| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 07/11/2012 | CN102560649A Flowerlike-structure titanium dioxide formed by spindle single crystal and preparation method thereof |
| 07/11/2012 | CN102560648A Infrared non-linear optic crystalline material and preparation method thereof |
| 07/11/2012 | CN102560647A Bridgman-stockbarge method for preparing cerium-doped lanthanum bromide scintillating crystal |
| 07/11/2012 | CN102560646A N-type casting monocrystalline silicon with uniform doping resistivity and preparation method thereof |
| 07/11/2012 | CN102560645A Method for controlling resistivity during crystal silicon forming process, and device thereof |
| 07/11/2012 | CN102560644A Production method of square zone molten silicon single crystal for solar battery |
| 07/11/2012 | CN102560643A Template for preparing colloidal crystal and method for making template |
| 07/11/2012 | CN102560642A Method for assembling multi-colloid photonic crystals through particle fluidization |
| 07/11/2012 | CN102560641A N-type casting policrystalline silicon with uniform doping resistivity and preparation method thereof |
| 07/11/2012 | CN102560640A Polycrystal ingot casting furnace and method for producing single crystal-like silicon ingot by utilizing same |
| 07/11/2012 | CN102560639A Leak-proof protection system |
| 07/11/2012 | CN102560638A Equipment For Preparing Zinc Selenide/zinc Sulfide Optical Material, Furnace, Heater For The Furnace |
| 07/11/2012 | CN102560637A Controllable reducing atmosphere Kyropoulos furnace |
| 07/11/2012 | CN102560635A Preparation method of vanadium trioxide film |
| 07/11/2012 | CN102560634A Method for growing InGaAs film on GaAs substrate |
| 07/11/2012 | CN102560633A Method for depositing group III/V compounds |
| 07/11/2012 | CN102560632A Solid solution inducing layer for weak epitaxial growth of non-planar phthalocyanin thin film |
| 07/11/2012 | CN102560631A Growth method and equipment of sapphire crystal |
| 07/11/2012 | CN102560630A Thermal field capable of allowing synchronous growth of a plurality of crystals with edge-defined film-fed crystal growth technique and method thereof |
| 07/11/2012 | CN102560629A Method for producing low-cost czochralski silicon |
| 07/11/2012 | CN102560628A Special device for observing and sorting air bubbles of sapphire crystal with free-upward view and full view angle |
| 07/11/2012 | CN102560627A N-type czochralski silicon with uniform doping resistivity and preparation method thereof |
| 07/11/2012 | CN102560626A Method for improving radial resistivity uniformity of straightly-pulled and heavily-doped silicon single crystal |
| 07/11/2012 | CN102560625A Device and method for prolonging edge minority carrier lifetime of N-type silicon single crystal |
| 07/11/2012 | CN102560623A Preparation method of large-size sapphire single crystal |
| 07/11/2012 | CN102560622A Method for producing silicon single crystal ingot |
| 07/11/2012 | CN102560618A Method for preparing tungsten single crystal |
| 07/11/2012 | CN102560617A Method for preparing ferroelectric single crystal lead indium niobate-lead titanate |
| 07/11/2012 | CN102560565A Metal nanowire array prepared based on SOI and electroforming technologies and preparation method thereof |
| 07/11/2012 | CN102560415A Three-dimensional graphene/metal line or metal wire composite structure and preparation method thereof |
| 07/11/2012 | CN102560414A Method for preparing graphene on 3C-SiC substrate |
| 07/11/2012 | CN102560303A Shape setting a shape memory alloy dental arch |
| 07/11/2012 | CN102560212A High plasticity superhigh temperature niobium-based directionally solidified alloy and preparation method thereof |
| 07/11/2012 | CN102559180A Photoluminescent crystal material bismuth-europium tungstate and preparation method for same |
| 07/11/2012 | CN102557131A Preparation method for NaV2O5 |
| 07/11/2012 | CN102554261A Indium nanowire, oxide nanowire, conductive oxide nanowire and manufacturing methods thereof |
| 07/11/2012 | CN102553812A Preparation method of super-hydrophobic surface |
| 07/11/2012 | CN102552977A Preparation method and application of metal surface-etched nanoporous array |
| 07/11/2012 | CN102154702B Preparation method of iron-doped lead titanate single-crystal nanofibre with one-dimensional columnar structure |
| 07/11/2012 | CN102094248B Annealing device and method |
| 07/11/2012 | CN102051673B Graded-index birefringent crystal growth method |
| 07/11/2012 | CN101660197B Method for preparing single crystal rod by utilizing low-purity silicon |
| 07/11/2012 | CN101363135B Synthesis method of potassium hexatitanate whisker |
| 07/10/2012 | US8216375 Slab cross flow CVD reactor |
| 07/10/2012 | US8216363 Continuous antisolvent crystallization process and system using plug flow reactors |
| 07/10/2012 | US8216361 Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it |
| 07/10/2012 | CA2678488C Method of producing a group iii nitride crystal |
| 07/05/2012 | WO2012092369A2 Crucible body and method of forming same |
