H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof

Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
11/2006
11/08/2006	EP1720027A1 Magnetic field detector, and current detection device, position detection device and rotation detection devices using the magnetic field detector
11/08/2006	CN1284208C Semiconductor device and producing method thereof
11/08/2006	CN1284144C Magnetoresistance effect film, magnetoresistance effect head and solid state memory
11/07/2006	US7133312 Readout circuit for semiconductor memory device based on a number of pulses generated by a voltage-controlled oscillator
11/07/2006	US7132299 Method of forming a magnetic random access memory structure
11/07/2006	US7132175 GMR magnetic detecting element comprising current limiting layer provided in free magnetic layer and method of manufacturing the detecting element
11/02/2006	WO2006115275A1 Mram and method for writing in mram
11/02/2006	WO2006115208A1 Memory device and semiconductor integrated circuit
11/02/2006	US20060246692 Semiconductor sensor and method for manufacturing same
11/02/2006	US20060245118 Control of MTJ tunnel area
11/02/2006	EP1716561A2 Spin transfer magnetic element having low saturation magnetization free layers
11/01/2006	CN1855296A Mram arrays and methods for writing and reading magnetic memory devices
11/01/2006	CN1283006C Magnetic storage device and mfg. method
10/2006
10/31/2006	US7130168 Synthetic free layer for CPP GMR
10/31/2006	US7130164 Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance
10/31/2006	US7130162 Magnetic sensor and method of manufacturing the same
10/31/2006	US7129555 Magnetic memory with write inhibit selection and the writing method for same
10/31/2006	US7129534 Magneto-resistive memory and method of manufacturing the same
10/26/2006	WO2006112119A1 Ferromagnetic dual tunnel junction element and magnetic device
10/26/2006	WO2006112049A1 Magnetic random access memory
10/26/2006	US20060240992 Device having a structural element with magnetic properties, and method
10/26/2006	US20060239067 Thin film magnetic memory device for writing data of a plurality of bits in parallel
10/26/2006	US20060237808 Spin injection magnetic domain wall displacement device and element thereof
10/26/2006	US20060237807 Electro-optic transducer die including a temperature sensing PN junction diode
10/25/2006	CN1851823A Magnetic random access memory device
10/25/2006	CN1851822A Magnetic random access memory device
10/25/2006	CN1851807A Magnetoresistive structures
10/25/2006	CN1282239C High density reluctance random access memory unit and manufacture method thereof
10/25/2006	CN1282197C Magnetic random-access storage device and reading method thereof
10/25/2006	CN1281969C Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using same
10/24/2006	US7126845 Memory device capable of performing high speed reading while realizing redundancy replacement
10/24/2006	US7126843 Semiconductor memory device using magnetoresistive effect
10/24/2006	US7126797 Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated film having magnetic sublayers and nanomagnetic interlayer
10/24/2006	US7126795 Magnetic recording head, a magnetic reproducing head, a magnetic recording apparatus, and a magnetic reproducing apparatus
10/19/2006	WO2006109384A1 Position detector and positioning device
10/19/2006	WO2005079528A3 Spin transfer magnetic element having low saturation magnetization free layers
10/19/2006	WO2004114312A3 Magnetic memory device on low-temperature substrate
10/19/2006	US20060234397 Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers
10/18/2006	EP1552526B1 Magnetic element utilizing spin transfer and an mram device using the magnetic element
10/18/2006	EP1135772B1 Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor
10/18/2006	CN1280831C 磁存储器 Magnetic memory
10/18/2006	CN1280829C Magnetic storage device
10/18/2006	CN1280788C Fabrication of magnetoresistance sensor structure having spacer layer produced by multiple position and oxidation steps
10/17/2006	US7123539 Memory modules with magnetoresistive elements and method of reading data from row or column directions
10/17/2006	US7123505 Method of reading information in a magnetic memory by a reversible resistance change in a magnetic tunnel junction
10/17/2006	US7123498 Non-volatile memory device
10/17/2006	US7123456 Method of making magnetoresistive head element
10/17/2006	US7123453 Exchange coupling film and magnetoresistive element using the same
10/17/2006	US7122854 Semiconductor memory device comprising magneto resistive element and its manufacturing method
10/17/2006	US7122852 Structure/method to fabricate a high performance magnetic tunneling junction MRAM
