Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2010
12/01/2010CN101903993A Method for forming semiconductor thin film and method for manufacturing thin film semiconductor device
12/01/2010CN101903992A Improved manufacturing method for planar independent-gate or gate-all-around transistors
12/01/2010CN101903974A Method for manufacturing thin film multilayer device, method for manufacturing display device, and thin film multilayer device
12/01/2010CN101902015A Semiconductor device and method of fabricating the same
12/01/2010CN101901858A Vertical structure semiconductor devices
12/01/2010CN101901841A Capacitor and preparation method thereof
12/01/2010CN101901840A Schottky diode device and manufacturing method thereof
12/01/2010CN101901839A Semiconductor device and manufacturing method thereof
12/01/2010CN101901838A Semiconductor device and manufacturing method thereof
12/01/2010CN101901837A Grid-controlled PN field effect transistor and control method thereof
12/01/2010CN101901836A 半导体器件 Semiconductor devices
12/01/2010CN101901835A High voltage low resistance MOSFET device and its manufacture method
12/01/2010CN101901834A Field effect transistor and manufacturing method therefor
12/01/2010CN101901833A Monodirectional silicon controlled rectifier structure for improving switching speed and production method thereof
12/01/2010CN101901832A Controlled silicon punchthrough structure formed by gallium diffusion and production method thereof
12/01/2010CN101901831A SCR ESD protection structure with high maintaining voltage
12/01/2010CN101901830A Forward and reverse conduction lateral insulated gate bipolar transistor of silicon on insulator
12/01/2010CN101901829A Electrostatic discharge protection structure and manufacturing method thereof
12/01/2010CN101901828A Method of producing a semiconductor device
12/01/2010CN101901827A Core/shell type wurtzite/blende ZnS hetero nano structure and preparation method thereof
12/01/2010CN101901815A Semiconductor device and semiconductor integrated circuit using the same
12/01/2010CN101901813A Semiconductor memory with vertical structure and manufacturing method thereof
12/01/2010CN101901812A Semiconductor storage device, electronic device and its forming method
12/01/2010CN101901811A Bandgap engineered charge trapping memory in two-transistor NOR architecture
12/01/2010CN101901808A Trench-type Schottky-barrier diode rectifier and preparation method
12/01/2010CN101901807A Channel schottky barrier diode rectifying device and manufacturing method
12/01/2010CN101901806A AC-DC conversion integrated element and integrated circuit using same
12/01/2010CN101901805A Power semiconductor device having a sense field-effect-transistor
12/01/2010CN101901804A Layout structure of VDMOS (Vertical Double-diffused Metal Oxidation Semiconductor) devices and production method thereof
12/01/2010CN101901787A Oxide thin film transistor and method of fabricating the same
12/01/2010CN101901768A Semiconductor device and manufacturing method thereof
12/01/2010CN101901766A Integrated circuit structure and method of forming the same
12/01/2010CN101900746A Acceleration sensor element and acceleration sensor having same
12/01/2010CN101572270B Metal oxide semiconductor transistor
12/01/2010CN101546075B Multi-domain vertical alignment (MVA) pixel structure
12/01/2010CN101533775B Thin film transistor and production method thereof
12/01/2010CN101510549B Transversal device of semiconductor
12/01/2010CN101501840B Chip attack protection
12/01/2010CN101494239B High speed IGBT
12/01/2010CN101478006B Terahertz GaN Gunn diode based on conducting type SiC substrate and manufacturing process thereof
12/01/2010CN101416313B Power IC device and method for manufacturing same
12/01/2010CN101414638B Display device and method of manufacturing display device
12/01/2010CN101414627B Insulated gate type source-leakage composite field plate transistor with high electron mobility and preparing method thereof
12/01/2010CN101414625B Groove gate type gate-leakage composite field plate transistor with high electron mobility
12/01/2010CN101400599B Method for mounting anisotropically-shaped member
12/01/2010CN101359667B Semiconductor device comprising a group iii / nitride material and method of fabricating the same
12/01/2010CN101355085B Vertical floating body cell of a semiconductor device and method for fabricating the same
12/01/2010CN101336482B Low density drain hemts
12/01/2010CN101335209B Flash memory device and methods for fabricating the same
12/01/2010CN101278403B Semiconductor device and manufacture method thereof
