Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
06/2012
06/28/2012WO2012084656A1 Controlling doping of synthetic diamond material
06/28/2012WO2012083442A1 Radioactive and/or magnetic metal nanoparticles and process and apparatus for synthesizing same
06/28/2012CA2821621A1 Controlling doping of synthetic diamond material
06/28/2012CA2821618A1 Dislocation engineering in single crystal synthetic diamond material
06/27/2012EP2469581A1 Semiconductor element and production method thereof
06/27/2012EP2468931A1 Method for cleaving a substrate
06/27/2012EP2468930A2 Solid solution inducing layer for weak epitaxy growth of non-planar phthalocyanine
06/27/2012EP2468392A2 Diamond tool, synthetic single crystal diamond and method for synthesizing single crystal diamond, and diamond jewelry
06/27/2012EP2467329A1 Process control for umg-si material purification
06/27/2012EP2467222A1 PREPARATION OF FePt AND CoPt NANOPARTICLES
06/27/2012CN102520749A Power source for Kyropoulos method crystal growth equipment
06/27/2012CN102517640A Method for in situ growth of metal oxide, metal nitride and metal carbide nanowires
06/27/2012CN102517639A Preparation method of ribbon carbon-enwrapped V2O3, VO2 and VC core-shell material
06/27/2012CN102517638A Polypyrrole ordered nanopore array material as well as preparation method and energy storage application thereof
06/27/2012CN102517637A Preparation method for lead titanate nanowire
06/27/2012CN102517636A In-situ grown nano-grade hydroxyapatite whisker powder, porous ceramic, preparation methods thereof, and applications thereof
06/27/2012CN102517635A Lithium potassium phosphorus oxide compound, lithium potassium phosphorus oxide crystal and preparation method of lithium potassium phosphorus oxygen compound and crystal
06/27/2012CN102517634A Air-flow control structure of polysilicon ingot furnace and application method thereof
06/27/2012CN102517633A Scaffold for graphene growing, and method thereof
06/27/2012CN102517632A Method for preparing epitaxial Gd2-xLaxO gate dielectric film by MOCVD (Metal Organic Chemical Vapor Deposition)
06/27/2012CN102517631A Method of manufacturing substrates having improved carrier lifetimes
06/27/2012CN102517630A Single crystals and methods for fabricating same
06/27/2012CN102517626A Optical floating region growth method of Mg4Nb2O9 single crystals
06/27/2012CN102517625A Boric acid strontium lithium micropore crystal and preparation method thereof and application
06/27/2012CN102517551A Preparation method for three-dimensional photonic crystal
06/27/2012CN102517544A Method for producing polycrystal mercuric iodide thick films by vacuum evaporation and vapor phase deposition under action of ultrasonic wave
06/27/2012CN102515769A Multi-element rare-earth boride (CexPr1-x)B6 anode material and preparation method thereof
06/27/2012CN102304761B Preparation method for non-close-packed opal photonic crystal
06/27/2012CN102168305B Synthesis method of phosphorus-silicon-cadmium polycrystal material
06/27/2012CN102168299B Method for growing phosphorus-silicon-cadmium single crystal
06/27/2012CN102140688B Preparation method of Bi2O3 polycrystal
06/27/2012CN102086528B Preparation method for titanium dioxide monocrystalline nano wire array film
06/27/2012CN102061518B Precise control method for growth starting temperature of mercury cadmium telluride liquid phase epitaxy system
06/27/2012CN102051688B Method for preparing giant field induced strain barium titanate single crystal
06/27/2012CN102041553B Preparation method and application of crystalline-state beta-MnOOH nanowire
06/27/2012CN102011190B Method for preparing nanostructure barium strontium titanate ferroelectric film by utilizing nanocrystalline self assembly process
06/27/2012CN102011176B Silicon single crystal growth furnace with gas cold traps
06/27/2012CN101906662B Preparation method of TiO2 nanotubes modified by silver nanoparticles with different particle diameters
06/27/2012CN101901756B MOCVD growing method of polar c surface GaN film based on c surface Al2O3 substrate
06/27/2012CN101875493B Method for reducing polysilicon
06/27/2012CN101792928B High temperature piezocrystal of melilite structure and preparation method and application thereof
06/27/2012CN101780956B Method and device for preparing high purity polysilicon particles by using fluid bed reactor
06/27/2012CN101748474B Simple method for preparing linear zinc oxide whiskers
06/27/2012CN101691671B Titanium diboride whisker material and preparation method thereof
06/27/2012CN101586913B Crucible holding member and method for producing the same
06/27/2012CN101532171B Induction heating coil and method for melting granules composed of semiconductor material
06/27/2012CN101531038B Method for growing zinc oxide crystal whisker on surface of carbon fiber and fabric thereof
06/27/2012CN101405438B Apparatus for producing nitride single crystal
06/27/2012CN101400834B Silicon single-crystal pullup apparatus
06/27/2012CN101353813B Free-standing (Al, Ga, In)N and parting method for forming same
06/26/2012US8207522 Composite comprising array of needle-like crystal, method for producing the same, photovoltaic conversion element, light emitting element, and capacitor
06/26/2012US8207054 Group III nitride semiconductor substrate, substrate for group III nitride semiconductor device, and methods of making same
