Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
09/2006
09/14/2006US20060202291 Magnetoresistive sensor module and method for manufacturing the same
09/14/2006US20060202290 Magnetic tunnel junction structure with amorphous CoFeSiB or NiFeSiB free layer
09/14/2006DE102005047413A1 Magnetoresistives Sensorelement und Konzept zum Herstellen und Testen desselben The magnetoresistive sensor element and concept for making and testing the same
09/14/2006DE102005008724A1 Magnetic field sensor for measuring magnetic field has first hall probe, which is so designed that first Hall current flows in first Hall current direction when first input signal is applied to first entrance
09/13/2006EP1701356A1 Memory cell and memory device
09/13/2006CN2817078Y Magnetic conductive metal proximity transducer
09/13/2006CN1833320A Minute magnetic body having annular single magnetic domain structure, manufacturing method thereof, or magnetic recording element using the same
09/12/2006US7106624 Magnetic element utilizing spin transfer and an mram device using the magnetic element
09/12/2006US7106560 Magnetic sensor with second antiferromagnetic layer having smaller depth in height direction than free layer
09/12/2006US7106559 The magnetization vector of the ferromagnetic layer is oriented in a particular direction by an exchange coupling magnetic field generated at the interface between the antiferromagnetic layer and the ferromagnetic layer
09/12/2006US7105903 Methods and structures for electrical communication with an overlying electrode for a semiconductor element
09/12/2006US7105879 Write line design in MRAM
09/12/2006US7105372 Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
09/12/2006US7105363 Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
09/12/2006US7103962 Method for manufacturing a thin film head
09/08/2006WO2006092849A1 Magnetoresistive element and magnetic memory
09/07/2006US20060197168 Semiconductor device, magnetic sensor, and magnetic sensor unit
09/07/2006DE102004042338B4 MRAM mit verbesserten Speicher- und Ausleseeigenschaften MRAM with improved storage and readout characteristics
09/06/2006EP1697996A2 Synthetic antiferromagnet structures for use in mtjs in mram technology
09/06/2006EP1697924A1 Method for ultra-fast controlling of a magnetic cell and related devices
09/06/2006CN1828866A Storage device amd method for forming storage
09/06/2006CN1828769A Multi-bit magnetic memory device using spin-polarized current and methods of manufacturing and operating the same
09/05/2006US7102948 Resistance change sensor
09/05/2006US7102923 High output nonvolatile magnetic memory
09/05/2006US7102922 Thin film magnetic memory device capable of conducting stable data read and write operations
09/05/2006US7102920 Soft-reference three conductor magnetic memory storage device
09/05/2006US7102918 MRAM having two write conductors
09/05/2006US7102858 Thin-film electrode layer including β-ta and thin-film magnetic head using the same
08/2006
08/31/2006WO2006090656A1 Magnetoresistive element based on magnetic domain wall shift by pulse current and high-speed magnetic recording device
08/31/2006WO2006090496A1 Ferromagnetic conductor material and method for production thereof, and magnetic resistance element and field-effect transistor
08/31/2006US20060194403 PCMO thin film with controlled resistance characteristics
08/31/2006US20060193165 Magnetoresistive element and magnetic memory device
08/31/2006US20060192304 Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers
08/31/2006US20060192237 Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
08/31/2006US20060191130 Current-perpendicular-to-the-plane structure magnetoresistive element and method of making same
08/31/2006DE10249869B4 Magnetische Dünnfilmspeichervorrichtung zum Durchführen eines Datenschreibvorgangs durch Anlegen eines Magnetfelds Thin film magnetic memory device for performing a data write operation by applying a magnetic field
08/31/2006DE102006000028A1 Hall-Element und dessen Herstellungsverfahren Hall element and its production method
08/30/2006CN1826672A Method of manufacturing a device with a magnetic layer-structure
08/30/2006CN1272771C 传感器及其制造方法 Sensor and manufacturing method thereof
08/29/2006US7099185 Magnetic memory array, method for recording in a magnetic memory array and method for reading out from a magnetic memory array
08/29/2006US7099126 Ferromagnetic tunnel magnetoresistive devices and magnetic head
08/29/2006US7099124 Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head
08/29/2006US7098494 Re-configurable logic elements using heat assisted magnetic tunneling elements
08/29/2006US7097777 Magnetic switching device
08/24/2006US20060187704 Spin based sensor device
08/24/2006US20060187703 Magnetoresistive effect element, magentic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device
08/24/2006US20060187592 Magnetoresistive film having reduced electric resistance
