| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 09/09/2011 | WO2011108356A1 Method for producing silicon carbide crystal, silicon carbide crystal, and device for producing silicon carbide crystal |
| 09/09/2011 | WO2011108137A1 Method for producing silicon carbide substrate |
| 09/09/2011 | CA2765856A1 Production method of silicon carbide crystal, silicon carbide crystal, and production device of silicon carbide crystal |
| 09/09/2011 | CA2765310A1 Method for manufacturing silicon carbide substrate |
| 09/08/2011 | US20110215440 Method of Manufacturing III Nitride Crystal, III Nitride Crystal Substrate, and Semiconductor Device |
| 09/07/2011 | EP2363891A2 Nanowires-based transparent conductors |
| 09/07/2011 | EP2363515A1 Process for the production of a crystallised semiconductor material |
| 09/07/2011 | EP1783098B1 Cooled lump from molten silicon and process for producing the same |
| 09/07/2011 | CN201962424U 一种蓝宝石单晶炉 One kind of sapphire crystal furnace |
| 09/07/2011 | CN201962419U 一种蓝宝石单晶炉 One kind of sapphire crystal furnace |
| 09/07/2011 | CN201962418U 一种蓝宝石单晶炉 One kind of sapphire crystal furnace |
| 09/07/2011 | CN201962417U 多晶硅铸锭炉下炉腔单丝杠升降装置 Under the polycrystalline silicon ingot furnace chamber single-screw lifting device |
| 09/07/2011 | CN201962416U 晶硅铸锭炉热场热门控制装置 Polycrystalline silicon ingot furnace hot thermal field control devices |
| 09/07/2011 | CN201962414U 一种适于18英寸太阳能级硅单晶生长的热场装置 One kind suitable for solar-grade silicon crystal growth 18 inches thermal field devices |
| 09/07/2011 | CN201962411U 能同时拉制七根硅芯的高频感应加热器 Simultaneously drawn seven silicon core of high-frequency induction heater |
| 09/07/2011 | CN201962410U 一种硅棒生产用石墨软毡 A silicone soft felt graphite rod production |
| 09/07/2011 | CN201962409U 一种拉硅棒的导流筒 One kind of pull the silicon rod guide tube |
| 09/07/2011 | CN201962407U 直拉硅单晶炉的复投料装置 Czochralski silicon single crystal furnace complex feeding apparatus |
| 09/07/2011 | CN201962406U 一种双开拉板式散热的感应熔炼多晶硅铸锭炉 A two open pull plate heat induction melting polycrystalline silicon ingot furnace |
| 09/07/2011 | CN201962405U 一种底部散热的感应熔炼多晶硅铸锭炉 One kind of bottom heat induction melting polycrystalline silicon ingot furnace |
| 09/07/2011 | CN201962404U 一种蓝宝石单晶炉 One kind of sapphire crystal furnace |
| 09/07/2011 | CN201962403U 移动式出料多晶硅铸锭炉 Mobile discharge polycrystalline silicon ingot furnace |
| 09/07/2011 | CN201962402U 一种多晶硅铸锭用石英坩埚 One kind of polysilicon ingots quartz crucible |
| 09/07/2011 | CN102177095A Surface functionalised nanoparticles |
| 09/07/2011 | CN102174713A Group iii-v nitride-based semiconductor substrate, its manufacturing method, and group iii-v nitride-based semiconductor |
| 09/07/2011 | CN102174712A (al, in, ga)n substrate, its manufacturing method, microelectronic or opto-electronic device product |
| 09/07/2011 | CN102174711A Method using high thermal stability film as MTG (melt textured growth) seed crystal to prepare high temperature superconducting material |
| 09/07/2011 | CN102174710A Semiconductor wafers of silicon and method for their production |
| 09/07/2011 | CN102174709A Three-dimensional metallic nickel nano tapered body array structure and preparation method thereof |
| 09/07/2011 | CN102174708A Epitaxial growth of compound nitride semiconductor structures |
| 09/07/2011 | CN102174706A Semiconductor sequence body |
| 09/07/2011 | CN101624187B Polysilicon growth ingot furnace |
| 09/07/2011 | CN101613885B ZnGeP2 crystal corrosive and corrosion method |
| 09/07/2011 | CN101457396B Zinc oxide nano awl and preparation method thereof |
