| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
|---|
| 09/21/2011 | CN201981292U 一种硅单晶生长炉 One kind of silicon single crystal growth furnace |
| 09/21/2011 | CN201981288U 硅单晶生长炉的导流筒升降机构 Silicon crystal growth furnace draft tube lifting mechanism |
| 09/21/2011 | CN201979614U 硅棒的对接夹具 Silicon rod butt fixture |
| 09/21/2011 | CN102197169A Apparatus and method of use for casting system with independent melting and solidification |
| 09/21/2011 | CN102197168A Method and apparatus for manufacturing SiC single crystal film |
| 09/21/2011 | CN102197167A Process for producing single-crystal sapphire |
| 09/21/2011 | CN102197166A Process for producing single-crystal sapphire |
| 09/21/2011 | CN102191560A 3-oxooleanolic acid monocrystal and culture method thereof |
| 09/21/2011 | CN102191559A Non-linear optical crystals, zinc diethyldithiocarbamate aluminum hexaborate and preparation method and application thereof |
| 09/21/2011 | CN102191558A Non-linear optical crystals dimethylammonium aluminum pentaborate dehydrate and preparation method and application thereof |
| 09/21/2011 | CN102191557A Nonlinear optical crystal dimethyl ammonium aluminum pentaborate monohydrate and preparation and application thereof |
| 09/21/2011 | CN102191556A Novel Zintl-phase thermoelectric compound and preparation method thereof |
| 09/21/2011 | CN102191555A Preparation method for copper-indium-selenium nanotube array film |
| 09/21/2011 | CN102191554A Infrared non-linear optical crystals Ln4GaSbS9 |
| 09/21/2011 | CN102191553A Novel infrared nonlinear optical crystal and preparation method thereof |
| 09/21/2011 | CN102191552A Improved semi-insulating group III metal nitride and method of manufacture |
| 09/21/2011 | CN102191551A Neodymium-doped potassium barium gadolinium molybdate crystals and preparation method and application thereof |
| 09/21/2011 | CN102191550A Nonlinear optical crystals cadmium diethyldithiocarbamate aluminum hexaborate and preparation method and application thereof |
| 09/21/2011 | CN102191549A Passively Q-switched crytal material and preparation method thereof |
| 09/21/2011 | CN102191548A Nonlinear optical and ferroelectric crystals dimethylammonium germanium tetraborate and preparation method and application thereof |
| 09/21/2011 | CN102191547A Nonlinear optical crystal potassium zinc triskaideca-borate hydrate, and preparation and application thereof |
| 09/21/2011 | CN102191546A The method of cuprous chloride crystal growth |
| 09/21/2011 | CN102191545A Method for growing cuprous bromide crystals |
| 09/21/2011 | CN102191544A Inorganic nonlinear optical material lead iodo-borate crystal, and preparation method and application thereof |
| 09/21/2011 | CN102191543A Iron arsenide high-temperature superconducting crystal, and preparation method thereof |
| 09/21/2011 | CN102191542A Equipment and method for preparing high-purity directionally crystallized polysilicon |
| 09/21/2011 | CN102191541A Dual-temperature-zone synthesis method and apparatus for phosphorus-silicon-cadmium polycrystal material |
| 09/21/2011 | CN102191540A Method for growing horizontally arranged zinc oxide nanowires on non-polar sapphire substrate |
| 09/21/2011 | CN102191539A Method of growing nitride semiconductor and nitride semiconductor substrate formed using the same |
| 09/21/2011 | CN102191538A Anti-fracture self-centering precise seed crystal clamping structure |
| 09/21/2011 | CN102191536A Method for controlling crystallization and nucleation on crucible bottom when using directional solidification method to grow silicon crystal |
| 09/21/2011 | CN102191535A Manufacturing device for sapphire monocrystal |
| 09/21/2011 | CN102191529A Honeycomb ordered titanium dioxide nanotube array film and preparation method thereof |
| 09/21/2011 | CN102191476A Method for preparing sulfur-doped graphene films |
