Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2010
12/21/2010US7855381 Device including resin film
12/21/2010US7855380 Semiconductor device and method for fabricating the same
12/21/2010US7855379 Electron device using oxide semiconductor and method of manufacturing the same
12/21/2010US7855119 Method for forming polycrystalline thin film bipolar transistors
12/21/2010US7855114 High K stack for non-volatile memory
12/21/2010US7855106 Semiconductor device and method for forming the same
12/21/2010US7855091 composed of an alloy of cadmium sulfide (CdS) and zinc sulfide (ZnS) as semi-conductor materials, includes a dopant of manganese (Mn) added to the core and an outer shell of zinc sulfide (ZnS); tunable dopant based core/shell/shell quantum dots having a broad excitation spectrum
12/21/2010US7855033 photoresists with varying transmissive areas; halftones
12/16/2010WO2010144856A2 Techniques to enhance selectivity of electrical breakdown of carbon nanotubes
12/16/2010WO2010144375A2 3d channel architecture for semiconductor devices
12/16/2010WO2010144289A1 Finfet structures with stress-inducing source/drain-forming spacers and methods for fabricating same
12/16/2010WO2010143609A1 Method for producing electronic device, electronic device, semiconductor device, and transistor
12/16/2010WO2010143557A1 Semiconductor device
12/16/2010WO2010143376A1 Semiconductor device and process for manufacture thereof
12/16/2010WO2010143355A1 Wiring layer structure and process for manufacture thereof
12/16/2010WO2010143332A1 Semiconductor device and process for manufacture thereof
12/16/2010WO2010143306A1 Nonvolatile semiconductor storage device
12/16/2010WO2010143288A1 Semiconductor device
12/16/2010WO2010143283A1 Method for contact hole formation, method for manufacturing semiconductor device, and semiconductor device
12/16/2010WO2010143248A1 Tunnel magnetic resistance effect element and random access memory using same
12/16/2010WO2010142342A1 Power semiconductor device
12/16/2010WO2010142219A1 Trenched power mosfet and manufacturing method thereof
12/16/2010WO2010142218A1 Trench type mosfet with trench type contacting holes and method for producing the same
12/16/2010US20100317162 Method for producing an integrated field-effect transistor
12/16/2010US20100317156 Method for manufacturing integrated circuit
12/16/2010US20100317136 Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type iii-v group compound semiconductor layer, method for growing semiconductor layer, and method for growing layer
12/16/2010US20100316083 Sub-wavelength grating integrated vcsel
12/16/2010US20100315884 Non-volatile memory utilizing impact ionization and tunnelling and method of manufacturing thereof
12/16/2010US20100315871 Dynamic data restore in thyristor-based memory device
12/16/2010US20100315869 Spin torque transfer MRAM design with low switching current
12/16/2010US20100315864 Magnetoresistive element and magnetic memory
12/16/2010US20100315863 Magnetic Tunnel Junction Device and Fabrication
12/16/2010US20100315159 High voltage power integrated circuit
12/16/2010US20100315153 Apparatus and associated methods in relation to carbon nanotube networks
12/16/2010US20100315123 Non-majority mqca magnetic logic gates and arrays based on misaligned magnetic islands
12/16/2010US20100315115 Method of characterizing a semiconductor device and semiconductor device
12/16/2010US20100314723 Manufacturing of optical structures by electrothermal focussing
12/16/2010US20100314722 Soi wafer, semiconductor device, and method for manufacturing soi wafer
12/16/2010US20100314717 Semiconductor substrate, semiconductor device, and manufacturing methods thereof
12/16/2010US20100314712 Semiconductor device
12/16/2010US20100314708 Junction barrier schottky diode
12/16/2010US20100314707 Reduced Process Sensitivity of Electrode-Semiconductor Rectifiers
12/16/2010US20100314702 Spin transport device
12/16/2010US20100314701 Pressure sensor and manufacturing method thereof
12/16/2010US20100314700 Fabricating method for micro gas sensor and the same
12/16/2010US20100314699 Electrochemical sensor device, method of manufacturing the same
12/16/2010US20100314698 Methods of manufacturing metal-silicide features
12/16/2010US20100314697 Semiconductor transistors having high-k gate dielectric layers and metal gate electrodes
12/16/2010US20100314696 Field-effect transistor and method of fabricating same
12/16/2010US20100314695 Self-aligned vertical group III-V transistor and method for fabricated same
12/16/2010US20100314694 Semiconductor device and manufacturing method thereof
12/16/2010US20100314691 Method for selective gate halo implantation in a semiconductor die and related structure
