Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
03/2012
03/14/2012CN102373508A Non-drawing production technology of monocrystalline silicon
03/14/2012CN102373507A Method for hydrothermally synthesizing Bi2WO6 material under assistance of imidazole ionic liquids
03/14/2012CN102373506A Method for epitaxially growing graphene on SiC substrate, graphene and graphene device
03/14/2012CN102373505A Microwave preparation method of silicon carbide nano wire
03/14/2012CN102373504A Silicon single crystal production method
03/14/2012CN102373503A Coated quartz crucible for polysilicon cast ingots
03/14/2012CN102373500A Growth method for solar grade monocrystaline silicon, and equipment thereof
03/14/2012CN101460399B 纯化硅的方法 Method for purifying silicon
03/13/2012US8133320 Diamond heat sink in a laser
03/08/2012WO2012031148A2 High throughput sapphire core production
03/08/2012WO2012031136A2 Silicon single crystal doped with gallium, indium, or aluminum
03/08/2012WO2012029952A1 Method for producing silicon carbide single crystal, silicon carbide single crystal, and silicon carbide single crystal substrate
03/08/2012WO2012029864A1 Method for producing silicon carbide single crystal
03/08/2012WO2012029656A1 Method for producing non-linear optical crystals, non-linear optical crystals, wavelength-converting optical element, and ultraviolet radiation device
03/08/2012WO2012029333A1 Production method for silicon thin film, production method for silicon thin-film solar cell, silicon thin film, and silicon thin-film solar cell
03/08/2012WO2012029216A1 Method for manufacturing compound semiconductor
03/08/2012WO2012028858A1 Electroactive material
03/08/2012WO2012028857A1 Porous electroactive material
03/08/2012WO2012028724A1 Process to produce atomically thin crystals and films
03/08/2012WO2012028314A1 Method for producing a measuring tip for a scanning probe microscope and measuring probe having a measuring tip produced according to said method
03/08/2012DE10393635B4 Verfahren zur Herstellung eines Siliziumwafers A method for producing a silicon wafer
03/08/2012CA2810331A1 Electroactive material
03/08/2012CA2810123A1 Porous electroactive material
03/08/2012CA2806912A1 Metal substrates having carbon nanotubes grown thereon and methods for production thereof
03/08/2012CA2806908A1 Metal substrates having carbon nanotubes grown thereon and processes for production thereof
03/07/2012EP2426702A1 Method of deposition of chemical compound semiconductor and device
03/07/2012EP2426238A1 METHOD FOR FABRICATING SiC SUBSTRATE
03/07/2012EP2426084A2 Process for production of polycrystalline silicon
03/07/2012EP2425454A1 Quality control process for umg-si feedstock
03/07/2012EP2179078B1 Method and system for forming a silicon ingot using a low-grade silicon feedstock
03/07/2012EP1541721B1 Method of producing silicon monocrystal
03/07/2012EP1522611B1 Diamond composite substrate
03/07/2012CN202157146U 去除多晶或单晶硅废料中可燃物质的装置 Means polycrystalline or monocrystalline silicon scrap removal of combustible material
03/07/2012CN202157145U 硅芯母料用盛载装置 Silicon masterbatch, contained device with
03/07/2012CN202157144U 碳化硅籽晶粘接自动控制装置 Bonding the silicon carbide seed crystal automatic control device
03/07/2012CN202157142U 一种石英坩埚 A silica crucible
03/07/2012CN1946882B Single crystals and methods for fabricating same
03/07/2012CN102369612A Pyroelectric material - radiation sensor - method of making a radiation sensor - use of lithium tantalate and lithium niobate
03/07/2012CN102369301A Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon
03/07/2012CN102369158A Method for producing high purity silicon
03/07/2012CN102367589A Preparation method of binary gold nanoparticle Janus assembly
03/07/2012CN102367588A Straight-pull eight-inch silicon single crystal thermal field and production method of eight-inch silicon single crystal
03/07/2012CN102367572A Sintering-free spraying method of polysilicon ingot crucible
03/07/2012CN101660207B Method for synthesizing gallium phosphide polycrystal
03/07/2012CN101530923B Method for preparing Fe-Ni-Pt alloy nanorod
03/07/2012CN101514489B Fluoborate and crystal containing rare earth ions, growing method and application of crystal
03/06/2012US8129747 Semiconductor heterostructures having reduced dislocation pile-ups and related methods
03/06/2012CA2749641A1 Process for producing polycrystalline silicon
03/01/2012WO2012027347A1 Crystal growth apparatus with ceramic coating and methods for preventing molten material breach in a crystal growth apparatus
03/01/2012WO2012027031A1 Eddy current thickness measurement apparatus
03/01/2012WO2012026799A1 An apparatus and method for rapid rate of titanium dioxide (tio2) nanotubes arrays formation
03/01/2012WO2012026585A1 Fluoride crystal, scintillator for detection of radioactive ray, and radioactive ray detector
