Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2010
11/04/2010US20100276702 Doped Diamond LED Devices and Associated Methods
11/04/2010US20100276701 Low thermal resistance and robust chip-scale-package (csp), structure and method
11/04/2010US20100276699 Silicon Carbide and Related Wide Bandgap Semiconductor Based Optically-Controlled Power Switching Devices
11/04/2010US20100276698 Gate electrodes for millimeter-wave operation and methods of fabrication
11/04/2010US20100276697 Semiconductor device
11/04/2010US20100276696 Semiconductor Device and Method of Fabricating the Same
11/04/2010US20100276695 Display device and manufacturing method thereof
11/04/2010US20100276693 Finfet field effect transistor insulated from the substrate
11/04/2010US20100276692 Thin Film Transistor, Method For Manufacturing The Same And Display Using The Same
11/04/2010US20100276691 Method for fabricating flexible semiconductor device and layered film used therefore
11/04/2010US20100276689 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
11/04/2010US20100276688 Oxide semiconductor field effect transistor and method for manufacturing the same
11/04/2010US20100276686 Thin film transistor substrate and method of fabricating the same
11/04/2010US20100276685 Amorphous oxide and field effect transistor
11/04/2010US20100276684 Rectifier and Process for Producing the Rectifier
11/04/2010US20100276683 Oxide semiconductor and thin film transistor including the same
11/04/2010US20100276682 Oxide semiconductor thin-film transistor
11/04/2010US20100276669 Electric nanodevice and method of manufacturing same
11/04/2010US20100276668 Reducing Source/Drain Resistance of III-V Based Transistors
11/04/2010US20100276667 Nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes and a method for fabricating the same
11/04/2010US20100276666 Controlled quantum dot growth
11/04/2010US20100276665 Production of semiconductor devices
11/04/2010US20100276664 Thin-walled structures
11/04/2010US20100276662 Junctionless metal-oxide-semiconductor transistor
11/04/2010US20100276604 Image detecting device
11/04/2010US20100276003 Layered film and manufacturing method thereof, photoelectric conversion device and manufacturing method thereof, and solar cell apparatus
11/04/2010US20100276001 Metal composite substrate and method of producing the same
11/04/2010US20100275997 Conductive compositions and processes for use in the manufacture of semiconductor devices: mg-containing additive
11/04/2010DE19680529B4 Verfahren zur Herstellung von Hochdruck-Silicium-oxynitrid (Oxynitrid)-Gate-Dielektrika für Metalloxid Halbleiter (MOS)-Vorrichtungen mit polykristallinen P+-Silicium (Polysilicium)-Gate-Elektroden A process for producing high-pressure silicon oxynitride (oxynitride) gate dielectrics for metal oxide semiconductor (MOS) devices with P + polycrystalline-silicon (polysilicon) gate electrode
11/04/2010DE112008002423T5 Ladungsausgleich in der Aktivfläche und Kantenabschlussfläche eines MOSFETs Charge balance in the active area and edge termination area of ​​a MOSFET
11/04/2010DE102009056310A1 Verfahren zur Herstellung einer Siliciumcarbid-Halbleitervorrichtung und Siliciumcarbid-Halbleitervorrichtung A process for producing a silicon carbide semiconductor device and the silicon carbide semiconductor device
11/04/2010DE102009018971A1 Konstruktion einer Schottkydiode mit verbessertem Hochstromverhalten und Verfahren zu deren Herstellung Construction of a Schottky diode with improved high-current behavior and process for their preparation
11/04/2010DE102009002723A1 Messelement Measuring element
11/04/2010DE102008048651B4 Verfahren zur Herstellung eines Halbleiterbauelements mit zwei Kondensatoren A process for producing a semiconductor device with two capacitors
11/04/2010CA2751823A1 Lateral junction field-effect transistor
11/03/2010EP2246895A1 Semiconductor device, and method for manufacturing the same
11/03/2010EP2246894A1 Amorphous oxide and thin film transistor
11/03/2010EP2246893A2 Semiconductor device including a MOS transistor and a production method therefor
11/03/2010EP2246892A2 Method of manufacturing quantum dots in a semiconductor device
11/03/2010EP2246880A1 Semiconductor device fabrication method
11/03/2010EP2246879A1 Method for manufacturing flexible semiconductor device and multilayer film used therein
11/03/2010EP2245681A1 Nanotube device
11/03/2010EP2245659A1 Memory device with local data lines and method of making and operating the same
11/03/2010EP1552529B1 Method and apparatus for erasing flash memory
11/03/2010EP1303883B1 Semiconductor arrangement with buried island and contact regions
11/03/2010CN201623017U Superhigh-voltage high-power thyristor ignition anode module
11/03/2010CN1941416B Ldmos device and method for manufacturing the same
