Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2010
12/02/2010US20100301432 Gap control for die or layer bonding using intermediate layers
12/02/2010US20100301431 Thin semiconductor device having embedded die support and methods of making the same
12/02/2010US20100301430 Mems device and method of fabricating the same
12/02/2010US20100301429 Semiconductor device and method of manufacturing the same
12/02/2010US20100301428 Tantalum silicon oxynitride high-k dielectrics and metal gates
12/02/2010US20100301426 Depletion mos transistor and enhancement mos transistor
12/02/2010US20100301425 Semiconductor device having a gate contact structure capable of reducing interfacial resistance
12/02/2010US20100301424 Nested and isolated transistors with reduced impedance difference
12/02/2010US20100301423 Semiconductor devices with improved local matching and end resistance of rx based resistors
12/02/2010US20100301419 Integrated circuit device with deep trench isolation regions for all inter-well and intra-well isolation and with a shared contact to a junction between adjacent device diffusion regions andan underlying floating well section
12/02/2010US20100301417 Device including high-k metal gate finfet and resistive structure and method of forming thereof
12/02/2010US20100301415 Method for manufacturing semiconductor substrate, and semiconductor device
12/02/2010US20100301414 High voltage nmos with low on resistance and associated methods of making
12/02/2010US20100301413 Fabrication of lateral double-diffused metal oxide semiconductor (LDMOS) devices
12/02/2010US20100301411 Semiconductor device
12/02/2010US20100301410 Semiconductor device and manufacturing method therefor
12/02/2010US20100301408 Semiconductor device
12/02/2010US20100301407 Semiconductor device having vertical channel transistor and manufacturing method of the same
12/02/2010US20100301405 Nonvolatile semiconductor memory device and manufacturing method thereof
12/02/2010US20100301404 Semiconductor device and production method thereof
12/02/2010US20100301403 Semiconductor device with multiple gates and doped regions and method of forming
12/02/2010US20100301402 Semiconductor device
12/02/2010US20100301401 Semiconductor device and related fabrication methods that use compressive material with a replacement gate technique
12/02/2010US20100301400 Schottky diode
12/02/2010US20100301399 Sensitive field effect transistor apparatus
12/02/2010US20100301398 Methods and apparatus for measuring analytes
12/02/2010US20100301396 Monolithic Vertically Integrated Composite Group III-V and Group IV Semiconductor Device and Method for Fabricating same
12/02/2010US20100301395 Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device
12/02/2010US20100301394 Semiconductor device and fabrication method thereof
12/02/2010US20100301393 Field effect transistor and manufacturing method therefor
12/02/2010US20100301392 Source/Drain Re-Growth for Manufacturing III-V Based Transistors
12/02/2010US20100301391 Tri-Gate Field-Effect Transistors Formed By Aspect Ratio Trapping
12/02/2010US20100301389 Esd protection structure
12/02/2010US20100301388 Semiconductor device and lateral diffused metal-oxide-semiconductor transistor
12/02/2010US20100301387 Semiconductor device and method for its production
12/02/2010US20100301385 Electrostatic discharge protection device
12/02/2010US20100301384 Diode
12/02/2010US20100301375 Formulation for improved electrodes for electronic devices
12/02/2010US20100301358 Semiconductor Substrate, Electronic Device, Optical Device, and Production Methods Therefor
12/02/2010US20100301351 High voltage switching devices and process for forming same
12/02/2010US20100301350 Semiconductor device and manufacturing method thereof
12/02/2010US20100301348 Nitride semiconductor wafer, nitride semiconductor chip, and method of manufacture of nitride semiconductor chip
12/02/2010US20100301347 Wafer bonding technique in nitride semiconductors
12/02/2010US20100301346 Thin film transistor and manufacturing method thereof, display device and manufacturing method thereof, and electronic appliance
12/02/2010US20100301344 Dielectric layer for an electronic device
12/02/2010US20100301343 Metal oxynitride thin film transistors and circuits
12/02/2010US20100301340 Thin film transistors and arrays
12/02/2010US20100301339 Method of producing thin film transistor and thin film transistor
12/02/2010US20100301338 Thin film device, flexible circuit board including thin film device, and method for manufacturing thin film device
12/02/2010US20100301337 Electronic device with self-aligned electrodes fabricated using additive liquid deposition
12/02/2010US20100301336 Method to Improve Nucleation of Materials on Graphene and Carbon Nanotubes
12/02/2010US20100301335 High Voltage Insulated Gate Bipolar Transistors with Minority Carrier Diverter
12/02/2010US20100301330 Memory Devices Having an Embedded Resistance Memory with Metal-Oxygen Compound
12/02/2010US20100301329 Semiconductor device and manufacturing method thereof
12/02/2010US20100301328 Semiconductor device and method for manufacturing the same
12/02/2010US20100301327 Display device having oxide thin film transistor and fabrication method thereof
12/02/2010US20100301325 Oxide thin film transistor and method of fabricating the same
12/02/2010US20100301308 Photodetectors
12/02/2010US20100301299 Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states
