Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2010
12/28/2010US7859060 Ultra thin silicon on insulator
12/28/2010US7859059 Semiconductor device and method for manufacturing same
12/28/2010US7859052 Semiconductor apparatus
12/28/2010US7859051 Semiconductor device with a reduced band gap and process
12/28/2010US7859050 Memory having a vertical access device
12/28/2010US7859049 Semiconductor device
12/28/2010US7859048 Semiconductor device having super junction
12/28/2010US7859047 Shielded gate trench FET with the shield and gate electrodes connected together in non-active region
12/28/2010US7859046 Ballistic direct injection NROM cell on strained silicon structures
12/28/2010US7859045 Semiconductor device and method for manufacturing the same
12/28/2010US7859044 Partially gated FINFET with gate dielectric on only one sidewall
12/28/2010US7859043 Three-terminal single poly NMOS non-volatile memory cell
12/28/2010US7859042 Nonvolatile memory devices
12/28/2010US7859041 Gate structure of semiconductor device
12/28/2010US7859040 Non-volatile memory
12/28/2010US7859037 Checkerboarded high-voltage vertical transistor layout
12/28/2010US7859036 Memory devices having electrodes comprising nanowires, systems including same and methods of forming same
12/28/2010US7859035 Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the same
12/28/2010US7859034 Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
12/28/2010US7859030 Heterojunction bipolar transistor and fabrication method of the same
12/28/2010US7859029 FET (field-effect transistor); can detect a low concentration of ionic materials with high sensitivity
12/28/2010US7859028 Independently controlled, double gate nanowire memory cell with self-aligned contacts
12/28/2010US7859026 Vertical semiconductor device
12/28/2010US7859021 Field-effect semiconductor device
12/28/2010US7859019 Normally-off field-effect semiconductor device
12/28/2010US7859018 Semiconductor device having nitride semiconductor layer
12/28/2010US7859017 Normally-off field-effect semiconductor device
12/28/2010US7859016 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
12/28/2010US7859014 Semiconductor device
12/28/2010US7859012 Thyristor-based semiconductor memory device with back-gate bias
12/28/2010US7859011 High ion/Ioff SOI MOSFET using body voltage control
12/28/2010US7859010 Bi-directional semiconductor ESD protection device
12/28/2010US7859009 Integrated lateral high-voltage diode and thyristor
12/28/2010US7858999 Light-emitting chip device with high thermal conductivity
12/28/2010US7858997 Light emitting apparatus and light emitting method
12/28/2010US7858993 Light emitting device package and light unit having the same
12/28/2010US7858992 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus
12/28/2010US7858990 Device and process of forming device with pre-patterned trench and graphene-based device structure formed therein
12/28/2010US7858989 Device and process of forming device with device structure formed in trench and graphene layer formed thereover
12/28/2010US7858988 Dual gate layout for thin film transistor
12/28/2010US7858987 Semiconductor device and manufacturing method thereof
12/28/2010US7858985 Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
12/28/2010US7858984 Liquid crystal display device having a double layered structure and a single layered structure on the same layer
12/28/2010US7858983 Electrochromic display with current drive circuit
12/28/2010US7858982 Thin film transistor array panel and method for manufacturing the same
12/28/2010US7858981 Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
12/28/2010US7858980 Reduced active area in a phase change memory structure
12/28/2010US7858979 Method of aligning deposited nanotubes onto an etched feature using a spacer
12/28/2010US7858975 Organic field effect transistor systems and methods
12/28/2010US7858974 Organic light-emitting display panel and method of manufacturing the same
12/28/2010US7858968 Field effect transistor and method of fabricating the same
12/28/2010US7858967 Doped semiconductor material and process for production thereof
12/28/2010US7858966 Protected qubit based on superconducting current mirror
12/28/2010US7858965 Nanowire heterostructures
12/28/2010US7858964 Semiconductor device formed in a recrystallized layer
