Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23F - Non-mechanical removal of metallic material from surfaces; Inhibiting corrosion of metallic material; Inhibiting incrustation in general; Multi-step processes for surface treatment of metallic material involving at least one process provided for in class and at least one process covered by subclass  or or class › C23F 4 - Processes for removing metallic material from surfaces, not provided for in group or
Patents for C23F 4 - Processes for removing metallic material from surfaces, not provided for in group or (4,769)
04/1990
04/24/1990US4919750 Dry etching yields highly volatile metal chlorides
04/24/1990US4919748 Metal layers including aluminum with gas mixture of chlorine and trifluoromethane
04/18/1990EP0363648A1 Method and apparatus for forming or modifying cutting edges
04/10/1990US4915779 Aluminum-copper and protective coating without breaking vacuum
04/10/1990US4915777 Method for etching tungsten
04/10/1990CA1267528A1 Apparatus for cleaning the inner surface of a pipeline from deposits and for forming a protective coating
04/05/1990WO1990003455A1 Method and apparatus for forming or modifying cutting edges
04/04/1990EP0205557B1 Process for fabricating a device
03/1990
03/28/1990EP0360534A2 Microwave plasma treatment apparatus
03/28/1990EP0359966A2 Device for reactive ion etching
03/28/1990EP0359777A1 Process for etching with gaseous plasma.
03/27/1990US4911784 Decoupling magnetic field from substrate; applying etching potential
03/21/1990EP0359153A2 Split-phase driver for plasma etch system
03/20/1990US4910043 Processing apparatus and method
03/20/1990US4909895 System and method for providing a conductive circuit pattern utilizing thermal oxidation
03/20/1990US4909862 Process for ion nitriding aluminum material
03/13/1990US4908095 Supporting object on first electrode, pushing object into holding member between first and second electrodes, generating plasma while supplying reaction gases into gap between electrodes, etching object
02/1990
02/28/1990CN1040122A Large area microwave plasma apparatus
02/20/1990US4901667 Surface treatment apparatus
02/14/1990EP0354463A2 Dry etching method for refractory metals and compounds thereof
02/07/1990EP0353245A1 Method and apparatus for ion etching and deposition
01/1990
01/25/1990WO1990000630A1 Fe-Mn-Al-C ALLOYS AND THEIR TREATMENT
01/25/1990WO1990000476A1 Planarized interconnect etchback
01/23/1990US4896044 Scanning tunneling microscope nanoetching method
01/16/1990US4893584 Large area microwave plasma apparatus
01/10/1990EP0350363A1 Process and appliance for determining the impedance of a discharge in a plasma reacteur
01/10/1990CN1038673A Microwave plasma treating apparatus
12/1989
12/28/1989EP0331718A4 Multiple electrode plasma reactor power distribution system.
12/27/1989CN1038311A Treatment process for metallic anode reclamation
12/26/1989US4889605 Plasma pinch system
12/26/1989US4889588 Plasma etch isotropy control
12/20/1989EP0346931A2 Process for ion nitriding aluminum material
12/13/1989EP0346168A1 Plasma reactor
12/13/1989EP0346131A2 Dry etching apparatus
12/12/1989US4887005 Multiple electrode plasma reactor power distribution system
12/05/1989US4885054 Etching method
11/1989
11/29/1989EP0343602A2 Microwave plasma treating apparatus
11/29/1989EP0343502A2 Method and system for clamping semiconductor wafers
11/28/1989US4883560 Plasma treating apparatus for gas temperature measuring method
11/23/1989EP0342940A2 Substrate cooling apparatus and method for same
11/16/1989WO1989011206A1 Plasma reactor
11/07/1989US4878994 Titanium, titanium-oxygen, titanium silicide, free radicals, plasma
11/07/1989US4878993 Method of etching thin indium tin oxide films
10/1989
10/31/1989US4877482 Removing nitride coatings from metal surfaces using a gaseous plasma containing a reactive fluorine species
10/10/1989US4872944 Process for the control in real time of the selectivity of the etching by analysis of the plasma gases in a process of reactive ionic etching and a reactor therefore
10/04/1989EP0335675A2 Large area microwave plasma apparatus
10/03/1989US4871421 Split-phase driver for plasma etch system
10/03/1989US4870751 Nucleation, ablation
09/1989
