Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
03/2012
03/28/2012CN102392303A Method for preparing basic magnesium chloride whisker from light-burnt powder with one-step process
03/28/2012CN102392302A Method for preparing LiFePO4 by microwave water according to heat method
03/28/2012CN102392301A Method for judging seed crystal melting state in directional solidification method and crystal pulling control system
03/28/2012CN102392300A Production method of solar energy level polysilicon ingot with crystalline grains arranged regularly
03/28/2012CN102392298A Composite baffle used for polysilicon casting
03/28/2012CN102392297A Zinc electrolyzing and recycling device and processing method
03/28/2012CN102392295A Weighing device for sapphire single crystal furnace
03/28/2012CN102392293A Crystal silicon ingot furnace thermal field thermal gate control device and control method thereof
03/28/2012CN102392282A Method for electrochemical preparation of cadmium telluride semiconductor film under alkaline water phase condition
03/28/2012CN102392270A Method for preparing dendritic Ni nanocrystalline
03/28/2012CN102391304A 4-(2'-pyridine)-pyrimidine diperoxovanadate ammonium salt coordination compound and single crystal culture method and application thereof
03/28/2012CN102104078B Method for preparing one-dimensional nanometer material with ZnO/ZnS core-shell structure and single crystal ZnS nanotube
03/28/2012CN102061514B Preparation method of gas-phase heavy-doping boron zone-melting silicon single crystal
03/28/2012CN102051677B Method for growing graphene on large-diameter 6H-SiC carbon surface
03/28/2012CN101914812B Method for preparing silver-lead-bismuth-tellurium thermoelectric material
03/28/2012CN101901759B MOCVD (Metal-organic Chemical Vapor Deposition) growth method of nonpolar a-side GaN film on r-side based Al2O3 substrate
03/28/2012CN101880908B Method for preparing originated multi-section yttrium vanadate laser crystal
03/28/2012CN101591809B Large-size hydrated sodium borate non-linear optical crystal, preparation method and application thereof
03/28/2012CN101415867B Method and apparatus for manufacturing group iii nitride compound semiconductor
03/27/2012CA2583683C Surface reconstruction method for silicon carbide substrate
03/22/2012WO2012036263A1 Container for producing silicon ingot and method for producing silicon ingot
03/22/2012WO2012036239A1 Fluoride single crystal, scintillator, and production method for fluoride single crystal
03/22/2012WO2012035268A1 Device and method for crystallising inorganic or organic substances
03/22/2012US20120070962 Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate
03/22/2012DE112007000867B4 Vorrichtung zum Herstellen eines Gruppe III-Nitrid basierten Verbindungshalbleiters Apparatus for manufacturing a Group III nitride based compound semiconductor
03/22/2012CA2808242A1 Glass substrates having carbon nanotubes grown thereon and methods for production thereof
03/21/2012EP2432020A1 Semiconductor device
03/21/2012EP2432002A1 Silicon carbide substrate and semiconductor device
03/21/2012EP2432001A1 Method for producing semiconductor substrate
03/21/2012EP2432000A1 Silicon carbide substrate, semiconductor device, and method for manufacturing silicon carbide substrate
03/21/2012EP2431505A2 Equipment for manufacturing silicon carbide single crystal
03/21/2012EP2431504A1 Method for manufacturing an organic thin fim transistor using a nano-crystalline diamond film
03/21/2012EP2431503A1 Method of manufacturing an organic electroluminescent device or an organic photoelectric receiving device using a nano-crystalline diamond film
03/21/2012EP2431338A1 Silica vessel and process for producing same
03/21/2012EP2430222A1 Methods of making an article of semiconducting material on a mold comprising semiconducting material
03/21/2012EP2430221A1 Methods of making an article of semiconducting material on a mold comprising particles of a semiconducting material
03/21/2012EP2430220A1 Method of nanostructuring a film or a wafer of material of the metal oxide or semi-conductor type
03/21/2012EP2430116A2 Scintillator crystal materials, scintillators and radiation detectors
03/21/2012EP2004883B1 Method of manufacturing a silicon carbide single crystal
03/21/2012EP1143045B1 Silicon single crystal wafer for epitaxial wafer, epitaxial wafer and methods for producing the same and evaluating the same
03/21/2012EP0942459B1 Method of growing nitride semiconductors
03/21/2012CN202170375U 用于晶体生长的检测系统 Detection system for crystal growth
03/21/2012CN202170373U 提拉法生长蓝宝石晶体的炉体 Czochralski grown sapphire crystal furnace
03/21/2012CN1909190B Gallium nitride device substrate containing a lattice parameter altering element
03/21/2012CN102388170A Device for producing single crystal of silicon carbide
03/21/2012CN102388169A Pot for silicon suitable for producing semiconductors
03/21/2012CN102386216A Nitride-based compound semiconductor and nitride-based compound semiconductor device
03/21/2012CN102386073A Method for preparing InAsSb quantum dots
03/21/2012CN102383196A Novel non-linear optical crystal gallium germanium barium sulfide, and growing method and application thereof
