Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2012
08/16/2012US20120205759 Magnetic tunnel junction with spacer layer for spin torque switched mram
08/16/2012US20120205758 Magnetic element with improved out-of-plane anisotropy for spintronic applications
08/16/2012US20120205757 Pinning field in MR devices despite higher annealing temperature
08/16/2012US20120205756 Semiconductor device and method of testing the same
08/16/2012US20120205755 Mems microphone
08/16/2012US20120205754 Piezoelectric device and method for manufacturing piezoelectric device
08/16/2012US20120205753 Micro-electromechanical system devices and methods of making micro-electromechanical system devices
08/16/2012US20120205752 Strengthened Micro-Electromechanical System Devices and Methods of Making Thereof
08/16/2012US20120205751 Semiconductor device
08/16/2012US20120205747 Semiconductor substrate, field-effect transistor, integrated circuit, and method for fabricating semiconductor substrate
08/16/2012US20120205744 Body contact structure for a semiconductor device
08/16/2012US20120205743 Pd soi device with a body contact structure
08/16/2012US20120205739 Semiconductor device and process for production thereof
08/16/2012US20120205738 Near zero channel length field drift ldmos
08/16/2012US20120205737 Shielded gate trench mosfet device and fabrication
08/16/2012US20120205736 Memory Arrays and Methods of Forming Electrical Contacts
08/16/2012US20120205734 Very Dense NVM Bitcell
08/16/2012US20120205729 Field effect transistor with narrow bandgap source and drain regions and method of fabrication
08/16/2012US20120205728 Semiconductor Structure and Method for Manufacturing the Same
08/16/2012US20120205727 Semiconductor device including multiple metal semiconductor alloy region and a gate structure covered by a continuous encapsulating layer
08/16/2012US20120205726 Structure And Method For Fabrication Of Field Effect Transistor Gates With Or Without Field Plates
08/16/2012US20120205725 Method of Fabricating a Semiconductor Device with a Strain Inducing Material
08/16/2012US20120205723 Range sensor and range image sensor
08/16/2012US20120205720 Tantalum silicon oxynitride high-k dielectrics and metal gates
08/16/2012US20120205718 Compound semiconductor device and method for manufacturing the same
08/16/2012US20120205717 Compound semiconductor device, method for manufacturing the device and electric device
08/16/2012US20120205716 Epitaxially Grown Extension Regions for Scaled CMOS Devices
08/16/2012US20120205715 Method of manufacturing strained source/drain structures
08/16/2012US20120205714 Apparatus and method for protection of electronic circuits operating under high stress conditions
08/16/2012US20120205671 Semiconductor device and manufacturing method thereof
08/16/2012US20120205670 Semiconductor device and process for production thereof
08/16/2012US20120205669 Power semiconductor device
08/16/2012US20120205668 Switching semiconductor devices and fabrication process
08/16/2012US20120205667 Semiconductor Device with Low-Conducting Field-controlling Element
08/16/2012US20120205666 Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
08/16/2012US20120205665 High-quality non-polar/semi-polar semiconductor device on porous nitride semiconductor and manufacturing method thereof
08/16/2012US20120205663 Semiconductor device, power-supply unit, amplifier and method of manufacturing semiconductor device
08/16/2012US20120205662 Semiconductor device, power supply device, amplifier, and method of manufacturing semiconductor device
08/16/2012US20120205661 Semiconductor device and method for manufacturing the same
08/16/2012US20120205660 Method of manufacturing thin film transistor, thin film transistor, and display unit
08/16/2012US20120205659 Crystallization apparatus, crystallization method, and method of manufacturing organic light-emitting display apparatus
08/16/2012US20120205658 Semiconductor display device and method of manufacturing the same
08/16/2012US20120205657 Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method
08/16/2012US20120205656 Thin-Film Electronic Devices Including Pre-Deformed Compliant Substrate
08/16/2012US20120205654 Silicon layers formed from polymer-modified liquid silane formulations
08/16/2012US20120205653 Pressure sensor and method for manufacturing pressure sensor
08/16/2012US20120205651 Liquid crystal display and method of manufacturing the same
08/16/2012US20120205650 Methods for forming materials using micro-heaters and electronic devices including such materials
08/16/2012US20120205648 Thin-film transistor, display apparatus and electronic apparatus
08/16/2012US20120205627 Semiconductor switching circuit employing quantum dot structures
08/16/2012US20120205626 Semiconductor chip with graphene based devices in an interconnect structure of the chip
08/16/2012US20120205625 (Al, In, Ga, B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE
