Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
06/2006
06/28/2006CN1262000C Self-aligned magnetic clad write line and manufacturing method thereof
06/27/2006US7068536 Magnetic random access memory, and production method therefor
06/27/2006US7068535 Magnetic spin based memory with semiconductor selector
06/27/2006US7068532 Magnetic storage device, writing method for magnetic storage device and manufacturing method for magnetic storage device
06/27/2006US7068479 Magnetoresistance effect element comprising nano-contact portion not more than a fermi length, and magnetic head utilizing same
06/27/2006US7068477 Magnetoresistive film with nickel iron alloy soft magnetic layer having face and body-centered cubic lattice crystals
06/27/2006US7068476 Magnetic sensing element having no variation in track width and capable of properly complying with track narrowing
06/27/2006US7067923 Semiconductor device having hall-effect and manufacturing method thereof
06/27/2006US7067863 Magnetic memory with self-aligned magnetic keeper structure
06/27/2006US7067429 Processing method of forming MRAM circuitry
06/27/2006US7067380 Semiconductor device and manufacturing method therefor
06/27/2006US7067331 Method of making amorphous alloys for semiconductor device
06/22/2006US20060132987 Magnetic random access memory
06/22/2006DE19528245B4 Magneto-Widerstandskopf und dessen Verwendung in einer Magnetaufzeichnungsvorrichtung A magneto-resistive head and its use in a magnetic recording device
06/21/2006EP1671330A1 Magnetic tunnel junction device and writing/reading method for said device
06/21/2006EP1356469B1 Mtj mram series-parallel architecture
06/21/2006EP1287371B1 Magnetic field sensor
06/21/2006CN1790542A Diamond-shaped magnetic RAM memory unit
06/21/2006CN1790045A Magnetic impedance device, sensor apparatus using the same and method for manufacturing the same
06/21/2006CN1790044A Magnetic sensor
06/21/2006CN1260574C Estimating method and device for hot-line electrical potential
06/21/2006CN1260565C Biosensor
06/20/2006US7064976 Method of operating a stacked spin based memory
06/20/2006US7064936 Magnetoresistance effect device
06/20/2006US7064934 Magnetoresistive sensor with reduced operating temperature
06/20/2006US7064649 Magneto-resistive layer arrangement and gradiometer with said layer arrangement
06/20/2006US7064402 Magnetic random access memory
06/20/2006US7064367 Magnetoresistive element, magnetic memory cell, and magnetic memory device
06/20/2006US7063986 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device
06/20/2006US7063985 Method for fabricating sensor devices having improved switching properties
06/20/2006US7063904 Exchange coupling film, magnetic detecting element using the exchange coupling film, and method of making same
06/15/2006WO2006062150A1 Magnetic random access memory
06/15/2006US20060128037 Method of manufacturing a magnetic tunnel junction device
06/15/2006US20060128035 Sensor and method for measuring the areal density of magnetic nanoparticles on a micro-array
06/15/2006US20060127701 Method of manufacturing a device with a magnetic layer-structure
06/15/2006US20060126232 Ferromagnetic tunnel magnetoresistive devices and magnetic head
06/15/2006US20060126230 Magnetoresistance effect element, magnetic head and magnetic reproducing system
06/15/2006US20060125034 Magnetoresistant device and magnetic memory device further comments
06/15/2006US20060124978 Spin valve transistor with stabilization and method for producing the same
06/14/2006DE10260344B4 Magnetische Dünnfilmspeichervorrichtung, die Daten mit bidirektionalem Strom schreibt Thin film magnetic memory device which writes data with bidirectional current
06/13/2006US7061796 Thin film magnetic memory device for programming required information with an element similar to a memory cell information programming method
06/13/2006US7061730 Robust hard bias/conductor lead structures for future GMR heads
06/13/2006US7061727 Magnetoresistive head using multilayered varistor material
06/13/2006US7061232 Position transmitter with at least one magnetoresistive sensor and associated magnetic multipole wheel
06/13/2006US7061034 Magnetic random access memory including middle oxide layer and method of manufacturing the same
06/13/2006US7060586 PCMO thin film with resistance random access memory (RRAM) characteristics
06/13/2006US7060321 Preventing short circuiting by inserting a high permeability ferromagnetic material, high electrical resistivity, thin film shield on the top or bottom sides; improve linear resolution; nickel-iron-chromium permalloy; read sensor in a magnetic disk system
06/13/2006US7060194 Dry etching method for magnetic material
06/08/2006WO2006059641A1 Magnetic memory
06/08/2006US20060121630 Methods of forming semiconductor constructions
06/08/2006US20060121629 Methods of forming semiconductor constructions
