Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2010
12/23/2010US20100321357 Image Sensor and Image Sensor Integrated Type Active Matrix Type Display Device
12/23/2010US20100321279 Transistor, electronic device including a transistor and methods of manufacturing the same
12/23/2010US20100321044 Sensing element integrating silicon nanowire gated-diodes, manufacturing method and detecting system thereof
12/23/2010US20100320574 Semiconductor device and method of fabricating the same
12/23/2010US20100320573 Organosilane polymers, hardmask compositions including the same and methods of producing semiconductor devices using organosilane hardmask compositions
12/23/2010US20100320572 Thin-Body Bipolar Device
12/23/2010US20100320571 Bipolar transistor structure and method including emitter-base interface impurity
12/23/2010US20100320570 Semiconductor device
12/23/2010US20100320569 Carbon nanotube resistor, semiconductor device, and manufacturing method thereof
12/23/2010US20100320568 Semiconductor device, rf-ic and manufacturing method of the same
12/23/2010US20100320567 Integrated circuit comprising a capacitor with metal electrodes and process for fabrcating such a capacitor
12/23/2010US20100320566 Semiconductor constructions
12/23/2010US20100320564 Nanowire memory device and method of manufacturing the same
12/23/2010US20100320562 Semiconductor device
12/23/2010US20100320560 Metallic Bump Structure Without Under Bump Metallurgy And a Manufacturing Method Thereof
12/23/2010US20100320557 Semiconductor device
12/23/2010US20100320551 Magnetoresistive Random Access Memory with Improved Layout Design and Process Thereof
12/23/2010US20100320550 Spin-Torque Magnetoresistive Structures with Bilayer Free Layer
12/23/2010US20100320549 Methods and Apparatuses for Integrated Packaging of Microelectromechanical Devices
12/23/2010US20100320548 Silicon-Rich Nitride Etch Stop Layer for Vapor HF Etching in MEMS Device Fabrication
12/23/2010US20100320547 Scavanging metal stack for a high-k gate dielectric
12/23/2010US20100320546 Semiconductor device and method for manufacturing the same
12/23/2010US20100320541 Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate
12/23/2010US20100320537 Semiconductor device and method of fabricating the same
12/23/2010US20100320536 Transistor component having an amorphous semi-isolating channel control layer
12/23/2010US20100320535 Transistor component having an amorphous channel control layer
12/23/2010US20100320534 Structure and Method for Forming a Thick Bottom Dielectric (TBD) for Trench-Gate Devices
12/23/2010US20100320533 Insulated gate type semiconductor device and method for fabricating the same
12/23/2010US20100320532 Trench gate mosfet and method of manufacturing the same
12/23/2010US20100320531 Standing chip scale package
12/23/2010US20100320530 Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation and devices made therewith
12/23/2010US20100320529 Integrated circuit system with high voltage transistor and method of manufacture thereof
12/23/2010US20100320527 Nonvolatile semiconductor memory device and method for manufacturing same
12/23/2010US20100320526 Nonvolatile semiconductor memory device and method for manufacturing same
12/23/2010US20100320525 Nonvolatile semiconductor memory device and method of manufacturing nonvolatile semiconductor memory device
12/23/2010US20100320524 Semiconductor integrated circuit device and a method of manufacturing the same
12/23/2010US20100320523 Finned memory cells
12/23/2010US20100320522 Semiconductor device
12/23/2010US20100320513 Semiconductor device and a method of manufacturing the same
12/23/2010US20100320512 Semiconductor device manufacturing method and semiconductor device
12/23/2010US20100320511 Semiconductor device and method for manufacturing the same
12/23/2010US20100320510 Interfacial Barrier for Work Function Modification of High Performance CMOS Devices
12/23/2010US20100320509 Method for forming and integrating metal gate transistors having self-aligned contacts and related structure
12/23/2010US20100320508 Horizontally depleted metal semiconductor field effect transistor
12/23/2010US20100320506 Ultra-Low Dislocation Density Group III - Nitride Semiconductor Substrates Grown Via Nano- Or Micro-Particle Film
12/23/2010US20100320505 Semiconductor device and method for manufacturing the same, and amplifier
12/23/2010US20100320504 Semiconductor device comprising gate electrode surrounding entire circumference of channel region and method for manufacturing the same
12/23/2010US20100320503 Strained channel transistor and method of fabrication thereof
12/23/2010US20100320501 Non-snapback scr for electrostatic discharge protection
