Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2010
11/17/2010CN1734788B Thin film transistor and method of fabricating the same
11/17/2010CN101889347A Zno-group semiconductor element
11/17/2010CN101889302A Thin film transistor array substrate, display panel comprising the same, and method for manufacturing thin film transistor array substrate
11/17/2010CN101888236A Semiconductor integrated-circuit device
11/17/2010CN101887935A Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
11/17/2010CN101887919A Semiconductor device and manufacturing method thereof
11/17/2010CN101887918A Semiconductor device and manufacturing method thereof
11/17/2010CN101887917A Field-effect transistor and preparation method thereof
11/17/2010CN101887916A Asymmetric semiconductor devices and method of fabricating
11/17/2010CN101887915A Power mosfet package
11/17/2010CN101887914A Transistor unit
11/17/2010CN101887913A IGBT with improved collector structure
11/17/2010CN101887912A Insulated gate type bipolar transistor and manufacturing method thereof
11/17/2010CN101887911A Lateral bipolar junction transistor and manufacturing method thereof
11/17/2010CN101887910A Gate stack structure for semiconductor flash memory device and preparation method thereof
11/17/2010CN101887897A TFT-LCD (Thin Film Transistor Liquid Crystal Display) array base plate and manufacturing method thereof
11/17/2010CN101887895A Power transistor chip internally provided with enhancement metal-oxide-semiconductor field effect transistor (MOSFET) and applying circuit thereof
11/17/2010CN101887894A Static discharge protective device
11/17/2010CN101887858A Semiconductor device and manufacturing method thereof
11/17/2010CN101887857A Semiconductor device and manufacturing method thereof
11/17/2010CN101887856A Semiconductor device and manufacturing method thereof
11/17/2010CN101887855A Asymmetric voltage discharge tube and manufacturing method thereof
11/17/2010CN101887704A Semiconductor device having oxide semiconductor layer and manufacturing method thereof
11/17/2010CN101886962A An electronic pressure-sensing device
11/17/2010CN101885463A Development method of flexible pressure-sensitive element based on carbon nano-tube filled high polymer composite material
11/17/2010CN101587908B Recessed trench transistor structure
11/17/2010CN101548388B Method for manufacturing thin film transistor which uses an oxide semiconductor
11/17/2010CN101542741B Trench gate type transistor and method for manufacturing the same
11/17/2010CN101529570B Lateral trench mosfet with direct trench polysilicon contact and method of forming the same
11/17/2010CN101512769B Method for laterally grown of nanotubes and semiconductor
11/17/2010CN101369603B 电介质隔离型半导体装置 Dielectric isolation type semiconductor device
11/17/2010CN101356624B Laser annealing method and laser annealing apparatus
11/17/2010CN101320711B Metal-oxide-semiconductor transistor and preparation thereof
11/17/2010CN101217116B Semiconductor device, dynamic random access memory cell and manufacturing method thereof
11/17/2010CN101214946B Method for manufacturing carbon fibers and application thereof
11/17/2010CN101211984B Thin film transistor for liquid crystal display device
11/17/2010CN101180739B Semiconductor device with edge termination
11/17/2010CN101136328B Gate electrode of semiconductor device and method of forming same
11/17/2010CN101051655B Schottky part and semiconductor making process for making same
11/16/2010USRE41927 TFT LCD device having multi-layered pixel electrodes
11/16/2010US7834965 TFT array substrate, method for manufacturing the same, and liquid crystal display having the same
11/16/2010US7834948 Active matrix substrate and liquid crystal display device
11/16/2010US7834557 Organic light emitting display and method of manufacturing the same
11/16/2010US7834466 Semiconductor die with die pad pattern
11/16/2010US7834465 Semiconductor device, and manufacturing method of semiconductor device
11/16/2010US7834464 Semiconductor chip package, semiconductor chip assembly, and method for fabricating a device
11/16/2010US7834460 Method for manufacturing an electronic component and corresponding electronic component
11/16/2010US7834458 Interconnect structure for semiconductor devices
