Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2010
12/14/2010US7851866 Electric power conversion device
12/14/2010US7851865 Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structure
12/14/2010US7851860 Techniques to reduce substrate cross talk on mixed signal and RF circuit design
12/14/2010US7851858 MOSFET having SOI and method
12/14/2010US7851857 Dual current path LDMOSFET with graded PBL for ultra high voltage smart power applications
12/14/2010US7851856 True CSP power MOSFET based on bottom-source LDMOS
12/14/2010US7851855 Semiconductor device and a method for manufacturing the same
12/14/2010US7851854 SiC semiconductor device having bottom layer and method for manufacturing the same
12/14/2010US7851853 Semiconductor device comprising high-withstand voltage MOSFET and its manufacturing method
12/14/2010US7851852 Method of forming a low capacitance semiconductor device and structure therefor
12/14/2010US7851851 Three dimensional NAND memory
12/14/2010US7851850 Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection
12/14/2010US7851848 Cylindrical channel charge trapping devices with effectively high coupling ratios
12/14/2010US7851847 Flash memory device and method of erasing the same
12/14/2010US7851846 Non-volatile memory cell with buried select gate, and method of making same
12/14/2010US7851845 Flash memory device and method of manufacturing the same
12/14/2010US7851844 Memory device having cross-shaped semiconductor fin structure
12/14/2010US7851842 Vertical channel transistor in semiconductor device and method of fabricating the same
12/14/2010US7851841 Large-area nanoenabled macroelectronic substrates and uses therefor
12/14/2010US7851840 Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier
12/14/2010US7851834 Cascode current mirror and method
12/14/2010US7851833 Semiconductor device
12/14/2010US7851831 Transistor
12/14/2010US7851830 Multigate Schottky diode
12/14/2010US7851829 Semiconductor chip module
12/14/2010US7851828 Phase change memory cell with transparent conducting oxide for electrode contact material
12/14/2010US7851827 Back-side trapped non-volatile memory device
12/14/2010US7851825 Insulated gate e-mode transistors
12/14/2010US7851822 Full frame ITO pixel with improved optical symmetry
12/14/2010US7851821 Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device
12/14/2010US7851816 Stackable optoelectronics chip-to-chip interconnects and method of manufacturing
12/14/2010US7851811 Stackable optoelectronics chip-to-chip interconnects and method of manufacturing
12/14/2010US7851807 Layer-stacked wiring and semiconductor device using the same
12/14/2010US7851806 Thin film transistor liquid crystal display array substrate and manufacturing method thereof
12/14/2010US7851803 Semiconductor device, manufacturing method of semiconductor device, and display device
12/14/2010US7851801 Pixel structure
12/14/2010US7851799 Thin film transistor substrate
12/14/2010US7851798 Method and apparatus for dark current and blooming suppression in 4T CMOS imager pixel
12/14/2010US7851797 Display device including a color filter or color filters over a pixel portion and a driving circuit for driving the pixel portion
12/14/2010US7851796 Light emitting device and electronic equipment
12/14/2010US7851792 Field-effect transistor
12/14/2010US7851791 Thin film transistor having N-type and P-type CIS thin films and method of manufacturing the same
12/14/2010US7851790 Isolated Germanium nanowire on Silicon fin
12/14/2010US7851786 Programmable polyelectrolyte electrical switches
12/14/2010US7851785 Magnetic tunnel transistor with thin read gap for head applications
12/14/2010US7851783 Method and apparatus for fabricating a carbon nanotube transistor
12/14/2010US7851780 Semiconductor buffer architecture for III-V devices on silicon substrates
12/14/2010US7851779 Medium for use in data storage, thermal energy storage and other applications, with functional layer made of different materials
12/14/2010US7851777 Memory device including resistance-changing function body
12/14/2010US7851776 Phase change RAM device
12/14/2010US7851345 Semiconductor device and method of forming oxide layer on signal traces for electrical isolation in fine pitch bonding
12/14/2010US7851338 Shell of larger band gap is grown around a semiconductor rod using a surfactant, colloid semiconductor nanocrystals; interfacial segregation preferentially deposits one semiconductor (CdS/Zns) near the core (CdSe), to relax of the strain at the interface; thickness variation; photochemical annealing
12/14/2010US7851324 Method of forming metal-insulator-metal structure
12/14/2010US7851314 Short channel lateral MOSFET and method
12/14/2010US7851313 Semiconductor device and process for improved etch control of strained silicon alloy trenches
