C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
12/2011
12/14/2011	CN102277617A 循环利用氩气的多晶硅铸定炉联机系统及其生产工艺 Recycling argon polysilicon casting furnace fixed-line system and its production process
12/14/2011	CN102277609A 一种可见光活性的碳氮共掺杂TiO<sub>2</sub>纳米管薄膜的制备方法 A visible-light activity carbonitriding prepared TiO <sub> 2 </ sub> Nanotube Thin Films
12/14/2011	CN102277170A 辐射探测用的碘化物闪烁体 Radiation detection with iodide scintillator
12/14/2011	CN102274744A 多孔碳化硅表面单层、b轴取向ZSM-5沸石涂层材料及其制备 Porous silicon carbide surface monolayer, b-axis oriented ZSM-5 zeolite coating material and preparation
12/14/2011	CN101866960B 利用部分阳离子交换反应制备CdS-Bi<sub>2</sub>S<sub>3</sub>复合纳米晶方法 Use part of the cationic reaction of CdS-Bi <sub> 2 </ sub> S <sub> 3 </ sub> nanocrystalline composite method for exchanging
12/14/2011	CN101809769B 化合物半导体外延晶片及其制造方法 Compound semiconductor epitaxial wafer and its manufacturing method
12/14/2011	CN101788786B 一种制备氧化镁晶体电弧炉的热分析控制方法 Thermal analysis of a magnesium oxide crystals prepared by arc furnace control method
12/14/2011	CN101760778B 一种半导体材料棒材的制造方法 Method of producing a semiconductor material rod
12/14/2011	CN101724852B 一种太阳能级多晶硅材料的制备方法 Preparation of a solar grade polysilicon materials
12/14/2011	CN101476156B 掺杂钆钇钪镓石榴石、钆钇钪镓铝石榴石及其熔体法晶体生长方法 Gadolinium yttrium scandium gallium garnet, gadolinium gallium, scandium and yttrium aluminum garnet crystal growth method and melt doping
12/14/2011	CN101428776B 一种单分散稀土掺杂磷酸镧荧光量子点的制备方法 A method for preparing monodisperse rare earth doped lanthanum phosphate phosphor quantum dots
12/14/2011	CN101426723B 硅粒的处理方法和装置 Method and apparatus for processing silicon particles
12/14/2011	CN101319372B 一种低温可控制备氧化锌纳米线的方法及其应用 Low-temperature controlled preparation of zinc oxide nanowires and Its Application
12/14/2011	CN101311382B 一种Te/Bi或Te/Bi<sub>2</sub>Te<sub>3</sub>核壳异质结结构纳米线及其制备方法 One kind of Te / Bi or Te / Bi <sub> 2 </ sub> Te <sub> 3 </ sub> core-shell nanowire heterojunction structure and its preparation method
12/08/2011	WO2011152799A1 Method of forming epitaxial zinc oxide films
12/08/2011	WO2011152333A1 Bi-substituted rare earth iron garnet single crystal, method for producing same, and optical device
12/08/2011	WO2011151450A1 Method and system for growing nano-scale materials
12/08/2011	US20110300605 Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus
12/08/2011	DE102010029756A1 Herstellungsverfahren für einen SiC-Volumeneinkristall mit großer Facette und einkristallines SiC-Substrat mit homogener Widerstandsverteilung Manufacturing method of a SiC bulk single crystal with a large facet and SiC substrate with a homogeneous resistance distribution
12/08/2011	DE102010029755A1 Producing silicon carbide volume single crystal, useful for producing semiconductor device, comprises e.g. producing silicon carbide growth gas phase in crystal growth region of crucible, and growing silicon carbide volume single crystal
12/08/2011	DE102007027111B4 Siliciumscheibe mit guter intrinsischer Getterfähigkeit und Verfahren zu ihrer Herstellung Silicon wafer with good intrinsic gettering capability and methods for their preparation