08/16/2012US20120205623 NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES
08/16/2012US20120205613 High Efficiency Broadband Semiconductor Nanowire Devices and Methods of Fabricating without Foreign Catalysis
08/16/2012US20120204957 METHOD FOR GROWING AlInGaN LAYER
08/16/2012US20120204941 Allotropic changes in si and use in fabricating materials for solar cells
08/16/2012DE112010001556T5 Rückdiffusionsunterdrückende Strukturen Back diffusion Oppressive structures
08/16/2012DE112005001296B4 Verfahren zum Herstellen einer Halbleitervorrichtung mit reduziertem Kontaktwiderstand A method of manufacturing a semiconductor device with reduced contact resistance
08/16/2012DE102012201924A1 Kristallisationsvorrichtung, Kristallisationsverfahren und Verfahren zur Herstellung einer organischen lichtemittierenden Anzeigevorrichtung Crystallizer, crystallizing method and method of fabricating an organic light emitting display device
08/16/2012DE102011087149A1 Halbleitervorrichtung und Verfahren, um sie zu testen A semiconductor device and method in order to test them
08/16/2012DE102011011378A1 Trägersubstrat und Verfahren zur Herstellung von Halbleiterchips Carrier substrate and process for producing semiconductor chips
08/16/2012DE102011011043A1 Halbleiterschicht oder Halbleiterschichtsystem mit einer semipolaren oder m-planaren Gruppe-III-Nitrid Schicht oder einem Schichtsystem und ein darauf basierendes Halbleiterbauelement Semi-conductor layer or semiconductor layer system with a semi-polar or m-planar group III-nitride layer or a layer system, and based thereon a semiconductor device
08/16/2012DE102011004080A1 Heterostruktur-Pufferschicht für Heterostruktur-Feldeffekttransistoren Heterostructure buffer layer heterostructure field-effect transistors
08/16/2012DE102011003961A1 Trench-Schottkydiode Trench Schottky
08/16/2012DE102008060704B4 Feldeffekttransistor-Bauteil sowie Verfahren zu seiner Herstellung mit einem zusammengesetzten Passivierungsprozess Field effect transistor device and method for its production with a composite passivation
08/16/2012DE102007058676B4 Verfahren zur Herstellung einer integrierten Schaltung A method of fabricating an integrated circuit
08/16/2012CA2864212A1 High efficiency broadband semiconductor nanowire devices and methods of fabricating without foreign metal catalysis
08/16/2012CA2791178A1 Silicon carbide semiconductor device and method for manufacturing same
08/15/2012EP2487720A1 Semiconductor device
08/15/2012EP2487709A1 Method for manufacturing a semiconductor device
08/15/2012EP2487708A1 Method for obtaining a network of nanometric terminals
08/15/2012EP2486596A1 Semiconductor device and method for manufacturing the same
08/15/2012EP2486595A1 Semiconductor device
08/15/2012EP2486594A1 Oxide semiconductor layer and semiconductor device
08/15/2012EP2486593A1 Semiconductor device and manufacturing method thereof
08/15/2012EP2486592A1 Improved trench termination structure
08/15/2012EP1834353B1 Method for producing semiconductor chips from a wafer
08/15/2012EP1608007B1 Method for forming insulating film in semiconductor device
08/15/2012CN202384346U 稳压二极管 Zener diode
08/15/2012CN202384345U 半导体装置 Semiconductor device
08/15/2012CN202384344U Forming structure for metal-oxide-semiconductor field effect transistor (MOSFET) power amplifier tube
08/15/2012CN202384343U Ultrahigh-cell-density deep groove power metal oxide semiconductor (MOS) device
08/15/2012CN202384342U Field effect semiconductor device
08/15/2012CN202384341U Semiconductor device capable of precisely controlling boron-doped region
08/15/2012CN202384340U SCR structure used for ESD protection
08/15/2012CN202384330U Glass passivated chip with multilayer protection
08/15/2012CN202384318U Firm rectifying diode
08/15/2012CN1941414B A power mosfet and method of making same
08/15/2012CN1917220B Method of manufacturing a semiconductor device
08/15/2012CN1885554B Method for manufacturing electronic component and electronic component
08/15/2012CN1638125B Nonvolatile capacitor of a semiconductor memory device, semiconductor memory and method of operating the same
08/15/2012CN102640295A High mobility monolithic P-I-N diodes
08/15/2012CN102640294A Methods of fabricating metal oxide or metal oxynitride TFTs using wet process for source-drain metal etch
08/15/2012CN102640293A 半导体器件 Semiconductor devices
08/15/2012CN102640292A Semiconductor device and method for manufacturing the same
08/15/2012CN102640291A Self-aligned contacts
08/15/2012CN102640290A Self aligned carbide source/drain FET
08/15/2012CN102640289A PIN diode with sige low contact resistance and method for forming the same
08/15/2012CN102640288A Electrostatic protection device
08/15/2012CN102640282A Nonvolatile semiconductor memory device and erasure method therefor
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