Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2010
12/22/2010CN201681942U Longitudinal trench SOI LDMOS unit
12/22/2010CN201681941U N-channel medium-pressure large-current VDMOS device structure
12/22/2010CN201681940U Audion and lead frame thereof
12/22/2010CN1993813B Semiconductor device manufacturing method and plasma oxidation treatment method
12/22/2010CN1976869B Structure for holding fine structure, semiconductor device, TFT driving circuit, panel, display, sensor and their manufacturing methods
12/22/2010CN1957474B III-nitride current control device and method of manufacture
12/22/2010CN1917155B Thin film transistor substrate and fabrication thereof
12/22/2010CN1906332B Nano-array electrode manufacturing method and photoelectric converter using same
12/22/2010CN1894803B Semiconductor apparatus and method for manufacturing the same
12/22/2010CN1819259B Package for gallium nitride semiconductor devices
12/22/2010CN101926008A Field-effect transistor using amorphous oxide
12/22/2010CN101926007A Semiconductor element and method for manufacturing the same
12/22/2010CN101925988A Semiconductor device and method for manufacturing the same
12/22/2010CN101925987A Method for forming strained channel PMOS devices and integrated circuits therefrom
12/22/2010CN101925986A Semiconductor device and method for production thereof
12/22/2010CN101924560A Polycrystalline silicon made fine electric resistance adjustor
12/22/2010CN101924142A GaAs Schottky variable capacitance diode and manufacture method thereof
12/22/2010CN101924141A High-power diode suitable for DO-27 and A-201AD package structures
12/22/2010CN101924140A Thin film transistor and flat panel display including the same
12/22/2010CN101924139A Strain channel field-effect transistor and preparation method thereof
12/22/2010CN101924138A MOS (Metal Oxide Semiconductor) device structure for preventing floating-body effect and self-heating effect and preparation method thereof
12/22/2010CN101924137A Nano-tubes semiconductor device and preparation method thereof
12/22/2010CN101924136A Semiconductor device
12/22/2010CN101924135A Semiconductor device, method for manufacturing same, and solid-state image sensing device
12/22/2010CN101924134A Semiconductor device and manufacturing method thereof
12/22/2010CN101924133A Fin FETs and methods for forming the same
12/22/2010CN101924132A Semiconductor device for power
12/22/2010CN101924131A Transverse-diffusion MOS (Metal Oxide Semiconductor) device and manufacturing method thereof
12/22/2010CN101924130A Grooved MOSFET with grooved contact hole and preparation method thereof
12/22/2010CN101924129A Field effect transistor
12/22/2010CN101924128A Field-effect transistor
12/22/2010CN101924127A Reduced process sensitivity of electrode-semiconductor rectifiers
12/22/2010CN101924118A Controlling the circuitry and memory array relative height in a phase change memory feol process flow
12/22/2010CN101924111A Semiconductor device and method of manufacturing the same
12/22/2010CN101924110A SOI (Silicon On Insulator) transistor structure of body contact and preparation method thereof
12/22/2010CN101924109A Structure and method for improving data storage capability of silicon oxide nitride oxide semiconductor (SONOS) flash memory
12/22/2010CN101924107A Stress enhanced CMOS (Complementary Metal-Oxide-Semiconductor) transistor structure
12/22/2010CN101924106A Integrated circuit structure
12/22/2010CN101924105A 集成电路结构 Integrated circuit structure
12/22/2010CN101924104A Metal-oxide semiconductor structure and manufacturing method thereof
12/22/2010CN101924103A Groove type power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and manufacturing method thereof
12/22/2010CN101924036A Flat-bottom junction power field effect transistor and manufacturing method thereof
12/22/2010CN101924027A Metal gate transistor, integrated circuits, systems, and fabrication methods thereof
12/22/2010CN101923065A Field effect transistor chiral sensor and manufacture method thereof
12/22/2010CN101922045A GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture
12/22/2010CN101517715B Method for manufacturing semiconductor epitaxial crystal substrate
12/22/2010CN101494172B Semiconductor device and method for manufacturing the same
12/22/2010CN101465382B Mesa semiconductor device and method of manufacturing the same
