Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2010
11/16/2010US7834346 Nitrogenous heterocyclic derivative and organic electroluminescence device making use of the same
11/16/2010US7834345 Tunnel field-effect transistors with superlattice channels
11/16/2010US7834343 Nitride semiconductor and method for manufacturing thereof
11/16/2010US7834341 Phase change material (PCM) memory devices with bipolar junction transistors and methods for making thereof
11/16/2010US7834340 Phase change memory devices and methods of fabricating the same
11/16/2010US7834338 Memory cell comprising nickel-cobalt oxide switching element
11/16/2010US7834337 Memory device
11/16/2010US7834264 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
11/16/2010US7833894 Devices and systems having at least one dam structure
11/16/2010US7833891 Semiconductor device manufacturing method using oxygen diffusion barrier layer between buried oxide layer and high K dielectric layer
11/16/2010US7833870 Method for fabricating semiconductor device having recessed gate electrode and self-aligning stacked contact structures
11/16/2010US7833869 Methods for forming a transistor
11/16/2010US7833868 Method for fabricating a semiconductor device having recessed gate electrode and elevated source and drain regions
11/16/2010US7833865 Method of manufacturing a semiconductor device including a LaAIO3 layer
11/16/2010US7833864 Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrate
11/16/2010US7833863 Method of manufacturing a closed cell trench MOSFET
11/16/2010US7833858 Superjunction trench device formation methods
11/16/2010US7833857 ESD protecting circuit and manufacturing method thereof
11/16/2010US7833856 Semiconductor device and method of manufacturing same
11/16/2010US7833855 Methods of producing integrated circuit devices utilizing tantalum amine derivatives
11/16/2010US7833851 Semiconductor device and manufacturing method thereof
11/16/2010US7833846 Array substrate and method of fabricating the same
11/16/2010US7833840 Integrated circuit package system with down-set die pad and method of manufacture thereof
11/16/2010US7833833 Method of manufacturing a semiconductor device
11/16/2010US7833832 Method of fabricating semiconductor components with through interconnects
11/16/2010US7833811 Side-emitting LED package and method of manufacturing the same
11/16/2010US7833633 A first electrode; stacked organic film layers including red, green and blue emission layers and an electron transporting layer; and a second electrode; electron transport layers have differing thicknesses; excellent color purity and improved brightness of red and green colors
11/16/2010US7833405 doped areas are first selectively anodized (porous etching), which is carried out locally by means of a monocrystalline cover layer, e.g., an epitaxial layer, followed by a time-controlled switch to selective electropolishing of doped layer buried under the membrane to produce a cavity under cover layer
11/16/2010US7833349 Phase shifter for laser annealing
11/11/2010WO2010129482A2 Controlled quantum dot growth
11/11/2010WO2010129186A1 Systems and methods for fabricating high-density capacitors
11/11/2010WO2010129083A1 Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
11/11/2010WO2010128629A1 Oxide sintered body sputtering target, method for producing the target, gate insulating film formed from oxide, and method for heat-treating the gate insulating film
11/11/2010WO2010128571A1 Semiconductor device and method of producing same
11/11/2010WO2010128546A1 Semiconductor device and method for manufacturing same
11/11/2010US20100285770 Wireless communication system
11/11/2010US20100285640 Etchant for etching metal wiring layers and method for forming thin film transistor by using the same
11/11/2010US20100284218 Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device
11/11/2010US20100284214 Electronically scannable multiplexing device
11/11/2010US20100283537 Tantalum aluminum oxynitride high-k dielectric
11/11/2010US20100283529 Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
11/11/2010US20100283133 Film-forming composition, insulating film with low dielectric constant, formation method thereof, and semiconductor device
11/11/2010US20100283132 ECR-plasma source and methods for treatment of semiconductor structures
11/11/2010US20100283126 Semiconductor device and manufacturing method thereof
11/11/2010US20100283125 Semiconductor device and method of manufacturing the same
11/11/2010US20100283123 Bipolar junction transistor integrated with pip capacitor and method for making the same
11/11/2010US20100283122 Systems and methods for providing high-density capacitors
11/11/2010US20100283119 Semiconductor Device Including a Deep Contact and a Method of Manufacturing Such a Device
11/11/2010US20100283118 Oxidation after oxide dissolution
11/11/2010US20100283117 Fuse box guard rings including protrusions and methods of forming same
11/11/2010US20100283115 Schottky diode with improved high current behavior and method for its production
