Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2010
12/29/2010WO2010150324A1 Semiconductor device manufacturing method
12/29/2010WO2010150135A2 Method for treating a semiconductor wafer
12/29/2010WO2010150134A2 Method for treating a semiconductor wafer
12/29/2010WO2010149762A2 Biocompatible packaging
12/29/2010WO2010149058A1 Cmosfet structure for controlling threshold voltage of device and making method thereof
12/29/2010WO2010117467A3 Bipolar transistor with quantum well base and quantum well emitter
12/29/2010EP2267796A2 Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof
12/29/2010EP2267788A2 Semiconductor device with alternating conductivity type layer and method of manufacturing the same
12/29/2010EP2267787A2 Method of making a trench gate DMOS field-effect transistor
12/29/2010EP2267786A2 Trench gate DMOS field-effect transistor
12/29/2010EP2267785A2 Semiconductor component with a drift region and with a drift control region
12/29/2010EP2267784A2 Insulating gate AlGaN/GaN HEMT
12/29/2010EP2267783A2 Insulating gate algan/gan hemt
12/29/2010EP2267782A2 Control of tunneling junction in a hetero tunnel field effect transistor
12/29/2010EP2267775A2 Independently programmable memory segments in isolated N-wells within a PMOS EEPROM array
12/29/2010EP2267774A2 Method of forming a floating-gate memory array
12/29/2010EP2267772A1 Device for detecting thinning of the substrate of an integrated circuit chip
12/29/2010EP2267769A2 DRAM transistor with a gate formed in a substrate trench
12/29/2010EP2267767A2 Semiconductor device and method of fabricating the same
12/29/2010EP2267760A2 Layered dielectric on silicon carbide semiconductor structures
12/29/2010EP2267734A1 Half-metallic antiferromagnetic material
12/29/2010EP2267573A1 Reference-signal generator circuit for an analog-to-digital converter of a microelectromechanical acoustic transducer, and corresponding method
12/29/2010EP2266135A2 Semiconductor-based, large-area, flexible, electronic devices on {110}<100>oriented substrates
12/29/2010EP1410395B1 Pair wise programming method for dual cell eeprom
12/29/2010EP1210736B1 Method of forming a double recessed transistor
12/29/2010CN1885552B Light emission display device and thin film transistor
12/29/2010CN1816914B Semiconductor device, method of manufacturing a quantum well structure and a semiconductor device comprising such a quantum well structure
12/29/2010CN1658389B Semiconductor device and method for manufacturing the same
12/29/2010CN101933150A Thin film transistor using an oxide semiconductor and display
12/29/2010CN101933149A Semiconductor device, and method for manufacturing the same
12/29/2010CN101933148A Semiconductor element and method for manufacturing the same
12/29/2010CN101933147A Power transistor with protected channel
12/29/2010CN101933146A Silicon carbide semiconductor device
12/29/2010CN101933141A 半导体装置 Semiconductor device
12/29/2010CN101933140A Nanostructures and methods of making the same
12/29/2010CN101933126A Fabrication process of semiconductor device
12/29/2010CN101933125A Edge-contacted vertical carbon nanotube transistor
12/29/2010CN101931010A 二极管及其制造方法 Diode and its manufacturing method
12/29/2010CN101931009A Thin film transistor and method of producing thin film transistor
12/29/2010CN101931008A PD SOI device with body contact structure
12/29/2010CN101931007A 半导体装置 Semiconductor device
12/29/2010CN101931006A Transistor component having an amorphous semi-isolating channel control layer
12/29/2010CN101931005A Semiconductor device, method of manufacturing the same and power-supply device using the same
12/29/2010CN101931004A Structure of transverse diffusion metal oxide semiconductor field effect transistor
12/29/2010CN101931003A Forwardly and reversely symmetrical P-type radial varying doping and similar table-board negative angle shaped junction terminal thyristor
12/29/2010CN101931002A Reverse blocking diode thyristor
12/29/2010CN101931001A Asymmetrical fast thyristor
12/29/2010CN101931000A Semiconductor device and method for forming same
12/29/2010CN101930999A Impuritytransistor component having an amorphous channel control layer
12/29/2010CN101930998A Bipolar transistor structure and method including emitter-base interface
12/29/2010CN101930997A Thin-body bipolar device