12/07/2011	EP2392697A1 Method and system for growing nano-scale materials
12/07/2011	EP2392547A2 Method of graphene manufacturing
12/07/2011	EP2391747A1 Seed layers and process of manufacturing seed layers
12/07/2011	EP2391578A1 Method for forming nanowires and associated method for manufacturing an optical component
12/07/2011	CN202064036U 宝石炉 Gem furnace
12/07/2011	CN202064035U 多晶硅铸锭炉隔热装置 Polycrystalline silicon ingot furnace insulation device
12/07/2011	CN202064034U 铸锭炉炉体 Ingot Furnace
12/07/2011	CN202064033U 硅芯母料底座 Silicon masterbatch base
12/07/2011	CN202064029U 一种晶硅铸锭炉双腔室热场 A crystalline silicon ingot furnace dual chamber thermal field
12/07/2011	CN102272891A 外延生长用内部改性衬底和使用其制造的晶体成膜体、器件、块状衬底以及它们的制造方法 Internal reforming epitaxial growth using the crystal substrate and the film-forming substance, device, bulk substrate manufacturing method thereof and its manufacture
12/07/2011	CN102272362A Ⅲ族氮化物衬底、包含其的半导体设备及制造经表面处理的Ⅲ族氮化物衬底的方法 Ⅲ nitride substrate, comprising a semiconductor device and its manufacturing method of the surface treated Ⅲ nitride substrate
12/07/2011	CN102272361A 单晶锗晶体生长的系统、方法和衬底 Single crystal germanium crystal growth system, the method and the substrate
12/07/2011	CN102272360A 制备用于硅晶体生长的硅粉熔体的方法 Method for preparing a silicon melt in crystal growth of silicon powder
12/07/2011	CN102272359A 单晶制造装置、单晶的制造方法及单晶 Single crystal manufacturing apparatus, a single crystal manufacturing method and a single crystal
12/07/2011	CN102272358A 单晶培养用反应容器以及单晶的培养方法 Crystal culture method for culturing the reaction vessel and a single crystal
12/07/2011	CN102272070A 透光性多晶材料及其制造方法 Translucent polycrystalline material and manufacturing method thereof
12/07/2011	CN102268740A 织构化单晶 Textured monocrystalline
12/07/2011	CN102268738A 一种Sb-Te-Ti相变存储材料 One kind of Sb-Te-Ti phase change memory material
12/07/2011	CN102268737A 生成iii-n层的方法，和iii-n层或iii-n衬底，以及其上的器件 The method of generating iii-n layer, and the device iii-n layer or iii-n substrate, and on which
12/07/2011	CN102268736A 一种碳化硅纳米线阵列的气相层间扩散反应工艺制备方法 Reaction process for the preparation of an inter-SiC nanowire arrays vapor diffusion layer
12/07/2011	CN102268735A 一种提高4H-SiC单晶晶型稳定性的方法 An enhanced type 4H-SiC single crystal stability methods
12/07/2011	CN102268734A 一种镨铈掺杂焦硅酸镥发光材料及其制备方法 An lutetium disilicate luminescent material and method for cerium, praseodymium-doped
12/07/2011	CN102268733A 具有矩形磁滞回线和高矫顽磁场的磁光晶体及制备方法 Optic crystal and preparation method has a rectangular hysteresis loop and high coercivity magnetic field
12/07/2011	CN102268732A 单晶及其制造方法 Single crystal and manufacturing method thereof
12/07/2011	CN102268731A 用于晶体生长的温场系统 Temperature field system for crystal growth
12/07/2011	CN102268730A 蓝宝石单晶生长变速器及其工作方法 Transmission sapphire crystal growth and its working methods
12/07/2011	CN102268729A 一种450型铸锭炉及其铸锭工艺 One kind of 450 ingot furnace and ingot process
12/07/2011	CN102268728A 用于多晶硅铸锭炉的改进结构的热交换台 Polycrystalline silicon ingot furnace heat for improved structure of exchange
