| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
|---|
| 07/18/2012 | CN102586872A Low-temperature crystallization manufacturing method and application of titanium dioxide nanotube array |
| 07/18/2012 | CN102586871A Luminous crystal containing bismuth and with ultra wide band of 1-3 micrometers and preparation method thereof |
| 07/18/2012 | CN102586870A Holmium-doped gadolinium-yttrium-barium fluoride crystal and growth method thereof |
| 07/18/2012 | CN102586869A Three-dimensional grapheme tube and preparation method thereof |
| 07/18/2012 | CN102586868A Preparation method of large-size single-crystal graphene and continuous thin film thereof |
| 07/18/2012 | CN102586867A Method for preparing zinc oxide single crystal film by using iron oxide buffer layer |
| 07/18/2012 | CN102586866A Method for restraining bulbs in process of growing slice-shaped sapphire in guiding mold mode |
| 07/18/2012 | CN102586862A Travelling wave magnetic field method for improving resistivity uniformity of Czochralski silicon |
| 07/18/2012 | CN102586861A Sapphire single crystal furnace |
| 07/18/2012 | CN102586859A Method for improving radial resistivity uniformity of float-zone silicon monocrystal |
| 07/18/2012 | CN102586857A Method for controlling melting residual height of seed crystals of ingot monocrystalline silicon in non-contact manner |
| 07/18/2012 | CN102586856A Crucible capable of improving utilization rate of silicon ingot and using frequency of seed crystal and preparation method of crucible |
| 07/18/2012 | CN102583813A Recovery method for terephthalic acid in alkali deweighting wastewater as well as production method and application of terephthalic acid metal salt whisker |
| 07/18/2012 | CN102583331A Preparation method for large-area graphene based on Ni film auxiliary annealing and Cl2 reaction |
| 07/18/2012 | CN102206863B Preparation method of metal phthalocyanine nanowires |
| 07/18/2012 | CN102134751B Preparation method of PbAgTe ternary nanowire |
| 07/18/2012 | CN102127808B Independent metal source system of semiconductor growth equipment |
| 07/18/2012 | CN102086529B Czochralski preparation method of erbium and ytterbium double-doped potassium tantalate niobate lithium monocrystal |
| 07/18/2012 | CN101868566B Process for producing single crystal SiC substrate and single crystal SiC substrate produced by the process |
| 07/18/2012 | CN101735283B Cocrystallization technology of glucosamine hydrochloride and glucosamine potassium/sodium sulfate |
| 07/18/2012 | CN101724887B Silica glass crucible having multilayered structure |
| 07/18/2012 | CN101691219B Heating device of continuous polysilicon purifying crystal oven |
| 07/18/2012 | CN101661910B Gallium nitride semiconductor substrate and blue luminescent device |
| 07/18/2012 | CN101613877B Application of raw material silicon briquette with good packing performance in single crystal furnace or polycrystalline furnace |
| 07/18/2012 | CN101443476B High crystalline quality synthetic diamond |
| 07/18/2012 | CN101378173B Chromium-doped molybdic acid aluminum rubidium tunable laser crystal, and preparation method and application thereof |
| 07/18/2012 | CN101365829B Piezoeletric single crystal and method of production of same, piezoelectric element, and dielectric element |
| 07/18/2012 | CN101257079B Semiconductor layer |
| 07/18/2012 | CN101084290B Fluorescent material and method for preparation thereof, radiation detector using fluorescent material, and x-ray ct device |
| 07/18/2012 | CN101024899B Non-linear optical crystal selenium borate |
| 07/17/2012 | US8221550 Process and apparatus for producing a single crystal of semiconductor material |
| 07/12/2012 | WO2012094664A2 Colloidal semiconductor nanocrystals having 1-dimensional quantum confinement and methods of making the same |
