Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
11/1997
11/19/1997CN1165208A Single crystal pulling method and apparatus for its implementation
11/06/1997DE19712777A1 Heater electrode melting prevention e.g. in Czochralski apparatus
11/06/1997DE19710672A1 Quartz glass crucible for silicon single crystal production
11/05/1997CN1163950A 单晶提拉装置 Single crystal pulling apparatus
11/05/1997CN1163949A Single crystal pulling apparatus
11/04/1997US5683505 Process for producing single crystals
11/04/1997US5683504 Growth of silicon single crystal
11/04/1997US5683281 High purity composite useful as furnace components
10/1997
10/30/1997DE19710954A1 Annular element lifting device for positioning heater of single crystal
10/28/1997US5681758 Method for fabricating semiconductor single crystal
10/23/1997DE19604027C1 Vapour pressure-controlled Czochralski growth apparatus
10/21/1997US5679151 Lowering temperature of grown crystal through phase transition temperature range while establishing a temperature gradient from one end of crystal to the other
10/15/1997CN1162028A Single crystal drawing device
10/15/1997CN1162027A Single crystal drawing device
10/14/1997US5676751 Czochralski method wherein single crystal silicon rod is pulled from silicon melt in crucible in chamber comprising cooling chamber with flow of gas having specified thermoconductivity
10/08/1997EP0800029A1 Sealed feedthrough for a moving part
10/08/1997EP0799913A1 Apparatus for pulling single crystals
10/07/1997US5674317 Exfoliation resistance, durability, wear resistance; container for crystal growing of semiconductor melt
10/02/1997WO1997036025A1 Process for producing silicon single crystal
10/02/1997WO1997036024A1 Methods of doping molten semiconductor in a crystal-growing furnace
10/02/1997DE19612586A1 Single crystal pulling apparatus
10/01/1997EP0798404A2 Apparatus for manufacturing single crystal of silicon
10/01/1997EP0798403A1 Continuously charged czochralski method of manufacturing silicon monocrystal, and dopant feeding apparatus
10/01/1997CN1160779A Single crystal fulling apparatus
10/01/1997CN1160778A Single crystal growth method
09/1997
09/25/1997DE19610894A1 Single crystal pulling apparatus
09/24/1997CN1160091A Czochralski growing apparatus suppressing growth striation of long large-diameter monocrystalline silicon
09/17/1997EP0795632A1 Method of manufacturing silicon monocrystal, and seed crystal used in the method
09/17/1997EP0795631A1 Scintillation crystals having reduced afterglow and method of making the same
09/16/1997US5667588 Single crystal pulling apparatus
09/16/1997US5667585 Method for the preparation of wire-formed silicon crystal
09/16/1997US5667584 Method for the preparation of a single crystal of silicon with decreased crystal defects
09/16/1997US5667583 No cracking, smooth side face
09/12/1997WO1997033305A1 Silicon single crystal and process for producing single-crystal silicon thin film
09/11/1997DE19608375A1 Single crystal pulling apparatus permits rapid and shudder-free closure of the opening at lock chamber base
09/11/1997DE19608374A1 Single crystal pulling apparatus
09/09/1997US5665159 System for controlling growth of a silicon crystal
09/04/1997WO1997032375A1 Laser material
09/04/1997WO1997032059A1 Method and apparatus for withdrawing single crystal
09/04/1997DE19708025A1 Recovery and purification of argon from silicon crystal growing oven
09/03/1997EP0792953A1 Seed crystal holder
09/03/1997EP0792952A1 Method of manufacturing silicon moncrystal using continuous czochralski method
09/03/1997EP0591525B1 Device for pulling up single crystal
08/1997
08/27/1997CN1035730C Imitation emerald
08/26/1997US5660629 Apparatus for detecting the diameter of a single-crystal silicon
08/26/1997US5660627 Method of growing lutetium oxyorthosilicate crystals
08/24/1997CA2198064A1 Scintillation crystals having reduced afterglow and methods of making the same
08/21/1997WO1997030195A1 Apparatus and method for producing crystals by the czochralski method and crystals produced by this method
08/21/1997DE19705022A1 Boron nitride crucible with specified absorption coefficient
