Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2010
12/15/2010EP2261960A1 Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus
12/15/2010EP2261956A2 Dielectric film
12/15/2010EP2261955A2 Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
12/15/2010EP2261174A2 RFID tag using nanowire transistors
12/15/2010EP2260521A2 High current control circuit including metal-insulator transition device, and system including the high current control circuit
12/15/2010EP2260516A1 Opto-electronic semiconductor chip and method for producing the same
12/15/2010EP2260514A1 A semiconductor device wherein a first insulated gate field effect transistor is connected in series with a second field effect transistor
12/15/2010EP1676325B1 BiFET INCLUDING A FET HAVING INCREASED LINEARITY AND MANUFACTURABILITY
12/15/2010EP1547156B1 Finfet having improved carrier mobility and method of its formation
12/15/2010EP1535337B1 Method of making separate sidewall oxidation of a flash memory cell
12/15/2010EP1269544B1 Method of manufacturing a charge-coupled image sensor
12/15/2010EP1262996B1 Semiconductor integrated circuit device
12/15/2010CN201673912U Semiconductor device with super-junction structure
12/15/2010CN201673911U High-power and high-frequency thyristor
12/15/2010CN201673909U Grooved power MOS (Metal Oxide Semiconductor) device
12/15/2010CN1983605B 半导体集成电路装置 The semiconductor integrated circuit device
12/15/2010CN1873922B A method for making a semiconductor device with a high-k gate dielectric layer and a silicide gate electrode
12/15/2010CN1870235B Organic tft, method of manufacturing the same and flat panel display device having the same
12/15/2010CN1841754B NOR-type hybrid multi-bit non-volatile memory device and method of operating the same
12/15/2010CN1782788B Display device
12/15/2010CN101919060A Thin film transistor substrate and display device
12/15/2010CN101919059A Multi-directional trenching of a plurality of dies in manufacturing superjunction devices
12/15/2010CN101919058A Systems and methods for preparation of epitaxially textured thick films
12/15/2010CN101919057A Semiconductor device and method of manufacturing semiconductor device
12/15/2010CN101919043A Display device
12/15/2010CN101919032A Semiconductor device and semiconductor device manufacturing method
12/15/2010CN101918888A Display device, process for producing the display device, and sputtering target
12/15/2010CN101917161A Carbon nanotube-based field effect transistor frequency multiplier
12/15/2010CN101916826A Organic semiconductor device and method for manufacturing the same
12/15/2010CN101916786A High-power planar junction bidirectional TVS diode chip and production method thereof
12/15/2010CN101916785A Semiconductor device, manufacturing method, and electronic device
12/15/2010CN101916784A SOI (Silicon on Insulator) variable buried oxide layer thickness device and preparation method thereof
12/15/2010CN101916783A Transverse and longitudinal diffusion type field effect transistor of depressed channel and manufacturing method thereof
12/15/2010CN101916782A Depression channel type transistor made of ferroelectric material and manufacturing method thereof
12/15/2010CN101916781A Method of forming an mos transistor and structure therefor
12/15/2010CN101916780A LDMOS device with multilayer super-junction structure
12/15/2010CN101916779A SOI super junction LDMOS structure capable of completely eliminating substrate-assisted depletion effect
12/15/2010CN101916778A High-voltage semiconductor device and manufacturing method thereof
12/15/2010CN101916777A Laterally diffused metal oxide semiconductor and electrostatic protection framework
12/15/2010CN101916776A SOIMOS (Silicon on Insulator Metal Oxide Semiconductor) device with BTS (Bodied Tied to Source) structure and manufacture method thereof
12/15/2010CN101916775A High-voltage semiconductor device and manufacturing method thereof
12/15/2010CN101916774A Method for forming field effect transistor and semiconductor device
12/15/2010CN101916773A Double-channel MOS-HEMT (Metal Oxide Semiconductor-High Electron Mobility Transistor) device and manufacturing method
12/15/2010CN101916772A Dielectric layer
12/15/2010CN101916771A A method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
12/15/2010CN101916770A Si-Ge-Si semiconductor structure with double graded junctions and forming method thereof
12/15/2010CN101916762A Complementary metal oxide semiconductor field effect transistor structure
12/15/2010CN101916755A Plane rectifier
12/15/2010CN101916730A Method for manufacturing silicon on insulator (SOI) super-junction laterally diffused metal oxide semiconductor (LDMOS) with linear buffer layer