| 07/12/2012 | WO2012093684A1 Method for forming identification marks on silicon carbide single crystal substrate, and silicon carbide single crystal substrate |
| 07/12/2012 | WO2012093601A1 EPITAXIAL GROWTH SUBSTRATE AND GaN LED DEVICE |
| 07/12/2012 | US20120178267 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride |
| 07/12/2012 | DE112010003190T5 Siliziumoxidentfernungsvorrichtung und Anlage zum Rückgewinnen von Edelgas, um es ineiner Siliziumeinkristall-Herstellungsvorrichtung zu verwenden Siliziumoxidentfernungsvorrichtung and system for recovering rare gas to use it ineiner silicon manufacturing apparatus |
| 07/12/2012 | DE102011002599A1 Verfahren zur Herstellung eines Silizium-Ingots A method for producing a silicon ingot |
| 07/12/2012 | DE102011002598A1 Verfahren zur Herstellung eines Silizium-Ingots A method for producing a silicon ingot |
| 07/11/2012 | EP2474651A2 Method and apparatus for growing a sapphire single crystal |
| 07/11/2012 | CN202323117U 一种蓝宝石生产的冷却水系统 One kind of cooling water producing system sapphire |
| 07/11/2012 | CN202323116U 一种引入氧化锆球的蓝宝石生长的新型热场 An introduction of zirconia balls of sapphire growth of new hot games |
| 07/11/2012 | CN202323115U Side thermal field structure of polycrystalline silicon ingot furnace |
| 07/11/2012 | CN202323114U 一种多晶硅铸锭炉底部冷却装置和使用该冷却装置的多晶硅铸锭炉 One kind of polycrystalline silicon ingot furnace bottom of the cooling device and the use of the polycrystalline silicon ingot furnace cooling device |
| 07/11/2012 | CN202323113U 一种生产多晶硅真空炉用水冷铜电极 Vacuum furnace with a polysilicon production of water-cooled copper electrodes |
| 07/11/2012 | CN202323110U 一种太阳能硅棒的生产系统 A solar silicon rods production system |
| 07/11/2012 | CN202323109U 蓝宝石单晶炉用称重装置 Sapphire crystal furnace weighing device |
| 07/11/2012 | CN202323104U 单晶硅生长炉及其加料装置 Monocrystalline growth furnace and charging device |
| 07/11/2012 | CN202323103U 一种单晶硅生长炉用保温隔热筒 One kind of monocrystalline silicon growth furnace tube with insulation |
| 07/11/2012 | CN202323102U 一种用于生长4英寸蓝宝石晶体的热场 A sapphire crystal growing four inches thermal field |
| 07/11/2012 | CN202323100U 直拉八英寸硅单晶热场 Eight inches Czochralski silicon single crystal thermal field |
| 07/11/2012 | CN202323098U Graphite substrate of directional solidification furnace |
| 07/11/2012 | CN202323097U 一种采用中心对称开合的晶硅铸锭炉热场热门控制装置 A crystalline silicon ingot furnace Thermal Hot controls the opening and closing of the use of centrally symmetric |
| 07/11/2012 | CN202322959U 母丝成型装置 Mother wire forming device |
| 07/11/2012 | CN202317028U 氢脆炉用料盒 Hydrogen embrittlement furnace pod |
| 07/11/2012 | CN1969067B III group nitride single crystal and method for preparation thereof, and semiconductor device |
| 07/11/2012 | CN102576726A Tunnel field effect transistor and method for manufacturing same |
| 07/11/2012 | CN102576666A Silicon carbide epitaxial wafer and manufacturing method therefor |
| 07/11/2012 | CN102576659A Combined substrate having silicon carbide substrate |
| 07/11/2012 | CN102575384A Substrate, group-3B element nitride crystals, and process for producing same |
| 07/11/2012 | CN102575383A Method for producing silicon carbide crystal and silicon carbide crystal |
| 07/11/2012 | CN102575382A Single crystal, process for producing same, optical isolator, and optical processor using same |
| 07/11/2012 | CN102575381A Silica glass crucible for pulling silicon single crystal and method for producing same |
| 07/11/2012 | CN102575380A Method for treating single crystal CVD diamond and product obtained |
| 07/11/2012 | CN102575379A Method for making fancy orange coloured single crystal cvd diamond and product obtained |
| 07/11/2012 | CN102575376A Apparatus and method for crystallization of silicon |
| 07/11/2012 | CN102569480A Cuprous oxide-based PIN-junction solar battery of nano structure and preparation method thereof |
