Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2012
08/09/2012US20120199842 Semiconductor memory device and method for manufacturing the same
08/09/2012US20120199841 Gallium and Nitrogen Containing Trilateral Configuration for Optical Devices
08/09/2012US20120199840 Semiconductor device having a pixel matrix circuit that includes a pixel tft and a storage capacitor
08/09/2012US20120199838 Thin film transistor array panel and manufacturing method thereof
08/09/2012US20120199832 Process for producing doped silicon layers, silicon layers obtainable by the process and use thereof
08/09/2012US20120199831 Liquid crystal display device
08/09/2012US20120199828 Stable p-type semiconducting behaviour in li and ni codoped zno
08/09/2012US20120199827 Thin-film transistor circuit substrate and method of manufacturing the same
08/09/2012US20120199815 Semiconductor device and method of manufacturing the same
08/09/2012US20120199812 Strain tunable silicon and germanium nanowire optoelectronic devices
08/09/2012US20120199810 Growth substrate and light emitting device
08/09/2012US20120199808 High voltage-resistant lateral double-diffused transistor based on nanowire device
08/09/2012US20120199807 Semiconductor structure and semiconductor device including a diode structure and methods of forming same
08/09/2012US20120199187 Nanowire tunnel diode and method for making the same
08/09/2012DE112010002352T5 FinFET-Strukturen mit verspannungsinduzierenden Source/Drain-biIdenden Abstandshaltern und Verfahren zur Herstellung der FinFET-Strukturen FinFET structures with stress-inducing source / drain biIdenden spacers and method of manufacturing the FinFET structures
08/09/2012DE10351761B4 Sensor für eine dynamische Grösse Sensor for dynamic size
08/09/2012DE102012201789A1 Nicht-flüchtige CMOS-kompatible Logikschaltungen und zugehörige Betriebsverfahren Non-volatile CMOS compatible logic circuits and associated operational procedures
08/09/2012DE102012100869A1 Zusammendrückende polykristalline Siliziumschicht und Herstellungsverfahren dafür Compressing polycrystalline silicon layer and manufacturing method thereof
08/09/2012DE102012100767A1 Drain-erweiterte Feldeffekttransistoren und Verfahren zu deren Herstellung Drain-extended field effect transistors and methods for their preparation
08/09/2012DE102011078331A1 Method for producing ohmic contacts on silicon carbide substrate of semiconductor device of e.g. power electronics device, involves producing oxide layer on surface of substrate, and applying contact metallization layer on contact region
08/09/2012DE102011010362A1 Semiconductor device has planar conductor that is formed on insulation layer in opposite side of substrate, where lateral edge of conductor is contacted and covered with metal film
08/09/2012DE10137369B4 Halbleitersubstrat, Feldeffekt-Transistor, Verfahren zur Bildung einer SiGe-Schicht und Verfahren zur Bildung einer gespannten Si-Schicht unter Verwendung derselben, und Verfahren zur Herstellung eines Feldeffekt-Transistors Semiconductor substrate, the field effect transistor, method of forming a SiGe layer and method for forming a strained Si layer using the same, and method for producing a field effect transistor
08/08/2012EP2485262A1 High Voltage GAN Transistors
08/08/2012EP2485250A1 Semiconductor device, and process for production of semiconductor device
08/08/2012EP2484190A1 Cold plate with pins
08/08/2012EP2483929A2 Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same
08/08/2012EP2483928A2 Trigger stage thyristor having decoupled trigger stage
08/08/2012EP2165364B1 Vertical current controlled silicon on insulator (soi) device and method of forming same
08/08/2012EP1405349B1 Algan/gan hemts having a gate contact on a gan based cap segment and methods of fabricating the same
08/08/2012EP1222695B1 Integrated circuit with at least one capacitor and method for producing the same
08/08/2012CN202373590U Schottky barrier diode rectification device
08/08/2012CN202373589U Diode capable of preventing stress from acting on chip
08/08/2012CN202373588U Totally-transparent oxide thin film transistor
08/08/2012CN202373587U Transistor, array substrate and liquid crystal display
08/08/2012CN202373586U Groove MOS (Metal Oxide Semiconductor) device with high-unit-cell density
08/08/2012CN202373585U Transverse power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device structure adopting reduced surface field (RESURFE) technology
08/08/2012CN202373580U Thin film transistor array substrate and liquid crystal display
08/08/2012CN202373578U Ultrathin paster diode
08/08/2012CN202372735U Array substrate and liquid crystal display
08/08/2012CN1998085B Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions
08/08/2012CN1870301B Gallium nitride semiconductor device
08/08/2012CN1790748B Semiconductor device and method for manufacturing the same
08/08/2012CN102630344A Semiconductor device and production method thereof
08/08/2012CN102630336A Method of manufacturing crystalline semiconductor film
