Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
04/1998
04/14/1998US5740193 Containing active layer comprising groups ii to vi semiconductors and dopants
04/14/1998US5739554 Double heterojunction light emitting diode with gallium nitride active layer
04/14/1998US5739553 Algainp light-emitting device
04/14/1998US5739552 Semiconductor light emitting diode producing visible light
04/09/1998WO1998015017A1 Opto-electronic module for bi-directional optical data transmision
04/09/1998WO1998015015A1 Photodetecting chip and its use
04/09/1998WO1998014986A1 Method for separating two material layers and electronic components produced therewith
04/08/1998EP0834970A2 Multi-layer mirror of compound semiconductors including nitrogen and surface light-emitting device with the same
04/08/1998EP0834929A2 Ohmic contact to n-GaN related compound semiconductor and its manufacturing method
04/08/1998CN1178418A IrDA data link with VCSEL light source
04/07/1998US5737466 Electro-optical module with simplified adjustment of the electro-optical elements
04/07/1998US5736881 Diode drive current source
04/07/1998US5736768 Semiconductor device on a substrate or a matrix display panel
04/02/1998WO1998013912A1 Method of manufacturing an optoelectronic semiconductor device comprising a mesa
04/02/1998WO1998013879A1 Extended wavelength strained layer lasers
04/02/1998DE19640594A1 Licht-induzierte Grenzflächenzersetzung zur Strukturierung und Trennung von Halbleitermaterialien Light-induced interfacial decomposition to structure and separation of semiconductor materials
04/02/1998DE19640006A1 Production of directly printed circuit board-mounted, wire-bonded optical diodes with encapsulation
04/02/1998DE19638667A1 Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement Mixing Colored light radiating semiconductor component having luminescence
04/01/1998EP0833391A1 Semiconductor device on III-V semiconductor substrate and method for fabricating it
04/01/1998CN1177655A Method for producing gallium nitride
03/1998
03/31/1998US5734671 Gainasp, optical fiber amplifiers
03/31/1998US5734406 Integrated circuit
03/31/1998US5734182 Light-emitting gallium nitride-based compound semiconducor device
03/31/1998US5734170 Driver for light emitting device
03/31/1998US5733796 Light-emitting semiconductor device using gallium nitride group compound
03/26/1998WO1998012757A1 Sealing material with wavelength converting effect, application and production process
03/26/1998DE19637438A1 Metallisation production on especially III-V semiconductor body
03/25/1998EP0831522A1 Method and device for light-assisted patterning of porous silicon
03/24/1998US5732099 Semiconductor light emitting device
03/24/1998US5732098 LED display device
03/24/1998US5731209 Method for the determination of nitrogen concentration in compound semiconductor
03/18/1998EP0829934A1 Method for fabricating an optoelectrical semiconductor device and a device or matrix of devices fabricated using said method
03/18/1998EP0829100A1 Radiation-emitting semiconductor diode having a separate confinement layer comprising a semiconductor material with at most 30 % aluminum or a semiconductor material free of aluminum
03/18/1998CN1176497A Semiconductor light emitting diode and method for manufacturing the same
03/17/1998US5729029 Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices
03/17/1998US5728606 Electronic Package
03/17/1998US5728605 Method for producing an optical semiconductor device having a carrier injection path or an electric-field applying path
03/12/1998WO1998010219A1 Integrally formed linear light strip with light emitting diodes
03/12/1998DE19652548C1 Continuous epitaxy of nitrogen-containing semiconductor layers
03/12/1998CA2264886A1 Integrally formed linear light strip with light emitting diodes
03/11/1998EP0828302A2 Gallium nitride group compound semiconductor light-emitting device and method for fabricating the same
03/11/1998EP0733224B1 Electro-optical module
03/11/1998CN2276200Y Fully spotlight high efficiency luminous diode
03/11/1998CN1175793A LED display packaging with substrate removal and method of fabrication
03/10/1998US5727104 Optical transmission module and a method of producing the same
03/10/1998US5727008 Semiconductor light emitting device, semiconductor laser device, and method of fabricating semiconductor light emitting device
03/10/1998US5726862 Electrical component having formed leads
03/10/1998US5726465 Light emitting diode
03/10/1998US5726464 Light emitting device using porous semi-conductor material
03/10/1998US5726462 Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer
03/10/1998US5725674 Device and method for epitaxially growing gallium nitride layers
03/04/1998EP0826246A1 Double heterojunction light emitting diode with gallium nitride active layer
03/04/1998CN2275747Y Apparatus for correcting nonuniform brightness of display unit of LED
03/03/1998US5724376 Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
03/03/1998US5724374 Aperture comprising an oxidized region and a semiconductor material
03/03/1998US5724055 Display apparatus and method of manufacture in which display luminance can be adjusted
03/03/1998US5723868 Illuminating assembly for use with bar code readers
03/03/1998US5723360 Method of processing an epitaxial wafer of InP or the like
03/03/1998US5723348 Method of making a light-emitting device
02/1998
02/26/1998WO1998008280A1 Aperture comprising an oxidized region and a semiconductor material
02/25/1998EP0825652A2 Ohmic electrode and method of forming the same
02/25/1998EP0825432A2 Light emitting diode and optical apparatus
02/25/1998CN1174405A LED display packaging with substrate removal and method of fabrication
02/24/1998US5721299 Electrically conductive and abrasion/scratch resistant polymeric materials, method of fabrication thereof and uses thereof
02/24/1998US5721160 Multicolor organic light emitting devices
02/19/1998WO1998007195A1 Process for producing a light-emitting and/or light-receiving semiconductor body
02/19/1998WO1998007187A1 Process for producing semiconductor bodies with a movpe-layer sequence
02/19/1998WO1997048138A3 Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices
02/19/1998DE19632627A1 Verfahren zum Herstellen eines Licht aussendenden und/oder empfangenden Halbleiterkörpers A method of manufacturing a light emitting and / or receiving semiconductor body
02/19/1998DE19632626A1 Verfahren zum Herstellen von Halbleiterkörpern mit MOVPE-Schichtenfolge A method for manufacturing semiconductor bodies by MOVPE layer sequence
02/18/1998EP0824274A2 Light emitting diode and manufacturing method therefor
02/18/1998EP0824207A1 White light illumination system
02/18/1998CN1173741A Epitaxial wafer for gap light-emitting element and gap light-emitting element
02/17/1998US5719979 Optical semiconductor module and method for manufacturing the same
02/17/1998US5719974 Method for customizing optical device configuration after packaging and packaged optical device for use therewith
02/17/1998US5719894 Extended wavelength strained layer lasers having nitrogen disposed therein
02/17/1998US5719891 Conductive element with lateral oxidation barrier
02/17/1998US5719407 Collective element of quantum boxes
02/15/1998CA2211514A1 Illumination system
02/12/1998WO1998006242A1 Mixed vapor deposited films for electroluminescent devices
02/12/1998WO1998006134A1 Led-array in a matrix structure
02/12/1998WO1998006133A2 Process for manufacturing an infrared-emitting luminescent diode
02/12/1998DE19631907A1 LED-Array in Matrixanordnung LED array in array
02/11/1998EP0823142A1 Temperature regulating laser diode assembly
02/11/1998CN1173045A Short-phase dry length semiconductor integrated light source
02/11/1998CN1172921A Decorative lamps
02/10/1998US5717803 Coupling structure of optical fiber and optical semiconductor element
02/10/1998US5717709 Semiconductor light-emitting device capable of having good stability in fundamental mode of oscillation, decreasing current leakage, and lowering oscillation threshold limit, and method of making the same
02/10/1998US5717417 Dot-matrix LED display device having brightness correction circuit and method for correcting brightness using the correction circuit
02/10/1998US5717226 Double hetero-structure surface; schottky barrier
02/10/1998US5716450 Growing method of gallium nitride related compound semiconductor crystal and gallium nitride related compound semiconductor device
02/05/1998WO1998005078A1 Light emitting device and display device
02/05/1998WO1998005073A1 Lens comprising at least one oxidized layer and method for forming same
02/04/1998EP0822675A2 Light transmission method and apparatus
02/04/1998EP0822628A1 Method of making a GaAs-based laser comprising a facet coating
02/04/1998EP0822371A2 Decorative lamps
02/04/1998CN1172369A Light emitting element driving circuit and light emitting device having the same
02/03/1998US5715339 Optical parallel transmission device
02/03/1998US5714838 Optically transparent diffusion barrier and top electrode in organic light emitting diode structures
02/03/1998US5714765 Method of fabricating a compositional semiconductor device
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