| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 05/02/2012 | EP2446070A1 Method for making fancy pale blue or fancy pale blue /green single crystal cvd diamond and product obtained |
| 05/02/2012 | EP2446069A1 Method for treating single crystal cvd diamond and product obtained |
| 05/02/2012 | EP2119815B1 Method for manufacturing self-supporting nitride semiconductor substrate |
| 05/02/2012 | CN202208779U Ingot furnace |
| 05/02/2012 | CN202208778U Device for decreasing warp degree of polycrystalline silicon sheet |
| 05/02/2012 | CN102439695A Relaxation and transfer of strained material layers |
| 05/02/2012 | CN102439204A Methods of making an article of semiconducting material on a mold comprising particles of a semiconducting material |
| 05/02/2012 | CN102438773A Process for producing multicrystalline silicon ingots by the induction method and apparatus for carrying out the same |
| 05/02/2012 | CN102433588A Preparation method of crack-free optical crystal |
| 05/02/2012 | CN102433587A Preparation method of multicomponent large-size rare earth boride LaxCe1-xB6 monocrystalline block cathode material |
| 05/02/2012 | CN102433586A Method for epitaxial growth of wafer-level graphene on 4H/6H-SiC (0001) surface |
| 05/02/2012 | CN102433584A Preparation method of potassium dihydrogen phosphate twin crystal |
| 05/02/2012 | CN102433583A Preparation method of mullite whiskers |
| 05/02/2012 | CN102432634A 2-amino-4-(2'-pyridine)-pyrimidine-2-peroxo vanadium ammonium salt complex, method for cultivating single crystal of 2-amino-4-(2'-pyridine)-pyrimidine-2-peroxo vanadium ammonium salt complex, and application of 2-amino-4-(2'-pyridine)-pyrimidine-2-peroxo vanadium ammonium salt complex |
| 05/02/2012 | CN102432504A Preparation method of alpha-type crystal lattice chlorothalonil |
| 05/02/2012 | CN102071453B Method for preparing high-quality aqueous phase semiconductor nanocrystals by one pot method at room temperature |
| 05/02/2012 | CN102031556B Growing process of polycrystalline cast ingot crystals |
| 05/02/2012 | CN101985774B Method for synthesizing single crystal nano wire array |
| 05/02/2012 | CN101962804B Epitaxial material stress control-based GaN thick film self-separation method |
| 05/02/2012 | CN101914810B Zirconium diboride whisker material and preparation method thereof |
| 05/02/2012 | CN101691302B Method for preparing sheet-shaped alpha-alumina particles |
| 05/02/2012 | CN101680113B Method for producing SiC single crystal |
| 05/02/2012 | CN101519797B Method for pulling silicon core by crystal crushed material and device for applying same |
| 05/02/2012 | CN101400833B Process for producing diamond single crystal with thin film and diamond single crystal with thin film |
| 05/02/2012 | CN101311355B Process for preparing calcium sulphate whiskers from ardealite |
| 05/01/2012 | CA2660386C Process and apparatus for purifying low-grade silicon material |
| 04/26/2012 | WO2012054845A2 Intermediate materials and methods for high-temperature applications |
| 04/26/2012 | WO2012054101A1 Crystal growing system and method thereof |
| 04/26/2012 | WO2012053782A2 Process for growing silicon carbide single crystal and device for the same |
| 04/26/2012 | WO2012053252A1 Composite substrate having silicon carbide substrate |
| 04/26/2012 | WO2012053081A1 Semi-insulating sic crystal, method for manufacturing same, substrate for device, and substrate for ic |
| 04/26/2012 | WO2012052513A1 Method for producing a low dislocation density iii-nitride crystal |
| 04/26/2012 | WO2012031136A3 Silicon single crystal doped with gallium, indium, or aluminum |
| 04/25/2012 | EP2444531A2 Method and apparatus for growing semiconductor crystals with a rigid support and with carbon doping |
| 04/25/2012 | CN202202019U 一种用于铸造法生长硅晶体的热交换台 A method for thermally grown silicon crystal casting exchange station |
