Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2010
11/23/2010US7838997 Remote chip attachment
11/23/2010US7838996 Semiconductor device
11/23/2010US7838970 Semiconductor component with high concentration doped zone embedded in emitter region
11/23/2010US7838969 Diode
11/23/2010US7838968 Semiconductor device and method of fabricating same
11/23/2010US7838965 ESD protected integrated capacitor with large capacity
11/23/2010US7838964 Micromodules including integrated thin film inductors
11/23/2010US7838963 Electrical fuse having a fully silicided fuselink and enhanced flux divergence
11/23/2010US7838962 Semiconductor device having capacitor, transistor and diffusion resistor and manufacturing method thereof
11/23/2010US7838961 Method of manufacturing semiconductor device
11/23/2010US7838960 Integrated circuit device and electronic instrument
11/23/2010US7838951 Semiconductor sensor and manufacturing method of the same
11/23/2010US7838950 Electro-mechanical component, such as a strained Si Fin-FET
11/23/2010US7838946 Method for fabricating semiconductor structure and structure of static random access memory
11/23/2010US7838945 Semiconductor device and manufacturing method thereof
11/23/2010US7838944 Non-volatile programmable memory cell and array for programmable logic array
11/23/2010US7838942 Substrate solution for back gate controlled SRAM with coexisting logic devices
11/23/2010US7838941 Electrostatic discharge protection device having a dual triggered transistor
11/23/2010US7838940 Drain-extended field effect transistor
11/23/2010US7838936 Semiconductor device and manufacturing method thereof, and liquid crystal display device
11/23/2010US7838935 Glass-based SOI structures
11/23/2010US7838934 Semiconductor device and method for manufacturing the same
11/23/2010US7838932 Raised STI structure and superdamascene technique for NMOSFET performance enhancement with embedded silicon carbon
11/23/2010US7838931 High voltage semiconductor devices with Schottky diodes
11/23/2010US7838930 Insulated-gate field-effect transistor with hypoabrupt step change in body dopant concentration below source/drain zone
11/23/2010US7838929 Semiconductor devices having a recessed active edge
11/23/2010US7838928 Word line to bit line spacing method and apparatus
11/23/2010US7838926 Semiconductor device
11/23/2010US7838925 Integrated circuit including a vertical transistor and method
11/23/2010US7838923 Lateral pocket implant charge trapping devices
11/23/2010US7838922 Electronic device including trenches and discontinuous storage elements
11/23/2010US7838921 Memory cell arrangements
11/23/2010US7838920 Trench memory structures and operation
11/23/2010US7838915 Semiconductor device having multi-gate structure and method of manufacturing the same
11/23/2010US7838914 Semiconductor device
11/23/2010US7838910 Memory devices including spacers of different materials
11/23/2010US7838909 Semiconductor device with trench structure
11/23/2010US7838907 Semiconductor device and power conversion device using the same
11/23/2010US7838906 Semiconductor device and method of manufacturing the same
11/23/2010US7838904 Nitride based semiconductor device with concave gate region
11/23/2010US7838903 A gallium nitride layer functions as an electron transit layer and is formed to exhibit, at least at a portion, A/B ratio of < 0.2 obtained by a photoluminescence measurement, where "A" is the light-emission intensity in the 500-600 nm band, "B" is the light-emission intensity at the GaN band-edge
11/23/2010US7838902 Single-chip common-drain JFET device and its applications
11/23/2010US7838901 Single-chip common-drain JFET device and its applications
11/23/2010US7838900 Single-chip common-drain JFET device and its applications
11/23/2010US7838899 Integrated circuit package system with image sensor system
11/23/2010US7838897 Light-emitting device and method for manufacturing the same
11/23/2010US7838895 Light-emitting diode chip package body and packaging method thereof
11/23/2010US7838893 Semiconductor optical device
11/23/2010US7838892 Optoelectronic semiconductor chip and method for forming a contact structure for making electrical contact with an optoelectronic semiconductor chip
11/23/2010US7838891 Light emitting device having a plurality of light emitting cells and package mounting the same