| 09/07/2011 | CN101392405B High precision temperature control method and control system in germanium single crystal growth |
| 09/06/2011 | US8013321 Composite comprising array of needle-like crystal, method for producing the same, photovoltaic conversion element, light emitting element, and capacitor |
| 09/06/2011 | US8012882 Method of manufacturing nitride substrate for semiconductors |
| 09/06/2011 | US8012256 Method of fabricating a quasi-substrate wafer and semiconductor body fabricated using such a quasi-substrate wafer |
| 09/06/2011 | CA2496710C Single crystal diamond |
| 09/01/2011 | WO2011105538A1 Method for manufacturing solar cell using silicon powder |
| 09/01/2011 | WO2011105123A1 Shielding member and monocrystal growth device provided therewith |
| 09/01/2011 | WO2011105122A1 Component-adjustment member and monocrystal growth device provided therewith |
| 09/01/2011 | WO2011104796A1 Polycrystalline silicon for solar cell |
| 09/01/2011 | WO2011104795A1 多結晶シリコンウェーハpolycrystalline silicon wafer |
| 09/01/2011 | WO2011104235A1 Devices and method for precipitating a layer on a substrate |
| 09/01/2011 | WO2011103740A1 Single crystal pulling furnace |
| 08/31/2011 | EP2154273B1 Method for production of ultraviolet light-emitting hexagonal boron nitride crystal |
| 08/31/2011 | EP1371117B1 High repetition rate excimer laser system |
| 08/31/2011 | CN201952523U 单晶炉用石墨坩埚 Crystal furnace with a graphite crucible |
| 08/31/2011 | CN201952521U 同时拉制五根硅芯的高频感应加热器 Meanwhile drawn five silicon core of high-frequency induction heater |
| 08/31/2011 | CN201952238U 多晶硅还原炉 Polysilicon reduction furnace |
| 08/31/2011 | CN102171787A Silicon carbide substrate and method for production thereof |
| 08/31/2011 | CN102171388A Lid for fused quartz crucible, fused quartz crucible and method for handling same |
| 08/31/2011 | CN102170946A Method of loading a crystallization device |
| 08/31/2011 | CN102168314A Internal gettering process of Czochralski silicon wafer |
| 08/31/2011 | CN102168313A Gas phase annealing modification method for tellurium/zinc/cadmium crystal |
| 08/31/2011 | CN102168311A Re metal wire prepared by NiAl-Re eutectic and preparation method of the Re metal wire |
| 08/31/2011 | CN102168310A Organic-inorganic hybrid third-order nonlinear optical crystal material with functions of reverse saturable absorption and self-focusing under action of picosecond pulse laser and synthesis method thereof |
| 08/31/2011 | CN102168309A Method for preparing p-type IIB-VIA family quasi-one-dimensional semiconductor nano material by chemical vapor-deposition in-situ doping |
| 08/31/2011 | CN102168308A Method for preparing Ag-Pb-Sb-Te-Se thermoelectric material |
| 08/31/2011 | CN102168307A Method for growing cerium-yttrium-aluminum garnet crystal |
| 08/31/2011 | CN102168306A Preparation method of silver adsorbed zinc oxide nanocrystals |
| 08/31/2011 | CN102168305A Synthesis method of phosphorus-silicon-cadmium polycrystal material |
| 08/31/2011 | CN102168303A Method for preparing crystallization rate of monocrystal silicon 110 |
| 08/31/2011 | CN102168302A Double-quartz-crucible device and method for producing czochralski silicon single crystal |
| 08/31/2011 | CN102168300A Thermal system for preparing heavily-doped silicon single crystal |
| 08/31/2011 | CN102168299A Method for growing phosphorus-silicon-cadmium single crystal |
| 08/31/2011 | CN102166643A Method for preventing monocrystal blades from having mixed crystal defects |
| 08/31/2011 | CN101864592B Ferroelectric metal hetero-junction based memristor and preparation method thereof |
