐材料制造的晶体生长气氛 Crystalline silicate material used in the manufacture of oxygen positive growth atmosphere
05/30/2012CN102477579A 获取ZnSe/ZnS光学基元的方法 Get ZnSe / ZnS optics primitive methods
05/30/2012CN102127803B Growth method of rectangular specially-shaped sapphire crystal
05/30/2012CN102031563B High-temperature-phase tellurium barium molybdate crystal as well as preparation method and applications thereof
05/30/2012CN102021647B Method for rapid growth of centimeter magnitude ruby crystal
05/30/2012CN101949061B Rare earth-doped lutetium-scandium borate scintillation single crystals and growth method thereof
05/30/2012CN101935879B Ytterbium/bismuth dual-doped lead tungstate crystal and preparation method thereof
05/30/2012CN101892514B Process for growing sodium nitrate monocrystal by Bridgman method
05/30/2012CN101875494B Preparation method of low-titanium and high-purity polycrystalline silicon
05/30/2012CN101824652B Preparation method of alnico magnet
05/30/2012CN101824646B Vacuum closed-type Bridgman-Stockbarge method for growing thallium doped sodium iodide monocrystal
05/30/2012CN101805927B Grower of high-purity semi-insulating silicon carbide single crystal
05/30/2012CN101792929B Group iii nitride crystal substrate and semiconductor device
05/30/2012CN101775652B Preparation and application of K3Al2(PO4)3 non-linear optical crystal
05/30/2012CN101759184B System for making polysilicon with assistance of hydrogen plasmas and method therefor
05/30/2012CN101736403B Method for preparing calcium sulfate crystal whiskers by using impurity-containing gypsum as raw material
05/30/2012CN101724908B Controllable and mass production method of perovskite type manganese and oxygen compound polycrystal nano-rod function material
05/30/2012CN101705519B Barium strontium titanate ferroelectric nano single crystal particle and preparation method thereof
05/30/2012CN101660209B Method and device for reducing polysilicon cast ingot stress
05/30/2012CN101652505B Polycrystalline thin film and method for producing the same and oxide superconductor
05/30/2012CN101649489B Raw material synthesis method for growing yttrium vanadate crystal through pulling method
05/30/2012CN101633628B Method for controllably preparing multi-shape copper-tetracyano-p-benzoquinone dimethane nano structure
05/30/2012CN101603205B Carbon-doped yttrium aluminium garnet crystal and two-step preparation method thereof
05/30/2012CN101418469B Group iii nitride semiconductor manufacturing system
05/30/2012CN101405440B Process for producing nitride single-crystal and apparatus therefor
05/30/2012CN101348939B Growth method improving gallium arsenide single crystal utilization ratio
05/30/2012CN101319367B Method for preparing solar energy level polysilicon with high temperature vacuum preprocessing
05/30/2012CN101319359B 单晶金刚石 Single crystal diamond
05/30/2012CN101311353B Second order nonlinear optical crystal material, preparation method and use thereof
05/30/2012CN101194052B Low basal plane dislocation bulk grown SiC wafers
05/30/2012CN101151402B Seventy five millimeter silicon carbide wafer with low warp, bow, and TTV
05/29/2012US8188458 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
05/29/2012US8187507 GaN crystal producing method, GaN crystal, GaN crystal substrate, semiconductor device and GaN crystal producing apparatus
05/29/2012US8187380 Method of growing single crystal diamond in a plasma reactor
05/24/2012WO2012067372A2 Sapphire ingot grower
05/24/2012WO2012067112A1 Method for producing epitaxial silicon carbide single crystal substrate
05/24/2012WO2012067105A1 Silicon carbide substrate, and method for producing semi-conductor element and silicon carbide substrate
05/24/2012WO2012067079A1 Silicon carbide substrate and semiconductor element
05/24/2012WO2012067067A1 Method for manufacturing superconducting material
05/24/2012WO2012067011A1 Silicon carbide powder for production of silicon carbide single crystal, and method for producing same
05/24/2012WO2012065271A1 Apparatus and method for directional solidification of silicon
05/24/2012WO2012031148A3 High throughput sapphire core production
05/24/2012DE112009003583T5 Einkristallherstellungsverfahren und Einkristallherstellungsvorrichtung Einkristallherstellungsverfahren and Einkristallherstellungsvorrichtung
05/24/2012DE102010044017A1 Herstellung von strahlungsbeständigen Fluorid-Kristallen, insbesondere von Kalziumfluorid-Kristallen Preparation of radiation-resistant fluoride crystals, in particular crystals of calcium fluoride
05/23/2012EP2455515A1 Process for producing sic single crystal
05/23/2012EP2455397A1 Mutant ras polypeptide crystal
05/23/2012EP2454399A1 A method and apparatus for treating diamond using liquid metal saturated with carbon
05/23/2012EP2454398A2 Coated crucibles and methods for preparing and use thereof
