Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2010
11/09/2010US7829924 Semiconductor device and method for fabricating the same
11/09/2010US7829919 Semiconductor device
11/09/2010US7829918 Field effect transistor based sensor
11/09/2010US7829917 Layout for self-aligned emitter-base processing
11/09/2010US7829916 Transistor with a germanium-based channel encased by a gate electrode and method for producing one such transistor
11/09/2010US7829910 Light emitting device and method of fabricating light emitting device
11/09/2010US7829903 Light emitting apparatus
11/09/2010US7829899 Multi-element LED lamp package
11/09/2010US7829898 Power semiconductor device having raised channel and manufacturing method thereof
11/09/2010US7829896 Thin film transistor, manufacturing method thereof, and TFT LCD using the same
11/09/2010US7829895 Pixel structure and repairing method thereof
11/09/2010US7829894 Light emitting device, method for manufacturing thereof and electronic appliance
11/09/2010US7829892 Integrated circuit including a gate electrode
11/09/2010US7829888 Organic light emitting diode display device and method of manufacturing the same
11/09/2010US7829887 Organic light emitting diode display device and method of manufacturing the same
11/09/2010US7829883 Vertical carbon nanotube field effect transistors and arrays
11/09/2010US7829882 Nitride semiconductor light emitting device
11/09/2010US7829881 Semiconductor light emitting device having roughness and method of fabricating the same
11/09/2010US7829880 Quantum dot semiconductor device
11/09/2010US7829879 Integrated circuit including U-shaped access device
11/09/2010US7829455 Method for creating barriers for copper diffusion
11/09/2010US7829429 Semiconductor device having localized insulated block in bulk substrate and related method
11/09/2010US7829411 Method and device to form high quality oxide layers of different thickness in one processing step
11/09/2010US7829407 Method of fabricating a stressed MOSFET by bending SOI region
11/09/2010US7829404 Method of making a semiconductor memory array of floating gate memory cells with program/erase and select gates
11/09/2010US7829391 Active matrix substrate, method of making the substrate, and display device
11/09/2010US7829374 Silicon carbide semiconductor device and method for manufacturing the same
11/09/2010US7829364 Method of fabricating a suspension microstructure
11/09/2010US7829362 Field-effect transistor, sensor using it, and production method thereof
11/09/2010US7829189 comprising ZnSSe, ZnSeTe, ZnSTe, CdSSe, CdSeTe, CdSTe, HgSSe, HgSeTe, HgSTe, ZnHgSSe, or ZnHgSeTe nanocrystal particles; organic electroluminescent device; stable, high quantum efficiency and uniform sizes and shapes
11/09/2010US7829154 vacuum depositing the semiconductor homogeneous particles with a desired size; electrically charging the jetted fine liquid droplets
11/09/2010US7829144 Method of forming a metal film for electrode
11/09/2010US7828618 Super-thin OLED and method for manufacturing the same
11/09/2010US7827865 Semiconductor acceleration sensor
11/04/2010WO2010127370A2 Series current limiting device
11/04/2010WO2010127184A1 Quality control process for umg-si feedstock
11/04/2010WO2010126768A1 Threshold voltage adjustment through gate dielectric stack modification
11/04/2010WO2010126468A1 Dense nanoscale logic circuitry
11/04/2010WO2010126288A1 High-electron mobility transistor
11/04/2010WO2010126287A1 Photodiodes with surface plasmon couplers
11/04/2010WO2010126285A1 Piezoelectric actuator
11/04/2010WO2010126001A1 Process and apparatus for producing crystalline film
11/04/2010WO2010125993A1 Ink composition for forming light-shielding film for organic semiconductor element, method for forming light-shielding film, and organic transistor element having light-shielding film
11/04/2010WO2010125986A1 Method for manufacturing semiconductor device
11/04/2010WO2010125978A1 Laser illumination device, illumination method, semiconductor element fabrication method, projection-type display device, and image display method using projection-type display device
11/04/2010WO2010125882A1 Transverse junction field effect transistor
11/04/2010WO2010125819A1 Semiconductor element, semiconductor device, and power converter
11/04/2010WO2010125810A1 Semiconductor device and method for fabricating same
11/04/2010WO2010125695A1 Programming method for nand flash memory device
11/04/2010WO2010125661A1 Semiconductor device and method for manufacturing the same