12/23/2010US20100320477 Process for producing silicon carbide crystals having increased minority carrier lifetimes
12/23/2010US20100320476 Vertical junction field effect transistors and diodes having graded doped regions and methods of making
12/23/2010US20100320475 ETCHING TECHNIQUE FOR THE FABRICATION OF THIN (Al, In, Ga)N LAYERS
12/23/2010US20100320474 Gallium nitride for liquid crystal electrodes
12/23/2010US20100320470 Thin film transistor array panel and method for manufacturing the same
12/23/2010US20100320468 Thin film transistor substrate and method of manufacturing the same
12/23/2010US20100320467 Thin-film transistor, manufacturing method therefor, and electronic device using a thin-film transistor
12/23/2010US20100320465 Semiconductor device with multi-functional dielectric layer
12/23/2010US20100320464 Thin film transistor, photo mask for defining thin film transistor, and method of making thin film transistor
12/23/2010US20100320463 Method of Fabricating a Semiconductor Device
12/23/2010US20100320462 N-type conductive aluminum nitride semiconductor crystal and manufacturing method thereof
12/23/2010US20100320459 Thin film transistor and method of producing thin film transistor
12/23/2010US20100320458 Igzo-based oxide material and method of producing igzo-based oxide material
12/23/2010US20100320457 Etching solution composition
12/23/2010US20100320456 Method for Fabricating a Doped and/or Alloyed Semiconductor
12/23/2010US20100320450 Semiconductor substrate, semiconductor device, light emitting device and electronic device
12/23/2010US20100320445 Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof
12/23/2010US20100320439 Carbon nanotube structure and method of vertically aligning carbon nanotubes
12/23/2010US20100320438 Complexes of carbon nanotubes and fullerenes with molecular-clips and use thereof
12/23/2010US20100320437 Gas-phase functionalization of surfaces including carbon-based surfaces
12/23/2010US20100320432 Vertical mosfet transistor, in particular operating as a selector in nonvolatile memory devices
12/23/2010US20100319760 semiconducting component
12/23/2010DE102006015077B4 Transistor mit abgesenkten Drain- und Source-Gebieten und Verfahren zur Herstellung desselben Of the same transistor with lowered drain and source regions and methods of making
12/23/2010DE102005018366B4 Rückwärtsleitende Halbleitervorrichtung Reverse conducting semiconductor device
12/23/2010CA2762763A1 Vertical junction field effect transistors and diodes having graded doped regions and methods of making
12/23/2010CA2762564A1 Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation and devices made therewith
12/22/2010EP2264804A1 Organic semiconductor composition, organic thin film and organic thin film element provided with organic thin film
12/22/2010EP2264778A2 High-voltage vertical insulated gate transistor
12/22/2010EP2264777A2 High-voltage insulated gate field-effect transistor
12/22/2010EP2264776A2 High-voltage insulated gate field-effect transistor
12/22/2010EP2264775A2 High-voltage insulated gate field-effect transistor
12/22/2010EP2264774A2 High-voltage insulated gate field-effect transistor
12/22/2010EP2264773A2 High-voltage insulated gate field-effect transistor
12/22/2010EP2264772A2 Method of fabricating a high-voltage field-effect transistor
12/22/2010EP2264771A2 MOS thin film transistor and method of fabricating same
12/22/2010EP2264770A2 Thin film transistor and its manufacturing method
12/22/2010EP2264769A1 Silicon carbide horizontal channel buffered gate semiconductor devices
12/22/2010EP2264764A2 Semiconductor display device and method of fabricating the same
12/22/2010EP2264756A1 Semiconductor device
12/22/2010EP2264747A2 Method of making a high-voltage transistor
12/22/2010EP2264746A2 Method of making a high-voltage field-effect transistor
12/22/2010EP2264745A2 Apparatus having integrated circuits made of TFT devices, and methods of manufacture thereof
12/22/2010EP2264741A2 Silicon carbide dimpled substrate
12/22/2010EP2264725A1 Spin injection device, magnetic apparatus using the same, and magnetic thin film used for them
12/22/2010EP2263273A2 Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
12/22/2010EP2263254A1 Dual gate lateral diffused mos transistor
12/22/2010EP2262723A1 Nanowire wrap gate devices
12/22/2010EP1766694B1 Broadband superluminescent light emitting diode
12/22/2010EP1733414B1 Cold atom system with atom chip wall
12/22/2010EP1425802B1 Power mosfet having a trench gate electrode and method of making the same
12/22/2010CN201681943U Automobile rectifying bridge diode
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