Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2010
11/18/2010WO2010131182A1 Magnetic cellular devices
11/18/2010WO2010130602A1 High voltage field effect transistor with trench drift region and corresponding method of production
11/18/2010WO2010130421A1 Tunnel diodes made of stress-compensated compound semiconductor layers
11/18/2010WO2010096261A3 Structures and methods for improving trench-shielded semiconductor devices and schottky barrier rectifier devices
11/18/2010WO2010096241A3 Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same
11/18/2010WO2010088419A3 Cross-conjugated polymers for organic electronic devices and related methods
11/18/2010US20100291740 Semiconductor device and method for manufacturing the same
11/18/2010US20100291735 Stackable semiconductor chip layer comprising prefabricated trench interconnect vias
11/18/2010US20100291716 Organic electroluminescence device and method of manufacturing the same
11/18/2010US20100289982 Semiconductor device, led driving circuit, and apparatus for displaying an image
11/18/2010US20100289123 Method for making a semi-conducting substrate located on an insulation layer
11/18/2010US20100289122 Iii-v nitride substrate boule and method of making and using the same
11/18/2010US20100289121 Chip-Level Access Control via Radioisotope Doping
11/18/2010US20100289120 Semiconductor device and a method of manufacturing the same
11/18/2010US20100289117 Shallow trench isolation structure including second liner covering corner of trench and first liner
11/18/2010US20100289116 Selective Epitaxial Growth of Semiconductor Materials with Reduced Defects
11/18/2010US20100289114 Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ doped semiconductor material
11/18/2010US20100289113 Fabrication process of a hybrid semiconductor substrate
11/18/2010US20100289109 Schottky diodes containing high barrier metal islands in a low barrier metal layer and methods of forming the same
11/18/2010US20100289108 Silicon dioxide cantilever support and method for silicon etched structures
11/18/2010US20100289098 Magnetic Tunnel Junction Device and Fabrication
11/18/2010US20100289097 Integrated Microphone
11/18/2010US20100289096 Vibrating nano-scale or micro-scale electromechanical component with enhanced detection level
11/18/2010US20100289095 Semiconductor device
11/18/2010US20100289093 Semiconductor device and method for fabricating the same
11/18/2010US20100289092 Power mosfet package
11/18/2010US20100289085 Asymmetric Semiconductor Devices and Method of Fabricating
11/18/2010US20100289084 Semiconductor memory device
11/18/2010US20100289078 Semiconductor device and method for manufacturing the same
11/18/2010US20100289076 Semiconductor device
11/18/2010US20100289074 Semiconductor device and method of fabricating the same
11/18/2010US20100289073 Trench MOSFETS with ESD Zener diode
11/18/2010US20100289072 Electronic Device Including a Gate Electrode Having Portions with Different Conductivity Types
11/18/2010US20100289071 Non-volatile memory device, methods of fabricating and operating the same
11/18/2010US20100289070 Methods for isolating portions of a loop of pitch-multiplied material and related structures
11/18/2010US20100289069 Semiconductor integrated-circuit device
11/18/2010US20100289068 Thin Film Transistor Structure
11/18/2010US20100289067 High Voltage III-Nitride Semiconductor Devices
11/18/2010US20100289066 Semiconductor device and method of fabricating the same
11/18/2010US20100289065 Mems integrated chip with cross-area interconnection
11/18/2010US20100289063 Epitaxial solid-state semiconducting heterostructures and method for making same
11/18/2010US20100289062 Carrier mobility in surface-channel transistors, apparatus made therewith, and systems containing same
11/18/2010US20100289060 Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectronics
11/18/2010US20100289058 Lateral bipolar junction transistor
11/18/2010US20100289057 Integrated circuits using guard rings for esd, systems, and methods for forming the integrated circuits
11/18/2010US20100289037 Semiconductor device, manufacturing method thereof and display device
11/18/2010US20100289033 Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom
11/18/2010US20100289032 Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
11/18/2010US20100289031 Diamond semiconductor device
11/18/2010US20100289030 Diamond semiconductor element and process for producing the same
11/18/2010US20100289029 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
11/18/2010US20100289028 Electronic device, display device, interface circuit and differential amplification device, which are constituted by using thin-film transistors
11/18/2010US20100289027 Electronic device, display device, interface circuit and differential amplification device, which are constituted by using thin-film transistors
11/18/2010US20100289025 Thin film transistor array substrate, display panel comprising the same, and method for manufacturing thin film transistor array substrate
11/18/2010US20100289024 Insulating Thin Film, Formation Solution For Insulating Thin Film, Field-Effect Transistor, Method For Manufacturing The Same And Image Display Unit