08/24/2006US20060186985 Method of manufacturing a magnetoresistive head with spin-valve film
08/24/2006US20060186496 System and method for processing a wafer including stop-on-alumina processing
08/24/2006US20060186495 Low power magnetoelectronic device structures utilizing enhanced permeability materials
08/24/2006US20060186445 Bias-adjusted giant magnetoresistive (GMR) devices for magnetic random access memory (MRAM) applications
08/24/2006US20060186433 Surface-spintronics device
08/24/2006DE10220981B4 Sensor für schwach magnetische Felder unter Verwendung der Herstellungstechnik für gedruckte Leiterplatten und Verfahren zum Herstellen eines solchen Sensors Sensor for weak magnetic fields using the manufacturing technology for printed circuit boards and methods for manufacturing of such a sensor
08/24/2006DE102005047414A1 Magneto-resistive sensor module manufacturing method for e.g. anti-skid system, involves forming connection between sensor structure and support for connection of structure to circuit arrangement
08/23/2006EP1527519B1 Rotary switch
08/23/2006EP1129495B1 Integrated hall device
08/23/2006CN1822408A Manganese oxide heterogeneous film and its preparing method
08/23/2006CN1822320A Method for preparing GaN base diluted magnetic semiconductor material
08/23/2006CN1822219A Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same
08/23/2006CN1271655C Detection switch
08/22/2006US7095650 Magnetic memory device and method for production thereof
08/22/2006US7095649 Semiconductor integrated circuit device
08/22/2006US7095646 Multi-state magnetoresistance random access cell with improved memory storage density
08/22/2006US7095071 Magnetic random access memory
08/22/2006US7095070 Method for fabricating Bi thin film and device using the same
08/22/2006US7094480 Magnetic field sensor using magnetoresistance and method for making same
08/17/2006WO2006085545A1 Toggle magnetic random access memory and toggle magnetic random access memory write method
08/17/2006US20060181814 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
08/17/2006US20060180884 Material and uses thereof
08/16/2006EP1046049B1 Device comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer
08/16/2006CN1820375A Self-aligned conductive lines for FET-based magnetic random access memory devices and method of forming it
08/16/2006CN1819077A Polycrystalline FeO thin-film materials and production thereof
08/16/2006CN1819027A Evaluation method of film magnetic head
08/16/2006CN1270385C Magnetic RAM of transistor with vertical structure and making method thereof
08/15/2006US7092282 Semiconductor integrated circuit device
08/15/2006US7092225 Magnetic tunnel effect type magnetic head, and method of producing same
08/15/2006US7092224 Magnetic tunnel effect type magnetic head, and method of producing same
08/15/2006US7092223 Current-perpendicular-to-the-plane structure magnetoresistive element and method of making same
08/15/2006US7092217 Magnetoresistive head
08/15/2006US7091539 Magnetic random access memory
08/15/2006US7089650 Method of manufacturing integrated spin valve head
08/15/2006US7089648 Method for fabricating a magnetoresistive head
08/10/2006US20060177947 Magnetoresistive random-access memory device
08/10/2006US20060176142 Magnetic sensor and manufacturing method therefor
08/10/2006US20060175675 Double-decker MRAM cell with rotated reference layer magnetizations
08/10/2006US20060175674 Integrated sensor having a magnetic flux concentrator
08/09/2006EP1689006A2 Multi-bit magnetic memory device using spin-polarized current and methods of manufacturing and operating the same
08/09/2006EP1688923A2 Method for increasing the coupling strength of a sensor and sensor for a reading head
08/09/2006EP1509922B1 Mram-cell and array-architecture with maximum read-out signal and reduced electromagnetic interference
08/09/2006CN1816503A Ferromagnetic material
08/09/2006CN1815769A Magnetoresistance device and method of fabrication using titanium nitride as capping layer
08/09/2006CN1815623A Magnetoresistance random access memory array
08/09/2006CN1269133C Film magnet memory making data write by bidirection data writing in magnetic field
08/08/2006US7088610 Magnetic memory apparatus and method of manufacturing magnetic memory apparatus
08/08/2006US7087450 Fabricating method for a fluxgate sensor integrated in printed circuit board
08/08/2006US7086141 Manufacturing method of magnetoresistive effect sensor
08/03/2006WO2006080571A1 Magnetic sensor
08/03/2006WO2006080558A1 Magnetic material sensor and detection method employing this sensor, and target material detection sensor and target material detection kit
08/03/2006WO2006055179A3 Methods and structures for electrical communication with an overlying electrode for a semiconductor element
08/03/2006US20060171196 Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method
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