| 07/05/2012 | WO2012090951A1 DEVICE FOR PRODUCING SiC SINGLE CRYSTALS, JIG USED IN SAID PRODUCTION DEVICE, AND METHOD OF PRODUCING SiC SINGLE CRYSTALS |
| 07/05/2012 | WO2012090946A1 APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL |
| 07/05/2012 | WO2012090918A1 Method for producing semiconductor crystal, crystal production device, and group 13 nitride semiconductor crystal |
| 07/05/2012 | WO2012090572A1 Silicon carbide substrate, semiconductor device, method for producing silicon carbide substrate, and method for producing semiconductor device |
| 07/05/2012 | WO2012090436A1 Casting device and casting method |
| 07/05/2012 | WO2012090268A1 Monocrystalline silicon carbide epitaxial substrate, method for producing same, and monocrystalline sic device |
| 07/05/2012 | WO2012089441A1 Method of manufacturing annealed wafer |
| 07/05/2012 | WO2012089392A1 Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
| 07/05/2012 | WO2012088996A1 Semi-insulating silicon carbide single crystal and growing method therefor |
| 07/04/2012 | EP2472653A2 Electrode structure comprising intersecting silicon-containing fibres for lithium rechargeable batteries |
| 07/04/2012 | EP2472585A1 Tunnel field effect transistor and method for manufacturing same |
| 07/04/2012 | EP2472568A1 Silicon carbide epitaxial wafer and manufacturing method therefor |
| 07/04/2012 | EP2472567A2 Semiconductor layer |
| 07/04/2012 | EP2471981A1 Sic single crystal wafer and process for production thereof |
| 07/04/2012 | EP2471980A1 Method for producing silicon single crystal ingot |
| 07/04/2012 | EP2471978A1 Method for recharging silicon feedstock |
| 07/04/2012 | EP2471111A1 Method for cleaning the surface of a silicon substrate |
| 07/04/2012 | EP2470694A1 Doped transparent conductive oxide |
| 07/04/2012 | EP2470693A1 Process for production of multicrystalline silicon ingots by induction method |
| 07/04/2012 | EP2470318A2 Methods for controlling metal nanostructures morphology |
| 07/04/2012 | CN202297877U 长晶炉加热装置 Crystal growth furnace heating device |
| 07/04/2012 | CN202297871U 一种生产硫酸钙晶须的高压反应装置 A process for producing a high pressure reactor calcium sulfate whisker |
| 07/04/2012 | CN202297870U 超高纯锗单晶炉拉制装置 Ultra-pure germanium crystal pulling apparatus furnace |
| 07/04/2012 | CN202297869U 一种可加高的多晶硅铸锭用石英坩埚 One kind of polysilicon ingots can be heightened by a quartz crucible |
| 07/04/2012 | CN202297868U 超声波测量装置 Ultrasonic measuring device |
| 07/04/2012 | CN202297866U 多晶硅铸锭炉的氩气降温装置 Polycrystalline silicon ingot furnace in an argon gas cooling device |
| 07/04/2012 | CN202297865U 采用新型水路系统连接装置的多晶炉 Using polycrystalline furnace new waterway system connecting device |
| 07/04/2012 | CN202297857U 超高纯锗单晶炉坩埚杆 Ultra-pure germanium crystal furnace crucible rod |
| 07/04/2012 | CN202297856U 一种单晶炉及其加料装置 Single crystal furnace and charging device |
| 07/04/2012 | CN202297854U 直拉法单晶炉石墨热场导流罩 Czochralski crystal furnace graphite thermal field Shroud |
| 07/04/2012 | CN202297853U 用于拉制单晶硅的低能耗热场 Thermal energy consumption for pulling monocrystalline silicon |
| 07/04/2012 | CN202297850U Heightened single crystal furnace |
| 07/04/2012 | CN202297841U 高纯锗区熔炉用多个中高频加热线圈 High-purity germanium zone furnace with multiple high-frequency heating coil |
| 07/04/2012 | CN202297840U 一种多晶硅铸锭炉漏硅多重报警装置 One kind of multiple silicon polycrystalline silicon ingot furnace leak alarm device |
| 07/04/2012 | CN1896343B Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same |
| 07/04/2012 | CN1894771B Non-polarity (Al, B, Inc, Ga) N Quantum pit |
| 07/04/2012 | CN102549203A Method for production of laminate |
| 07/04/2012 | CN102549202A Large area deposition of graphene hetero-epitaxial growth, and products including the same |
| 07/04/2012 | CN102549201A Coated crucibles and methods for preparing and use thereof |
| 07/04/2012 | CN102549200A Process for production of multicrystalline silicon ingots by induction method |
| 07/04/2012 | CN102548061A Water-cooling copper electrode for producing polycrystalline silicon vacuum furnace |
| 07/04/2012 | CN102543718A Method for decreasing warp and bow of silicon carbide wafer |
| 07/04/2012 | CN102534808A Method for obtaining high-quality silicon carbide surfaces |
| 07/04/2012 | CN102534806A Preparation method for large area rutile type titanium dioxide (110)(1*1) surface |
| 07/04/2012 | CN102534805A Silicon carbide crystal annealing process |
| 07/04/2012 | CN102534804A Moisture-proof protection film of SrI2:Eu-doped scintillating crystal and preparation method thereof |
| 07/04/2012 | CN102534801A Method for improving quality of calcium sulfate whiskers |
| 07/04/2012 | CN102534800A Preparation method for In2Se3 nano material |
| 07/04/2012 | CN102534799A Preparation method of low-dimensional nano-structure sulfur group compounds |
| 07/04/2012 | CN102534798A High-temperature high-pressure crystal growth equipment |
| 07/04/2012 | CN102534797A Method of producing sic single crystal |
| 07/04/2012 | CN102534796A Method for preparing pure alpha silicon carbide whiskers |