| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 01/22/2015 | WO2015008718A1 Magnetic sensor and method for manufacturing same |
| 01/22/2015 | US20150023092 Ring-shaped magnetoresistive memory device and writing method thereof |
| 01/22/2015 | US20150021727 Application specific integrated circuit with integrated magnetic sensor |
| 01/22/2015 | US20150021726 Method for patterning a magnetic tunnel junction stack |
| 01/22/2015 | US20150021725 Magnetoresistive random access memory structure and method of forming the same |
| 01/22/2015 | US20150021724 Self contacting bit line to mram cell |
| 01/22/2015 | US20150021675 Three-dimensional magnetic memory element |
| 01/22/2015 | US20150021606 Mram synthetic anitferomagnet structure |
| 01/22/2015 | DE102008039331B4 Integrierte Schaltung, die magnetoresistive Strukturen umfaßt, Sensor und Verfahren zum Messen eines Magnetfelds Integrated circuit comprising magnetoresistive structures, sensor and method for measuring a magnetic field |
| 01/21/2015 | EP2827395A1 Method for patterning a magnetic tunnel junction stack |
| 01/21/2015 | CN104303326A 采用压电层的自旋晶体管以及相关存储器、存储器系统和方法 Piezoelectric layers of the spin transistors and associated memory, the memory systems and methods |
| 01/21/2015 | CN104303066A 磁传感器及其磁检测方法 Magnetic sensor and magnetic detection method |
| 01/21/2015 | CN104303065A 霍尔电动势校正装置以及霍尔电动势校正方法 Hall and Hall emf electromotive force correction means Correction |
| 01/21/2015 | CN104300080A 磁阻式随机存取存储器结构及其形成方法 Magnetoresistive random access memory structure and method of forming |
| 01/21/2015 | CN104300079A 一种半导体霍尔元件 A semiconductor Hall elements |
| 01/21/2015 | CN103022344B 拓扑绝缘体结构 Topological insulator structure |
| 01/21/2015 | CN103022341B 拓扑绝缘体结构 Topological insulator structure |
| 01/21/2015 | CN103000804B 产生量子化反常霍尔效应的方法 Produce anomalous quantum Hall effect method |
| 01/20/2015 | US8937360 Beta voltaic semiconductor diode fabricated from a radioisotope |
| 01/15/2015 | US20150017743 Memory devices and methods of fabricating the same |
| 01/15/2015 | US20150017741 Plasma etching method |
| 01/15/2015 | US20150016163 Detector and a voltage converter |
| 01/15/2015 | US20150014801 Redeposition Control in MRAM Fabrication Process |
| 01/15/2015 | US20150014800 Mtj memory cell with protection sleeve and method for making same |
| 01/15/2015 | US20150014757 Semiconductor device |
| 01/15/2015 | US20150014756 Magnetoresistive element and magnetic memory |
| 01/15/2015 | DE102014109646A1 Detektor und spannungswandler Detector and voltage converters |
| 01/15/2015 | DE102014109609A1 Stromsensorvorrichtung Current sensor means |
| 01/14/2015 | CN104285291A 存储设备和存储器件 Storage devices and memory devices |
| 01/14/2015 | CN104282832A 磁性存储装置及其形成方法 Magnetic storage device and method of forming |
| 01/14/2015 | CN103299202B 磁传感器 Magnetic sensors |
| 01/13/2015 | US8934290 Magnetoresistance effect device and method of production of the same |
| 01/13/2015 | US8933542 Method to reduce magnetic film stress for better yield |
| 01/13/2015 | US8933523 Single-chip referenced full-bridge magnetic field sensor |
| 01/13/2015 | US8933522 Repeated spin current interconnects |
| 01/13/2015 | US8933521 Three-dimensional magnetic circuits including magnetic connectors |
| 01/13/2015 | US8933519 Magnetic dynamic random access nonvolatile semiconductor memory (MRAM) |
| 01/13/2015 | US8932438 Method of manufacturing magnetoresistive element, sputter deposition chamber, apparatus for manufacturing magnetoresistive element having sputter deposition chamber, program and storage medium |
| 01/08/2015 | WO2015002727A1 Hybridized oxide capping layer for perpendicular magnetic anisotropy |
| 01/08/2015 | US20150008550 Magnetic memory element |
| 01/08/2015 | US20150008549 Magnetic memory devices having junction magnetic layers and buffer layers and related methods |
| 01/08/2015 | US20150008548 Magnetic memory device |
| 01/08/2015 | US20150008547 Hybridized Oxide Capping Layer for Perpendicular Magnetic Anisotropy |
| 01/08/2015 | US20150008546 MRAM Device and Fabrication Method Thereof |
| 01/08/2015 | DE102014212651A1 Widerstandselement Resistance element |
| 01/07/2015 | CN104272129A 电桥电路以及具有其的磁传感器 Bridge circuit and having the same magnetic sensor |
| 01/07/2015 | CN102891251B 一种石墨烯霍尔元件的封装结构及封装方法 A graphene package structure and packaging method of the Hall element |
| 01/07/2015 | CN102856488B 基于可逆电致电阻效应的逻辑器件 Reversible logic devices based on electrochromic effect resistor |
| 01/07/2015 | CN102608547B 场效应磁传感器 Field-effect magnetic sensors |
| 01/06/2015 | US8929131 Magnetic memory element and non-volatile storage device |
| 01/06/2015 | US8929035 Tunnel barrier sensor with multilayer structure |
