| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 01/18/2012 | CN101694009B Method for auxiliary synthesis of potassium titanate crystal whisker by using high-energy ball mill method |
| 01/18/2012 | CN101643940B Manufacturing method of hexagonal silicon slice |
| 01/17/2012 | US8097524 Lightly doped silicon carbide wafer and use thereof in high power devices |
| 01/17/2012 | US8097305 Method for producing a thin-film chalcopyrite compound |
| 01/12/2012 | WO2012005237A1 Silicon carbide substrate, semiconductor device, and soi wafer |
| 01/11/2012 | EP2405038A1 Crucible, apparatus, and method for producing silicon carbide single crystals |
| 01/11/2012 | EP2405037A1 Nanoparticles |
| 01/11/2012 | EP2168934B1 Sintered silicon wafer |
| 01/11/2012 | EP2103721B1 METHOD FOR PRODUCTION OF GaN CRYSTAL AND APPARATUS FOR PRODUCTION OF GaN CRYSTAL |
| 01/11/2012 | EP1802553B1 Method for increasing the conversion of group III metals to group III nitrides in a fused metal containing group III elements |
| 01/11/2012 | CN202107796U Quartz ceramic crucible for polycrystalline silicon ingot casting |
| 01/11/2012 | CN202107795U Polysilicon ingot casting furnace |
| 01/11/2012 | CN102317512A Method for growing group 3b nitride crystal, and group 3b nitride crystal |
| 01/11/2012 | CN102317511A Quartz glass crucible for pulling single-crystal silicon and process for producing single-crystal silicon |
| 01/11/2012 | CN102312293A Method for growing large size Ta2O5 single crystal by using floating zone method |
| 01/11/2012 | CN102312292A Doped Czochralski monocrystalline silicon |
| 01/11/2012 | CN102312291A Doped casting monocrystalline silicon and preparation method |
| 01/11/2012 | CN102312290A Doped casting polycrystalline silicon and preparation method |
| 01/11/2012 | CN102312289A Device for secondary charging of polycrystalline ingot furnace |
| 01/11/2012 | CN102312288A Self-tightening type seed crystal chuck |
| 01/11/2012 | CN102312286A Vitreous silica crucible and method of manufacturing the same, and method of manufacturing silicon ingot |
| 01/11/2012 | CN102312284A Thermal field of straight pulling silicon single crystal furnace with a plurality of exhaust pipelines uniformly and downward distributed |
| 01/11/2012 | CN102312283A Single crystal furnace having double auxiliary furnace chamber structure and production method for monocrystalline silicon |
| 01/11/2012 | CN102312282A Two-stage feeding device for polysilicon ingot casting |
| 01/11/2012 | CN102312278A Method for preparing mullite whisker by use of gangue |
| 01/11/2012 | CN102312192A Seed crystal layer-assisting surface texturing zinc oxide transparent conductive film and preparation method thereof |
| 01/11/2012 | CN102312190A Methods for sputtering a resistive transparent thin film for use in cadmium telluride based photovoltaic devices |
| 01/11/2012 | CN102311132A Rod-like one-dimensional polycrystalline gamma-Al2O3 nanocrystal grains and preparation method thereof |
| 01/11/2012 | CN101885511B Method for preparing monoclinic lead tungstate nano belt crystal material |
| 01/11/2012 | CN101868848B Method for fabricating p-type gallium nitride-based semiconductor, method for fabricating nitride-based semiconductor element, and method for fabricating epitaxial wafer |
| 01/11/2012 | CN101798069B Method for preparing rope-form tellurium nanocrystals |
| 01/11/2012 | CN101760772B Reaction unit for ammonia thermal growth of nitride |
| 01/11/2012 | CN101694010B Preparation method of layered nanostructured InSb pyroelectric material |
| 01/11/2012 | CN101665981B Preparation method of single-domain Gd-Ba-Cu-O superconducting block |
| 01/11/2012 | CN101665980B Infiltration method for preparing single-domain Gd-Ba-Cu-O superconducting block |
| 01/11/2012 | CN101665979B KCl crystalline material containing CuCl and preparation method thereof |
| 01/11/2012 | CN101560695B Method for preparing binary magnetic oxide single crystal nanoplate |
| 01/11/2012 | CN101555624B Synthetic method for uniform mono-dispersion Alpha-Fe2O3 single chip |
| 01/10/2012 | US8093628 Fluidic nanotubes and devices |
| 01/10/2012 | CA2517239C Process for reloading a single-crystal or gradient solidification metal part |
| 01/05/2012 | WO2012003304A1 Growth of large aluminum nitride single crystals with thermal-gradient control |
| 01/05/2012 | WO2012002795A1 A process for producing silicon carbide (sic) nanowires on a silicon substrate |
| 01/05/2012 | WO2012002545A1 Device for producing aluminum nitride crystal grains, method for producing aluminum nitride crystal grains, and aluminum nitride crystal grains |
| 01/05/2012 | WO2012002130A1 Bna crystal |
| 01/05/2012 | WO2012002089A1 Method for producing sapphire single crystal, sapphire substrate, and semiconductor light emitting element |
| 01/05/2012 | WO2012000986A1 Cutting tool, in particular cutting wheels, and method for producing the same using an inclined laser beam |
| 01/05/2012 | WO2012000854A1 Negative electrode material for lithium-ion batteries |
| 01/05/2012 | WO2012000493A1 Device and method for monitoring crystallization |
| 01/05/2012 | DE102010025842A1 Vorrichtung und Verfahren zur Kontrolle der Kristallisation Apparatus and method for controlling the crystallization |