| 04/25/2012 | CN202202016U 能够测量熔硅液面与导流筒之间距离的单晶炉热场装置 Capable of measuring single crystal furnace thermal field means the distance between the molten silicon surface and draft tube |
| 04/25/2012 | CN202202014U 具备改进的水冷却结构的坩埚轴 With an improved water-cooled crucible shaft structure |
| 04/25/2012 | CN202202013U 用于单晶炉的外部连续投料机构 External crystal furnace for continuously feeding mechanism |
| 04/25/2012 | CN202199223U 划片机粉尘回收装置 Dicing dust recovery |
| 04/25/2012 | CN1826694B Nanowhiskers with PN junctions and methods of fabricating thereof |
| 04/25/2012 | CN102428216A MOCVD reactor having a ceiling panel coupled locally differently to a heat dissipation member |
| 04/25/2012 | CN102428215A Method of nanostructuring a film or a wafer of material of the metal oxide or semi-conductor type |
| 04/25/2012 | CN102427103A 氮化镓基ⅲ-ⅴ族化合物半导体led外延片及其生长方法以及包括其的led显示装置 GaN-based ⅲ-ⅴ compound semiconductor epitaxial wafer led its growth method and apparatus including led display |
| 04/25/2012 | CN102425876A Helium circulating cooling system |
| 04/25/2012 | CN102425010A 1,2,3,4-丁烷四羧酸锰铁电材料及其制备方法 1,2,3,4-butane tetracarboxylic acid ferromanganese electrical material and its preparation method |
| 04/25/2012 | CN102425009A 一种kdp晶体全方位生长装置 One kind kdp crystal growth apparatus round |
| 04/25/2012 | CN102425008A 制备大晶粒铸锭多晶硅的方法 Preparation of large grain polysilicon ingot method |
| 04/25/2012 | CN102425007A 一种在硅片表面制备银纳米晶体的方法 A method for preparing silver nano-crystal silicon surface in |
| 04/25/2012 | CN102425006A 定向凝固法生长铸锭多晶硅的方法及其热场 The method of directional solidification of polycrystalline silicon ingot growth and thermal fields |
| 04/25/2012 | CN102425005A 多晶硅铸锭炉下炉体定向凝固系统及其铸锭工艺 Under the polycrystalline silicon ingot furnace body ingot directional solidification systems and processes |
| 04/25/2012 | CN102425003A 多晶硅铸锭炉运行中热电偶温度补偿方法、装置和系统 Polycrystalline silicon ingot furnace operation thermocouple temperature compensation method, apparatus and system |
| 04/25/2012 | CN102423743A 多晶硅铸锭用坩埚涂覆机及坩埚涂覆方法 Polycrystalline silicon ingot crucible and crucible coating machine coating method |
| 04/25/2012 | CN102021654B 一种磁性纳米管的制备方法 Preparation method of magnetic nanotubes |
| 04/25/2012 | CN101967679B 一种氧化锌晶须形貌的调控方法 A method of regulating the morphology of zinc oxide whisker |
| 04/25/2012 | CN101962805B 一种磷酸镧或稀土掺杂磷酸镧薄膜的电化学制备方法 An electrochemical method for preparing thin films of lanthanum phosphate or rare earth-doped lanthanum phosphate |
| 04/25/2012 | CN101736404B 硫酸钙晶须与磷酸的联产法 Calcium sulfate whisker generation method with phosphoric acid |
| 04/25/2012 | CN101717994B 一种大面积单畴二维胶体晶体的制备方法 Method for preparing large-area single-domain two-dimensional colloidal crystals |
| 04/25/2012 | CN101608342B 一种处理铌酸锂或钽酸锂晶片的方法 A method of a lithium niobate or lithium tantalate wafer processing |
| 04/25/2012 | CN101514485B 一种低氧含量硅晶体的制备方法及设备 A method and apparatus for preparing a low oxygen content of the silicon crystal |
| 04/25/2012 | CN101064258B 高取向性硅薄膜形成方法、三维半导体器件及其制造方法 The highly oriented silicon film forming method, three-dimensional semiconductor device and its manufacturing method |
| 04/25/2012 | CN101054717B 用于增加多晶硅熔化速率的间歇式加料技术 Increases the melting rate of the polysilicon technique for intermittent feeding |
| 04/25/2012 | CA2755762A1 Method for producing polycrystalline silicon rods |
| 04/24/2012 | US8163403 Epitaxial layers on oxidation-sensitive substrates and method of producing same |
| 04/24/2012 | US8163084 Nanostructure and manufacturing method for same |
| 04/24/2012 | CA2663382C C-plane sapphire method and apparatus |
| 04/19/2012 | WO2012051182A2 Fabrication of single-crystalline graphene arrays |
| 04/19/2012 | WO2012050410A1 Method of purification of silicon |
| 04/19/2012 | WO2012050341A2 Fluidized bed reactor for preparing particulate polycrystalline silicon, and preparation method of polycrystalline silicon using same |