05/23/2012EP1039990B1 Fluorine-doped diamond-like coatings
05/23/2012CN202226965U Sapphire crystal growing furnace
05/23/2012CN202226964U Crucible moving device for growing crystal
05/23/2012CN202226963U Polysilicon ingot casting furnace
05/23/2012CN202226962U Polysilicon ingot casting furnace linking system capable of realizing cyclic utilization of argon
05/23/2012CN202226961U Sapphire single crystal growth furnace
05/23/2012CN202226960U Heating device for single crystal silicon thermal field
05/23/2012CN202226959U Crucible structure for crystal growth
05/23/2012CN202226957U Guide flow cylinder for monocrystalline silicon bar production
05/23/2012CN202226950U Inner thermal insulation member lifting device for single crystal silicon ingot furnace
05/23/2012CN202226949U Graphite heater of polysilicon ingot furnace
05/23/2012CN202226669U Tail gas cooling system for polycrystalline silicon hydrogenation furnace
05/23/2012CN102473605A 制造碳化硅单晶的方法和碳化硅衬底 The method of producing a silicon carbide single crystal and the silicon carbide substrate
05/23/2012CN102473594A 制造碳化硅衬底的方法和碳化硅衬底 The method of producing a silicon carbide substrate and the silicon carbide substrate
05/23/2012CN102471932A Method for preserving a gallium nitride substrate, preserved gallium nitride substrate, semiconductor device, and manufacturing method therefor
05/23/2012CN102471931A Iii nitride semiconductor substrate, epitaxial substrate, and semiconductor device
05/23/2012CN102471930A Method for producing silicon carbide crystal, silicon carbide crystal, and device for producing silicon carbide crystal
05/23/2012CN102471929A 碳化硅衬底 SiC substrates
05/23/2012CN102471928A 制造碳化硅衬底的方法 The method of producing a silicon carbide substrate
05/23/2012CN102471927A SiC单晶的制造方法 The method of producing single crystal SiC
05/23/2012CN102471926A 复合坩埚及其制造方法以及硅晶体的制造方法 Composite crucible and its manufacturing method and a manufacturing method of the silicon crystal
05/23/2012CN102471925A 硅氧化物除去装置及单晶硅制造装置的惰性气体回收设备 Silicon oxide single crystal silicon manufacturing plant and inert gas elimination device recycling equipment
05/23/2012CN102471924A 通过感应方法生产多晶硅锭的装置 Polycrystalline silicon ingot production plant by induction method
05/23/2012CN102471923A 用于制备鲜艳浅蓝色或鲜艳浅蓝色/绿色的单晶cvd金刚石的方法及其获得的产品 Methods for the preparation of bright blue or bright blue / green crystal cvd diamond and its products obtained
05/23/2012CN102471922A 单晶硅提拉用氧化硅玻璃坩埚 Pulling the single crystal silicon with a silicon oxide glass crucible
05/23/2012CN102471921A 用于制造半导体晶体的方法和装置以及半导体晶体 Method and apparatus for manufacturing a semiconductor crystal and a semiconductor crystal
05/23/2012CN102471920A Iii族金属氮化物单晶的制造方法 Iii metal nitride single-crystal manufacturing method
05/23/2012CN102471126A Production device for silica glass crucible and production method for silica glass crucible
05/23/2012CN102471125A 二氧化硅容器及其制造方法 Silica container and its manufacturing method
05/23/2012CN102468142A 一种外延片的形成方法及外延片 An epitaxial sheet forming method and epitaxial wafers
05/23/2012CN102465344A GaAs晶片及GaAs晶片的制造方法 GaAs wafer manufacturing method and GaAs wafers
05/23/2012CN102465343A Method of manufacturing gan-based film
05/23/2012CN102465342A Method of manufacturing gan-based film
05/23/2012CN102465341A 微米级花状复合金属氧化物的制备方法 Preparation micron flower-like composite metal oxide
05/23/2012CN102465340A Self-frequency-doubling laser neodymium-doped BaCaBO3F crystal
05/23/2012CN102465339A Superconductive material and laser apparatus based on golden rule features of phonon, valence bond theory and phonon transferring at Fermi surface
05/23/2012CN102465337A 一种多片多源卧式氢化物气相外延生长系统 A multi-chip multi-source horizontal hydride vapor phase epitaxy system
05/23/2012CN102465336A 一种高锗浓度的锗硅外延方法 Of a high concentration of germanium silicon germanium epitaxy
05/23/2012CN102465335A 一种用于半导体材料热壁外延生长系统的加热装置 A heating device hot wall epitaxial growth of semiconductor material systems for
05/23/2012CN102465334A 一种氮化镓基led外延层的生长方法 A gallium nitride-based epitaxial layers grown led
05/23/2012CN102465333A 一种立式氢化物气相外延生长系统 To provide a vertical hydride vapor phase epitaxy system
05/23/2012CN102465332A 一种熔盐提拉法生长ktp优质单晶的方法 A high-quality single crystal growth ktp molten salt Czochralski method
05/23/2012CN102465331A 抗辐射性的氟化物晶体的生产工艺 Production processes radiation resistance of fluoride crystal
05/23/2012CN102463352A 一种合成双金属Pd-Au核-壳六面体的方法 A synthetic bimetallic Pd-Au core - shell hexahedral methods
05/23/2012CN101994153B Method for preparing modified calcium sulfate whisker by using desulfurization gypsum
05/23/2012CN101962808B High-efficiency and energy-saving potassium titanate whisker preparation method
05/23/2012CN101962801B Method for rapidly growing Nb205 crystal
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