08/08/2012CN102629664A Array substrate and manufacturing method thereof, and display apparatus
08/08/2012CN102629628A TFT array substrate and manufacturing method thereof and liquid crystal display
08/08/2012CN102629627A Heterogeneous gate tunneling transistor and forming method thereof
08/08/2012CN102629626A Semiconductor device
08/08/2012CN102629625A 碳化硅半导体器件 Silicon carbide semiconductor device
08/08/2012CN102629624A Metal-insulator-semiconductor (MIS) grid enhanced high electron mobility transistor (HEMT) device based on gallium nitride (GaN) and manufacture method of MIS grid enhanced HEMT device
08/08/2012CN102629623A Wide ditch terminal structure used for semiconductor element
08/08/2012CN102629608A Array substrate, a manufacturing method thereof and display device
08/08/2012CN102629605A TFT-LCD array substrate and methods for manufacturing and restoring the same
08/08/2012CN102629589A Array substrate and manufacturing method thereof, and display apparatus
08/08/2012CN102629585A Display device, thin film transistor, array substrate and manufacturing method thereof
08/08/2012CN102629581A TFT array substrate, liquid crystal display panel method for manufacturing the array substrate
08/08/2012CN102629579A Flexible TFT array substrate and manufacturing method thereof and display device
08/08/2012CN102629578A TFT array substrate and manufacturing method thereof and display device
08/08/2012CN102629577A TFT array substrate and manufacturing method thereof and display device
08/08/2012CN102629576A Array substrate and method for manufacturing the same
08/08/2012CN102629575A Array substrate and method for manufacturing the same
08/08/2012CN102629555A Gate insulation layer and preparation method thereof, TFT and preparation method thereof, array substrate and display device
08/08/2012CN102110718B Oxide semiconductor film for thin film transistor and preparation method thereof
08/08/2012CN102084258B Capacitance detection type movable sensor
08/08/2012CN102034854B Adamas wafer and production method thereof
08/08/2012CN101969060B Active element array substrate, display panel and repairing method
08/08/2012CN101931007B Semiconductor device
08/08/2012CN101896999B Semiconductor substrate, method for producing semiconductor substrate, and electronic device
08/08/2012CN101834205B Semiconductor device and manufacturing method thereof
08/08/2012CN101819991B 半导体器件 Semiconductor devices
08/08/2012CN101814497B Semiconductor device
08/08/2012CN101809742B Switching device for electric circuit
08/08/2012CN101740641B Semiconductor device
08/08/2012CN101728259B Method for cutting semi-conducting material composite rod into a plurality of wafers
08/08/2012CN101706831B Circuit tolerance measure method in field of semiconductor design simulation
08/08/2012CN101689566B Semiconductor device, semiconductor device manufacturing method and image display device
08/08/2012CN101675506B Layers composite comprising a pyrogenic zinc oxide layer and field-effect transistor comprising this composite
08/08/2012CN101673771B Capacitative element
08/08/2012CN101667582B Flash memory provided with floating gates with SONOS structure
08/08/2012CN101641788B Capacitor-less floating-body volatile memory cell comprising a pass transistor and a vertical read/write enable transistor and manufacturing and programming methods thereof
08/08/2012CN101640218B Metallic oxide semiconductor field effect transistor and manufacturing method thereof
08/08/2012CN101640205B Flash memory
08/08/2012CN101562182B Integrated hemt and a combination, method as well as a system of a horizontal field effect rectifier
08/08/2012CN101490849B Transistor and semiconductor device
08/08/2012CN101490847B Semiconductor power device
08/08/2012CN101484986B Compound semiconductor epitaxial substrate and method for producing the same
08/08/2012CN101447512B Mos devices having elevated source/drain regions
08/08/2012CN101388663B Level shift circuit
08/08/2012CN101346306B Controlled preparation of nanoparticle materials
08/08/2012CN101226960B Access device having vertical channel and related semiconductor device and a method of fabricating the access device
08/08/2012CN101188190B SOQ substrate and method of manufacturing SOQ substrate
08/07/2012US8238360 Header replication in accelerated TCP (transport control protocol) stack processing
08/07/2012US8237904 Display panel with driving circuit and common electrode within sealant
08/07/2012US8237457 Replacement-gate-compatible programmable electrical antifuse
08/07/2012US8237294 Dicing tape-integrated wafer back surface protective film
08/07/2012US8237287 Semiconductor device
08/07/2012US8237285 Semiconductor device, through hole having expansion portion and thin insulating film
08/07/2012US8237282 Semiconductor device
08/07/2012US8237275 Tungsten stiffener for flexible substrate assembly
08/07/2012US8237274 Integrated circuit package with redundant micro-bumps
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