06/08/2006US20060120146 Magnetic memory device, sense amplifier circuit and method of reading from magnetic memory device
06/08/2006US20060120145 Magnetic memory device and method of reading the same
06/08/2006US20060119989 Spin valve magnetoresistive sensor having cpp structure
06/08/2006US20060118845 Techniques for coupling in semiconductor devices
06/08/2006DE10308640B4 Magneto-resistives Schichtelement, insbesondere TMR-Zelle Magneto-resistive layer element, in particular TMR cell
06/08/2006DE102005051306A1 Vertikale Hallvorrichtung und Verfahren zur Einstellung der Offsetspannung einer vertikalen Hallvorrichtung Vertical Hall device and method for adjusting the offset voltage of a vertical Hall device
06/07/2006EP1667215A1 Dry etching process and method for manufacturing magnetic memory device
06/07/2006EP1667118A1 Magnetic head of a magnetoresistance type having an underlying layer having a laminated structure of a tungsten-group metal layer formed on a tantalum-group metal layer
06/07/2006EP1667117A1 Magnetic head of a magnetoresistance type having an underlying layer having a laminated structure of a tungsten-group metal layer formed on a tantalum-group metal layer
06/07/2006EP1666906A1 Magnetic sensor
06/07/2006EP1665388A2 High speed low power magnetic devices based current induced spin-momentum transfer
06/07/2006EP1046047B1 Magnetoresistive sensor element with selective magnetization direction of the bias layer
06/07/2006CN1783337A Magnetic random access memory
06/07/2006CN1783336A Antiferromagnetic/paramagnetic resistive device,non-volatile memory and method for fabricating the same
06/07/2006CN1783335A Magnetoresistive structures, magnetoresistive element, and storage unit
06/07/2006CN1783334A Magnetic memory and method of manufacturing the same
06/07/2006CN1783333A Magnetic random storage element and its producing method
06/06/2006US7057925 Thin film magnetic memory device conducting read operation by a self-reference method
06/06/2006US7057862 Current-perpendicular-to-plane-magnetoresistive sensor with free layer stabilized against vortex magnetic domains generated by the sense current
06/06/2006US7057861 Electromagnetic transducer laminate with different widths for the semi-hard magnetic layer and the first ferromagnetic layer
06/06/2006US7057860 Magnetic tunnel effect type magnetic head having a magnetic tunnel junction element, and recorder/player
06/06/2006US7057859 Magneto-resistive device with reduced susceptibility to ion beam damage
06/06/2006US7056749 Simplified magnetic memory cell
06/01/2006WO2006057379A1 Thin film magnetic resistor element and method for manufacturing it, and magnetic sensor using thin film magnetic resistor element
06/01/2006US20060115918 Method for manufacturing a magnetic field detecting element
06/01/2006US20060114716 Magnetoresistance element, magnetic memory, and magnetic head
06/01/2006US20060114098 Current sensor
06/01/2006US20060114097 PTC circuit protector having parallel areas of effective resistance
06/01/2006US20060114096 Quantum junction device as switch and detector
06/01/2006US20060113619 Magnetic random access memory with reference magnetic resistance and reading method thereof
06/01/2006DE10223179B4 Widerstandsbauelement und Verfahren zum Betreiben des Widerstandsbauelements Resistance component and method of operating the resistance component
05/2006
05/31/2006EP1661188A2 Magnetoresistive random access memory with reduced switching field variation
05/31/2006CN1779851A Storage and semiconductor device
05/30/2006US7054190 Logic-in-memory circuit using magnetoresistive element
05/30/2006US7054186 Magnetic random access memory
05/30/2006US7054120 Magnetic apparatus with perpendicular recording medium and head having multilayered reproducing element using tunneling effect
05/30/2006US7054115 Spin-valve thin-film magnetic element and method for making the same
05/30/2006US7053609 Magnetic sensor with pointing control circuit
05/30/2006US7053600 Current sensor
05/30/2006US7053430 Antiferromagnetic stabilized storage layers in GMRAM storage devices
05/30/2006US7053429 Bias-adjusted giant magnetoresistive (GMR) devices for magnetic random access memory (MRAM) applications
05/26/2006WO2006054588A1 Magnetic memory and manufacturing method thereof
05/26/2006WO2006054469A1 Ferromagnetic film, magnetic resistance element and magnetic random access memory
05/25/2006US20060110625 Magnetic sensing element with improved magnetic sensitivity stability and method for producing the same
05/25/2006US20060109592 Magnetic head and magnetic recording/reproducing system
05/25/2006US20060108655 MRAM layer having domain wall traps
05/25/2006US20060108654 Hall sensor and method for the operation thereof
05/24/2006EP1659645A1 Tunnel junction element
05/24/2006EP1659631A2 Magnetic random access memory with stacked toggle memory cells
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