12/07/2011	CN102268726A 一种cz直拉法太阳能单晶生长工艺 One kind of solar cz Czochralski crystal growth process
12/07/2011	CN102268724A 多晶硅锭及其制造方法、太阳能电池 Polycrystalline silicon ingot manufacturing method thereof, a solar cell
12/07/2011	CN102268723A 一种粗单晶碳化钨粉体的制备方法 Preparation of a coarse carbide crystal powder
12/07/2011	CN102268722A 一种半水硫酸钙晶须制备的方法 Methods of calcium sulfate whisker of a semi-prepared
12/07/2011	CN102267697A 一种钠循环法生产太阳能级多晶硅的工艺方法 Process for production of a sodium loop solar grade polysilicon
12/07/2011	CN101851784B 化合物硼酸锂铯非线性光学晶体及其制备方法和用途 Compound cesium lithium borate nonlinear optical crystal and its preparation method and use
12/07/2011	CN101838849B 一种CuAlO<sub>2</sub>单晶的制备方法 Method for preparing CuAlO <sub> 2 </ sub> single crystals
12/07/2011	CN101768781B 一种微波溶剂热法制备Bi<sub>4-X</sub>La<sub>X</sub>Ti<sub>3</sub>O<sub>12</sub>铁电薄膜的方法 A microwave solvothermal method Prepared Bi <sub> 4-X </ sub> La <sub> X </ sub> Ti <sub> 3 </ sub> O <sub> 12 </ sub> ferroelectric thin films
12/07/2011	CN101767938B 一种WO<sub>3</sub>水合物纳米薄膜的制备方法 One kind of WO <sub> 3 </ sub> hydrate nanofilms preparation
12/07/2011	CN101709509B 一种制备硼酸镁晶须的方法 A method of preparing magnesium borate whisker
12/07/2011	CN101654806B 大尺寸氧化锌晶须的生产方法 Large zinc oxide whisker production methods
12/07/2011	CN101597788B 在氮气下融化多晶硅制备掺氮铸造单晶硅的方法 Under nitrogen nitrogen-doped polycrystalline silicon melt casting method monocrystalline
12/07/2011	CN101565184B 一种多晶硅生产用氢化炉装置内电极密封的方法及装置 One kind of polysilicon production equipment used in the hydrogenation furnace electrode method and apparatus for sealing
12/07/2011	CN101476153B 多晶硅的还原生产工艺及其生产用还原炉 Reduction of polysilicon production technology and production reduction furnace
12/01/2011	WO2011149906A1 Smoothing method for semiconductor material and wafers produced by same
12/01/2011	WO2011148843A1 Silicon carbide substrate and method for producing same
12/01/2011	US20110290174 One hundred millimeter single crystal silicon carbide wafer
12/01/2011	DE19806045B4 Verfahren zum Herstellen von einkristallinen Siliziumstäben unter Steuern desZiehgeschwindigkeitsverlaufs in einem Heißzonenofen A method of producing single crystal silicon rods Controlling desZiehgeschwindigkeitsverlaufs in a hot zone furnace
12/01/2011	DE10248964B4 Verfahren zur Sublimationszüchtung von Aluminiumnitrid-Einkristallen A method of sublimation growth of aluminum nitride single crystals
12/01/2011	DE102010022069A1 Verfahren zur Züchtung von II-VI-Halbleiterkristallen und II-VI-Halbleiterschichten A process for the production of II-VI semiconductor crystals and II-VI semiconductor layers
12/01/2011	DE102010021856A1 Verfahren zur Herstellung eines Einkristall-MSM-Körpers A process for producing a single crystal body MSM
12/01/2011	DE102008013325B4 Halbleiterscheibe aus einkristallinem Silicium und Verfahren zu deren Herstellung Semiconductor wafer made of monocrystalline silicon, and process for their preparation
12/01/2011	CA2775065A1 Silicon carbide substrate and method for manufacturing same
11/2011