11/23/2010US7838889 Solid-state area illumination system
11/23/2010US7838888 Silcon carbide semiconductor device having schottky barrier diode and method for manufacturing the same
11/23/2010US7838886 Thin film transistor array panel
11/23/2010US7838884 Display device and fabrication method of display device
11/23/2010US7838883 Organic electroluminescent display device
11/23/2010US7838882 Thin film transistor substrate and liquid crystal display
11/23/2010US7838881 Active matrix substrate, display device, television apparatus, manufacturing method of an active matrix substrate, and manufacturing method of a display device
11/23/2010US7838880 Flat panel display device
11/23/2010US7838877 Information recording and reproducing apparatus
11/23/2010US7838876 Optoelectronic semiconductor device in which current spreading layer of sol gel material mixed with nanoparticles is mixed with wavelength conversion dyes
11/23/2010US7838875 Metal transistor device
11/23/2010US7838872 Organic thin film transistor array panel
11/23/2010US7838871 Organic field-effect transistor, flat panel display device including the same, and a method of manufacturing the organic field-effect transistor
11/23/2010US7838869 Dual band photodetector
11/23/2010US7838868 Optoelectronic architecture having compound conducting substrate
11/23/2010US7838867 Method of fabricating turning mirror using sacrificial spacer layer and device made therefrom
11/23/2010US7838866 Method of fabricating turning mirror using sacrificial spacer layer and device made therefrom
11/23/2010US7838865 Method for aligning elongated nanostructures
11/23/2010US7838864 Chalcogenide switch with laser recrystallized diode isolation device and use thereof in three dimensional memory arrays
11/23/2010US7838863 Semiconductor devices having resistive memory elements
11/23/2010US7838862 Phase random access memory with high density
11/23/2010US7838861 Integrated circuits; methods for manufacturing an integrated circuit and memory module
11/23/2010US7838860 Integrated circuit including vertical diode
11/23/2010US7838413 Method of manufacturing phase-change memory element
11/23/2010US7838392 Methods for forming III-V semiconductor device structures
11/23/2010US7838389 Enclosed void cavity for low dielectric constant insulator
11/23/2010US7838383 Methods for forming MOS capacitors
11/23/2010US7838368 Nanoscale fet
11/23/2010US7838352 Thin film transistor and method for fabricating the same
11/23/2010US7838349 Semiconductor device and method of manufacturing the same
11/23/2010US7838348 Semiconductor device
11/23/2010US7838346 Manufacturing method of semiconductor device
11/23/2010US7837792 Method for manufacturing semiconductor device
11/18/2010WO2010132587A2 High voltage iii-nitride semiconductor devices
11/18/2010WO2010132403A1 Schottky diodes containing high barrier metal islands in a low barrier metal layer and methods of forming the same
11/18/2010WO2010132319A1 Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization
11/18/2010WO2010132301A1 Magnetic nanotransistor
11/18/2010WO2010132144A1 Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
11/18/2010WO2010131764A1 Organic semiconductor material, organic semiconductor thin film, and organic thin-film transistor
11/18/2010WO2010131573A1 Insulating gate type bipolar transistor
11/18/2010WO2010131572A1 Semiconductor device
11/18/2010WO2010131571A1 Semiconductor device
11/18/2010WO2010131570A1 Silicon carbide substrate and semiconductor device
11/18/2010WO2010131568A1 Silicon carbide substrate, semiconductor device, and method for manufacturing silicon carbide substrate
11/18/2010WO2010131502A1 Thin film transistor and method for manufacturing same
11/18/2010WO2010131451A1 Epitaxial substrate for electronic device and process for producing same
11/18/2010WO2010131393A1 Wiring structure, wiring substrate, liquid crystal display panel, and method for manufacturing wiring structure
11/18/2010WO2010131312A1 Semiconductor device and method of producing same
11/18/2010WO2010131311A1 Semiconductor memory cell and method for manufacturing same
11/18/2010WO2010131310A1 Semiconductor memory cell and method for manufacturing same
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