Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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07/04/2012 | CN102534795A Apparatus and method for manufacturing silicon carbide single crystal |
07/04/2012 | CN102534794A Preparation method for perovskite lead titanate single-crystal nanometer sheet |
07/04/2012 | CN102534793A Nonlinear optical material ZnTeMoO6, and growth method for ZnTeMoO6 crystal |
07/04/2012 | CN102534792A Tunable laser crystal chrome-mixing magnesium molybdate and preparation method thereof |
07/04/2012 | CN102534791A Vanadate composite crystal with laser active ion doping concentration gradient and preparation method thereof |
07/04/2012 | CN102534790A Garnet composite crystal with multi-segment doping concentration gradient and growing method thereof |
07/04/2012 | CN102534789A Novel medium wave infrared laser crystal of chromium praseodymium codoping erbium activated yttrium aluminate |
07/04/2012 | CN102534788A Ferroelectric single crystal containing Pb(Ga1/2Nb1/2)O3, Pb(Mg1/3Nb2/3)O3 and PbTiO3, as well as preparation method and application of ferroelectric single crystal |
07/04/2012 | CN102534787A Preparation method of single domain yttrium barium copper oxide superconductor |
07/04/2012 | CN102534786A Non-linear optical crystal iodic acid vanadium potassium |
07/04/2012 | CN102534785A Novel medium wave infrared laser crystal of erbium activated aluminic acid lanthanum calcium |
07/04/2012 | CN102534784A Nonlinear optical crystal Rb4Ge3B6O17 |
07/04/2012 | CN102534783A Inner layer heat insulation screen for single crystal furnace |
07/04/2012 | CN102534782A Device for observing and sorting sapphire crystal bubbles |
07/04/2012 | CN102534781A Ti-doped titanium dioxide nanowire array, as well as preparing method and application of Ti-doped titanium dioxide nanowire array |
07/04/2012 | CN102534780A Multiple epitaxial growth method for realizing big length-to-diameter ratio ZnO nanowire array film based on low-temperature hydrothermal method |
07/04/2012 | CN102534779A Preparation method of single component oxide crystal |
07/04/2012 | CN102534778A Omnibearing growing method for KDP (Potassium Dihydrogen Phosphate) crystals |
07/04/2012 | CN102534777A Neodymium-doped potassium gadolinium phosphate laser crystal, and preparation method and application thereof |
07/04/2012 | CN102534776A Neodymium ion doped fluoride laser crystal |
07/04/2012 | CN102534775A Method for growing cerium-doped lanthanum bromide scintillation crystal by using out-of-phase seed crystal |
07/04/2012 | CN102534774A Growing method of magnesium fluoride barium single crystal |
07/04/2012 | CN102534773A Production method of high-reinforcement modified anhydrous calcium sulfate crystal whiskers |
07/04/2012 | CN102534772A Method for growing large-grain cast polycrystalline silicon |
07/04/2012 | CN102534771A Method for growing gallium phosphide single crystals |
07/04/2012 | CN102534770A Apparatus for manufacturing silicon carbide single crystal |
07/04/2012 | CN102534769A Method for growing gallium nitride epitaxial structure on patterned substrate |
07/04/2012 | CN102534768A Method for preparing silicon-based gallium arsenide material |
07/04/2012 | CN102534767A Na-mixing method for growing p-type ZnO single crystal film |
07/04/2012 | CN102534766A Device for quickly and continuously preparing large-size graphene film and application thereof |
07/04/2012 | CN102534765A Control synthesis method for three-dimensional flower-shaped ZnO/ZnS composite structure |
07/04/2012 | CN102534764A Method for epitaxially growing type-II superlattice narrow-spectrum infrared photoelectric detector material |
07/04/2012 | CN102534763A Graphite crucible for growing large-size silicon carbide single crystal by physical vapor deposition method and application thereof |
07/04/2012 | CN102534762A Seed crystal bonding method for growing SiC crystals |
07/04/2012 | CN102534758A Growth method and growth device for bar-shaped sapphire crystals |
07/04/2012 | CN102534753A Czochralski zone melting gas doping method for effectively improving radial resistivity uniformity of zone-melted silicon single crystal |
07/04/2012 | CN102534752A Czochralski zone melting gas doping method for preparing zone-melted silicon single crystal |
07/04/2012 | CN102534751A Casting zone melting gas doping method for preparing zone-melted silicon single crystal |
07/04/2012 | CN102534750A Traveling wave magnetic field method for improving resistivity uniformity of zone-melted silicon single crystal |
07/04/2012 | CN102534749A Method for preparing 6-inch N type solar silicon single crystals by Czochralski and float zone methods |
07/04/2012 | CN102534748A Device and method for preparing casting monocrystalline silicon |
07/04/2012 | CN102534745A Preparation method for nanometer tube of anti-chrysotile structure |
07/04/2012 | CN102534590A Method for preparing crystal titanium dioxide nanorod array film |
07/04/2012 | CN102534544A Nanometer carbon pipe composite material and manufacturing method thereof |
07/04/2012 | CN102531349A Method of manufacturing vitreous silica crucible |
07/04/2012 | CN102527594A Quartz crucible for ingot casting and manufacturing method thereof |
07/04/2012 | CN102527318A Tin bisulfide single-crystal nanosheets selectively absorbing organic dyes, and preparation method thereof |
07/04/2012 | CN102525050A Moissanite gem with bright carving surface and cutting and grinding processing methods thereof |
07/04/2012 | CN102206856B Method for growing zinc oxide material by modulating temperature periodically |