09/21/1989DE3843230C1 Process for making a metallic pattern on a base, in particular for the laser structuring of conductor tracks
09/13/1989EP0331718A1 Multiple electrode plasma reactor power distribution system
09/05/1989US4863558 Method for etching tungsten
09/05/1989US4863549 Apparatus for coating or etching by means of a plasma
08/1989
08/30/1989EP0329787A1 Method and device for laser processing of an object
08/29/1989US4861423 Dry plasma etching with ammonia and nitrogen mix; forming semiconductor lasers, telecommunications
08/23/1989EP0329179A2 Plasma treating apparatus and gas temperature measuring method
08/22/1989US4859277 Method for measuring plasma properties in semiconductor processing
08/09/1989EP0327336A2 Electronic devices incorporating carbon films
08/09/1989EP0326824A2 Particle source for a reactive ion beam etching or plasma deposition device
08/09/1989CN1034636A Method of manufacturing thin film of oxidic superconducting material in accordance with pattern
08/08/1989US4855049 Intersecting pore networks; controlled energy levels; filters
08/08/1989US4855016 Method for etching aluminum film doped with copper
08/01/1989US4853081 Process for removing contaminant
08/01/1989US4853080 Lift-off process for patterning shields in thin magnetic recording heads
07/1989
07/26/1989EP0324996A1 Method of manufacturing a thin film of an oxidic superconducting material in accordance with a pattern
07/25/1989US4851668 Ion source application device
07/18/1989US4849376 Coating with refractory metal, masking, etching using carbon tetrafluoride, oxygen mixture
07/18/1989US4849067 Sulfur containing fluorine, silicon containing fluorine gas, bromine, radio frequency
07/04/1989US4844774 Phototreating method and apparatus therefor
07/04/1989US4844767 Controlling alternating current bias in microwave plasma etching
06/1989
06/28/1989EP0322244A2 Self-limiting mask undercut process
06/27/1989US4842687 Method for etching tungsten
06/27/1989US4842676 Generating in situ plasma mixture of sulfur fluoride, hydrogen bromide and hydrocarbon under low pressure
06/20/1989US4840702 Apparatus and method for plasma treating of circuit boards
06/15/1989WO1989005515A1 Plasma pinch system and method of using same
06/13/1989US4839311 Etch back detection
06/13/1989US4838992 Method of etching aluminum alloys in semi-conductor wafers
06/13/1989US4838990 Using gas mixture of fluorine source, fluorosilane, bromine source, weak oxygen source
06/06/1989US4836905 Processing apparatus
05/1989
05/30/1989US4834835 Glass fiber reinforcement, dry etching
05/30/1989US4834834 Laser photochemical etching using surface halogenation
05/24/1989EP0317399A1 Microporous membrane and method of preparing by irradiation on both sides
05/09/1989US4828649 Remote and in situ plasma of helium, boron trichloride and chlorine
05/05/1989WO1989003899A1 Etching process using metal compounds
05/03/1989EP0313855A2 Process for removing contaminant
04/1989
04/25/1989US4824690 Pulsed plasma process for treating a substrate
04/11/1989US4820377 Method for cleanup processing chamber and vacuum process module
04/05/1989EP0309773A1 Method of plasma etching metals that form usually low volatility chlorides
04/05/1989EP0309648A1 Apparatus for coating or etching by means of a plasma
03/1989
03/29/1989EP0308854A1 Desmear and etchback using NF3/O2 gas mixtures
03/28/1989US4816113 Method of eliminating undesirable carbon product deposited on the inside of a reaction chamber
03/23/1989WO1989002695A1 Multiple electrode plasma reactor power distribution system
03/09/1989WO1989001841A1 Method and device for laser processing of an object
03/07/1989US4810935 Method and apparatus for producing large volume magnetoplasmas
03/07/1989US4810322 Uniformity of etch rate
03/01/1989EP0305269A1 Process for the real-tame control of the etching selectivity by analysis of the plasma gases in a reactive ion etching process, and reactor for carrying it out
03/01/1989EP0305268A1 Process for reactive ion etching at a low self-biasing voltage using additives of inert gases
03/01/1989EP0304729A1 Etch back detection
01/1989
01/24/1989US4799451 Chemical vapor processing apparatus
01/18/1989EP0299247A1 Processing apparatus and method
01/17/1989US4798650 Tapering, reactive ion
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