12/14/2010US7851309 Selective epitaxy vertical integrated circuit components and methods
12/14/2010US7851308 Method of producing a semiconductor device having a trench-stuffed layer
12/14/2010US7851305 Method of manufacturing nonvolatile semiconductor memory
12/14/2010US7851304 Nonvolatile memory device and fabrication method
12/14/2010US7851301 Semiconductor capacitor structure and method to form same
12/14/2010US7851298 Method for fabricating transistor in a semiconductor device utilizing an etch stop layer pattern as a dummy pattern for the gate electrode formation
12/14/2010US7851295 Flash memory device and method of manufacturing the same
12/14/2010US7851289 Method of forming N-and P- channel field effect transistors on the same silicon layer having a strain effect
12/14/2010US7851278 Semiconductor device and method for manufacturing the same
12/14/2010US7851276 Methods and structures for planar and multiple-gate transistors formed on SOI
12/14/2010US7851274 Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor
12/14/2010US7851246 Semiconductor device with optical sensor and method of forming interconnect structure on front and backside of the device
12/14/2010US7851064 Synthesis is interrupted and a free end of each of the carbon nanotubes is supported from a second substrate; separate synthesis sites from first substrate and resume the synthesis to lengthen nanotubes; interface between synthesis site and nanotube has continuous unoccluded, free access to reactant gas
12/14/2010US7850866 Peroxide (H2O2) to oxidize molydenum and copper, sulfuric acid to react with cupric oxide,and a peroxide stabilizer; concurrent etching a the multilayer to form the molybdenum layer extending outwardly from underneath an edge of the copperline; thin film transistor liquid crystal-displays
12/09/2010WO2010141708A1 Apparatus and method to fabricate an electronic device
12/09/2010WO2010141493A2 Formulations for improved electrodes for electronic devices
12/09/2010WO2010141351A2 Wafer bonding technique in nitride semiconductors
12/09/2010WO2010141238A1 Power switching devices having controllable surge current capabilities
12/09/2010WO2010141237A2 High voltage insulated gate bipolar transistors with minority carrier diverter
12/09/2010WO2010141146A1 Schottky diodes including polysilicon having low barrier heights and methods of fabricating the same
12/09/2010WO2010140666A1 Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and method for manufacturing semiconductor device
12/09/2010WO2010140574A1 Physical quantity sensor
12/09/2010WO2010140505A1 Laser annealing method and laser annealing apparatus
12/09/2010WO2010140468A1 Physical quantity sensor
12/09/2010WO2010140447A1 Organic thin film transistor, surface light source and display device
12/09/2010WO2010140439A1 Method for manufacturing circuit board for electronic paper and method for manufacturing organic thin film transistor element
12/09/2010WO2010140370A1 Optical device, semiconductor substrate, optical device producing method, and semiconductor substrate producing method
12/09/2010WO2010140278A1 Semiconductor device and process for manufacture thereof
12/09/2010WO2010139546A1 Semiconductor structural element and method for the production thereof
12/09/2010WO2010139386A1 Process for aligning nanoparticles
12/09/2010WO2010090980A3 High speed, low power consumption, isolated analog cmos unit
12/09/2010WO2010046922A3 Nonvolatile floating gate analog memory cell
12/09/2010WO2009036071A9 Nanotube enabled, gate-voltage controlled light emitting diodes
12/09/2010WO2004086458A4 Electronic device including a self-assembled monolayer, and a method of fabricating the same
12/09/2010US20100312468 Integrated micro-electro-mechanical systems (mems) sensor device
12/09/2010US20100311218 Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device
12/09/2010US20100311215 Semiconductor device having a buried gate that can realize a reduction in gate-induced drain leakage (gidl) and method for manufacturing the same
12/09/2010US20100309729 Nonvolatile memory device and method of manufacturing the same
12/09/2010US20100309723 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
12/09/2010US20100309722 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
12/09/2010US20100308898 Method of generating electrical energy in an integrated circuit during the operation of the latter, corresponding integrated circuit and method of fabrication
12/09/2010US20100308462 Glass compositions used in conductors for photovoltaic cells
12/09/2010US20100308446 Semiconductor device
12/09/2010US20100308445 Semiconductor device and method of manufacturing semiconductor device
12/09/2010US20100308444 Method of Manufacturing an Electronic Device
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