12/29/2010CN101930996A 半导体结构及其形成方法 And a method for forming a semiconductor structure
12/29/2010CN101930995A Insulated gate bipolar transistor (IGBT) collector electrode made of germanium/aluminum and manufacturing method thereof
12/29/2010CN101930983A 集成电路结构 Integrated circuit structure
12/29/2010CN101930982A FLOTOX structure-based radioresistant EEPROM storage unit structure
12/29/2010CN101930980A Semiconductor device having saddle fin-shaped channel and method for manufacturing the same
12/29/2010CN101930979A CMOSFETs structure for controlling threshold voltage of device and manufacturing method thereof
12/29/2010CN101930978A Semiconductor assembly and manufacturing method thereof
12/29/2010CN101930976A 半导体装置 Semiconductor device
12/29/2010CN101930975A Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (tvs)
12/29/2010CN101930974A Bottom source nmos triggered zener clamp for configuring an ultra-low voltage transient voltage suppressor (tvs)
12/29/2010CN101930920A MOS (Metal Oxide Semiconductor) transistor and manufacture method thereof
12/29/2010CN101930919A Semiconductor device and manufacture method thereof
12/29/2010CN101930805A IGZO-based oxide material and method of producing IGZO-based oxide material
12/29/2010CN101599507B Lateral double-diffused metal-oxide-semiconductor transistor of silicon on N-type insulator
12/29/2010CN101441331B Semiconductor device including semiconductor thin film, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film
12/29/2010CN101436612B Field effect transistor and method for forming the same
12/29/2010CN101427379B Transistor and method with dual layer passivation
12/29/2010CN101388394B Vertical nonvolatile memory cell, array, and operation
12/29/2010CN101383282B Method for wet processing wafer in fabrication of semiconductor integrated circuit device
12/29/2010CN101218667B Semiconductor device and its making method
12/29/2010CA2757818A1 Fet with replacement gate structure and method of fabricating the same
12/28/2010USRE42008 Nitride semiconductor device
12/28/2010USRE42007 Vertical geometry InGaN LED
12/28/2010US7860499 Switch circuit and method of switching radio frequency signals
12/28/2010US7859825 High yield, high density on-chip capacitor design
12/28/2010US7859637 Use of a storage capacitor to enhance the performance of an active matrix driven electronic display
12/28/2010US7859628 IPS LCD having auxiliary common electrode lines
12/28/2010US7859621 Integral-type liquid crystal panel with image sensor function
12/28/2010US7859616 Liquid crystal display apparatus
12/28/2010US7859603 Electro-optical device and electronic apparatus
12/28/2010US7859187 Display device and method for fabricating the same
12/28/2010US7859123 Wire bonding structure and manufacturing method thereof
12/28/2010US7859114 IC chip and design structure with through wafer vias dishing correction
12/28/2010US7859111 Computer implemented method for designing a semiconductor device, an automated design system and a semiconductor device
12/28/2010US7859105 Power converter, power system provided with same, and mobile body
12/28/2010US7859093 Method for protecting encapsulated sensor structures using stack packaging
12/28/2010US7859086 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same
12/28/2010US7859085 Semiconductor device and method of forming embedded passive circuit elements interconnected to through hole vias
12/28/2010US7859083 Semiconductor device
12/28/2010US7859082 Lateral bipolar transistor and method of production
12/28/2010US7859081 Capacitor, method of increasing a capacitance area of same, and system containing same
12/28/2010US7859079 Power semiconductor device
12/28/2010US7859076 Edge termination for semiconductor device
12/28/2010US7859071 Power and communication interface for sensors using a single tethered fiber
12/28/2010US7859068 Integrated circuit encapsulation and method therefor
12/28/2010US7859067 Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed and methods for fabricating same
12/28/2010US7859064 Semiconductor devices including channel and junction regions of different semiconductor materials
12/28/2010US7859062 Systems and methods for integrated circuits comprising multiple body biasing domains
12/28/2010US7859061 Halo-first ultra-thin SOI FET for superior short channel control
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