Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2012
08/15/2012CN102640280A Semiconductor device and process for production thereof
08/15/2012CN102640279A Semiconductor device
08/15/2012CN102640272A Semiconductor device and manufacturing method thereof
08/15/2012CN102640271A Gate-all-around nanowire field effect transistors
08/15/2012CN102640270A Omega shaped nanowire field effect transistors
08/15/2012CN102640268A Method for producing semiconductor element substrate
08/15/2012CN102639258A Control apparatus for capacitive electromechanical transducer, and method of controlling the capacitive electromechanical transducer
08/15/2012CN102637747A Double-copper-electrode rectifying tube chip made of coated environment-friendly material, and coating process
08/15/2012CN102637746A High-k grid dielectric field effect transparent thin film transistor and manufacturing method of the same
08/15/2012CN102637745A Thin-film transistor, display apparatus and electronic apparatus
08/15/2012CN102637744A Signal operation instruction (SOI) transverse super junction power metal oxide semiconductor field effect transistor (MOSFET) device
08/15/2012CN102637743A Power device and manufacturing method thereof
08/15/2012CN102637742A Oxide semiconductor thin-film transistor and preparation method thereof
08/15/2012CN102637741A Resonant tunneling device using metal oxide semiconductor processing
08/15/2012CN102637740A Semiconductor device and method for manufacturing same
08/15/2012CN102637739A Semiconductor device having insulating film with increased tensile stress and manufacturing method thereof
08/15/2012CN102637738A High-voltage multiple-grid element and manufacturing method thereof
08/15/2012CN102637737A Groove-type field-effect tube and preparation method thereof
08/15/2012CN102637736A High-voltage LDMOS (high-voltage-lateral diffused metal oxide semiconductor) component
08/15/2012CN102637735A Compound semiconductor device and method for manufacturing the same
08/15/2012CN102637734A Compound semiconductor device and manufacturing method of the same
08/15/2012CN102637733A Super junction insulated-gate bipolar transistor
08/15/2012CN102637732A Insulated gate bipolar transistor (IGBT)
08/15/2012CN102637731A Terminal structure of channel power metal oxide semiconductor (MOS) device and manufacture method of terminal structure
08/15/2012CN102637730A Heterojunction 1T-DRAM (dynamic random access memory) structure on basis of buried-layer N-type trap and forming method of 1T-DRAM structure
08/15/2012CN102637729A Semiconductor device with surrounding gate
08/15/2012CN102637728A Method of manufacturing strained source/drain structures
08/15/2012CN102637727A Diode for improving recovery softness characteristic and manufacture method of diode
08/15/2012CN102637726A MS (Metal-Semiconductor)-grid GaN-based enhanced transistor with high electron mobility and manufacture method thereof
08/15/2012CN102637725A Device accomplished by adopting Bipolar low-pressure process and manufacturing method thereof
08/15/2012CN102637724A Insulated gate bipolar transistor (IGBT)
08/15/2012CN102637723A GaN (gallium nitride) substrate, semiconductor device and manufacturing method of GaN substrate
08/15/2012CN102637722A Semiconductor device and relative manufacturing method thereof
08/15/2012CN102637721A Compound semiconductor device, method for manufacturing the device and electric device
08/15/2012CN102637720A Isolation structure profile for gap filling
08/15/2012CN102637719A Semiconductor structure and preparation method of semiconductor structure
08/15/2012CN102637687A Heterojunction 1T-DRAM (dynamic random access memory) structure on basis of buried-layer N-type trap and manufacturing method of 1T-DRAM structure
08/15/2012CN102637685A Metal gate structure of a cmos semiconductor device
08/15/2012CN102637650A Semiconductor device and method for producing the same, and power supply
08/15/2012CN102637635A Display device, liquid crystal display panel, array substrate and manufacturing method of array substrate
08/15/2012CN102637595A Trench schottky diode and manufacturing method thereof
08/15/2012CN102637576A Semiconductor structure and preparation method thereof
08/15/2012CN101916778B High-voltage semiconductor device and manufacturing method thereof
08/15/2012CN101897030B Field effect transistor and display