| 09/21/2011 | CN101694012B Wet etching method of barium-strontium titanate and bismuth zinc niobate composite films |
| 09/21/2011 | CN101514494B Preparation method of Beta-Si3N4 single crystal |
| 09/21/2011 | CN101514486B Cu dendritic single crystalline nano material and preparation method thereof |
| 09/21/2011 | CN101498041B Preparation of magnesia crystal whisker |
| 09/20/2011 | US8021914 Manufacture of cadmium mercury telluride |
| 09/20/2011 | US8021483 Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
| 09/20/2011 | US8021482 Method for eliminating the precipitates in a II-IV semiconductor material by annealing |
| 09/20/2011 | US8021480 Microfluidic free interface diffusion techniques |
| 09/19/2011 | CA2733313A1 Graphite electrode |
| 09/15/2011 | WO2011111907A1 Magnetic vertical transfer apparatus for a single crystal silicon ingot growing system |
| 09/15/2011 | WO2011111859A1 Highly insulating/highly stable piezoelectric ltga single crystal, method for producing same, piezoelectric element using said ltga single crystal, and combustion pressure sensor |
| 09/15/2011 | WO2011111647A1 Method for producing nitride compound semiconductor substrate, nitride compound semiconductor substrate and self-supporting nitride compound semiconductor substrate |
| 09/14/2011 | EP2365111A2 Method of manufacturing of a nano-crystal diamond film and devices using the nano-crystal diamond film |
| 09/14/2011 | EP2365110A1 Apparatus and method for producing silicon carbide single crystal |
| 09/14/2011 | EP2364796A2 Casting mold |
| 09/14/2011 | EP2364382A2 Tubular nanostructures, processes of preparing same and devices made therefrom |
| 09/14/2011 | EP2155933B1 Method for producing sic single crystal |
| 09/14/2011 | EP1814149B1 METHOD FOR POLISHING A GaN SUBSTRATE |
| 09/14/2011 | EP1752567B1 Process for producing wafer of silicon carbide single-crystal |
| 09/14/2011 | EP1723086B2 Method of incoporating a mark in cvd diamond |
| 09/14/2011 | CN201971925U 具有光催化特性的ZnO纳米片/纳米线复合结构 ZnO nanosheets / nanowire composite structure with photocatalytic properties |
| 09/14/2011 | CN201971924U 铸锭炉复合材料坩埚托 Composite ingot furnace crucible care |
| 09/14/2011 | CN201971923U 多晶硅铸锭炉的坩埚平台 Polycrystalline silicon ingot furnace crucible platform |
| 09/14/2011 | CN201971921U 多晶硅铸锭炉控温系统 Polycrystalline silicon ingot furnace temperature control system |
| 09/14/2011 | CN201971920U 一种降低铸造多晶硅碳含量的装置 A casting apparatus to reduce the carbon content of the polycrystalline silicon |
| 09/14/2011 | CN1983571B Polycrystalline silicon layer, flat panel display using the polyscrystalline silicon layer and method for fabricating the same |
| 09/14/2011 | CN102187253A Photonic crystal device |
| 09/14/2011 | CN102187020A Indium phosphide substrate manufacturing method, epitaxial wafer manufacturing method, indium phosphide substrate, and epitaxial wafer |
| 09/14/2011 | CN102187019A Silicon carbide single crystal and silicon carbide single crystal wafer |
| 09/14/2011 | CN102187018A Crystal growing apparatus and crystal growing method |
| 09/14/2011 | CN102185098A Preferred orientation type niobate lead-free piezoelectric thick-film material and preparation method thereof |
| 09/14/2011 | CN102185017A Method for preparing solar-battery-level polycrystalline silicon product |
| 09/14/2011 | CN102181939A Method for controlling growing lengths of silicon nanowires |
| 09/14/2011 | CN102181937A Activating method of corrosive liquid for manufacturing solar polycrystalline silicon wool surface |
| 09/14/2011 | CN102181933A Method for synthesizing one-dimensional nano magnesium borate crystal whisker by using concentrated seawater |
| 09/14/2011 | CN102181932A ZnxCd1-xTe fluorescent nano-bar and aqueous phase synthesis method thereof |
| 09/14/2011 | CN102181931A Erbium-doped lutetium silicate laser crystal and preparation method thereof |
