Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
02/2011
02/09/2011CN101966792A Method for forming patterns on surface of gem
02/09/2011CN101660189B Branch controllable titanium dioxide nanotube array thin film and preparation method thereof
02/09/2011CN101659798B Insulating coatings, device for purifying polysilicon, method for ionization resistance and short circuit resistance and electronic equipment
02/09/2011CN101328607B Preparation of Zn2P3 nanorod
02/09/2011CN101319386B Preparation method of KTP crystal with anti-soil performance
02/09/2011CN101319381B Low temperature condition preparation of orientated growth nanometer flaky Bi2Fe4O9
02/09/2011CN101311358B Process for preparing zinc oxide nanometer wire array by femtosecond laser and device thereof
02/09/2011CN101283122B ZnO crystal, method for growing the crystal, and method for manufacture of light-emitting element
02/09/2011CN101168474B Method for manufacturing polycrystalline silicon thin film at low temperature
02/09/2011CN100999388B Preparation method of polycrystalline silicon film by surface modifying solution for inducing crystallization
02/08/2011US7883998 Vapor phase growth method
02/08/2011US7883578 Process for preparing CaF2 lens blanks especially for 193 nm and 157 nm lithography with minimized deffects
02/08/2011CA2495840C Coloured diamond
02/03/2011WO2011014576A1 Systems and methods of detecting force and stress using tetrapod nanocrystal
02/03/2011WO2011014408A1 Nanowire synthesis
02/03/2011WO2011013695A1 Silica glass crucible for pulling of silicon single crystal
02/03/2011US20110024766 One hundred millimeter single crystal silicon carbide wafer
02/03/2011DE112009000569T5 Silizium-Einkristall-Wafer, Verfahren zur Herstellung eines Silizium-Einkristalls oder Verfahren zur Herstellung eines Silizium-Einkristall-Wafers, und Halbleiterbauelement Silicon single crystal wafer, method for manufacturing a silicon single crystal or the method for producing a silicon single crystal wafer, and the semiconductor component
02/02/2011EP2280295A1 Method for producing optical elements for microlithography, lens systems obtainable therewith and their use
02/02/2011EP2280097A1 Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
02/02/2011EP2279817A1 Directionally solidified elongated component with elongated grains of differing widths
02/02/2011EP2279438A1 Electrically-tunable optical devices
02/02/2011CN201729910U Gas flow control device for polycrystalline silicon ingot production furnace
02/02/2011CN101965419A Method for growing silicon carbide single crystal
02/02/2011CN101965418A Quartz crucible for pulling silicon single crystal and method for manufacturing the quartz crucible
02/02/2011CN101962811A Monocrystalline silicon piece texturizing liquid and texturizing method thereof
02/02/2011CN101962810A Single crystal LiGa3Te5 as well as preparation method and application thereof
02/02/2011CN101962809A Process for growing lead tungstate crystal by vertical gradient solidification method
02/02/2011CN101962808A High-efficiency and energy-saving potassium titanate whisker preparation method
02/02/2011CN101962807A Equipment and method for producing tetrapod-shaped zinc oxide whiskers
02/02/2011CN101962806A Preparation method of flexible cold cathode material
02/02/2011CN101962805A Electrochemical preparation method of lanthanum phosphate or rare earth doped lanthanum phosphate film
02/02/2011CN101962804A Epitaxial material stress control-based GaN thick film self-separation method
02/02/2011CN101962801A Method for rapidly growing Nb205 crystal
02/02/2011CN101962798A Method and equipment for producing sapphire single crystal
02/02/2011CN101428803B Method and apparatus for producing high purity polysilicon with high-purity metal silicon purification
02/02/2011CN101314183B Method for synthesizing monocrystal bismuth nano-wire with intense magnetic field abduction
02/02/2011CN101311361B Chinese character 'zhi-shaped' nano-belt of periodic SnO2 and method for preparing same
02/02/2011CN101220514B Method for manufacturing high resistivity tellurium-zincium-cadmium crystal
02/02/2011CN101009350B Nitride-based group III-V semiconductor substrate and fabrication method therefor, and nitride-based group III-V light-emitting device
02/01/2011US7879148 System and method for producing synthetic diamond
02/01/2011US7879147 Large area, uniformly low dislocation density GaN substrate and process for making the same
02/01/2011US7879115 Method for using a static electric field to induce crystallization and to control crystal form
01/2011
01/27/2011WO2011010982A1 Apparatus for producing multicrystalline silicon ingots by induction method
01/27/2011WO2011010724A1 Method and device for manufacturing semiconductor crystal, and semiconductor crystal
01/27/2011WO2011010566A1 Pzt film, electronic component, method for manufacturing an oxide film, and steam pressure rapid heating device
01/27/2011US20110018003 Group iii nitride semiconductor substrate and manufacturing method thereof
01/27/2011US20110017126 Coloured diamond
01/27/2011DE112009000196T5 Verfahren zum Wachsen eines P-SiC-Halbleitereinkristalls und P-SiC-Halbleitereinkristall A process for growing a p-type SiC semiconductor single crystal and P-type SiC semiconductor single crystal
01/26/2011EP2278050A1 Method and equipment for producing sapphire single crystal