11/30/2011	EP2390685A1 Method for manufacturing single crystal optical lens
11/30/2011	EP2390387A1 Electrically conductive gaas crystal, electrically conductive gaas crystal substrate, and processes for producing those materials
11/30/2011	EP2390386A1 Method for producing nitride semiconductor crystal, nitride semiconductor crystal, and apparatus for producing nitride semiconductor crystal
11/30/2011	EP2389462A1 Iridescent solid nanocrystalline cellulose films incorporating patterns and method for their production
11/30/2011	EP2038229B1 Artificial quartz member, process for producing the same, and optical element comprising the same
11/30/2011	EP1920080B1 High colour diamond
11/30/2011	CN202058774U 一种制备太阳能电池级多晶硅的生产系统 A solar grade polysilicon production system preparation
11/30/2011	CN202054931U 硅单晶炉摄像头安装支架 Monocrystalline silicon furnace camera mounting bracket
11/30/2011	CN202054929U 硅单晶炉测温探头安装机构 Monocrystalline silicon furnace temperature probe mounting mechanism
11/30/2011	CN202054928U 一种多晶硅铸锭炉安全监控装置 One kind of polycrystalline silicon ingot furnace safety monitoring device
11/30/2011	CN202054927U 多晶硅铸锭炉热场护套结构 Polycrystalline silicon ingot furnace thermal field jacket structure
11/30/2011	CN202054926U 一种多晶硅铸锭炉 One kind of polycrystalline silicon ingot furnace
11/30/2011	CN202054923U 硫硒化镉锌纳米线的制备装置 Preparation device zinc cadmium sulfide selenide nanowires
11/30/2011	CN202054920U 用于定向凝固法生长单晶硅的装置 Directional solidification apparatus for growing single crystal silicon
11/30/2011	CN202052653U 一种多晶硅太阳能电池铸锭用石英坩埚的喷涂装置 One kind of polycrystalline silicon solar cell with a quartz crucible ingot coating device
11/30/2011	CN1938457B 氮化镓单晶的生长方法和氮化镓单晶 The method of growing a single crystal gallium nitride and monocrystalline gallium nitride
11/30/2011	CN1865534B 单晶金刚石及其制备方法 Single crystal diamond and its preparation method
11/30/2011	CN102264957A 多晶硅的清洗方法和清洗装置，以及多晶硅的制造方法 Polysilicon cleaning method and a cleaning apparatus, and a method for producing polycrystalline silicon
11/30/2011	CN102264955A 制造SiC单晶的方法 The method of making an SiC single crystal
11/30/2011	CN102263014A 一种用晶核预控制激光晶化法制备多晶硅薄膜材料的方法 A method used to control the laser crystallization nuclei pre-prepared polycrystalline silicon thin film materials
11/30/2011	CN102260914A 一种大尺寸lgs晶体的生长方法 A method of growing large crystals lgs
11/30/2011	CN102260913A 新型非线性光学晶体硼酸铍铷 New nonlinear optical crystal beryllium rubidium borate
11/30/2011	CN102260912A 新型非线性光学晶体低温相硼酸铍钾 The new nonlinear optical crystal with low potassium borate beryllium
11/30/2011	CN102260911A 新型非线性光学晶体中温相硼酸铍钾 The new nonlinear optical crystal temperature phase beryllium potassium borate
11/30/2011	CN102260910A 一种用于提拉法生长lgs晶体的原料合成方法 A Czochralski crystal growth lgs synthesized method for
11/30/2011	CN102260909A 一种硅提纯的方法 Silicon purification method
11/30/2011	CN102260907A 一种ZnO纳米同质pn结阵列的制备方法 Method for preparing homogeneous nano-ZnO pn junction arrays
11/30/2011	CN102260906A 一种制备Ge包覆GeTe纳米线同轴异质结的方法 A method for preparing a coaxial Ge coated GeTe nanowire heterostructures

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