12/28/2010US7858962 AlInGaN light-emitting device
12/28/2010US7858960 Phase change memory device having dielectric layer for isolating contact structure formed by growth, semiconductor device having the same, and methods for manufacturing the devices
12/28/2010US7858959 nonvolatile semiconductor memory element, actuator element of micro-machine, sensor element for measuring physical displacement, filter element for communication, and optical switch element; good crystal property
12/28/2010US7858558 Superconducting thin film material and method of manufacturing the same
12/28/2010US7858536 Semiconductor device and method for manufacturing semiconductor device
12/28/2010US7858509 High-dielectric film substrate processing method
12/28/2010US7858479 Method and apparatus of fabricating semiconductor device
12/28/2010US7858474 Nonvolatile semiconductor memory device and manufacturing method thereof
12/28/2010US7858473 Flash memory device and method of manufacturing the same
12/28/2010US7858472 Scalable self-aligned dual floating gate memory cell array and methods of forming the array
12/28/2010US7858463 Semiconductor integrated circuit device and method of producing the same
12/28/2010US7858457 Methods of forming integrated circuit devices including a depletion barrier layer at source/drain regions
12/28/2010US7858456 Merged P-i-N Schottky structure
12/28/2010US7858454 Self-aligned T-gate carbon nanotube field effect transistor devices and method for forming the same
12/28/2010US7858453 Method of manufacturing semiconductor device and display device utilizing solution ejector
12/28/2010US7858450 Optic mask and manufacturing method of thin film transistor array panel using the same
12/28/2010US7858449 Thyristor device with carbon lifetime adjustment implant and its method of fabrication
12/28/2010US7858440 Stacked semiconductor chips
12/28/2010US7858433 Photoelectric converting film stack type solid-state image pickup device, and method of producing the same
12/28/2010US7858421 Method of forming metal-oxide-semiconductor transistor
12/28/2010US7858410 Surface emitting semiconductor laser, its manufacturing method, and manufacturing method of electron device
12/28/2010US7858409 White point compensated LEDs for LCD displays
12/28/2010US7858272 photomasks; photoresists; semiconductors
12/28/2010US7858181 Growth of single crystal nanowires
12/28/2010US7858034 an layout of cells comprising transistors, connected to a power source
12/28/2010US7856804 MEMS process and device
12/23/2010WO2010148271A2 Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation and devices made therewith
12/23/2010WO2010148266A2 Vertical junction field effect transistors and diodes having graded doped regions and methods of making
12/23/2010WO2010147205A1 Organic electronic device and method for producing the same
12/23/2010WO2010147032A1 Semiconductor device
12/23/2010WO2010147028A1 Method for manufacturing a plurality of semiconductor chips
12/23/2010WO2010146818A1 Three-dimensional acceleration sensor
12/23/2010WO2010146727A1 Semiconductor device and process for manufacture thereof
12/23/2010WO2010146692A1 Semiconductor device and method for manufacturing semiconductor device
12/23/2010WO2010146645A1 Semiconductor device and method for manufacturing semiconductor device
12/23/2010WO2010146641A1 Semiconductor device and process for manufacture thereof
12/23/2010WO2010146639A1 Nitride semiconductor device and method for manufacturing same
12/23/2010WO2010123262A3 Apparatus and method for manufacturing a polycrystalline silicon thin film
12/23/2010US20100325073 Nitrogen oxide sensitive field effect transistors for explosive detection comprising functionalized non-oxidized silicon nanowires
12/23/2010US20100323500 System and Process for Producing Nanowire Composites and Electronic Substrates Therefrom
12/23/2010US20100322013 Nonvolatile Semiconductor Memory Device
12/23/2010US20100322009 Semiconductor memory device including charge accumulation layer
12/23/2010US20100321993 Methods of forming spin torque devices and structures formed thereby
12/23/2010US20100321840 Bottom source NMOS triggered zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS)
12/23/2010US20100321548 Mos sensor and drive method thereof
1 ... 622 623 624 625 626 627 628 629 630 631 632 633 634 635 636 637 638 639 640 641 642 ... 2182