12/02/2010US20100300205 Acceleration sensor element and acceleration sensor having same
12/02/2010DE19933969B4 Bidirektionales Halbleiterbauelement und Verwendung desselben The same bidirectional semiconductor device and use
12/02/2010DE19923259B4 Speichereinrichtung und Verfahren zum Programmieren und Lesen einer Speichereinrichtung Memory device and method for programming and reading a memory device
12/02/2010DE112008002924T5 Struktur und Herstellung einer speziell für analoge Anwendungen geeigneten Halbleiterarchitektur mit Feldeffekttransistoren Structure and manufacturing a specially suitable for analog applications semiconductor architecture with field-effect transistors
12/02/2010DE112007000760B4 Herstellungsverfahren für eine selektiv abgeschiedene Verkappungsschicht auf einem epitaxial aufgewachsenen Source-Drain und Transistor Manufacturing method for a selectively deposited capping layer epitaxially grown on a source-drain and transistor
12/02/2010DE112006003550B4 Halbleitervorrichtung in Form einer Mehrgateanordnung mit vertieften und verspannten Source- und Drainbereichen sowie Herstellungsverfahren für diese Semiconductor device in the form of a multi-gate arrangement with recessed and strained source and drain regions, as well as methods for producing them
12/02/2010DE102010017146A1 Halbleitervorrichtung mit Driftsteuerzone Semiconductor device with drift control region
12/02/2010DE102010004314A1 Leistungsverstärker Power amplifier
12/02/2010DE102009023376A1 Einstellen der Austrittsarbeit in Metallgateelektrodenstrukturen mit großem ε durch selektives Entfernen einer Barrierenschicht Setting the work function metal gate electrode structures with large ε by selectively removing a barrier layer
12/02/2010DE102009023298A1 Verformungserhöhung in Transistoren mit einer eingebetteten verformungsinduzierenden Halbleiterlegierung durch Erzeugen von Strukturierungsungleichmäßigkeiten an der Unterseite der Gateelektrode Deformation increase in transistors using an embedded strain-inducing semiconductor alloy by generating Strukturierungsungleichmäßigkeiten at the bottom of the gate electrode
12/02/2010DE102009023250A1 Erhöhte Ätzstoppfähigkeit während der Strukturierung von siliziumnitridenthaltenden Schichtstapeln durch Vorsehen einer chemisch hergestellten Oxidschicht während der Halbleiterbearbeitung Increased Ätzstoppfähigkeit during the patterning of siliziumnitridenthaltenden layer stacks by providing an oxide layer chemically produced during semiconductor processing
12/02/2010DE102009023237A1 Verformungsumwandlung in biaxial verformten SOI-Substraten zur Leistungssteigerung von p-Kanal- und n-Kanaltransistoren Deformation conversion deformed biaxially in SOI substrates to increase the performance of p-channel and n-channel transistors
12/02/2010DE102006045581B4 Halbleiterbauelement mit einem Trench-Gate und Verfahren zu seiner Fertigung A semiconductor device with a trench gate and process for its manufacturing
12/02/2010DE102006029750B4 Trenchtransistor und Verfahren zur Herstellung Trench transistor and methods for making
12/02/2010DE102006020870B4 Halbleiterbauelement mit erhöhter Avalanchedurchbruch-Festigkeit A semiconductor device with enhanced avalanche breakdown strength
12/02/2010DE102005014932B4 Halbleiterbauteil und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
12/02/2010DE10102355B4 Verfahren und Vorrichtung zur Herstellung einer Druckerfassungsvorrichtung Method and device for producing a pressure detection device
12/01/2010EP2256817A2 Semiconductor device and method for fabricating the same
12/01/2010EP2256816A2 Power semiconductor device having a sense field-effect-transistor
12/01/2010EP2256815A2 Semiconductor device with surrounding gate
12/01/2010EP2256814A1 Oxide semiconductor device and method for manufacturing the same
12/01/2010EP2256813A2 Electric power conversion device
12/01/2010EP2256808A2 Semiconductor device and manufacturing method therof
12/01/2010EP2256807A2 Semiconductor device and its fabricating method
12/01/2010EP2256795A1 Oxide semiconductor device and manufacturing method thereof
12/01/2010EP2256718A2 El display device and electronic apparatus
12/01/2010EP2256577A1 Electronic control device comprising a transistor with a tap connection
12/01/2010EP2256554A2 Multicolored mask process for making display circuitry
12/01/2010EP2255387A1 Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
12/01/2010EP2255376A1 Ultra high density capacity comprising pillar-shaped capacitors formed on both sides of a substrate
12/01/2010EP2255177A2 A sensor device and a method of detecting particles
12/01/2010EP2153468B1 Manufacturing method of thin film transistor using oxide semiconductor
12/01/2010EP1330838B1 Control trimming of hard mask for transistor gate
12/01/2010EP1118124B1 Bipolar transistor and method for producing same
12/01/2010EP1112594B1 Vertical bipolar transistor and method for the production thereof
12/01/2010CN201663163U High-voltage reverse connection diode chip
12/01/2010CN1983442B Decoder circuit
12/01/2010CN1664686B Thin film transistor arraying panel and its manufacture method
12/01/2010CN101904011A Thin film semiconductor device and field effect transistor
12/01/2010CN101904010A Reverse-conducting semiconductor device and method for manufacturing such a reverse-conducting semiconductor device
12/01/2010CN101904009A Multi-directional trenching of a die in manufacturing superjunction devices
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