Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2012
06/14/2012US20120146000 Omega Shaped Nanowire Field Effect Transistors
06/14/2012US20120145999 Semiconductor devices and methods of manufacturing the same
06/14/2012US20120145998 Local Bottom Gates for Graphene and Carbon Nanotube Devices
06/14/2012US20120145997 Production of vertical arrays of small diameter single-walled carbon nanotubes
06/14/2012US20120145996 Barrier infrared detector
06/14/2012US20120145995 Nitride-based semiconductor device and method for manufacturing the same
06/14/2012US20120145990 Nanowire growth on dissimilar material
06/14/2012US20120145989 Laser-induced structuring of substrate surfaces
06/14/2012US20120145988 Nanoscale Apparatus and Sensor With Nanoshell and Method of Making Same
06/14/2012US20120145984 Punch-through diode
06/14/2012DE112010003143T5 Halbleitervorrichtung, Verfahren zum Herstellen einer Halbleitervorrichtung, und Anzeigevorrichtung A semiconductor device, method for manufacturing a semiconductor device, and display device
06/14/2012DE112010000882T5 Siliziumkarbid-Halbleitervorrichtung Silicon carbide semiconductor device
06/14/2012DE112009003514T5 Grabenbasierte leistungshalbleitervorrichtungen mit eigenschaften einer erhöhten durchbruchspannung Grave-based power semiconductor devices with properties increased by breakdown voltage
06/14/2012DE112009003199T5 Lateraler MOSFET mit einer Substrat-Drainverbindung A lateral MOSFET with a substrate-drain connection
06/14/2012DE102011088010A1 Metallgatestruktur mit großem ε Metal gate structure with large ε
06/14/2012DE102011056157A1 Verfahren zur Herstellung eines Halbleiterbauteils mit isolierten Halbleitermesas A process for producing a semiconductor device with isolated Halbleitermesas
06/14/2012DE102011054182A1 Non-volatile memory device for e.g. memory card for storing data, has oxidization-resistant distance holder covering side walls of metal gate and positioned between control gate mask pattern and base gate
06/14/2012DE102010062677A1 Generatorvorrichtung zur Spannungsversorgung eines Kraftfahrzeugs Generator means for supplying voltage to a motor vehicle
06/14/2012DE102010062582A1 Elektronikbauteil Electronic component
06/14/2012DE102009055394B4 Verfahren und Halbleiterbauelement mit Erhöhung der Abscheidegleichmäßigkeit für eine Kanalhalbleiterlegierung durch Bilden einer Vertiefung vor der Wannenimplantation The method and semiconductor device having a channel for increasing the Abscheidegleichmäßigkeit semiconductor alloy by forming a depression in front of the well implantation
06/14/2012DE102009055393B4 Verfahren zur Herstellung und Halbleiterbauelement mit besserem Einschluss von empfindlichen Materialien einer Metallgateelektrodenstruktur mit großem ε A process for producing semiconductor device and with better encapsulation of sensitive materials, a metal gate electrode structure with large ε
06/14/2012DE102004055879B4 Halbleiterbauteil mit isolierter Steuerelektrode A semiconductor device comprising insulated gate
06/14/2012DE102004018153B4 Hochvolt-Sperrschicht-Feldeffekttransistor mit retrograder Gatewanne und Verfahren zu dessen Herstellung High voltage JFET with retrograde gate well and method for its manufacture
06/14/2012CA2820256A1 Active matrix dilute source enabled vertical organic light emitting transistor
06/14/2012CA2792550A1 Method for manufacturing semiconductor device
06/13/2012EP2463922A2 Nitride semiconductor device
06/13/2012EP2463913A1 Bipolar reverse-blocking non-punch-through power semiconductor device
06/13/2012EP2463912A2 Semiconductor device
06/13/2012EP2463901A2 Semiconductor device package and method of manufacturing thereof
06/13/2012EP2463897A1 Integrating n-type and p-type metal gate transistors field
06/13/2012EP2463894A1 Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
06/13/2012EP2462688A2 Rectifier arrangement
06/13/2012EP2462621A1 Semiconductor arrangement comprising a schottky diode
06/13/2012EP2462620A1 Semiconductor arrangement and method for producing it
06/13/2012EP2462619A1 Schottky diode with substrate pn diode
06/13/2012EP2462618A1 Field effect transistor with integrated tjbs diode
06/13/2012EP1875494B1 Method of fabricating a heterojunction bipolar transistor
06/13/2012EP1869707B1 Technique for the growth of planar semi-polar gallium nitride
06/13/2012EP1792346B1 High-mobility bulk silicon pfet fabrication method
06/13/2012EP1697983B1 Highly efficient gallium nitride based light emitting diodes having surface roughening
06/13/2012EP1692724B1 Semiconductor memory device with increased node capacitance
06/13/2012EP1181722B1 Low noise and high yield data line structure for imager
06/13/2012EP1116278B1 Bipolar transistor and method for producing same
06/13/2012CN202275837U 带铜粒子结构的压装式车用二极管 Copper particle structure with pressure-mounted vehicle diode
06/13/2012CN202275836U Ldmos及集成ldmos器件 Ldmos devices and integrated ldmos
06/13/2012CN1956222B Semiconductor device and method for fabricating the same
06/13/2012CN1906767B Semiconductor device and method for manufacturing same
06/13/2012CN1812123B Resonant tunneling device using metal oxide semiconductor processing