12/01/2010CN101262009B Manufacture method of FET devices
12/01/2010CN101253618B Thin-film element, display device and memory cell using the thin-film element, and their fabrication method
12/01/2010CN101252104B Methods of forming wiring to transistor and related transistor
12/01/2010CN101241913B CMOS device, semiconductor device and a method of fabricating the device
12/01/2010CN101221982B Heterojunction bipolar transistor and its forming method
12/01/2010CN101208786B Transistor with improved tip profile and method of manufacture thereof
12/01/2010CN101194350B Raised source and drain process with disposable spacers
12/01/2010CN101123258B Image display system and method for fabricating the same
12/01/2010CN101114670B Schottky barrier semiconductor device
12/01/2010CN101064345B Thin film transistor and method of fabricating the same
12/01/2010CN101034716B Method of forming an mos transistor
11/2010
11/30/2010USRE41975 Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same
11/30/2010US7843407 Electronic device and electronic apparatus
11/30/2010US7843259 Field effect transistor circuit and method of operation of field effect transistor circuit for reducing thermal runaway
11/30/2010US7843075 Apparatus and methods of forming an interconnect between a workpiece and substrate
11/30/2010US7843074 Underfill for light emitting device
11/30/2010US7843071 Semiconductor device including wiring and manufacturing method thereof
11/30/2010US7843070 Nanotube and metal composite interconnects
11/30/2010US7843068 Semiconductor chip and method of manufacturing the same
11/30/2010US7843065 Flash memory device and fabricating method thereof
11/30/2010US7843063 incorporation of cobalt into a copper interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies
11/30/2010US7843060 Droop-free high output light emitting devices and methods of fabricating and operating same
11/30/2010US7843053 Stack package made of chip scale packages
11/30/2010US7843041 Thin-film circuit device having a low strength region, method for manufacturing the thin-film circuit device, and electronic apparatus
11/30/2010US7843040 Gallium nitride baseplate and epitaxial substrate
11/30/2010US7843039 Stress-modified device structures, methods of fabricating such stress-modified device structures, and design structures for an integrated circuit
11/30/2010US7843038 High linearity digital variable gain amplifier
11/30/2010US7843037 High level integration phase change memory device having an increased diode junction area and method for manufacturing the same
11/30/2010US7843035 MIM capacitors with catalytic activation layer
11/30/2010US7843034 Capacitor having upper electrode not formed over device isolation region
11/30/2010US7843031 Ultraviolet detecting device and manufacturing method thereof, and ultraviolet quantity measuring apparatus
11/30/2010US7843025 Micromechanical semiconductor sensor
11/30/2010US7843024 Method and structure for improving device performance variation in dual stress liner technology
11/30/2010US7843022 High-temperature electrostatic transducers and fabrication method
11/30/2010US7843021 Double-side mountable MEMS package
11/30/2010US7843020 High withstand voltage transistor and manufacturing method thereof, and semiconductor device adopting high withstand voltage transistor
11/30/2010US7843019 Seal ring for mixed circuitry semiconductor devices
11/30/2010US7843018 Transistor providing different threshold voltages and method of fabrication thereof
11/30/2010US7843016 Asymmetric field effect transistor structure and method
11/30/2010US7843015 Multi-silicide system in integrated circuit technology
11/30/2010US7843013 Semiconductor device and method for fabricating the same
11/30/2010US7843007 Metal high-k transistor having silicon sidewall for reduced parasitic capacitance
11/30/2010US7843004 Power MOSFET with recessed field plate
11/30/2010US7843003 Insulated gate semiconductor device
11/30/2010US7843001 Insulated gate type semiconductor device and method for fabricating the same
11/30/2010US7843000 Semiconductor device having multiple fin heights
11/30/2010US7842998 Nonvolatile semiconductor memory device and method for manufacturing the same
11/30/2010US7842996 Memory cell of nonvolatile semiconductor memory
11/30/2010US7842995 Multi-bit non-volatile memory devices and methods of fabricating the same
11/30/2010US7842994 Nonvolatile memory transistor having poly-silicon fin, stacked nonvolatile memory device having the transistor, method of fabricating the transistor, and method of fabricating the device
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