08/15/2012CN101847663B Transient voltage suppressor (TVS) and method for forming same
08/15/2012CN101202302B Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
08/15/2012CN101026188B Single-charge tunnelling device
08/14/2012US8243964 Piezo speaker pressure sensor
08/14/2012US8243769 Semiconductor light emitting device, optical pickup unit and information recording/reproduction apparatus
08/14/2012US8243524 Semiconductor storage device
08/14/2012US8243509 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
08/14/2012US8243506 Phase change memory structures and methods
08/14/2012US8243494 Self-aligned structure and method for confining a melting point in a resistor random access memory
08/14/2012US8243417 Variable capacitor and electronic device
08/14/2012US8243400 Tunneling magnetoresistive effect element and spin MOS field-effect transistor
08/14/2012US8242610 Semiconductor device and method of fabricating semiconductor device
08/14/2012US8242607 Integrated circuit package system with offset stacked die and method of manufacture thereof
08/14/2012US8242604 Coaxial through-silicon via
08/14/2012US8242603 Chip identification using top metal layer
08/14/2012US8242597 Crystal structure of a solder bump of flip chip semiconductor device
08/14/2012US8242593 Clustered stacked vias for reliable electronic substrates
08/14/2012US8242587 Electronic device and pressure sensor
08/14/2012US8242585 Semiconductor device and method for manufacturing the same
08/14/2012US8242584 Structure and method to create stress trench
08/14/2012US8242583 Semiconductor device having CMP dummy pattern
08/14/2012US8242581 Mixed-gate metal-oxide-semiconductor varactors
08/14/2012US8242580 Semiconductor device
08/14/2012US8242579 Capacitor structure
08/14/2012US8242575 Thin-film device including a terminal electrode connected to respective end faces of conductor layers
08/14/2012US8242574 Method for forming isolation layer of semiconductor device
08/14/2012US8242573 Semiconductor device with isolation formed between digital circuit and analog circuit
08/14/2012US8242569 Encapsulation, MEMS and method of selective encapsulation
08/14/2012US8242568 Semiconductor device and fabrication method thereof
08/14/2012US8242563 Semiconductor device
08/14/2012US8242561 Semiconductor devices with improved self-aligned contact areas
08/14/2012US8242558 Semiconductor device and method for production of semiconductor device
08/14/2012US8242557 Trench gate type transistor
08/14/2012US8242556 Vertical and trench type insulated gate MOS semiconductor device
08/14/2012US8242555 FIN field effect transistor
08/14/2012US8242554 Integrated two device non-volatile memory
08/14/2012US8242553 Thin film transistor substrate and thin film transistor used for the same
08/14/2012US8242542 Semiconductor switching device employing a quantum dot structure
08/14/2012US8242539 Field effect transistor with carrier transit layer in mesa having inclined sides
08/14/2012US8242537 IGBT with fast reverse recovery time rectifier and manufacturing method thereof
08/14/2012US8242536 Semiconductor device
08/14/2012US8242535 IGBT and method of producing the same
08/14/2012US8242534 Semiconductor device and manufacturing method thereof
08/14/2012US8242533 Lateral Schottky diode
08/14/2012US8242530 Light emitting device and method for fabricating the same
08/14/2012US8242522 Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm
08/14/2012US8242518 Solid state light sheet for general illumination having metal interconnector through layer for connecting dies in series
08/14/2012US8242512 Compound semiconductor device
08/14/2012US8242511 Field effect transistor using diamond and process for producing the same
08/14/2012US8242510 Monolithic integration of gallium nitride and silicon devices and circuits, structure and method
08/14/2012US8242508 Method of manufacturing a semiconductor device
08/14/2012US8242507 Pixel structure having capacitor compensation
08/14/2012US8242505 Display device
08/14/2012US8242504 Oxide semiconductor and thin film transistor including the same
08/14/2012US8242502 TFT array substrate having conductive layers containing molybdenum nitride and copper alloy
08/14/2012US8242501 Thin film transistor and electronic apparatus
1 ... 395 396 397 398 399 400 401 402 403 404 405 406 407 408 409 410 411 412 413 414 415 ... 2182