10/17/2006	US7122385 Magnetic memory device having magnetic circuit and method of manufacture thereof
10/12/2006	US20060227600 Non-Volatile Memory Device
10/12/2006	US20060226835 Methods for manufacturing a thin film magnetic sensor
10/10/2006	US7119998 Exchange coupling film and magnetoresistive element using the same
10/10/2006	US7119996 Exchange coupling film and magnetoresistive element using the same
10/10/2006	US7119539 Arrangement for determining the position of a motion sensor element
10/10/2006	US7119538 Offset-reduced hall sensor
10/10/2006	US7119419 Detailed description of the presently preferred embodiments
10/10/2006	US7119410 Magneto-resistive effect element and magnetic memory
10/10/2006	US7119388 MRAM device fabricated using chemical mechanical polishing
10/05/2006	WO2006104002A1 Magnetic random access memory
10/05/2006	US20060220781 Tunneling effect element and physical quantity to electrical quantity transducer
10/05/2006	US20060220162 Spin tunnel transistor
10/05/2006	US20060220161 Spin-injection FET
10/05/2006	DE19622561B4 Halleffekt-Sensor Hall-effect sensor
10/05/2006	DE102006008257A1 Magnetoresistive multi-layer system of spin-valve type comprising magnetically softer electrode composed of several layers rotable in external magnetic field and able to be aligned to produce linear resistance
10/04/2006	EP1708257A1 Current injection magnetic domain wall moving element
10/04/2006	EP1068541B1 Magnetic digital signal coupler
10/04/2006	CN1842874A Magnetic memory element utilizing spin transfer switching and storing multiple bits
10/04/2006	CN1841806A 磁性传感器及传感器器件 Magnetic sensors and sensor devices
10/04/2006	CN1278306C Magnetic resistance element, magnetic reproducing head and magnetic reproducing apparatus
10/03/2006	US7116534 Magnetoresistive head
10/03/2006	US7116533 Magnetoresistive sensor
10/03/2006	US7116529 Magnetoresistive element in which pinned magnetization layers have antiparallel pinned directions, magnetic head and magnetic recording/reproducing apparatus
10/03/2006	US7116528 Magnetoresistive element having current-perpendicular-to-the-plane structure and having improved magnetic domain control
10/03/2006	US7114240 Forming silicon dioxide layer and a plurality of magnetoresistive layers above; ferromagnetic and/or nonmagnetic layers; etch stopping with titanium nitride; surrounding with an oxygen barrier comprising silicon nitride; etching;
09/2006
09/28/2006	WO2006101040A1 Microwave transmission line integrated microwave generating element and microwave transmission line integrated microwave detecting element
09/28/2006	WO2006100779A1 Magnetic memory device and method for manufacturing same
09/28/2006	US20060216836 Method for manufacturing magnetic field detection devices and devices therefrom
09/28/2006	US20060215331 Exchange coupling film and magnetoresistive element using the same
09/28/2006	US20060214656 Angle sensor having low waveform distortion
09/27/2006	EP1704638A2 Tuneable spin torque device for generating an oscillating signal and method for tuning
09/27/2006	CN1839322A 磁传感器 Magnetic sensors
09/26/2006	US7112955 Magnetic sensing device including a magnetoresistive sensor and a supporting magnet
09/26/2006	US7112861 Magnetic tunnel junction cap structure and method for forming the same
09/21/2006	WO2006098431A1 3-axis magnetic sensor and manufacturing method thereof
09/21/2006	WO2006098372A1 High frequency interface device
09/21/2006	WO2006098367A1 Magnetic sensor and manufacturing method thereof
09/21/2006	US20060209591 MRAM cell structure and method of fabrication
09/21/2006	US20060208294 Method of manufacturing magnetic random access memory including middle oxide layer
09/21/2006	CA2601130A1 Three-axis magnetic sensor and method for manufacturing the same
09/20/2006	CN1835084A Magnetoresistive element, magnetic head, and magnetic memory apparatus
09/20/2006	CN1276436C Film magnetic storage of shared storage element between multiple storage locations
09/19/2006	US7110902 Adjustment-circuit embedded semiconductor sensor and torsion bar type torque sensor system
09/19/2006	US7110285 Magnetic memory device
09/19/2006	US7110284 Magnetic nonvolatile memory cell and magnetic random access memory using the same
09/19/2006	US7109045 Method for preparing a ring-formed body, and magnetic memory device and method for manufacturing the same
09/14/2006	WO2006095389A1 Magnetic memory and read/write method thereof
09/14/2006	US20060202691 Magnetic sensor
09/14/2006	US20060202690 Magnetic field sensing device and method for fabricating thereof

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