03/21/2012CN102383195A Bridgman method growth process of cesium iodide and thallium-doped cesium iodide monocrystalline
03/21/2012CN102383194A Polycrystalline silicon and method for production thereof
03/21/2012CN102383193A Free-standing (Al, Ga, In)N and parting method for forming same
03/21/2012CN102383192A Growth method of germanium substrate and germanium substrate
03/21/2012CN102383191A Preparation method of (103) oriented yttrium-barium-copper-oxide (YBa2Cu3O7-delta, YBCO) high-temperature superconductive film
03/21/2012CN102383189A Preparation method for lead zinc niobate-lead titanate monocrystal
03/21/2012CN102383187A Growth method of sapphire single crystal
03/21/2012CN102383186A Pulling method for growing Ca12Al14O33 monocrystal in non-stoichiometric ratio melt
03/21/2012CN102383184A Crystal, and method and device for casting same
03/21/2012CN102383183A Crystalline silicon ingot casting furnace
03/21/2012CN102383182A Molten-salt growth method for reducing central envelope of BBO(Barium Boron Oxide) crystals
03/21/2012CN102383181A Method for producing n-type group iii nitride single crystal, n-type group iii nitride single crystal, and crystal substrate
03/21/2012CN102383180A Synthesizing method for titanium dioxide single-crystal rutile nanowire array film
03/21/2012CN102383179A Method of comprehensive utilization of industrial waste acid and ardealite
03/21/2012CN102382979A Technique for extracting rare earth from rare earth tailing and preparing calcium sulfate whiskers
03/21/2012CN102157353B Method for preparing diamond substrate for high-heat-conductivity integrated circuit
03/21/2012CN101935061B Method for removing impurity of mother liquid in preparation process of calcium carbonate crystal whisker
03/21/2012CN101871127B Size-controllable synthesis method for MSe (M equal to Cd, Pb) nanocrystals
03/21/2012CN101841018B Single crystal lithium manganese oxide for lithium ion battery and preparation method thereof
03/21/2012CN101831695B Silicon single crystal growth device
03/21/2012CN101781791B Method for removing impurities in single crystal rod straight pulling process
03/21/2012CN101643937B Growth method of bismuth silicate monocrystal with hydrothermal method
03/21/2012CN101608340B Iron-based high-temperature superconductive crystal and preparation method thereof
03/21/2012CN101605918B Polycrystalline diamond (pcd) materials
03/21/2012CN101435110B Preparation of germanium three-dimensional photonic crystal
03/21/2012CN101331623B Thermoelectric material, thermoelectric converter using same, and electronic device and cooling device comprising such thermoelectric converter
03/21/2012CN101311346B Method for manufacturing polysilicon
03/21/2012CN101241883B Preparation method of a coating of gallium nitride
03/21/2012CN101137774B Container for easily oxidizable or hygroscopic substance, and method for heating and pressuring treatment of easily oxidizable or hygroscopic substance
03/20/2012US8138003 Method of manufacturing nitride semiconductor substrates having a base substrate with parallel trenches
03/20/2012US8137459 Method for producing nanoparticles for magnetic fluids by electron-beam evaporation and condensation in vacuum, a magnetic fluid producing method and magnetic fluid produced according to said method
03/20/2012US8137458 Epitaxial growth of ZnO with controlled atmosphere
03/15/2012WO2012032948A1 Carbon crucible
03/15/2012WO2012031417A1 Method for controlling defects in czochralski silicon single crystal rod
03/15/2012WO2011153994A3 Method for growing ii-vi semiconductor crystals and ii-vi semiconductor crystals
03/14/2012EP2428596A2 Laser crystal components joined with thermal management devices
03/14/2012EP1666644B1 Method for producing crystal of fluoride
03/14/2012EP1131176B2 Single crystal vane segment and method of manufacture
03/14/2012CN202164388U 一种SiC单晶生长籽晶粘接压盘 One kind of seed bonded SiC single crystal growth platen
03/14/2012CN202164387U 蓝宝石单晶生长变速器 Sapphire single crystal growth Transmission
03/14/2012CN202164386U 超高纯锗单晶炉 Ultra-pure germanium crystal furnace
03/14/2012CN202164385U 高纯锗多晶制备区熔炉 Preparation of high-purity polycrystalline germanium zone furnace
03/14/2012CN202164384U 生产具有高转换效率准单晶硅锭的铸锭炉 Production associate with high conversion efficiency monocrystalline silicon ingot ingot furnace
03/14/2012CN202164383U 多晶热场用顶部保温板 Polycrystalline Thermal insulation board with the top
03/14/2012CN202164381U 一种可重复使用的铸锭用坩埚 A reusable crucible ingot
03/14/2012CN202164380U 高产出多晶硅铸锭炉热场结构 High-yield polycrystalline silicon ingot furnace thermal field structure
03/14/2012CN202164379U 含涂层的SiC复合坩埚 SiC composite coatings containing crucible
03/14/2012CN202164375U 一种坩埚罩和坩埚系统 One kind of crucible and the crucible cover system
03/14/2012CN1958887B Single crystalline A-plane nitride semiconductor wafer having orientation flat
03/14/2012CN102379025A Process for production of silicon carbide substrate
03/14/2012CN102378832A Supporting substrate, bonding substrate, method for manufacturing supporting substrate, and method for manufacturing bonding substrate
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