| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 08/24/2011 | CN102163664A Method of treating a silicon carbide substrate for improved epitaxial deposition and resulting structure and device |
| 08/24/2011 | CN102163650A Growth reactor for spherical semiconductor photovoltaic device |
| 08/24/2011 | CN102162137A High quality strain Ge/SiGe super-lattice structure and preparation method thereof |
| 08/24/2011 | CN102162136A Method for quick preparation of large-area two-dimensional colloidal crystal |
| 08/24/2011 | CN102162135A Preparation method of ZnS/Si nuclear-shell nanowires or nanobelts and polycrystal Si tubes |
| 08/24/2011 | CN102162134A Method of manufacturing silicon carbide substrate |
| 08/24/2011 | CN102162133A Zirconium, erbium and ytterbium-doped lithium niobate crystal and preparation method thereof |
| 08/24/2011 | CN102162132A Method for inducing and separating out orientation controllable lithium niobate single crystal in glass by using femtosecond laser |
| 08/24/2011 | CN102162131A Method for growing p-type ZnMgO crystal film by doping Ag |
| 08/24/2011 | CN102162130A Preparation method of sapphire monocrystalline |
| 08/24/2011 | CN102162129A Method for preparing p-type zinc oxide nano rod array |
| 08/24/2011 | CN102162128A Preparation method of Sn-doped ZnO nanocrystalline |
| 08/24/2011 | CN102162127A Method for preparing rutile single crystal superfine titanium dioxide nano wire array grown vertical to substrate |
| 08/24/2011 | CN102162126A Method for preparing BiOCl monocrystalline nano-chip |
| 08/24/2011 | CN102162125A Thermal field structure of polysilicon ingot casting furnace |
| 08/24/2011 | CN102162124A Method for improving axial resistivity uniformity of single crystal with heavily doped Ar |
| 08/24/2011 | CN102162121A Method for preparing organic polyhedron micro-nano crystal with controllable shape and size |
| 08/24/2011 | CN102162116A Growing method and application of semi-metallic titanium dioxide nanotube array film |
| 08/24/2011 | CN102161564A Double-wall quartz crucible for growth of gallium arsenide crystals and preparation method thereof |
| 08/24/2011 | CN102161107A Diamond coating tool with excellent anti-chipping property |
| 08/24/2011 | CN101633503B Double-layer air-guide heat insulation shield of polysilicon hydriding furnace |
| 08/24/2011 | CN101514492B Large size potassium strontium borate nonlinear optical crystal, preparation and use thereof |
| 08/24/2011 | CN101396632B Multi-stage absorption, regeneration and purification method of polysilicon tail gas |
| 08/24/2011 | CN101372760B Preparation of glowing oxygen doped gallium arsenide polycrystalline film |
| 08/23/2011 | US8002892 Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device |
| 08/23/2011 | CA2625521C System, method, and apparatus for enhancing the durability of earth-boring bits with carbide materials |
| 08/22/2011 | CA2727105A1 Improved low sulfur nickel-base single crystal superalloy with ppm additions of lanthanum and yttrium |
| 08/18/2011 | WO2011099893A1 Inorganic scintillating material, crystal scintillator and radiation detector |
| 08/18/2011 | WO2011099680A1 Single crystal cooler and single crystal grower including the same |
| 08/18/2011 | WO2011099469A1 Structural body, and method for producing semiconductor substrate |
| 08/18/2011 | WO2011099199A1 Method for producing silicon carbide crystal and silicon carbide crystal |
| 08/18/2011 | WO2011098319A1 Crucible for photovoltaics |
| 08/18/2011 | US20110200833 Method of manufacturing a silicon carbide single crystal |
| 08/18/2011 | CA2775389A1 Method of producing silicon carbide crystal, and silicon carbide crystal |