11/04/2010WO2010125641A1 Tunneling magnetic resistance effect element, and magnetic memory cell and random access memory using the element
11/04/2010WO2010125639A1 Power semiconductor device
11/04/2010WO2010088257A3 Short channel transistor with reduced length variation by using amorphous electrode material during implantation
11/04/2010WO2010087655A3 Fullerene derivatives and organic electronic device comprising the same
11/04/2010US20100279481 Control of dopant diffusion from buried layers in bipolar integrated circuits
11/04/2010US20100279476 Manufacturing Method for Field-Effect Transistor
11/04/2010US20100279426 Electronic Switching, Memory, and Sensor Devices from Carbon Sheets on Dielectric Materials
11/04/2010US20100277984 Nonvolatile semiconductor memory
11/04/2010US20100277976 Magnetic memory devices including magnetic layers having different products of saturated magnetization and thickness and related methods
11/04/2010US20100277466 Transistor with enhanced capacitance at electrodes and transistor with light emitting capacitive element
11/04/2010US20100276790 Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer material
11/04/2010US20100276789 Semiconductor device having multiple-layer hard mask with opposite stresses and method for fabricating the same
11/04/2010US20100276788 Method and device of preventing delamination of semiconductor layers
11/04/2010US20100276785 Doping of semiconductor layer for improved efficiency of semiconductor structures
11/04/2010US20100276784 Electronic components on trenched substrates and method of forming same
11/04/2010US20100276781 Semiconductor Constructions
11/04/2010US20100276780 Memory Arrays
11/04/2010US20100276779 Transient Voltage Suppressor Having Symmetrical Breakdown Voltages
11/04/2010US20100276771 Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same
11/04/2010US20100276769 Semiconductor device
11/04/2010US20100276768 Sidewall coating for non-uniform spin momentum-transfer magnetic tunnel junction current flow
11/04/2010US20100276767 Mems microphone with cavity and method therefor
11/04/2010US20100276766 Shielding for a micro electro-mechanical device and method therefor
11/04/2010US20100276765 Semiconductor device and method of manufacturing the same
11/04/2010US20100276764 Semiconductor structure with selectively deposited tungsten film and method for making the same
11/04/2010US20100276763 Lga substrate and method of making same
11/04/2010US20100276762 Semiconductor device
11/04/2010US20100276761 Non-Planar Transistors and Methods of Fabrication Thereof
11/04/2010US20100276758 Stressed semiconductor using carbon and method for producing the same
11/04/2010US20100276756 Substrate fins with different heights
11/04/2010US20100276755 Electrostatic discharge protection device and method for fabricating the same
11/04/2010US20100276751 Integrated circuit utilizing trench-type power mos transistor
11/04/2010US20100276750 Metal Oxide Semiconductor (MOS) Structure and Manufacturing Method Thereof
11/04/2010US20100276749 Vertical transistors
11/04/2010US20100276748 Method of forming lutetium and lanthanum dielectric structures
11/04/2010US20100276747 Charge trapping layer, method of forming the charge trapping layer, non-volatile memory device using the same and method of fabricating the non-volatile memory device
11/04/2010US20100276746 Sonos memory cells having non-uniform tunnel oxide and methods for fabricating same
11/04/2010US20100276745 Electrically programmable device with embedded eeprom and method for making thereof
11/04/2010US20100276744 Non-volatile memory device and method for fabricating the same
11/04/2010US20100276743 Semiconductor memory device and method for manufacturing same
11/04/2010US20100276742 Random access memory device utilizing a vertically oriented select transistor
11/04/2010US20100276741 Integrated circuit with buried digit line
11/04/2010US20100276739 Semiconductor device and method for fabricating the same
11/04/2010US20100276733 Solid-state circuit device
11/04/2010US20100276732 Semiconductor device
11/04/2010US20100276731 Inorganic Nanocrystal Bulk Heterojunctions
11/04/2010US20100276730 Semiconductor device
11/04/2010US20100276729 Semiconductor device, manufacturing method thereof, and manufacturing method of trench gate
11/04/2010US20100276728 Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active area
11/04/2010US20100276727 Reverse-conducting semiconductor device
1 ... 640 641 642 643 644 645 646 647 648 649 650 651 652 653 654 655 656 657 658 659 660 ... 2182