| 01/06/2015 | US8929031 Spin torque oscillator, method of manufacturing the same, magnetic recording head, magnetic head assembly, and magnetic recording apparatus |
| 01/06/2015 | US8928100 Spin transfer torque cell for magnetic random access memory |
| 01/06/2015 | US8927301 Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor |
| 01/01/2015 | US20150002984 Method of forming a magnetic mems tunable capacitor |
| 01/01/2015 | US20150001656 Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM |
| 01/01/2015 | US20150001655 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element |
| 01/01/2015 | US20150001654 Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems |
| 01/01/2015 | US20150001601 Spin injection electrode structure and spin transport element having the same |
| 12/31/2014 | CN204064315U 一种磁性隧道结传感器 A magnetic tunnel junction sensors |
| 12/31/2014 | CN104253210A 磁传感装置的制造工艺 The magnetic sensor apparatus of the manufacturing process |
| 12/31/2014 | CN104253209A 磁屏蔽、半导体器件和半导体封装 Magnetic shield, semiconductor devices and semiconductor package |
| 12/31/2014 | CN104253208A 基于半导体的霍尔传感器 Based semiconductor Hall sensor |
| 12/31/2014 | CN101911327B 形成磁性隧道结结构的方法 The method of forming a magnetic tunnel junction structure |
| 12/30/2014 | US8923044 MTP MTJ device |
| 12/30/2014 | US8923042 Magnetic random access memory |
| 12/30/2014 | US8923037 Memory element and memory device |
| 12/30/2014 | US8922950 Multi-layer magnetoresistive shield with transition metal layer |
| 12/30/2014 | US8922207 Electronic device comprising hall effect region with three contacts |
| 12/30/2014 | US8921959 MRAM device and fabrication method thereof |
| 12/25/2014 | US20140377915 Pre-mold for a magnet semiconductor assembly group and method of producing the same |
| 12/25/2014 | US20140377884 Method of fabricating a magnetic tunnel junction device |
| 12/25/2014 | US20140374860 Magnetic shield, semiconductor device, and semiconductor package |
| 12/25/2014 | US20140374752 Perpendicular magnetization storage element and storage device |
| 12/25/2014 | US20140374749 Manganese oxide thin film and oxide laminate |
| 12/24/2014 | CN104241520A 制造单片集成在半导体芯片处的磁传感器元件 Manufacturing a monolithic integrated magnetic sensor element in the semiconductor chip at the |
| 12/24/2014 | CN104241519A 提升磁材料性能的方法、磁传感装置的制备方法 Enhance the performance of a magnetic material, a method for preparing a magnetic sensing device |
| 12/24/2014 | CN104237812A 磁传感器及其制造方法 Magnetic sensor and manufacturing method thereof |
| 12/24/2014 | CN102687297B 磁阻元件的制造方法 The method of manufacturing the magnetoresistive element |
| 12/23/2014 | US8918152 Parallel fabrication of nanogaps and devices thereof |
| 12/23/2014 | US8917543 Multi-state spin-torque transfer magnetic random access memory |
| 12/23/2014 | US8917542 Unidirectional spin torque transfer magnetic memory cell structure |
| 12/23/2014 | US8917541 Magnetoresistance effect element and magnetic memory |
| 12/23/2014 | US8917531 Cell design for embedded thermally-assisted MRAM |
| 12/23/2014 | US8917485 Magnetoresistive effect element, magnetic head, and magnetic disk apparatus |
| 12/23/2014 | US8916392 Magnetoresistive random access memory element and fabrication method thereof |
| 12/18/2014 | US20140367815 Manufacturing magnetic sensor elements monolithically integrated at a semiconductor chip comprising an integrated circuit |
| 12/18/2014 | US20140367814 Storage element, storage device, method of manufacturing storage element, and magnetic head |
| 12/18/2014 | US20140367813 Magnetic sensor and method of manufacture thereof |
| 12/18/2014 | US20140367812 Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates |
| 12/17/2014 | CN104218150A 磁性随机存储器单元的形成方法 The method for forming a magnetic random access memory cells |
| 12/17/2014 | CN104218149A 磁传感器的制备方法以及磁传感器 Preparation method of a magnetic sensor and a magnetic sensor |
| 12/17/2014 | CN104218148A 磁传感器的制备方法以及磁传感器 Preparation method of a magnetic sensor and a magnetic sensor |
| 12/17/2014 | CN104218147A 磁传感器的制备方法以及磁传感器 Preparation method of a magnetic sensor and a magnetic sensor |
| 12/17/2014 | CN102881818B 霍尔传感器 Hall sensor |
| 12/17/2014 | CN102467954B 切换向平面外的磁性隧道结单元的方法 Switching to the outer plane of a magnetic tunnel junction element method |
| 12/17/2014 | CN102439745B 磁电子器件和测量方法 Electronic devices and magnetic measurements |
| 12/16/2014 | US8913424 Magnetic enhancement layer in memory cell |
| 12/16/2014 | US8913423 Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM) |
| 12/16/2014 | US8913415 Circuit and system for using junction diode as program selector for one-time programmable devices |