11/16/2010US7834456 Electrical contacts for CMOS devices and III-V devices formed on a silicon substrate
11/16/2010US7834455 Semiconductor device
11/16/2010US7834440 Semiconductor device with stacked memory and processor LSIs
11/16/2010US7834427 Integrated circuit having a semiconductor arrangement
11/16/2010US7834425 Hybrid orientation SOI substrates, and method for forming the same
11/16/2010US7834424 Extendable connector and network
11/16/2010US7834423 Method of producing a nitride semiconductor device and nitride semiconductor device
11/16/2010US7834422 Implanted counted dopant ions
11/16/2010US7834421 Isolated diode
11/16/2010US7834420 Semiconductor integrated circuit device and process for manufacturing the same
11/16/2010US7834419 Semiconductor device and method for fabricating the same
11/16/2010US7834418 Semiconductor device
11/16/2010US7834416 Trench-constrained isolation diffusion for integrated circuit die
11/16/2010US7834415 Semiconductor device with trench isolation structure and method of manufacturing the same
11/16/2010US7834414 Semiconductor device with tensile strain and compressive strain
11/16/2010US7834410 Spin torque transfer magnetic tunnel junction structure
11/16/2010US7834409 Micromechanical component and corresponding method for its manufacture
11/16/2010US7834408 Semiconductor device and method for manufacturing the same
11/16/2010US7834406 High-voltage metal-oxide-semiconductor device and method of manufacturing the same
11/16/2010US7834405 Semiconductor device including I/O oxide and nitrided core oxide on substrate
11/16/2010US7834403 Bipolar transistor FINFET technology
11/16/2010US7834399 Dual stress memorization technique for CMOS application
11/16/2010US7834398 Method of manufacturing a semiconductor device
11/16/2010US7834396 Lateral field effect transistor and its fabrication comprising a spacer layer above and below the channel layer
11/16/2010US7834394 Semiconductor structure and method of fabricating the same
11/16/2010US7834393 Semiconductor device and manufacturing method of the semiconductor device
11/16/2010US7834392 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
11/16/2010US7834391 Integrated circuit memory devices including memory cells on adjacent pedestals having different heights, and methods of fabricating same
11/16/2010US7834390 Nonvolatile semiconductor memory device and method of manufacturing the same
11/16/2010US7834389 Triangular space element for semiconductor device
11/16/2010US7834388 Memory array of non-volatile electrically alterable memory cells for storing multiple data
11/16/2010US7834387 Metal gate compatible flash memory gate stack
11/16/2010US7834386 Non-volatile memory with epitaxial regions for limiting cross coupling between floating gates
11/16/2010US7834385 Multi-bit STRAM memory cells
11/16/2010US7834380 Field effect transistor and method for fabricating the same
11/16/2010US7834378 SCR controlled by the power bias
11/16/2010US7834377 Semiconductor integrated circuit device
11/16/2010US7834376 Power semiconductor switch
11/16/2010US7834368 Light-emitting diode having additional stack structure
11/16/2010US7834366 Semiconductor device having a group III nitride semiconductor layer
11/16/2010US7834365 LED chip package structure with high-efficiency light-emitting effect and method of packing the same
11/16/2010US7834363 Light-emitting element having PNPN-structure and light-emitting element array
11/16/2010US7834361 Pixel structure and method for manufacturing the same
11/16/2010US7834359 Electro-optical device, transferred chip, and transfer origin substrate
11/16/2010US7834358 Semiconductor LSI circuit and a method for fabricating the semiconductor LSI circuit
11/16/2010US7834357 Structure of thin film transistor
11/16/2010US7834356 Semiconductor device and method of fabricating the same
11/16/2010US7834355 Display device and electronic device
11/16/2010US7834354 Pixel structure and method for manufacturing the same
11/16/2010US7834353 Method of manufacturing display device
11/16/2010US7834349 Silicon based nanospheres and nanowires
11/16/2010US7834347 Organic transistor having a non-planar semiconductor-insulating layer interface
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