| 07/11/2012 | CN102569055A Adjustment method of SiC (silicon carbide) single crystal flatness by wet etching |
| 07/11/2012 | CN102564976A Material for detection of nitrite in aqueous solution and preparation method thereof |
| 07/11/2012 | CN102560685A Method of preparing fleece through wet process based on monocrystalline silicon wafer cut by diamond wire |
| 07/11/2012 | CN102560684A Method for reducing as-grown dislocation of heavily boron doped czochralski silicon chip |
| 07/11/2012 | CN102560679A Dielectric gradient ceramic matrix photonic crystal |
| 07/11/2012 | CN102560678A Method for inhibiting mixed crystal from generating in growth process of 4-(4-dimethylaminostyryl) picoline p-toluenesulfonate crystal |
| 07/11/2012 | CN102560677A Method for preparing self-assembling copper sulfide film with flake crystalline grains |
| 07/11/2012 | CN102560676A Method for performing GaN single crystal growth by using thinned and bonded structure |
| 07/11/2012 | CN102560675A Nonpolar InN film growing on LiGao2 substrate and preparation method of nonpolar InN film |
| 07/11/2012 | CN102560674A Preparation method of copper sulfide thin film with x-shaped-flaky crystal crossing structure |
| 07/11/2012 | CN102560673A Method for prolonging service life of current carrier of silicon carbide material |
| 07/11/2012 | CN102560672A Semi-insulating silicon carbide single crystal material |
| 07/11/2012 | CN102560671A Semi-insulating silicon carbide mono-crystal |
| 07/11/2012 | CN102560670A Rare-earth oxyorthosilicate scintillator crystals and method of making rare-earth oxyorthosilicate scintillator crystals |
| 07/11/2012 | CN102560669A Chromium-doped potassium scandium tungstate tunable laser crystal |
| 07/11/2012 | CN102560668A Preparation method of vanadate composite laser crystal having zirconite structure |
| 07/11/2012 | CN102560667A Novel laser crystal of thulium-activated calcium niobate |
| 07/11/2012 | CN102560666A Preparation method of composite laser crystal in garnet structure |
| 07/11/2012 | CN102560665A Method for growing cerium-doped alumina-yttrium aluminum garnet eutectic fluorescent material |
| 07/11/2012 | CN102560664A Novel medium-wave infrared laser crystal of ytterbium-erbium doped gadolinium gallium garnet |
| 07/11/2012 | CN102560663A 2.8-3 micrometers laser crystal and its preparation method |
| 07/11/2012 | CN102560662A Novel medium wave infrared laser crystals of chromium thulium co-doped erbium-activated yttrium aluminate |
| 07/11/2012 | CN102560661A Chromium and praseodymium co-doped erbium-activated calcium yttrium aluminate novel medium-wave infrared laser crystal |
| 07/11/2012 | CN102560660A Novel chromium-holmium co-doped erbium-activated yttrium aluminate medium-wave infrared laser crystal |
| 07/11/2012 | CN102560659A Nonlinear optical crystal and preparation method and application thereof |
| 07/11/2012 | CN102560658A Novel medium wave infrared laser crystal of chromium-praseodymium-codoped erbium-activated calcium gadolinium aluminate |
| 07/11/2012 | CN102560657A Chromium and praseodymium co-doped erbium-activated calcium lanthanum aluminate novel medium-wave infrared laser crystal |
| 07/11/2012 | CN102560656A Preparation method of micron flower-like composite metal basic carbonate |
| 07/11/2012 | CN102560655A Sapphire crystal growing furnace |
| 07/11/2012 | CN102560654A Extracting device for floating impurity |
| 07/11/2012 | CN102560653A Lifting appliance for crucible for growing sapphire single crystal |
| 07/11/2012 | CN102560652A Temperature measuring device of high temperature vacuum furnace |
| 07/11/2012 | CN102560651A Dielectric crystal sodium borate mandelate dihydrate and its preparation method and application |
| 07/11/2012 | CN102560650A Porous aluminum oxide photonic crystal and preparation method and applications thereof |