11/03/2010CN1905213B Nonvolatile semiconductor memory device, and manufacturing method of nonvolatile semiconductor memory device
11/03/2010CN1856936B Strained-silicon voltage controlled oscillator (vco)
11/03/2010CN1855529B Semiconductor device having field stabilization film and method
11/03/2010CN1794468B 半导体器件 Semiconductor devices
11/03/2010CN1596464B Semiconductor device and method for manufacturing semiconductor device
11/03/2010CN101878534A Semiconductor device and display device
11/03/2010CN101878533A Electronic device with controlled electrical field
11/03/2010CN101878532A Process for fabricating an electronic device
11/03/2010CN101878527A Wafer level packaging using flip chip mounting
11/03/2010CN101878521A Methods of etching trenches into silicon of a semiconductor subtrate, methods of forming trench isolation in silicon of a semiconductor substrate, and methods of forming a plurality of diodes
11/03/2010CN101878207A Conjugated compound, nitrogenated condensed-ring compound, nitrogenated condensed-ring polymer, organic thin film, and organic thin film element
11/03/2010CN101877361A Resonant tunneling device of novel planer device structure
11/03/2010CN101877360A Integrated circuit structure
11/03/2010CN101877359A Insulated gate bipolar transistor and manufacturing method thereof
11/03/2010CN101877358A Transient voltage suppressor having symmetrical breakdown voltages
11/03/2010CN101877353A Semiconductor device and a production method therefor
11/03/2010CN101877352A Reverse-conducting semiconductor device
11/03/2010CN101877346A Static discharge protection system and static discharge protection circuit
11/03/2010CN101877329A OTP (One Time Programming) device and manufacture method
11/03/2010CN101877317A Non-planar transistors and methods of fabrication thereof
11/03/2010CN101877316A Isolation region implant and structure
11/03/2010CN101877315A Method for improving breakdown voltage of LDMOS devices
11/03/2010CN101877314A Method for manufacturing thick oxide layer at bottom of groove
11/03/2010CN101877307A Method for obtaining alternative P-type and N-type semiconductor device structure and device structure thereof
11/03/2010CN101515586B Radio frequency SOI LDMOS device with close body contact
11/03/2010CN101501827B Device and method of manufacture for a low noise junction field effect transistor
11/03/2010CN101459084B Plane double diffusion metal oxide semiconductor device and preparation method
11/03/2010CN101452967B Schottky barrier diode device and manufacturing method thereof
11/03/2010CN101449383B Multi-post structures
11/03/2010CN101447485B Structure of single chip integrated GaAs-based PHEMT and PIN diode material
11/03/2010CN101414632B Fin type fet
11/03/2010CN101414629B Source field plate transistor with high electron mobility
11/03/2010CN101401195B Method for transferring semiconductor element, method for manufacturing semiconductor device, and semiconductor device
11/03/2010CN101383354B Flash memory and manufacturing method of the same
11/03/2010CN101369606B Thin-film transistor panel having structure that suppresses characteristic shifts and method for manufacturing the same
11/03/2010CN101351887B Fabrication of transistors
11/03/2010CN101346820B 半导体器件 Semiconductor devices
11/03/2010CN101346819B Semiconductor device with field plate and method
11/03/2010CN101320749B Semiconductor apparatus and method for fabricating the same
11/03/2010CN101273452B Semiconductor packages
11/03/2010CN101228619B TFT charge storage memory cell having high mobility corrugated channel and manufacturing method thereof
11/03/2010CN101223647B Silicon carbide junction barrier schottky diodes with suppressed minority carrier injection
11/03/2010CN101179079B Rail stack array of charge storage devices and method of making same
11/03/2010CN101162732B Metal oxide semiconductor field-effect transistor and preparation method thereof
11/03/2010CN101083279B Semiconductor device
11/03/2010CN101013727B Schottky diode structure with enhanced breakdown voltage and method of manufacture
11/02/2010US7826738 Semiconductor integrated circuit device, data recording device, and layout method for semiconductor integrated circuit device
11/02/2010US7826512 Semiconductor laser device including transparent electrode
11/02/2010US7826266 Semiconductor device having global and local data lines coupled to memory mats
11/02/2010US7826238 Power system inhibit method and device and structure therefor
11/02/2010US7826022 Active matrix type liquid crystal display and liquid crystal material
11/02/2010US7825586 Active matrix organic electroluminescent device and fabricating method thereof
11/02/2010US7825527 Return loss techniques in wirebond packages for high-speed data communications
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