| 01/04/2012 | EP2402486A1 Nitride crystal and method for producing the same |
| 01/04/2012 | EP2401768A2 Tiled substrates for deposition and epitaxial lift off processes |
| 01/04/2012 | EP2401231A1 Method for the production of solar grade silicon |
| 01/04/2012 | EP2215290B1 Reduction of air pockets in silicon crystals by avoiding the introduction of nearly insoluble gases into the melt |
| 01/04/2012 | EP1734158B1 Gallium nitride single crystal growing method |
| 01/04/2012 | CN202099413U Single crystal bar |
| 01/04/2012 | CN202099412U Polycrystal ingot furnace and heat exchange device thereof |
| 01/04/2012 | CN202099408U Biquartz crucible device used for producing czochralski silicon single crystal |
| 01/04/2012 | CN202099407U Crystal growth furnace structure for sapphire crystal growth |
| 01/04/2012 | CN202099405U Upper heat screen for large-sized sapphire silicon crystal growth furnace |
| 01/04/2012 | CN102308370A Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer |
| 01/04/2012 | CN102308032A GaN substrate, method for manufacturing GaN substrate, method for manufacturing GaN layer bonded substrate and method for manufacturing semiconductor device |
| 01/04/2012 | CN102308031A Crucible for producing single-crystal silicon carbide, and production apparatus and production method for producing single-crystal silicon carbide |
| 01/04/2012 | CN102304763A Continuous high temperature chemical vapor deposition (HTCVD) method silicon carbide crystal growing device |
| 01/04/2012 | CN102304762A Preparation method of potassium hexatitanate whiskers |
| 01/04/2012 | CN102304761A Preparation method for non-close-packed opal photonic crystal |
| 01/04/2012 | CN102304760A Composite substrate, preparation method of composite substrate and method for preparing single crystal thick film through hetero-epitaxy |
| 01/04/2012 | CN102304752A Crucible structure for growth of sapphire crystals |
| 01/04/2012 | CN102304751A Composite crucible for growth of sapphire crystals |
| 01/04/2012 | CN102304750A Method for synthesizing mullite whiskers |
| 01/04/2012 | CN102303852A Method for producing phosphoric acid and gypsum whiskers by wet process |
| 01/04/2012 | CN101787564B Synthesis method of platy-ZnSe fluorescent nano monocrystal |
| 01/04/2012 | CN101768778B Self-activation crystal neodymium phosphate and preparation method thereof |
| 01/04/2012 | CN101684569B Method and device for growing potassium dihydrogen phosphate single crystal |
| 01/04/2012 | CN101624725B Molecular beam epitaxial method for growing non-antiphase domain gallium arsenide film on germanium substrate |
| 01/04/2012 | CN101383279B HVPE reactor for preparing nitride semiconductor substrate |
| 01/04/2012 | CN101189367B Composite comprising array of acicular crystal, process for producing the same, photoelectric conversion element, luminescent element, and capacitor |
| 01/04/2012 | CN101128626B 悬浮体的制备 Preparation of the suspension |
| 01/04/2012 | CN101052753B Method for manufacturing porous silica crystal |
| 01/03/2012 | US8089211 Plasma display panel and method for manufacturing the same |
| 01/03/2012 | US8088222 Method, system, and apparatus for the growth of on-axis SiC and similar semiconductor materials |
| 01/03/2012 | US8088221 Method and system for diamond deposition using a liquid-solvent carbon-tranfser mechanism |
| 01/03/2012 | US8088219 Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it |
| 12/29/2011 | WO2011160977A1 Method for slicing a substrate wafer |
| 12/29/2011 | WO2011160189A1 METHOD OF SCREENING FOR INHIBITORS OF sPLA2-IIA |
| 12/28/2011 | EP2400532A2 Diamond semiconductor element and process for producing the same |
| 12/28/2011 | EP2400531A2 Diamond semiconductor element and process for producing the same |
| 12/28/2011 | EP2400530A2 Diamond semiconductor element and process for producing the same |
| 12/28/2011 | EP2400527A1 Silicon carbide substrate and method for production thereof |
| 12/28/2011 | EP2400046A1 Method and apparatus for growing submicron group III nitride structures utilizing HVPE techniques |
| 12/28/2011 | EP2400045A2 Vitreous silica crucible and method of manufacturing the same, and method of manufacturing silicon ingot |
| 12/28/2011 | EP2399733A2 Preparation of nanocrystallines |
| 12/28/2011 | EP1679393B1 Piezoelectric single crystal, piezoelectric single crystal element and method for preparation thereof |
| 12/28/2011 | CN202090107U 一种晶体材料加工炉的门扣结构 Crystal structure of a door buckle material processing furnaces |
| 12/28/2011 | CN202090104U 导电连接构件及多晶硅铸锭炉侧面加热器 Conductive connecting member and the side of polycrystalline silicon ingot furnace heater |
| 12/28/2011 | CN202090103U 硅芯炉 Silicon Furnace |
| 12/28/2011 | CN202090102U 一种多晶硅提纯铸锭炉升降机构 One kind of purified polysilicon ingot furnace lifting mechanism |
| 12/28/2011 | CN202090101U 多晶硅提纯铸锭炉真空机组 Purified polysilicon ingot furnace vacuum unit |
| 12/28/2011 | CN202090095U 单一组分氧化物晶体生长用坩埚 Single component oxide crystal growth crucible |
| 12/28/2011 | CN202090092U 带控温籽晶装置的单晶铸锭炉 With a seed crystal ingot furnace temperature control device |
| 12/28/2011 | CN1995486B 生产单晶硅的方法 Production of silicon method |