Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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08/01/2012 | CN102618922A Method for epitaxially growing GaAs thin film on Si substrate |
08/01/2012 | CN102618921A Double-exhaust flat-plate epitaxial furnace |
08/01/2012 | CN102618919A Charging device for single crystal furnace |
08/01/2012 | CN102618917A Method for preparing wide band gap ZnS thin film material by combining hydrothermal method and pulse electro-deposition |
08/01/2012 | CN102618916A Automatic control method for culturing and continuous filtration of crystals |
08/01/2012 | CN102617619A Rare earth complex nanobelt and preparation method thereof |
08/01/2012 | CN102617452A Organic micro/nano material of pyrenetetrasulfonic acid/amethyst derivative charge transfer compounds and preparation method thereof |
08/01/2012 | CN102330155B Monocrystalline silicon wafer etching assistant, as well as preparation and using method thereof |
08/01/2012 | CN102181928B Method for preparing ZnNi/Ni-ZnO nano-tube through direct current deposition |
08/01/2012 | CN101481823B Control system for high pressure protective gas for mercury cadmium telluride material mercury-rich preparing technology |
07/31/2012 | US8231728 Epitaxial growth process |
07/31/2012 | US8231725 Semiconductor wafers of silicon and method for their production |
07/26/2012 | WO2012099796A2 Reactor system and method of polycrystalline silicon production therewith |
07/26/2012 | WO2012099343A2 Resistance heated sapphire single crystal ingot grower, method of manufacturing resistance heated sapphire sngle crystal ingot, sapphire sngle crystal ingot, and sapphire wafer |
07/26/2012 | WO2012099180A1 Target material conversion method, crystal manufacturing method, composition manufacturing method, and target material conversion device |
07/26/2012 | WO2012098826A1 Single crystal manufacturing device and single crystal manufacturing method |
07/26/2012 | WO2012098824A1 Method for measurement of temperature of melt, radiation thermometer, and process for production of silicon single crystals |
07/26/2012 | DE112010000953T5 Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung A method of manufacturing a silicon carbide semiconductor device |
07/25/2012 | EP2479319A1 Container for crystallization, crystallization apparatus, method for producing crystal, and substrate for crystallization |
07/25/2012 | EP2478553A1 Methods of solid phase recrystallization of thin film using pulse train annealing method |
07/25/2012 | EP2478135A1 Apparatus and method for crystallization of silicon |
07/25/2012 | EP2478134A1 Film crystallization method |
07/25/2012 | EP2477944A1 Sublimation growth of sic single crystals |
07/25/2012 | EP2477767A2 Cage nanostructures and preparation thereof |
07/25/2012 | CN102612575A Single-crystal sapphire for producing single-crystal sapphire substrate for LED, single-crystal sapphire substrate for LED, luminescent element, and processes for producing these |
07/25/2012 | CN102610350A Titanium oxide-based composite magnetic material and preparation method thereof |
07/25/2012 | CN102605433A Method for eliminating primary oxygen precipitation in nitrating Czochralski silicon chips |
07/25/2012 | CN102605430A Process for preparing calcium sulfate crystal whisker by desulfurized gypsum as well as calcium sulfate crystal whisker |
07/25/2012 | CN102605429A Method for preparing one-dimensional nanowires by tin whisker growth |
07/25/2012 | CN102605428A PbS nanomaterial characterized by oriented attachment structure and preparation method thereof |
07/25/2012 | CN102605427A Method for synthesizing tellurium barium molybdate (BaTeMo2O9) monocrystal micron powder |
07/25/2012 | CN102605426A Thermal field structure for generating temperature difference in ultra-high temperature state |
07/25/2012 | CN102605425A Laser matrix crystal of lead chlorofluoride doped with rare earth ions and preparation method thereof |
07/25/2012 | CN102605424A Control system for polysilicon ingot furnace and control method |
07/25/2012 | CN102605423A Handling equipment for crystalline silicon manufacturing apparatus |
07/25/2012 | CN102605420A Full-angle view window of kyropoulos method mono-crystal furnace |
07/25/2012 | CN102605418A Solar cell substrate, manufacturing method of solar cell and crucible used for same |
07/25/2012 | CN102605417A Method for preparing polymer nanotube |
07/25/2012 | CN102605416A Preparation method of controllable linear defects in colloidal photonic crystals |
07/25/2012 | CN102603273A Preparation method of high-purity sintered alumina for monocrystal sapphire growth |
07/25/2012 | CN102602933A Polycrystalline silicon purifying device and method |
07/25/2012 | CN102191560B 3-oxooleanolic acid monocrystal and culture method thereof |
07/25/2012 | CN102130223B Method for coarsening surface of GaN-based LED epitaxial wafer |
07/25/2012 | CN102127816B Method for preparing Ni3A1-based rhenium-contained moncrystal alloy with liquid metal cooling method |
07/25/2012 | CN102108540B Method for synthesizing mono-dispersed multicomponent compound nanocrystals |
07/25/2012 | CN102094243B Preparation method of nano titanic acid tablets |
07/25/2012 | CN102080260B Method for preparing uniform-diameter zinc oxide nanorods on LB (Langmuir-Blodgett) zinc oxide seed film |
07/25/2012 | CN102051687B Method for preparing gold crystals by adopting surface active agent molecule C18N3 |
07/25/2012 | CN102041476B Method for preparing cobalt titanate film by dual-target magnetron sputtering method |