11/11/2010US20100283114 Chip-type semiconductor ceramic electronic component
11/11/2010US20100283110 Integrated sensor chip unit
11/11/2010US20100283109 Mosfet having a channel mechanically stressed by an epitaxially grown, high k strain layer
11/11/2010US20100283108 Semiconductor device and method of manufacturing the same
11/11/2010US20100283107 MOS Transistor With Better Short Channel Effect Control and Corresponding Manufacturing Method
11/11/2010US20100283106 Semiconductor device having semiconductor layer on insulating structure and method of manufacturing the same
11/11/2010US20100283105 Semiconductor device and method for manufacturing the same
11/11/2010US20100283104 Semiconductor device and method for manufacturing the same
11/11/2010US20100283103 Semiconductor device manufacturing method, semiconductor device and display apparatus
11/11/2010US20100283102 Vertical channel transistor in semiconductor device and method of fabricating the same
11/11/2010US20100283101 Patterning nanocrystal layers
11/11/2010US20100283100 Semiconductor memory comprising dual charge storage nodes and methods for its fabrication
11/11/2010US20100283099 Non-Volatile Semiconductor Memory Device and Manufacturing Method Thereof
11/11/2010US20100283097 Mos semiconductor memory device
11/11/2010US20100283096 Semiconductor device and method for fabricating the same
11/11/2010US20100283095 Flash Memory Device
11/11/2010US20100283089 Method of reducing stacking faults through annealing
11/11/2010US20100283088 Substrate-level interconnection and micro-electro-mechanical system
11/11/2010US20100283087 Electric Component
11/11/2010US20100283085 Massively Parallel Interconnect Fabric for Complex Semiconductor Devices
11/11/2010US20100283084 Bipolar transistor and method for fabricating the same
11/11/2010US20100283083 Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistor
11/11/2010US20100283082 Bipolar Transistor with Depleted Emitter
11/11/2010US20100283061 High temperature gate drivers for wide bandgap semiconductor power jfets and integrated circuits including the same
11/11/2010US20100283060 Field effect transistor
11/11/2010US20100283059 Semiconductor device and method for manufacturing same
11/11/2010US20100283058 Array substrate for a liquid crystal display device with thin film transistor having two drain electrode patterns and manufacturing method of the same
11/11/2010US20100283055 Tft substrate and tft substrate manufacturing method
11/11/2010US20100283054 Flexible semiconductor device and method for manufacturing same
11/11/2010US20100283053 Nonvolatile memory array comprising silicon-based diodes fabricated at low temperature
11/11/2010US20100283051 Monitor cell and monitor cell placement method
11/11/2010US20100283050 Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
11/11/2010US20100283049 Oxide semiconductor device including insulating layer and display apparatus using the same
11/11/2010US20100283042 Devices having high dielectric constant, ionically-polarizable materials
11/11/2010US20100283037 Core-shell quantum dot fluorescent fine particles
11/11/2010US20100283034 Concentration - gradient alloyed semiconductor quantum dots, LED and white light applications
11/11/2010US20100283033 Carbide nanostructures and methods for making same
11/11/2010US20100283032 Method for forming a semidconductor structure
11/11/2010US20100283031 Biosensor using nanodot and method of manufacturing the same
11/11/2010US20100282320 Photovoltaic Devices Including an Interfacial Layer
11/11/2010DE10261307B4 Verfahren zur Herstellung einer Spannungsoberflächenschicht in einem Halbleiterelement A process for producing a voltage in the surface layer of a semiconductor element
11/11/2010DE102009056453A1 Siliciumcarbidhalbleitervorrichtung und Herstellungsverfahren dafür Siliciumcarbidhalbleitervorrichtung and production method thereof
11/11/2010DE102009018054A1 Lateraler HEMT und Verfahren zur Herstellung eines lateralen HEMT Lateral HEMT and method for producing a lateral HEMT
11/11/2010DE102006040764B4 Halbleiterbauelement mit einem lokal vorgesehenem Metallsilizidgebiet in Kontaktbereichen und Herstellung desselben Of the same semiconductor device with a locally the intended metal silicide in contact areas and preparation
11/11/2010DE102005045910B4 Laterales SOI-Bauelement mit einem verringerten Einschaltwiderstand A lateral SOI device having a reduced on-resistance
11/11/2010DE102004059353B4 Halbleiter-Leistungsmodul Semiconductor power module
11/11/2010DE10005804B4 Verfahren zur Herstellung einer Halbleitervorrichtung, sowie durch dieses Verfahren hergestellter Halbleitersensor für eine physikalische Grösse A process for producing a semiconductor device, and produced by this process semiconductor sensor for a physical quantity
11/10/2010EP2249392A2 Reverse-conducting semiconductor device
11/10/2010EP2249391A2 Flat panel display
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