11/18/2010US20100289022 Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
11/18/2010US20100289020 Field effect transistor using oxide semicondutor and method for manufacturing the same
11/18/2010US20100289005 Amorphous multi-component metallic thin films for electronic devices
11/18/2010US20100289004 Zno-based thin film and zno-based semiconductor element
11/18/2010US20100289003 Making colloidal ternary nanocrystals
11/18/2010US20100288996 Memory arrays including memory levels that share conductors, and methods of forming such memory arrays
11/18/2010US20100288355 Silicon nitride diffusion barrier layer for cadmium stannate tco
11/18/2010US20100288354 Cadmium stannate tco structure with diffusion barrier layer and separation layer
11/18/2010US20100288048 Electronic pressure-sensing device
11/18/2010DE112006001735B4 Blockkontaktarchitekturen für Transistoren mit Kanälen in einer Nano-Größenordnung und Verfahren zum Ausbilden Contact block architectures for transistors with channels in a nano-scale and method of forming
11/18/2010DE10360884B4 Oganische Doppeltafel-Elektrolumineszenz-Anzeigevorrichtung und Herstellungsverfahren für diesselbe Oganische dual-panel electroluminescent display device and manufacturing method for the same
11/18/2010DE102010027886A1 Transistorbauelement mit Abschirmstruktur Transistor device with shielding
11/18/2010DE102010011112A1 Halbleitervorrichtung Semiconductor device
11/18/2010DE102010005625A1 Herstellungsverfahren einer Siliciumcarbid-Halbleitervorrichtung Method of manufacturing a silicon carbide semiconductor device
11/18/2010DE102010001215A1 Halbleitervorrichtung Semiconductor device
11/18/2010DE102009021241A1 Hochvolt-Transistor mit vergrabener Driftstrecke und Herstellungsverfahren High-voltage transistor with buried drift and manufacturing processes
11/18/2010DE102007061527B4 Integrierter Schaltkreis und Verfahren zum Herstellen eines integrierten Schaltkreises Integrated circuit and method of fabricating an integrated circuit
11/18/2010DE102005019860B4 Steuerbare Halbleiterdiode, elektronisches Bauteil und Spannungszwischenkreisumrichter Controllable semiconductor diode, electronic component and voltage source inverter
11/18/2010DE102004021157B4 Dünnschichttransistor-Arraysubstrat und Verfahren zum Herstellen desselben Of the same thin film transistor array substrate and methods for making
11/18/2010DE102004009141B4 Speicherzelle mit Grabentransistor-Gate zum Erzielen eines großen, selbst ausgerichteten offenen Kontaktspielraums und Verfahren zur Herstellung derselben Memory cell with grave transistor gate for obtaining a large self-aligned contact open latitude and process for producing same
11/18/2010CA2761473A1 Semiconductor device
11/18/2010CA2761430A1 Silicon carbide substrate and semiconductor device
11/18/2010CA2761428A1 Silicon carbide substrate, semiconductor device, and method of manufacturing silicon carbide substrate
11/18/2010CA2761246A1 Insulated gate bipolar transistor
11/18/2010CA2761245A1 Semiconductor device
11/17/2010EP2251918A1 Semiconductor device
11/17/2010EP2251912A1 Tunnel diodes from strain-compensated compound semiconductor layers
11/17/2010EP2251907A1 Semiconductor Storage Device and Manufacturing Method
11/17/2010EP2251904A1 Driving method for reverse conducting semiconductor element, semiconductor device, and feeding device
11/17/2010EP2251663A2 An electronic pressure-sensing device
11/17/2010EP2251464A2 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
11/17/2010EP2251342A1 Fused ring compound, method for producing the same, polymer, organic thin film containing the compound and/or the polymer, and organic thin film device and organic thin film transistor each comprising the organic thin film
11/17/2010EP2251335A1 Branched compounds, organic thin films made by using the same, and organic thin film devices
11/17/2010EP2250666A1 Semiconductor device and method of manufacture thereof
11/17/2010EP2250665A1 Semiconductor device and method of manufacture thereof
11/17/2010EP2250664A1 Ý100¨or ý110¨aligned, semiconductor-based, large-area, flexible, electronic devices
11/17/2010EP2250661A1 Deposition and selective removal of conducting helplayer for nanostructure processing
11/17/2010EP1711959B1 Transistor with doped gate dielectric and method of manufacturing the same
11/17/2010EP1537263B1 Semiconductor nanocrystal heterostructures
11/17/2010EP1532288B1 Hybrid beam deposition system and method for fabricating zno films
11/17/2010EP1284496B1 Junction field-effect transistor and method of manufacture thereof
11/17/2010EP1090415B1 Semiconductor arrangement with ohmic contact and a method for contacting a semiconductor arrangement
11/17/2010CN201638821U Compound plane terminal passivating structure of silicon controlled component
11/17/2010CN201638820U P type lateral isolation gate bipolar device for reducing hot carrier effect
11/17/2010CN1937181B Semiconductor element with nickel silicide and method for preparing nickel silicide
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