12/15/2010CN101916729A Method for producing SOI (Silicon on Insulator) LDMOS (Laterally Diffused Metal Oxide Semiconductor) device provided with multi-layer super-junction structure
12/15/2010CN101916726A Method for manufacturing signal operation instruction (SOI) metal oxide semiconductor (MOS) apparatus structure for restraining floating body effect
12/15/2010CN101916724A Method for manufacturing transistor
12/15/2010CN101916721A Method for improving change curve of threshold voltages of high-voltage devices under 60nm along channel length
12/15/2010CN101916720A Method for improving threshold voltage variation curve of high-pressure device below 60 nanometers
12/15/2010CN101916591A 半导体集成电路器件 The semiconductor integrated circuit device
12/15/2010CN101916544A Electro-optics apparatus
12/15/2010CN101916019A Liquid crystal display panel, pixel array base plate and pixel structure thereof
12/15/2010CN101577292B SOI device and method for manufacturing the same
12/15/2010CN101577290B Preparation method of polysilicon gate structure with hard mask layer on the top
12/15/2010CN101556966B MOS tube capable of reducing damage effect of plasma
12/15/2010CN101527324B Two-way low-voltage punch-through transient voltage suppression diode and manufacturing method thereof
12/15/2010CN101527319B Microcrystalline silicon thin film transistor structure and method for manufacturing same
12/15/2010CN101496175B Silicon carbide semiconductor device and method for manufacturing the same
12/15/2010CN101452958B Semiconductor device
12/15/2010CN101427374B High performance 3d fet structures, and methods for forming the same using preferential crystallographic etching
12/15/2010CN101385144B Hybrid orientation scheme for standard
12/15/2010CN101320753B Double gate manufactured with locos techniques
12/15/2010CN101263606B Semiconductor device and its manufacturing method
12/15/2010CN101258601B Bipolar method and structure with depletable collector columns
12/15/2010CN101043037B Semiconductor device and a method of manufacturing the same
12/14/2010US7852891 Nitride semiconductor light-emitting device
12/14/2010US7852449 Liquid crystal display device and method of fabricating the same
12/14/2010US7852438 Transflective type liquid crystal display device and method for fabricating the same
12/14/2010US7851930 improved thermal conductivity and dispensability properties; alloy of copper and silver as filler; semiconductor chips; printed circuits; microelectronics
12/14/2010US7851928 Semiconductor device having substrate with differentially plated copper and selective solder
12/14/2010US7851926 Semiconductor device
12/14/2010US7851922 Bond pad rerouting element, rerouted semiconductor devices including the rerouting element, and assemblies including the rerouted semiconductor devices
12/14/2010US7851917 Wiring structure and method of manufacturing the same
12/14/2010US7851914 Semiconductor integrated circuit device
12/14/2010US7851913 Semiconductor device including a power device with first metal layer and second metal layer laterally spaced apart
12/14/2010US7851910 Diffusion soldered semiconductor device
12/14/2010US7851909 Group III nitride based flip-chip integrated circuit and method for fabricating
12/14/2010US7851908 Semiconductor device
12/14/2010US7851897 IC package structures for high power dissipation and low RDSon
12/14/2010US7851895 Semiconductor structure and semiconductor manufacturing method
12/14/2010US7851891 Semiconductor device and method for fabricating the same
12/14/2010US7851890 Semiconductor device and method for manufacturing the same
12/14/2010US7851888 Nonvolatile memory and fabrication method thereof
12/14/2010US7851886 Semiconductor device and manufacturing method of semiconductor device
12/14/2010US7851883 Semiconductor device and method of manufacture thereof
12/14/2010US7851882 Silicon carbide semiconductor device having junction barrier schottky diode
12/14/2010US7851881 Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode
12/14/2010US7851878 Magnetic memory device and method of fabricating the same
12/14/2010US7851877 Logic circuit and single-electron spin transistor
12/14/2010US7851875 MEMS devices and methods of manufacture thereof
12/14/2010US7851874 Semiconductor device and method for manufacturing the same
12/14/2010US7851873 Semiconductor device and method of manufacturing the same
12/14/2010US7851871 Semiconductor device and method for fabricating the same
12/14/2010US7851868 Step gate electrode structures for field-effect transistors and methods for fabricating the same
12/14/2010US7851867 Integrated circuit and method of manufacturing the same
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