| 08/17/2011 | EP2356268A2 Methods for preparing a melt of silicon powder for silicon crystal growth |
| 08/17/2011 | EP2356191A2 Abrasive particles having a unique morphology |
| 08/17/2011 | EP1440187B1 Powder metallurgy tungsten crucible for aluminum nitride crystal growth |
| 08/17/2011 | CN201933203U 适用于多晶硅坩埚烧结炉的电热场装置 Electric field device is suitable for polysilicon sintering furnace crucible |
| 08/17/2011 | CN201933201U 一种晶体硅铸锭炉热场结构 A crystal silicon ingot furnace thermal field structure |
| 08/17/2011 | CN201933197U 一种直拉法生长太阳能用8吋硅单晶的热场装置 One kind of Czochralski grown by 8-inch silicon single crystal solar thermal field devices |
| 08/17/2011 | CN201933196U 单晶炉用石墨坩埚 Crystal furnace with a graphite crucible |
| 08/17/2011 | CN1249368B Single crystal substrate of gallium arsenide, and epitaxial wafer using same |
| 08/17/2011 | CN102160143A Method for producing semiconductor substrate |
| 08/17/2011 | CN102159755A Method for producing nitride semiconductor crystal, nitride semiconductor crystal, and apparatus for producing nitride semiconductor crystal |
| 08/17/2011 | CN102159754A Directional solidification furnace for reducing melt contamination and reducing wafer contamination |
| 08/17/2011 | CN102157353A Method for preparing diamond substrate for high-heat-conductivity integrated circuit |
| 08/17/2011 | CN102154709A Preparation method of restructured surface of low-defect large-area silicon (100)-2xl |
| 08/17/2011 | CN102154706A Method for preparing one-dimension nano materials |
| 08/17/2011 | CN102154705A Preparation method of indium antimonide nanocrystal |
| 08/17/2011 | CN102154704A Nitride semiconductor crystal, manufacturing method of the nitride semiconductor freestanding substrate and nitride semiconductor device |
| 08/17/2011 | CN102154703A Method for preparing magnesium silicate whiskers |
| 08/17/2011 | CN102154702A Preparation method of iron-doped lead titanate single-crystal nanofibre with one-dimensional columnar structure |
| 08/17/2011 | CN102154701A Method for preparing manganese molybdate/cobalt molybdate hierarchical heterostructure nanowires |
| 08/17/2011 | CN102154700A Perovskite chromium oxide crystal and preparation method thereof |
| 08/17/2011 | CN102154699A Method for growing sapphire monocrystal and growth equipment |
| 08/17/2011 | CN102154698A Method for controlling seeding form in process of preparing large-sized sapphire single crystal by Kyropoulos method |
| 08/17/2011 | CN102154697A Preparation method of TiO2 crystal whiskers and method for adsorbing metal ions by using TiO2 crystal whiskers |
| 08/17/2011 | CN102154696A Preparation method of magnesium-silver co-doped zinc oxide nanocrystals |
| 08/17/2011 | CN102154695A Nickel oxide nano rod array material, method for preparing same and application thereof |
| 08/17/2011 | CN102154694A Preparation method of hydrogen and oxygen co-doped graphene |
| 08/17/2011 | CN102154693A Preparation method of rare earth cerium-doped boric acid potassium calcium optical crystal |
| 08/17/2011 | CN102154689A Vapor deposition system, method of manufacturing light emitting device and light emitting device |
| 08/17/2011 | CN102154688A Rubrene weak epitaxial growth thin film and application thereof in organic thin-film transistor |
| 08/17/2011 | CN102154686A Crystalline silicon ingot casting method and silicon ingot |
| 08/17/2011 | CN102154682A Preparation method of calcium borate whisker |
| 08/17/2011 | CN102154659A Preparation method of silicon nanowire by electrorefining industrial silicon by fused salt |
| 08/17/2011 | CN102153086A Quartz ceramic crucible |
| 08/17/2011 | CN101498042B Preparation of resistance variable oxide material Co3O4 thin film |
| 08/17/2011 | CN101328608B Growth method of mercuric bromide single crystal |