| 04/19/2012 | WO2012049846A1 Langasite-type oxide material, production method for same, and raw material used in production method |
| 04/19/2012 | WO2012049510A1 Heterogrowth |
| 04/19/2012 | WO2012049304A1 Method for fabricating a free-standing group iii nitride substrate |
| 04/19/2012 | WO2012048905A1 Crucible for silicon and crucible arrangement |
| 04/19/2012 | WO2012012457A3 Polycrystalline silicon production |
| 04/19/2012 | WO2011130516A3 Method of making a diamond particle suspension and method of making a polycrystalline diamond article therefrom |
| 04/19/2012 | US20120091471 Lightly doped silicon carbide wafer and use thereof in high power devices |
| 04/19/2012 | DE112006002130B4 Verfahren und Vorrichtung zur Herstellung eines Einkristallblocks aus einer spezifischen Substanz durch dasCzochralski-Verfahren Method and apparatus for producing a single crystal ingot from a specific substance by dasCzochralski method |
| 04/19/2012 | CA2774314A1 Composite substrate having single-crystal silicon carbide substrate |
| 04/18/2012 | EP2441861A1 Device for producing silicon carbide single crystals |
| 04/18/2012 | EP1807872B1 Photovoltaic cell comprising a photovoltaic active semiconductor material |
| 04/18/2012 | CN202193878U 硅芯炉装料快速对中装置 Silicon core furnace charging fast on the device |
| 04/18/2012 | CN202193877U 一种热交换装置 A heat exchange device |
| 04/18/2012 | CN102422388A 碳化硅衬底和半导体器件 A silicon carbide substrate and the semiconductor device |
| 04/18/2012 | CN102422387A Silicon carbide substrate, semiconductor device, and method for manufacturing silicon carbide substrate |
| 04/18/2012 | CN102418150A 一种大腐蚀纹单晶硅碱腐蚀片加工工艺 One kind of large single-crystal silicon etching pattern piece alkaline etching process |
| 04/18/2012 | CN102418148A Titanium dioxide-based polypyrrole jacket nanotube array as well as preparation method and energy storage application thereof |
| 04/18/2012 | CN102418147A 高强度且完全抗氧化的第三代单晶高温合金及制备方法 High strength and completely resistant to oxidation third generation single crystal superalloy and preparation method |
| 04/18/2012 | CN102418146A 一种提高GaN基LED发光效率的外延方法 A luminous efficiency of GaN-based LED epitaxial methods to improve |
| 04/18/2012 | CN102418145A 在图形衬底上生长GaN基LED外延片的方法 On the graphics substrate GaN-based LED epitaxial wafer growth method |
| 04/18/2012 | CN102418144A 一种4英寸c向蓝宝石晶体的制造方法 Method for producing a 4 inches c to sapphire crystal |
| 04/18/2012 | CN102418143A 一种以H<sub>3</sub>PO<sub>4</sub>腐蚀衬底制备自剥离GaN单晶的方法 A to H <sub> 3 </ sub> PO <sub> 4 </ sub> substrate corrosion self-release preparation of GaN single crystal |
| 04/18/2012 | CN102418141A Tungsten crucible double-sleeve hoisting frame |
| 04/18/2012 | CN102418140A 硅熔体连续加注的直拉硅单晶生长炉及其方法 Continuous filling of the silicon melt Czochralski silicon single crystal growth furnace and method |
| 04/18/2012 | CN102418139A 一种水热辅助液相自组装制备（311）取向生长硫化钐薄膜的方法 A water heat-assisted self-assembly preparation phase (311) oriented film growth method samarium sulfide |
| 04/18/2012 | CN102416280A 多晶硅废气焚烧的分离除尘包装系统 Incineration of waste gas dust separation polysilicon packaging system |
| 04/18/2012 | CN102061498B 一种场发射用注射器状ZnO纳米结构阵列的制备方法 Preparation method for transmitting a syringe-like ZnO nanostructure arrays with a field |
| 04/18/2012 | CN101974778B 硅酸钡钛晶体的制备方法 Preparation of barium titanium silicate crystals |
| 04/18/2012 | CN101949059B 光伏多晶硅铸锭炉炉底多轴同步提升装置 Photovoltaic polycrystalline silicon ingot furnace hearth multiaxis synchronous lifting device |
| 04/18/2012 | CN101792932B 一种由磷石膏制备超微细硫酸钙晶须的方法 An ultra-fine calcium sulfate whiskers prepared by the method of phosphogypsum |
| 04/18/2012 | CN101311383B 一种半导体纳米晶的制备方法 A semiconductor nanocrystals prepared |
| 04/18/2012 | CA2774683A1 Combined substrate having silicon carbide substrate |