| 08/31/2011 | CN101717088B Method for efficiently producing polycrystalline silicon |
| 08/31/2011 | CN101643938B Method for preparing submicron grade square pipe-shaped Sb2Se3 |
| 08/31/2011 | CN101591804B Method and equipment for high-temperature liquid phase heating crystallization |
| 08/31/2011 | CN101575735B Pyridine-2,4,6-triformate manganese ferro-electrical functional material and preparation method thereof |
| 08/31/2011 | CN101476152B Preparation of single crystal ZnSe/Ge heterojunction nano-wire |
| 08/31/2011 | CN101469449B Method for preparing potassium titanium oxide phosphate crystal by liquid phase coprecipitation synthesis of growth material |
| 08/31/2011 | CN101435109B Growth method for fluxing medium of boron phosphate single crystal |
| 08/31/2011 | CN101381891B Method for preparing MgZnO single crystal film |
| 08/31/2011 | CN101311351B Polycrystalline silicon rod for zone refining and a process for the production thereof |
| 08/31/2011 | CN101230485B Growing method for aluminized optical crystal removing ultraviolet absorption |
| 08/31/2011 | CN101117730B Multi-stage orderedly arranged ZSM-5 nano rod bundle and preparation method thereof |
| 08/30/2011 | US8008165 Nitride semiconductor wafer and method of processing nitride semiconductor wafer |
| 08/25/2011 | WO2011102627A2 SINGLE CRYSTAL ZnMgAlO THIN FILM FOR ULTRAVIOLET RAYS, WHICH IS LATTICE MATCHED TO ZnO, AND PREPARATION METHOD THEREOF |
| 08/25/2011 | WO2011102474A1 Single crystal diamond movable structure and manufacturing method thereof |
| 08/25/2011 | WO2011102045A1 Epitaxial substrate and method for producing same |
| 08/25/2011 | WO2011102044A1 Epitaxial substrate and method for producing same |
| 08/25/2011 | WO2011101727A1 Method of producing silicon carbide single crystal |
| 08/25/2011 | WO2011100879A1 Monocrystalline silicon material co-doped with gallium and indium or co-doped with gallium, indium and germanium for solar batteries and manufacturing method thereof |
| 08/25/2011 | US20110204532 Fabrication process for single-crystal optical devices |
| 08/25/2011 | US20110204329 NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES |
| 08/25/2011 | DE102011004247A1 Verfahren zur Herstellung eines Siliziumkarbid-Substrats A method for producing a silicon carbide substrate |
| 08/24/2011 | EP2360298A2 Method for depositing a semiconductor nanowire |
| 08/24/2011 | EP2360297A2 Vapor deposition system, method of manufacturing light emitting device and light emitting device |
| 08/24/2011 | EP2360289A1 Device and method for deposing a layer composed of at least two components on a substrate |
| 08/24/2011 | EP1088787B1 Process for producing metal oxide, target comprising the metal oxide for forming thin metal oxide film, process for producing the same, and process for producing thin metal oxide film |
| 08/24/2011 | CN201942789U 一种用于生产太阳能级硅单晶的籽晶夹持装置 A seed holding means for the production of solar grade silicon single crystals |
| 08/24/2011 | CN201942785U 用于生产太阳能用硅单晶的氩气流量自动调节装置 For the production of monocrystalline silicon solar argon flow with automatic adjustment device |
| 08/24/2011 | CN201942784U 一种适于直拉法中20英寸硅单晶生长的热场装置 One kind suitable for Czochralski silicon crystal growth in 20 inches of thermal field devices |
| 08/24/2011 | CN201942781U 单晶炉中三瓣埚 Three single-crystal furnace crucible |
| 08/24/2011 | CN201942778U 多温区蓝宝石单晶生长炉 Multi-temperature sapphire single crystal growth furnace |
| 08/24/2011 | CN102165107A Single crystal scintillator material, method for producing same, radiation detector and PET system |