01/26/2011EP2278049A1 Apparatus for manufacturing Group III Nitride Crystals
01/26/2011EP2277891A1 CRYSTAL STRUCTURE OF THE INFLUENZA VIRUS POLYMERASE PAc-PB1n COMPLEX AND USES THEREOF
01/26/2011EP2277696A2 Vacinal gallium nitride substrate for high quality homoepitaxy
01/26/2011EP2276878A1 Method for producing doped gallium arsenide substrate wafers with a low optical absorption coefficient
01/26/2011EP2276702A1 Crystalline inorganic species having optimised reactivity
01/26/2011EP1851310B1 Crystal structure of tak1-tab1
01/26/2011CN201722158U Novel reducing furnace spray nozzle
01/26/2011CN201722157U Silicon tetrachloride hydrogenation furnace
01/26/2011CN201722156U Novel silicide electrode insulating ring
01/26/2011CN101960056A AlxGa(1-x)As substrate, epitaxial wafer for infrared LED, infrared LED, method for production of AlxGa(1-x)As substrate, method for production of epitaxial wafer for infrared LED, and method for production of infrared LED
01/26/2011CN101956237A Calcium germinate nanowire and preparation method thereof
01/26/2011CN101956236A Big-size doped lithium niobate crystal and preparation method thereof
01/26/2011CN101956235A Method for preparing iron-doped lithium aluminate crystal
01/26/2011CN101956234A Method for preparing basic magnesium sulfate whiskers by recycling mother liquor
01/26/2011CN101956233A Method for preparing lithium gallate crystals
01/26/2011CN101956232A Polycrystalline silicon producing method, apparatus for producing polycrystalline silicon, and polycrystalline silicon
01/26/2011CN101956228A Multi-crucible fused mass growth technique of lithium aluminate and doped lithium aluminate crystal
01/26/2011CN101956223A Method for preparing cuprous oxide composite titanium dioxide nanotube array
01/26/2011CN101956222A Preparation method of titanium dioxide nanotube array sensitized by cadmium sulfide nanoparticles
01/26/2011CN101956108A Method for controlling primary dendritic spacing during directional solidification by adding rare earth Ce
01/26/2011CN101956107A Method for controlling primary dendrite arm spacing of directional solidification by adding composite rare earth
01/26/2011CN101955773A Praseodymium and cerium-doped lutetium scandium borate luminous material and preparation method thereof
01/26/2011CN101338448B Hydrothermal preparation method for aluminum oxide whiskers at low temperature
01/26/2011CN101319368B Method for simultaneously synthesizing SiO2 nan-wire and SiC crystal whisker
01/26/2011CN101311350B Silicon with three-dimensional depression structure and method for preparing same
01/26/2011CN101074488B Device and method for manufacturing crystal or polycrystal material especially polysilicon
01/25/2011US7875536 Nanostructures formed of branched nanowhiskers and methods of producing the same
01/25/2011US7875118 Crystallization method and crystallization apparatus
01/25/2011US7875117 Nitrogen doped silicon wafer and manufacturing method thereof
01/25/2011CA2464832C Semiconductor liquid crystal composition and methods for making the same
01/20/2011WO2011009062A2 Coated crucibles and methods for preparing and use thereof
01/20/2011WO2011007773A1 Mutant ras polypeptide crystal
01/20/2011WO2011007762A1 Process for production of laminate having aluminum nitride monocrystal layer, laminate produced by the process, process for production of aluminum nitride monocrystal substrate using the laminate, and aluminum nitride monocrystal substrate
01/20/2011WO2011007678A1 Epitaxial silicon wafer and method for manufacturing same
01/20/2011WO2011007458A1 Process for producing sic single crystal
01/20/2011WO2011007457A1 Process for producing sic single crystal
01/20/2011WO2011007156A1 A method and apparatus for treating diamond using liquid metal saturated with carbon
01/20/2011US20110012172 Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups and Related Methods
01/20/2011US20110012127 GaN CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
01/20/2011US20110012061 Semiconductor nanocrystal heterostructures
01/20/2011DE102006034786B4 Monokristalline Halbleiterscheibe mit defektreduzierten Bereichen und Verfahren zur Ausheilung GOI-relevanter Defekte in einer monokristallinen Halbleiterscheibe Monocrystalline semiconductor wafer with reduced defect areas and methods for healing GOI-related defects in a monocrystalline semiconductor wafer,
01/20/2011CA2767593A1 A method and apparatus for treating diamond using liquid metal saturated with carbon
01/19/2011EP2276061A1 PROCESS FOR PRODUCING SI(1-V-W-X)CWALXNV BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-V-W-X)CWALXNV BASE MATERIAL, AND EPITAXIAL WAFER& xA;
01/19/2011EP2276060A1 PROCESS FOR PRODUCING SI(1-V-W-X)CWALXNV BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-V-W-X)CWALXNVBASE MATERIAL, AND EPITAXIAL WAFER & xA;
01/19/2011EP2276059A1 Method of controlling stress in gallium nitride films deposited on substrates
01/19/2011EP2275591A1 Method for manufacturing a mono-crystalline layer on a substrate
01/19/2011EP2275387A2 Polycrystalline silicon producing method, apparatus for producing polycrystalline silicon, and polycrystalline silicon
01/19/2011CN201713609U Single crystal furnace or multicrystal furnace circulating water pipeline device
01/19/2011CN201713607U Cooling holder for monocrystalline silicon anchorage
01/19/2011CN201713606U Wood tray used for containing small square polysilicon ingots