06/13/2012CN102498570A Light-emitting device and method for manufacturing the same
06/13/2012CN102498569A Dual dielectric tri-gate field effect transistor
06/13/2012CN102498561A Method for manufacturing semiconductor device
06/13/2012CN102498553A Transistor and display device
06/13/2012CN102498547A Epitaxial substrate for electronic device using transverse direction as direction of current conduction and manufacturing method therefor
06/13/2012CN102498542A Semiconductor substrate, field effect transistor, integrated circuit, and method for producing semiconductor substrate
06/13/2012CN102496631A ZnO-based full transparent non-volatile memory with back electrode structure and preparation method thereof
06/13/2012CN102496630A ZnO-based completely transparent non-volatile memory in top electrode structure and preparation method
06/13/2012CN102496629A Floating-gate-type flash memory taking electric inductive variable shallow junction as source/drain area
06/13/2012CN102496628A Display device
06/13/2012CN102496627A LDMOS structure in ultrahigh voltage BCD technology
06/13/2012CN102496626A Silicon germanium heterojunction bipolar transistor structure
06/13/2012CN102496625A Thin film transistor, pixel structure and manufacturing method
06/13/2012CN102496624A Integrated floating basin isolation structure in high voltage BCD technology
06/13/2012CN102496621A Semiconductor assembly and electroluminescent component and method for manufacturing same
06/13/2012CN102496618A Pixel structure and manufacturing method thereof
06/13/2012CN102496577A Method for manufacturing amorphous oxide film
06/13/2012CN102496575A 60V unsymmetrical high-pressure PMOS (P-channel Metal Oxide Semiconductor) structure and manufacturing method of same
06/13/2012CN102496572A Fast recovery epitaxial diode and preparation method thereof
06/13/2012CN102496571A Method and structure for manufacturing low barrier Schottky diode
06/13/2012CN101969073B Rapid superjunction longitudinal double-diffusion metal oxide semiconductor transistor
06/13/2012CN101958320B Semiconductor device
06/13/2012CN101916729B Method for producing SOI (Silicon on Insulator) LDMOS (Laterally Diffused Metal Oxide Semiconductor) device provided with multi-layer super-junction structure
06/13/2012CN101908548B Disposal programmable memorizer, manufacturing method thereof and programming reading method thereof
06/13/2012CN101908546B Disposable programmable memory as well as manufacturing and programming read method
06/13/2012CN101878533B Electronic device with controlled electrical field
06/13/2012CN101853878B Combined PNP-trench isolation RC-GCT component and preparation method thereof
06/13/2012CN101853853B Tvs with low capacitance & forward voltage drop with depleted scr as steering diode
06/13/2012CN101826549B Semiconductor heterostructure, preparation method thereof and semiconductor device
06/13/2012CN101771084B Layout structure of transverse power components
06/13/2012CN101743629B Semiconductor device provided with thin film transistor and method for manufacturing the semiconductor device
06/13/2012CN101707207B Silicon controlled device adopting glass passivation protection between gate pole and negative pole and manufacturing method thereof
06/13/2012CN101689485B Laminated film manufacturing method, semiconductor device manufacturing method, semiconductor device and display device
06/13/2012CN101636843B Single voltage supply pseudqmorphic high electron mobility transistor (phemt) power device and process for manufacturing the same
06/13/2012CN101622715B Semiconductor device and its manufacturing method
06/13/2012CN101604696B Semiconductor device, and manufacturing method thereof
06/13/2012CN101479852B Capacitorless one-transistor floating-body dram cell and method of forming the same
06/13/2012CN101465371B Semiconductor device and method of manufacturing the same
06/13/2012CN101335295B Lateral bipolar transistor and method of production
06/13/2012CN101253609B Transistor and method of manufacturing same, and semiconductor device having the same
06/13/2012CN101174652B Self-aligned method and a memory array made thereby
06/13/2012CN101064346B Semiconductor device and manufacturing method of the same
06/12/2012US8199578 Single polysilicon layer non-volatile memory and operating method thereof
06/12/2012US8199269 Method for manufacturing thin film transistors
06/12/2012US8198737 Method of forming wire bonds in semiconductor devices
06/12/2012US8198736 Reduced susceptibility to electrostatic discharge during 3D semiconductor device bonding and assembly
06/12/2012US8198735 Integrated circuit package with molded cavity
06/12/2012US8198734 Silicon-on-insulator structures for through via in silicon carriers
06/12/2012US8198733 Semiconductor device with deviation compensation and method for fabricating the same
06/12/2012US8198731 Protective layer for bond pads
06/12/2012US8198728 Semiconductor device and plural semiconductor elements with suppressed bending
06/12/2012US8198724 Integrated circuit device having a multi-layer substrate and a method of enabling signals to be routed in a multi-layer substrate
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