| 09/14/2011 | CN102181930A Method for preparing one-dimensional columnar structure calcium-doped lead titanate monocrystal nano-fibers |
| 09/14/2011 | CN102181929A Process for synthesizing TiO2 mesoporous single crystals |
| 09/14/2011 | CN102181928A Method for preparing ZnNi/Ni-ZnO nano-tube through direct current deposition |
| 09/14/2011 | CN102181927A Method for preparing zinc oxide nano-array on flexible substrate at low temperature |
| 09/14/2011 | CN102181926A Polycrystalline silicon ingot doping method and ingot casting equipment for implementing method |
| 09/14/2011 | CN102181925A Growth process and device for growing IC-level silicon single crystal with low Fe content by czochralski method |
| 09/14/2011 | CN102181924A Growth method of graphene and graphene |
| 09/14/2011 | CN102181921A Method for preparing polarity controllable zinc oxide by adopting metal source chemical vapor deposition technology |
| 09/14/2011 | CN102181920A Method and device for preparing zinc cadmium sulfide selenide nanowires with fluorescence changing from ultraviolet to red |
| 09/14/2011 | CN102181919A Method for controlling resistivity of head of Czochralski silicon |
| 09/14/2011 | CN102181825A Seed layer-assisted high performance TiO2-based transparent conductive film and preparation method thereof |
| 09/14/2011 | CN102179249A Manufacturing technology of Co-free FeNi catalyst powder for synthesizing high-grade diamond monocrystalline |
| 09/14/2011 | CN101892504B Method for preparing strontium fluoride or rare-earth doped strontium fluoride film by adopting electrolytic deposition |
| 09/14/2011 | CN101774544B Method for recycling tail gas generated in production of polycrystalline silicon |
| 09/14/2011 | CN101654805B Preparation method of casting polysilicon with large crystal grains in single crystal direction |
| 09/14/2011 | CN101597787B Method for casting nitrogen-doped monocrystalline silicon with controllable nitrogen concentration under nitrogen |
| 09/14/2011 | CN101355013B Process for fabricating a structure for epitaxy without an exclusion zone |
| 09/14/2011 | CN101319387B Preparation method of high-temperature superconductor nano-structured array |
| 09/14/2011 | CN101260566B Organic super crystal lattice material composed of disk-shaped molecule organic semiconductor and preparation method thereof |
| 09/13/2011 | CA2657007C Method and device for producing classified high-purity polycrystalline silicon fragments |
| 09/13/2011 | CA2633284C Novel cocrystalline metallic compounds and electrochemical redox active material employing the same |
| 09/09/2011 | WO2011108706A1 Single crystal substrate, production method for single crystal substrate, production method for single crystal substrate with multilayer film, and device production method |
| 09/09/2011 | WO2011108703A1 Single crystal substrate with multilayer film, production method for single crystal substrate with multilayer film, and device production method |
| 09/09/2011 | WO2011108698A1 Internal reforming substrate for epitaxial growth, internal reforming substrate with multilayer film, semiconductor device, bulk semiconductor substrate, and production methods therefor |
| 09/09/2011 | WO2011108640A1 Crystal growing apparatus, method for manufacturing nitride compound semiconductor crystal, and nitride compound semiconductor crystal |
| 09/09/2011 | WO2011108587A1 Method for affixing silicon carbide seed crystal and process for producing single-crystal silicon carbide |
| 09/09/2011 | WO2011108545A1 Method of manufacturing carbon nanotube, monocrystal substrate for manufacturing carbon nanotube, and carbon nanotube |
| 09/09/2011 | WO2011108519A1 Semiconductor epitaxial substrate |
| 09/09/2011 | WO2011108417A1 Method for manufacturing sapphire single crystal, apparatus for pulling sapphire single crystal, and sapphire single crystal |