Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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10/27/2011 | DE102010028173A1 Crystallization method for producing block made of material whose melt is electrically conductive, comprises e.g. providing crystallization system, loading container with material and melting it and initiating crystallization |
10/26/2011 | EP2381487A1 Substrate for light-emitting element |
10/26/2011 | EP2381018A1 Compound semiconductor substrate, semiconductor device, and process for producing the semiconductor device |
10/26/2011 | EP2381017A1 Method for washing polycrystalline silicon, washing device, and method for producing polycrystalline silicon |
10/26/2011 | EP2379758A2 Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon |
10/26/2011 | EP2379252A1 Component having varying structures and method for production |
10/26/2011 | EP2379214A1 High pressure high temperature (hpht) method for the production of single crystal diamonds |
10/26/2011 | CN202017073U Composite plate module for polycrystalline silicon ingot casting furnaces |
10/26/2011 | CN202017070U Combined crucible for containing silicon material |
10/26/2011 | CN102227390A Zirconium oxide powder |
10/26/2011 | CN102227379A Method for manufacturing zirconium derivative, hydrate, or oxide |
10/26/2011 | CN102227374A Silicon for n-type solar cell and process for producing phosphorus-doped silicon |
10/26/2011 | CN102226991A Copper palladium alloy monocrystal bonding wire and manufacturing method thereof |
10/26/2011 | CN102226847A Microstructure fiber with fiber core modified by inverse opal and preparation method thereof |
10/26/2011 | CN102226299A New hydrothermal synthesis method of zinc borate whisker |
10/26/2011 | CN102226298A Preparation method of metal oxide nanowires |
10/26/2011 | CN102226297A Oblique ZnO nanowire array and growth method thereof |
10/26/2011 | CN102226296A Efficient directional solidification impurity-removing technology by utilizing polycrystalline silicon ingot production furnace |
10/26/2011 | CN102226295A Method for designing control parameters of quaternary compound molecular beam epitaxy component |
10/26/2011 | CN102226294A Modulation method for silicon-based GaN crystal structure with optimal field emission performance |
10/26/2011 | CN102225652A Grapheme-La2Si2O7/zinc-alumnium-magnesium anticorrosion coating for polycrystalline silicon ingot furnace |
10/26/2011 | CN102225651A Grapheme-Sr3Ti2O7/zinc-aluminum-zirconium corrosion resistant coating for polysilicon ingot furnace |
10/26/2011 | CN102225650A Graphene-LaTaO4/zinc-aluminum-nickel system corrosion resisting coating used for polysilicon ingot furnaces |
10/26/2011 | CN101709508B Preparation method of bismuth-containing eulytite bismuth silicate crystals |
10/26/2011 | CN101671848B Preparation method of high length-diameter ratio anhydrous calcium sulfate whisker |
10/26/2011 | CN101649449B Preparation method of ZnS/ZnSe composite infrared transmission material |
10/26/2011 | CN101514490B Cultivation growing process for optical quartz crystal |
10/26/2011 | CN101168852B Mass production method for calcium sulfate whisker |
10/26/2011 | CN101089244B Molten-salt growth method for zinc oxide single crystal |
10/26/2011 | CN101089243B Molten-salt method for growing zinc oxide xingle crystal using bismuth borate as flux |
10/26/2011 | CN101010453B Method for preparing crystal of nitride of metal belonging to group 13 of periodic table and method for manufacturing semiconductor device using the same |
10/25/2011 | US8044493 GaAs semiconductor substrate for group III-V compound semiconductor device |
10/25/2011 | CA2404743C Optical device with two dimensional photonic band gap |
10/20/2011 | WO2011130516A2 Method of making a diamond particle suspension and method of making a polycrystalline diamond article therefrom |
10/20/2011 | WO2011130023A2 Method of preparing polycrystalline diamond from derivatized nanodiamond |
10/20/2011 | WO2011129246A1 Single-crystal substrate, single-crystal substrate having crystalline film, crystalline film, method for producing single-crystal substrate having crystalline film, method for producing crystalline substrate, and method for producing element |
10/20/2011 | WO2011129150A1 Silicon carbide substrate |
10/20/2011 | WO2011128296A1 Production of a crystalline semiconductor material |
10/20/2011 | WO2011128292A1 Production of monocrystalline semiconductor materials |
10/20/2011 | US20110253973 Semiconductor layer |
10/20/2011 | CA2796035A1 Method of preparing polycrystalline diamond from derivatized nanodiamond |
10/20/2011 | CA2795932A1 Method of making a diamond particle suspension and method of making a polycrystalline diamond article therefrom |
10/20/2011 | CA2795395A1 Production of monocrystalline semiconductor materials |
10/20/2011 | CA2795297A1 Production of a crystalline semiconductor material |
10/20/2011 | CA2765861A1 Silicon carbide substrate |
10/19/2011 | EP2378545A1 Iii-nitride semiconductor growth substrate, iii-nitride semiconductor epitaxial substrate, iii-nitride semiconductor element, iii-nitride semiconductor freestanding substrate, and method for fabricating these |
10/19/2011 | EP2377976A1 Group iii nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group iii nitride substrate |
10/19/2011 | EP2377975A1 Method of growing gallium nitride crystals and process for producing gallium nitride crystals |