06/26/2012CA2532362C Ultrahard diamonds and method of making thereof
06/21/2012WO2012081789A1 System of controlling diameter of single crystal ingot and single crystal ingot growing apparatus including the same
06/21/2012WO2012081670A1 Process for production of aluminum-containing iii nitride single crystal
06/21/2012WO2012079439A1 Process for growing silicon carbide single crystal by physical vapor transport method and annealing silicon carbide single crystal in situ
06/21/2012WO2012079274A1 Process for producing polycrystal silicon using sodium fluorosilicate as by-product of phosphate fertilizer industry
06/21/2012WO2012050341A3 Fluidized bed reactor for preparing particulate polycrystalline silicon, and preparation method of polycrystalline silicon using same
06/20/2012EP2466626A2 Relaxation and transfer of strained material layers
06/20/2012EP2465980A2 Apparatus and method for manufacturing silicon carbide single crystal
06/20/2012EP2465979A2 Apparatus for manufacturing silicon carbide single crystal
06/20/2012EP2465625A1 Method and device for oroducing thin silicon rods
06/20/2012EP1736572B1 Group iii nitride crystal substrate, method for producing same, and group iii nitride semiconductor device
06/20/2012EP1632592B1 Quartz glass crucible for pulling up silicon single crystal and method for manufacture thereof
06/20/2012EP1380675B1 Method for reducing oxygen component and carbon component in fluoride
06/20/2012CN202279871U 一种用于多晶硅铸锭的陶瓷坩埚 Ceramic crucible for polysilicon ingots
06/20/2012CN102511075A Epitaxial substrate and method for producing same
06/20/2012CN102510989A Object to be treated introduction device
06/20/2012CN102505144A Preparation method for directional growth of organic micro/nano structure
06/20/2012CN102505143A Synthesis of organic-inorganic hybrid efficient fluorescent crystal material of Cu(I)
06/20/2012CN102505142A Preparation method of ytterbium thulium erbium three-adulterate dodecacalcium heptaluminate polycrystal
06/20/2012CN102505141A Graphene preparation method based on Cu film assisted annealing
06/20/2012CN102505140A Graphene preparation method based on auxiliary annealing of Ni film
06/20/2012CN102505139A Manufacturing method of polysilicon film
06/20/2012CN102501446A Neodymium-doped lanthanum bromide single crystal flash body and preparing method thereof
06/20/2012CN102071464B Nonlinear optical crystal material Sr3Y3BiB4O15 and preparation method and application thereof
06/20/2012CN102021649B Chemical vapor deposition method for preparing diamond single crystal by adding N2O gas
06/20/2012CN101796621B Method for producing single crystal thin film of organic semiconductor compound
06/20/2012CN101775647B Gold nano-crystal and preparation method thereof
06/14/2012WO2012077680A1 Method for producing substrate, method for producing semiconductor device, and substrate treatment device
06/14/2012WO2012077518A1 Perovskite manganese oxide thin film and production method for same
06/14/2012WO2012077517A1 Perovskite manganese oxide thin film
06/14/2012WO2012077279A1 Heat insulating cylinder, method for manufacturing heat insulating cylinder, and apparatus for manufacturing single crystal
06/14/2012WO2012077022A1 Method for increasing the content of ce3+ in laser materials
06/14/2012US20120145069 Melt fixture including thermal shields having a stepped configuration and a methods of using the same
06/14/2012DE102011050767A1 Verfahren zur Steuerung des thermischen Gradienten in einem Czochralski-Verfahren zum Züchten von Oxyorthosilicaten A method for controlling the thermal gradient in a Czochralski process for growing Oxyorthosilicaten
06/14/2012CA2741850A1 Method of thermal gradient control in czochralski process of growing oxyorthosilicates
06/13/2012EP2463246A1 Silica vessel and process for producing same
06/13/2012EP2462264A1 Large area deposition and doping of graphene, and products including the same
06/13/2012EP2462263A2 Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same
06/13/2012EP2462262A2 Large area deposition of graphene hetero-epitaxial growth, and products including the same
06/13/2012EP1456866B1 Apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control
06/13/2012CN202272989U 单晶硅铸锭炉的热场结构 Thermal structure of single-crystal silicon ingot furnace
06/13/2012CN202272988U 气致冷多晶硅铸锭炉的闭式冷却系统 Gas cooling polysilicon ingot furnace closed cooling system
06/13/2012CN102498241A Method for producing compound semiconductor crystal, method for manufacturing electronic device, and semiconductor substrate
06/13/2012CN102492995A Method for converting visually yellow cerium doped lutetium yttrium oxyorthosilicate crystals into colorless cerium doped lutetium yttrium oxyorthosilicate crystals in reduction atmosphere
06/13/2012CN102492994A Method for preparing calcium sulfate whiskers by using white carbon black industrial wastewater
06/13/2012CN102492993A Process for producing a nitride single crystal and apparatus therefor
06/13/2012CN102492992A GaN crystal substrate and method of manufacturing the same, and method of manufacturing semiconductor device
06/13/2012CN102492991A Lead niobate zincate-lead titanate (PZNT) single crystal material and pyroelectric application thereof
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