07/04/2012 | CN102191541B Dual-temperature-zone synthesis method and apparatus for phosphorus-silicon-cadmium polycrystal material |
07/04/2012 | CN102174713B Group iii-v nitride-based semiconductor substrate, its manufacturing method, and group iii-v nitride-based semiconductor |
07/04/2012 | CN102168313B Gas phase annealing modification method for tellurium/zinc/cadmium crystal |
07/04/2012 | CN102094233B Device for preparing polycrystalline silicon ingots with directional solidification microstructures |
07/04/2012 | CN102071458B Preparation method and application of large-size octahydrate calcium ammonium borate nonlinear optical crystal |
07/04/2012 | CN102021655B Synthetic quartz wafer electric cleaning method |
07/04/2012 | CN102021645B Method for preparing polycrystalline silicon ingot with directional solidification microstructure |
07/04/2012 | CN102011188B Method for growing RFeO3 photomagnetic function crystal by secondary melting method |
07/04/2012 | CN102002754B Method for growing bismuth silicate (BSO) scintillation crystal by shaping and lifting |
07/04/2012 | CN101985744B Method for preparing monocrystalline cubic carbon nitride thin film |
07/04/2012 | CN101984151B Di lithium tetra borate rubidium nonlinear optic crystal, preparation method and application thereof |
07/04/2012 | CN101980066B Polarization microscope device for polymer crystallization process under observable ultrasonic condition |
07/04/2012 | CN101979723B Method for preparing p-type CdS nanowires |
07/04/2012 | CN101974783B Compound cesium lithium borate (CLBO) nonlinear optical crystal, preparation method and application thereof |
07/04/2012 | CN101962811B Monocrystalline silicon piece texturizing liquid and texturizing method thereof |
07/04/2012 | CN101956222B Preparation method of titanium dioxide nanotube array sensitized by cadmium sulfide nanoparticles |
07/04/2012 | CN101949062B Non-linear optical crystal of compound boron rubidium dimalate monohydrate as well as preparation method and application thereof |
07/04/2012 | CN101942700B Method for preparing circular cylindrical colloidal crystals based on optical fibers and crystals thereof |
07/04/2012 | CN101942698B Preparation method for alpha-aluminium oxide monocrystal |
07/04/2012 | CN101928986B Process for preparing magnesium borate whiskers with high aspect ratio by utilizing carnallite |
07/04/2012 | CN101928971B Method for preparing Te nanorod array by non-template electrochemical deposition |
07/04/2012 | CN101914803B Crystal forming devices and systems and methods for making and using the same |
07/04/2012 | CN101814428B Method for producing epitaxially coated silicon wafers |
07/04/2012 | CN101787559B Heater coil device for preparing high resistance zone-melting monocrystalline silicon in vacuum condition |
07/04/2012 | CN101768783B Brucite based method for preparing basic magneislum |
07/04/2012 | CN101724898B Method for preparing solar grade polycrystalline silicon material |
07/04/2012 | CN101660202B Method for preparing ceramic-based three-dimensional photonic crystals with photo-curing direct molding |
07/04/2012 | CN101660199B Apparatus for the production of silica crucible |
07/04/2012 | CN101638806B Method for manufacturing silicon wafer |
07/04/2012 | CN101605930B N-type conductive aluminum nitride semiconductor crystal and method for producing the same |
07/04/2012 | CN101603202B Method for processing seed crystal capable of showing characteristic structure and shape of quartz crystal |
07/04/2012 | CN101570651B Corrosion-resistance coating of polysilicon ingot furnace, high temperature resistance protective layer and preparation method thereof |
07/04/2012 | CN101517759B Method for manufacturing group iii nitride compound semiconductor light-emitting device, group iii nitride compound semiconductor light-emitting device, and lamp |
07/04/2012 | CN101508590B Crucible pot coating for polysilicon casting ingot and preparation method |
07/04/2012 | CN101459215B Method for manufacturing gallium nitride single crystalline substrate using self-split |
07/04/2012 | CN101319400B Method for Fe doped growing GaFeN dilution magnetic semiconductor and uses thereof |
07/04/2012 | CN101311370B Large-sized bismuth zinc borate nonlinear optical crystal, preparation method and use |
07/04/2012 | CN101155950B Silicon single crystal growing method, silicon wafer and soi substrate using such silicon wafer |
07/04/2012 | CN101054721B Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT |
07/04/2012 | CN101006208B Manufacture of cadmium mercury telluride on patterned silicon |
07/03/2012 | US8212364 Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance |
07/03/2012 | US8212259 III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates |
06/28/2012 | WO2012086856A1 Single-crystal sapphire ingot growing device |
06/28/2012 | WO2012086819A1 Bi-substituted rare earth iron garnet single crystal, method for producing same, and optical device |
06/28/2012 | WO2012086240A1 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon |
06/28/2012 | WO2012086239A1 Feed material for epitaxial growth of monocrystalline silicon carbide, and method for epitaxial growth of monocrystalline silicon carbide |
06/28/2012 | WO2012086238A1 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide |
06/28/2012 | WO2012086237A1 Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide |
06/28/2012 | WO2012086212A1 METHOD AND DEVICE FOR MANUFACTURING SELF-SUPPORTING GALLIUM NITRIDE (GaN) SUBSTRATE |
06/28/2012 | WO2012084750A1 Dislocation engineering in single crystal synthetic diamond material |
06/28/2012 | WO2012084661A1 A microwave plasma reactor for manufacturing synthetic diamond material |