12/16/2010US20100314687 Metal gate transistor, integrated circuits, systems, and fabrication methods thereof
12/16/2010US20100314683 Semiconductor device
12/16/2010US20100314682 Configurations and methods for manufacturing devices with trench-oxide-nano-tube super-junctions
12/16/2010US20100314681 Power semiconductor devices integrated with clamp diodes sharing same gate metal pad
12/16/2010US20100314680 Memory array
12/16/2010US20100314679 Charge trapping nonvolatile memory devices with a high-k blocking insulation layer
12/16/2010US20100314678 Non-volatile memory device and method for fabricating the same
12/16/2010US20100314672 Semiconductor device, method for manufacturing same, and solid-state image sensing device
12/16/2010US20100314671 Semiconductor device and method of forming the same
12/16/2010US20100314670 Strained ldmos and demos
12/16/2010US20100314669 Capacitive mems switch and method of fabricating the same
12/16/2010US20100314666 Nitride semiconductor device
12/16/2010US20100314665 Hetero-junction bipolar transistor
12/16/2010US20100314664 Silicided base structure for high frequency transistors
12/16/2010US20100314663 Semiconductor device
12/16/2010US20100314662 Semiconductor structure and method of manufacturing a semiconductor structure
12/16/2010US20100314661 Semiconductor substrate, method of fabricating the same, semiconductor device, and method of fabricating the same
12/16/2010US20100314659 Nanotube Semiconductor Devices
12/16/2010US20100314640 Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices
12/16/2010US20100314634 Pixel structure and manufacturing method thereof and display panel
12/16/2010US20100314630 Light emitting diode systems
12/16/2010US20100314628 Process for transferring a layer of strained semiconductor material
12/16/2010US20100314627 DIAMOND GaN DEVICES AND ASSOCIATED METHODS
12/16/2010US20100314626 Silicon carbide semiconductor device and method of manufacturing the same
12/16/2010US20100314625 GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture
12/16/2010US20100314624 Nonvolatile semiconductor memory device
12/16/2010US20100314622 Pixel structure and method of making the same
12/16/2010US20100314621 Method of manufacturing electronic apparatus and electronic apparatus
12/16/2010US20100314618 Thin film transistor, method of producing the same, eletctrooptic apparatus, and sensor
12/16/2010US20100314617 Vanadium dioxide nanowire, fabrication process thereof, and nanowire device using vanadium dioxide nanowire
12/16/2010US20100314610 Hemt with improved quantum confinement of electrons
12/16/2010US20100314609 Nanowire memory
12/16/2010US20100314604 Gate-all-around type semiconductor device and method of manufacturing the same
12/16/2010US20100314603 Electronic and optoelectronic devices with quantum dot films
12/16/2010DE102010023031A1 Mit Seltenerden verbesserter Transistor mit hoher Elektronenbeweglichkeit und Verfahren zu seiner Herstellung With rare earths improved transistor having high electron mobility and process for its preparation
12/16/2010DE102009033313A1 Reduzierte Prozessempfindlichkeit von Elektroden-Halbleiter-Gleichrichtern Reduced process sensitivity of electrode semiconductor rectifiers
12/16/2010DE102008051403B4 Thyristoranordnung mit einem Zündstufenthyristor, bei der die Stromanstiegsgeschwindigkeit begrenzt ist und Verfahren zum Betrieb der Thyristoranordnung Thyristor arrangement having a Zündstufenthyristor, wherein the rate of current rise is limited, and method of operating the thyristor
12/16/2010DE102006009226B4 Verfahren zum Herstellen eines Transistors mit einer erhöhten Schwellwertstabilität ohne Durchlass-Strombeeinträchtigung und Transistor A method for manufacturing a transistor with an increased Schwellwertstabilität without forward current impairment and transistor
12/16/2010DE102004060363B4 Halbleitersubstrat mit pn-Übergang und Verfahren zur Herstellung Semiconductor substrate having pn junction and methods for preparing
12/15/2010EP2262008A2 Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element
12/15/2010EP2262007A2 Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element
12/15/2010EP2261992A2 Semiconductor component with a drift region and with a drift control region
12/15/2010EP2261991A2 Method of fabricating a high-voltage field-effect transistor
12/15/2010EP2261990A2 High withstand voltage semiconductor device and manufacturing method thereof
12/15/2010EP2261989A2 High voltage switching devices and process for forming same
12/15/2010EP2261988A2 High voltage switching devices and process for forming same
12/15/2010EP2261987A2 Guard ring termination for silicon carbide devices
12/15/2010EP2261961A2 Method of making a vertical MOS transistor device
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