07/25/2012 | CN102020276B Method for utilizing waste heat in polycrystalline silicon production process |
07/25/2012 | CN102011174B Air-cooled sleeve for straight pull type silicon single crystal growing furnace |
07/25/2012 | CN102011103B Chemisorption method for preparing carbon nitride film |
07/25/2012 | CN101994150B Method for deciding directional solidification primary dendrite arm spacing by controlling temperature gradient |
07/25/2012 | CN101984149B Method for preparing large chlorine barium borate nonlinear optic crystal and application thereof |
07/25/2012 | CN101920960B Method for preparing solar grade polysilicon by metallurgy method and polysilicon prepared thereby |
07/25/2012 | CN101792931B Metal sulfide single crystal material and preparation method |
07/25/2012 | CN101665984B Copper zinc alloy nanowire and preparation method thereof |
07/25/2012 | CN101583745B Process for production of GaN crystals, GaN crystals, GaN crystal substrate, semiconductor devices, and apparatus for production of GaN crystals |
07/25/2012 | CN101550591B Monodisperse C70 nano unit crystal material and method for preparing same |
07/25/2012 | CN101522960B Method and apparatus for the production of crystalline silicon substrates |
07/25/2012 | CN101425484B Nitride semiconductor free-standing substrate and device using the same |
07/25/2012 | CN101400835B Method for continual preparation of polycrystalline silicon using a fluidized bed reactor |
07/25/2012 | CN101319366B Automatic control system and method for polysilicon ingot furnace |
07/25/2012 | CN101010780B Systems and methods for nanowire growth and harvesting |
07/24/2012 | US8227792 Relaxed low-defect SGOI for strained SI CMOS applications |
07/24/2012 | US8227021 applying a raw material solution containing lead acetate, lanthanum acetate, tetrabutoxyzirconium and tetraisopropoxytitanium, on a substrate to form a coating layer, then firing the layer to form perovskite crystal layer having nanostructure thickness and repeating to form multilayers; uniformity |
07/24/2012 | CA2673660C Sapphire substrates and methods of making same |
07/19/2012 | WO2012053782A3 Process for growing silicon carbide single crystal and device for the same |
07/19/2012 | WO2012051182A3 Fabrication of single-crystalline graphene arrays |
07/19/2012 | US20120181547 High voltage switching devices and process for forming same |
07/19/2012 | DE112009005154T5 Verfahren zum Erzeugen eines SiC-Einkristalls A method for producing an SiC single crystal |
07/18/2012 | EP2477237A1 Group-iii nitride crystal substrate, group-iii nitride crystal substrate with epitaxial layer, semiconductor device, and method for manufacturing same |
07/18/2012 | EP2477230A2 Nanowires-based transparent conductors |
07/18/2012 | EP2476787A1 Semiconductor substrate, method for producing semiconductor substrate, substrate for semiconductor growth, method for producing substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic device |
07/18/2012 | EP2476786A1 Silica glass crucible for pulling silicon single crystal and method for producing same |
07/18/2012 | EP1887110B1 Silicon single crystal manufacturing method and silicon wafer |
07/18/2012 | EP1784871B1 Method for producing a thin-film chalcopyrite compound |
07/18/2012 | CN102597340A Method for producing laminate |
07/18/2012 | CN102597339A Silicon carbide crystal and method for producing silicon carbide crystal |
07/18/2012 | CN102597338A Silicon carbide substrate and method for producing same |
07/18/2012 | CN102597337A Sic single crystal wafer and process for production thereof |
07/18/2012 | CN102597336A Large area deposition and doping of graphene, and products including the same |
07/18/2012 | CN102597335A Methods of making an article of semiconducting material on a mold comprising semiconducting material |
07/18/2012 | CN102597334A Method and apparatus for growing a sapphire single crystal |
07/18/2012 | CN102593274A Method by adopting impulse airflow method to grow gallium phosphide (GaP) current extension layer |
07/18/2012 | CN102586891A Lining combined type high-temperature resisting crucible |
07/18/2012 | CN102586889A Method for smoothing nitride substrate |
07/18/2012 | CN102586887A Suede-making additive for low-reflectivity monocrystalline silicon |
07/18/2012 | CN102586886A Silicon wafer annealing method for removing oxygen sediment on surface of silicon wafer |
07/18/2012 | CN102586884A Polysilicon silicon chip double-diffusion manufacturing method |
07/18/2012 | CN102586882A Zinc oxide/zinc sulfide superlattice nanometer material and manufacturing method thereof |
07/18/2012 | CN102586881A Preparation method of zinc oxide whiskers containing metal nickel and copper |
07/18/2012 | CN102586880A Preparation method of oriented ZeTe nanocrystals |
07/18/2012 | CN102586879A Patterned substrate for aluminum nitride (AlN) crystal growth |
07/18/2012 | CN102586878A Compound of barium, bismuth, boron and oxygen, optical crystal of compound of barium, bismuth, boron and oxygen and preparation method and application thereof |
07/18/2012 | CN102586877A Raman crystals containing six-membered boron-oxygen rings and growing method and application of the crystals |
07/18/2012 | CN102586876A Preparation method of Russian export blend crude oil (REBCO) high-temperature superconducting block materials |
07/18/2012 | CN102586875A Tungsten plate cylinder for sapphire crystal growth thermal field |
07/18/2012 | CN102586874A Ultrahigh temperature tungsten rod heater |
07/18/2012 | CN102586873A One-step preparation method for Al2O3 reverse opal structure |