03/01/2012WO2012026062A1 Apparatus and method for manufacturing semiconductor single crystal
03/01/2012WO2011160129A3 Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
03/01/2012WO2011155858A3 Method of graphene manufacturing
03/01/2012WO2011108830A3 Single crystal cooling apparatus and single crystal grower including the same
03/01/2012CA2749635A1 Process for production of polycrystalline silicon
02/2012
02/29/2012EP2423356A1 Process for producing indium-phosphorus substrate, process for producing epitaxial wafer, indium-phosphorus substrate, and epitaxial wafer
02/29/2012EP2423355A1 Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrate
02/29/2012EP2423159A1 Methods of forming alpha and beta tantalum films with controlled and new microstructures
02/29/2012EP2423158A1 Methods of forming alpha and beta tantalum films with controlled and new microstructures
02/29/2012EP1508632B1 METHOD FOR PREPARATION OF Cl DOPED CdTe SINGLE CRYSTAL
02/29/2012CN202152381U 籽晶垫圈 Seed washer
02/29/2012CN202152380U 一种坩埚 One kind of crucible
02/29/2012CN1956921B Cooled lump from molten silicon and process for producing the same
02/29/2012CN102363898A Sapphire crucible for growing garnet type single crystal
02/29/2012CN102363897A Pyrolytic boron nitride (PBN) crucible and method for growing gallium arsenide crystal by using same
02/29/2012CN101864591B Improved 800type silicon monocrystalline furnace thermal field system
02/29/2012CN101736400B Method for growing GaN-based luminous crystal film by metal organic chemical vapor deposition
02/28/2012US8124179 Thin films prepared with gas phase deposition technique
02/28/2012US8123859 Method and apparatus for producing large, single-crystals of aluminum nitride
02/28/2012US8123857 Method for producing p-type SiC semiconductor single crystal
02/25/2012CA2746117A1 Polycrystalline silicon and method for production thereof
02/23/2012WO2012023568A1 Boride having chemical composition na-si-b, and polycrystalline reaction sintered product of boride and process for production thereof
02/23/2012WO2012023233A1 Heat treatment method for wafer, method for producing silicon wafer, silicon wafer, and heat treatment apparatus
02/23/2012WO2012023165A1 Electromagnetic casting device for silicon
02/23/2012WO2012021977A1 Rare-earth-doped aluminum-gallium-oxide films in the corundum-phase and related methods
02/23/2012WO2011130023A3 Method of preparing polycrystalline diamond from derivatized nanodiamond
02/23/2012DE102009051010B4 Vorrichtung zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat An apparatus for producing a single crystal of silicon by remelting of granules
02/22/2012EP2421029A1 Anneal wafer, method for manufacturing anneal wafer, and method for manufacturing device
02/22/2012EP2421028A1 Method for producing silicon epitaxial wafer
02/22/2012EP2420599A1 Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device
02/22/2012EP2420598A1 Apparatus for producing silicon carbide single crystal and method for producing silicon carbide single crystal
02/22/2012EP2420597A1 Lid for fused quartz crucible, fused quartz crucible and method for handling same
02/22/2012EP2419944A1 Thermoelectric device having a variable cross-section connecting structure
02/22/2012EP2419552A1 Reaction chamber of an epitaxial reactor and reactor that uses said chamber
02/22/2012EP2419380A1 Method and apparatus for purifying a silicon feedstock
02/22/2012EP2122015B1 Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate
02/22/2012EP2083935B1 Method for epitaxial deposition of a monocrystalline Group III-V semiconductor material
02/22/2012EP1491662B1 METHOD FOR PREPARING SiC CRYSTAL
02/22/2012CN202148365U 直拉法单晶硅制备中具有二次投料装置的单晶炉 Preparation Czochralski single crystal silicon single crystal furnace having a secondary feeding device
02/22/2012CN102362017A Silicon wafer and method of manufacturing same
02/22/2012CN102362016A Seed layers and process of manufacturing seed layers
02/22/2012CN102358955A Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate
02/22/2012CN102358954A Method for growing CaxBa1-xNb2O6 series crystals
02/22/2012CN102358953A Crucible able to reduce crucible-adhesion and its preparation method
02/22/2012CN102358951A Thermal system and technology for producing float zone doped single crystal silicon having size phi of 6 inches
02/22/2012CN102358950A Preparation method of cadmium tungstate monocrystal nanoribbon
02/22/2012CN102357654A Method and device for directionally solidifying liquid/solid interface based on ultrasonic wave modulation
02/22/2012CN101802979B 化合物半导体衬底、化合物半导体衬底的制造方法以及半导体器件 A compound semiconductor substrate, a method of manufacturing a compound semiconductor substrate and a semiconductor device
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