08/20/1997EP0790333A1 Apparatus and method for manufacturing single crystals
08/20/1997CN1157342A Method for preparing molten silicon melt from polycrystalline silicon charge
08/14/1997WO1997029224A1 Apparatus for forming a single crystal and method of forming a single crystal by using this apparatus
08/14/1997DE3890368C2 Appts. for growing extended length tubular crystalline bodies
08/12/1997US5656079 Statement of government interest
08/12/1997US5656078 Non-distorting video camera for use with a system for controlling growth of a silicon crystal
08/07/1997DE19703620A1 Single crystal pulling apparatus
08/06/1997EP0787838A1 Method of manufacturing single crystal of silicon
08/06/1997EP0787837A1 Method for feeding granular silicon material, feed pipe used in the method, and method of manufacturing a silicon monocrystal
08/06/1997EP0787836A2 Method for preparing silicon melt from polycrystalline silicon charge
08/06/1997CN1156484A Improvement in crystal growth
08/05/1997US5653799 Method for controlling growth of a silicon crystal
07/1997
07/30/1997EP0786542A1 Cesium-lithium borate crystal
07/30/1997EP0786022A1 Cast dopant for crystal growing
07/24/1997WO1997026393A1 Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same
07/24/1997WO1997026392A1 Process for producing silicon single crystal reduced in crystal defect and silicon single crystal produced by the process
07/23/1997EP0785298A1 Rapid cooling of cz silicon crystal growth system
07/17/1997DE19700517A1 Modified Czochralski single crystal growth process
07/17/1997DE19700516A1 Czochralski-type single crystal pulling apparatus
07/17/1997DE19700498A1 Czochralski single crystal growth with continuous charging
07/17/1997DE19700403A1 Czochralski-type single crystal pulling apparatus
07/15/1997US5647904 Method for manufacturing superconducting ceramics in a magnetic field
07/09/1997EP0783047A1 Crystal Pulling Apparatus
07/09/1997EP0783046A1 Method and apparatus of drawing a single crystal
07/03/1997DE19654248A1 Crystal pulling apparatus
07/03/1997DE19654220A1 Single crystal pulling apparatus for growing silicon ar gallium arsenide in Czochralski method
07/03/1997DE19548845A1 Czochralski single crystal pulling apparatus
07/02/1997EP0781876A1 Method and apparatus for production of single crystal
07/02/1997EP0781875A2 Crystal holding apparatus
07/02/1997EP0781874A2 Apparatus for producing silicon single crystal
07/02/1997EP0781873A2 Apparatus for measuring weight of crystal being pulled
07/02/1997EP0781872A2 Apparatus and method for adjusting initial position of melt surface
07/02/1997EP0781871A2 Heater mechanism for crystal pulling apparatus
07/02/1997EP0781870A2 Crystal pulling apparatus
07/02/1997EP0781869A1 Method and mechanism for lifting gas flow-guide cylinder of a crystal pulling apparatus
07/02/1997EP0781868A2 A single crystal growing apparatus
07/02/1997EP0781867A1 Method, mechanism and jig for member handling in a crystal pulling apparatus
07/02/1997EP0781866A2 An apparatus and a method for growing a single crystal
06/1997
06/24/1997US5641354 Puller cell
06/24/1997US5641353 Low hydrogen-content silicon crystal with few micro-defects caused from annealing
06/19/1997WO1997021853A1 Single crystal production apparatus and process
06/18/1997EP0778934A1 Apparatus for weighing a grown crystal
06/18/1997CN1152037A Method for improving zero dislocation yield of single crystals
06/17/1997US5640408 Diodes; detectors
06/04/1997EP0776997A1 Device and method for changing czochralski crucible rotation rate
05/1997
05/27/1997US5632811 Method of retaining melt of oxide
05/21/1997EP0774536A1 Non-distorting video camera for use with a system for controlling growth of a silicon crystal
05/20/1997US5631511 Gear motor with an electric motor having a hollow shaft
05/14/1997CN1149634A Surface treated crucible for improving undislocation performance
05/13/1997US5629216 Method for producing semiconductor wafers with low light scattering anomalies
05/13/1997US5628823 Process for eliminating dislocations in the neck of a silicon single crystal
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