| 08/17/2011 | CN101198727B Method for growing silicon single crystal and method for manufacturing silicon wafer |
| 08/16/2011 | US7999983 Lens material, optical electronic component and optical electronic device |
| 08/16/2011 | US7998773 Method of growing semiconductor heterostructures based on gallium nitride |
| 08/16/2011 | US7998272 Method of fabricating multi-freestanding GaN wafer |
| 08/16/2011 | CA2491941C Nanostructures and methods for manufacturing the same |
| 08/16/2011 | CA2449714C Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| 08/11/2011 | WO2011096815A1 Apparatus and method for the production of semiconductor material foils |
| 08/11/2011 | WO2011096417A1 Silicon wafer and semiconductor device |
| 08/11/2011 | WO2011096109A1 Method for producing silicon carbide substrate |
| 08/11/2011 | WO2011095731A1 Method for manufacturing nanorods epitaxied on a substrate, epitaxied nanorods obtained by such a method and digital data recording medium |
| 08/11/2011 | US20110195251 Method For Pulling A Single Crystal Composed Of Silicon From A Melt Contained In A Crucible, and Single Crystal Produced Thereby |
| 08/11/2011 | DE102010007460A1 Verfahren zum Ziehen eines Einkristalls aus Silicium aus einer in einem Tiegel enthaltenen Schmelze und dadurch hergestellter Einkristall A method for pulling a silicon single crystal from a melt contained in a crucible and single crystal produced thereby |
| 08/11/2011 | CA2759074A1 Method for manufacturing silicon carbide substrate |
| 08/10/2011 | EP2354279A1 Method of manufacturing dislocation-free single-crystal silicon by czochralski method |
| 08/10/2011 | EP2354278A1 Method for producing a single crystal composed of silicon using molten granules |
| 08/10/2011 | EP1900859B1 Composite comprising array of acicular crystal, process for producing the same, photoelectric conversion element, luminescent element, and capacitor |
| 08/10/2011 | EP1891686B1 Iii-v semiconductor core-heteroshell nanocrystals, method for their manufacture and their applications |
| 08/10/2011 | EP1547131B1 Large-diameter sic wafer and manufacturing method thereof |
| 08/10/2011 | CN201924104U 卧式多晶硅还原炉炉体冷却结构 Horizontal polysilicon reduction furnace furnace cooling structure |
| 08/10/2011 | CN201924103U 多晶硅锭定向凝固炉气动手动阀 Polycrystalline silicon ingot directional solidification furnace pneumatic manual valve |
| 08/10/2011 | CN201924102U 高温碳化硅单晶生长炉的加热温控装置 High temperature silicon carbide single crystal growth furnace heating temperature control means |
| 08/10/2011 | CN201924100U 一种带气体冷阱的硅单晶生长炉 A cold trap with a silicon single crystal growth furnace gas |
| 08/10/2011 | CN102149857A Substrate, epitaxial layer provided substrate, method for producing substrate, and method for producing epitaxial layer provided substrate |
| 08/10/2011 | CN102148332A Preparation method of semiconductor nano-wire-based organic/inorganic composite solar cell |
| 08/10/2011 | CN102148155A Silicon wafer and production method therefor |
| 08/10/2011 | CN102148141A GaN衬底和半导体器件 GaN substrate and a semiconductor device |
| 08/10/2011 | CN102146588A Preparation method for AgTe binary phase change nanowire |
| 08/10/2011 | CN102146587A Ferrozirconium-copper lithium niobate crystal and preparation method thereof |
| 08/10/2011 | CN102146586A Large-area growing method for single crystal titanium dioxide nano rod and application of nano rod |
| 08/10/2011 | CN102146585A Non-polar surface GaN epitaxial wafer and preparation method of non-polar surface GaN epitaxial wafer |
| 08/10/2011 | CN102146583A Method for pulling a single crystal composed of silicon from a melt contained in a crucible, and single crystal produced thereby |