10/19/2011 | EP2377973A1 Preparation of nanoparticles |
10/19/2011 | EP2376681A2 Production of single crystal cvd diamond rapid growth rate |
10/19/2011 | EP2376680A1 Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof |
10/19/2011 | EP2376244A1 Process for producing multicrystalline silicon ingots by the induction method and apparatus for carrying out the same |
10/19/2011 | EP1726050B1 Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and ink jet recording head |
10/19/2011 | CN1997779B Thin film material and method of manufacturing the same |
10/19/2011 | CN1965111B Manufacture of cadmium mercury telluride |
10/19/2011 | CN102224113A Silica vessel and process for producing same |
10/19/2011 | CN102222624A Preparation method of single crystal copper wire |
10/19/2011 | CN102220644A Method for improving performance of cadmium zinc telluride crystal |
10/19/2011 | CN102220643A Wet method for passivating surface of germanium monocrystal |
10/19/2011 | CN102220641A Synthesis method of monoclinic crystal phase rare-earth iso-oxy-sulfur superfine nanowire and wire-based superstructure |
10/19/2011 | CN102220640A Preparation method of gallium nitride single crystal |
10/19/2011 | CN102220639A Mott-doped compound crystal and preparation method thereof |
10/19/2011 | CN102220638A Preparation method of cubic iron trioxide monocrystal |
10/19/2011 | CN102220637A Micron/nanometer hierarchical structure of BiOCl, BiOBr and Bi2S3 |
10/19/2011 | CN102220636A Combined type crucible |
10/19/2011 | CN102220634A Method to raise production efficiency of czochralski silicon mono-crystal |
10/19/2011 | CN102220633A Production technology of semiconductor grade silicon single crystal |
10/19/2011 | CN102220632A Technical method of N-type Czochralski silicon monocrystal |
10/19/2011 | CN102220628A Device for growing semiconductor crystals |
10/19/2011 | CN102219796A Coordination polymer with selective ion exchange property, and applications thereof |
10/19/2011 | CN102219360A Method for manufacturing polycrystalline silicon ingot casting fused quartz crucible without spraying |
10/19/2011 | CN102219221A Method for purifying polycrystalline silicon by directional solidification and slag refining |
10/19/2011 | CN101901761B MOCVD growth method of non-polar m-surface GaN based on gamma-surface LiAlO2 substrate |
10/19/2011 | CN101698961B Preparation method of surface plasmonic crystal |
10/19/2011 | CN101665977B Thermal shield device for crystal pulling furnace |
10/19/2011 | CN101522277B Crystallizer used for biomacromolecule crystallization, method and application thereof |
10/19/2011 | CN101163824B Method of and system for forming sic crystals having spatially uniform doping impurities |
10/18/2011 | US8038794 Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device |
10/18/2011 | US8038792 Methods and apparatus for rapid crystallization of biomolecules |
10/13/2011 | WO2011127258A1 Fabrication of large-area hexagonal boron nitride thin films |
10/13/2011 | WO2011126145A1 Process for producing epitaxial single-crystal silicon carbide substrate and epitaxial single-crystal silicon carbide substrate obtained by the process |
10/13/2011 | WO2011125897A1 Manufacturing method of metal compound crystal, ornament manufacturing method, and metal compound crystal |
10/13/2011 | WO2011125891A1 Apparatus for manufacturing single crystal and method for manufacturing single crystal |
10/13/2011 | WO2011124997A1 Substrate for epitaxial growth |
10/13/2011 | DE102010015354A1 Herstellung eines kristallinen Halbleiterwerkstoffs Preparing a crystalline semiconductor material |
10/12/2011 | EP2373835A1 A METHOD TO CONTROL THE DISPERSIBILITY AND BARRIER PROPERTIES OF DRIED NANOCRYSTALLINE CELLULOSE IN SOLUTIONS OF DIFFERENT pH AND IONIC STRENGTH |
10/12/2011 | EP1349970B1 Method for growing a solid type ii-vi semiconductor material |
10/12/2011 | EP1346085B1 Method for producing group iii metal nitride based materials |
10/12/2011 | CN102215614A Graphite electrode and polycrystalline ingot furnace |
10/12/2011 | CN102214740A Method for improving antistatic capability of gallium nitride based light emitting diode |
10/12/2011 | CN102214739A Method for roughing epitaxy of GaN (gallium nitride)-based LED (light-emitting diode) |
10/12/2011 | CN102212886A Flap valve box observing window of single crystal furnace |
10/12/2011 | CN102212885A Texturing method for polycrystalline silicon solar cells |
10/12/2011 | CN102212884A Method for preparing calcium sulfate crystal whisker from many kinds of industrial waste residue gypsum serving as raw materials |
10/12/2011 | CN102212883A Nitride semiconductor substrate, production method therefor and nitride semiconductor device |
10/12/2011 | CN102212882A Non-linear optical crystal of rubidium lithium borate compound, preparation method thereof and application thereof |
10/12/2011 | CN102212881A Thermal field for polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace |
10/12/2011 | CN102212880A Elementary substance Bi nano-structured material and preparation method and application thereof |
10/12/2011 | CN102212879A Organic-inorganic hybridization three-order non-linear optical crystalline material and synthetic method thereof |
10/12/2011 | CN102212878A Method for preparing acicular and fungiform Bi2O3 nano materials |