12/22/2010CN101447510B Semiconductor device and forming method thereof
12/22/2010CN101431102B Semiconductor device with high-breakdown-voltage transistor
12/22/2010CN101425539B High-mobility trench mosfets
12/22/2010CN101425534B Transistor and method of fabricating the same
12/22/2010CN101393935B Thin film transistor, liquid crystal display apparatus
12/22/2010CN101385130B Semiconductor device and manufacturing method thereof
12/22/2010CN101378073B Insulated gate bipolar transistor and method for manufacturing the same
12/22/2010CN101375380B Tunneling transistor with barrier
12/22/2010CN101364545B Germanium-silicon and polycrystalline silicon grating construction of strain silicon transistor
12/22/2010CN101361194B Apparatus and method for a fast recovery rectifier structure
12/22/2010CN101315508B Flat display device with test structure
12/22/2010CN101207164B Highly sensitive photo-sensing element and photo-sensing device using the same
12/22/2010CN101196668B Display device and method of producing the same
12/21/2010USRE42004 Method for fabricating a semiconductor storage device having an increased dielectric film area
12/21/2010US7855920 Semiconductor memory device having a floating storage bulk region capable of holding/emitting excessive majority carriers
12/21/2010US7855919 Non-volatile memory and semiconductor device
12/21/2010US7855758 Liquid crystal display device
12/21/2010US7855702 Scaling-friendly architecture for LED (backlight) drivers to minimize PCB trace lines
12/21/2010US7855464 Semiconductor device having a semiconductor chip and resin sealing portion
12/21/2010US7855462 Packaged semiconductor assemblies and methods for manufacturing such assemblies
12/21/2010US7855458 Electronic component
12/21/2010US7855454 Semiconductor device structures including nickel plated aluminum, copper, and tungsten structures
12/21/2010US7855452 Semiconductor module, method of manufacturing semiconductor module, and mobile device
12/21/2010US7855438 Deep via construction for a semiconductor device
12/21/2010US7855437 Semiconductor device and semiconductor package having the same
12/21/2010US7855434 Semiconductor device capable of decreasing variations in size of metal resistance element
12/21/2010US7855433 Semiconductor device
12/21/2010US7855432 Integrated thermal characterization and trim of polysilicon resistive elements
12/21/2010US7855429 Electronic circuit device having silicon substrate
12/21/2010US7855427 Semiconductor device with a plurality of isolated conductive films
12/21/2010US7855422 Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process
12/21/2010US7855421 Embedded phase-change memory and method of fabricating the same
12/21/2010US7855417 Non-volatile memory with a stable threshold voltage on SOI substrate
12/21/2010US7855416 Semiconductor device and manufacturing method thereof
12/21/2010US7855415 Power semiconductor devices having termination structures and methods of manufacture
12/21/2010US7855414 Semiconductor device with increased breakdown voltage
12/21/2010US7855413 Diode with low resistance and high breakdown voltage
12/21/2010US7855412 Silicon carbide semiconductor device and method of manufacturing the same
12/21/2010US7855411 Memory cell
12/21/2010US7855410 Semiconductor memory devices having a floating gate with a projecting portion and methods of forming semiconductor memory devices having a floating gate with a projecting portion
12/21/2010US7855409 Flash memory device and method of fabricating the same
12/21/2010US7855408 Semiconductor device having fine contacts
12/21/2010US7855405 Thin film transistor and display panel having the same
12/21/2010US7855404 Bipolar complementary semiconductor device
12/21/2010US7855403 Hybrid carbon nanotube FET (CNFET)-FET static RAM (SRAM) and method of making same
12/21/2010US7855402 Compound semiconductor device and method for fabricating the same
12/21/2010US7855401 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
12/21/2010US7855399 Protection device of programmable semiconductor surge suppressor having deep-well structure
12/21/2010US7855387 Light-emitting device and electronic apparatus
12/21/2010US7855384 SIC semiconductor device and method for manufacturing the same
12/21/2010US7855383 Semiconductor device and its manufacturing method
12/21/2010US7855382 Pixel structure
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