Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2012
08/22/2012CN202394883U High-voltage diode for microwave oven
08/22/2012CN202394882U Insulation half-enclosed three-terminal transistor
08/22/2012CN1980791B Perylene n-type semiconductors and related devices
08/22/2012CN1969380B Group III nitride semiconductor device and epitaxial substrate
08/22/2012CN1841558B Reading phase change memories
08/22/2012CN102648528A Switchable junction with intrinsic diodes with different switching thresholds
08/22/2012CN102648527A Semiconductor device and method for manufacturing same
08/22/2012CN102648526A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/22/2012CN102648525A 显示装置 Display device
08/22/2012CN102648524A Semiconductor device, display device, and electronic appliance
08/22/2012CN102648523A Planar MOSFET with textured channel and gate
08/22/2012CN102648521A 半导体器件 Semiconductor devices
08/22/2012CN102648514A Methods of making semiconductor devices having implanted sidewalls and devices made thereby
08/22/2012CN102646723A Semiconductor device and device with use of it
08/22/2012CN102646722A Low leakage diodes
08/22/2012CN102646721A Semiconductor device and method of testing same
08/22/2012CN102646720A Normally-off semiconductor switches and normally-off jfets
08/22/2012CN102646719A Oxide film, thin-film transistor and preparation method of thin-film transistor
08/22/2012CN102646718A Thin film transistor, display apparatus, and method of manufacturing thin film transistor
08/22/2012CN102646717A Array substrate, manufacturing method thereof and display device
08/22/2012CN102646716A Thin film transistor, manufacturing method of thin film transistor and display
08/22/2012CN102646715A TFT (thin film transistor) and manufacturing method thereof
08/22/2012CN102646714A Thin film transistor, array substrate and preparation method thereof
08/22/2012CN102646713A Pixel structure of thin film transistor liquid crystal display and manufacturing method thereof
08/22/2012CN102646712A Laterally diffused metal oxide semiconductor (LDMOS) and manufacturing method thereof
08/22/2012CN102646711A Super junction vertical double-diffused metal-oxide semiconductor field-effect transistor with P-type buried layer
08/22/2012CN102646710A Super-junction vertical double-diffusion metal oxide semiconductor tube
08/22/2012CN102646709A Rapid super junction vertical double-diffused metal-oxide semiconductor field-effect transistor
08/22/2012CN102646708A Super-junction semiconductor device
08/22/2012CN102646707A Groove type transistor with thick-bottom dielectric layer and manufacturing method of the transistor
08/22/2012CN102646706A High-voltage element and manufacturing method thereof
08/22/2012CN102646705A Metal insulated semi-conductor (MIS) grid GaN base enhancing high electro mobility transistor (HEMT) device and manufacture method
08/22/2012CN102646704A Semiconductor device, power-supply unit, amplifier and method of manufacturing semiconductor device
08/22/2012CN102646703A Epitaxial structure of single crystal indium phosphide (InP) group compound semiconductor film
08/22/2012CN102646702A Semiconductor device, and method of manufacturing semiconductor device
08/22/2012CN102646701A Junction field-effect transistor (JFET) and producing method thereof
08/22/2012CN102646700A Epitaxial structure for nitride high electron mobility transistors of composite buffer layers
08/22/2012CN102646699A Oxide TFT (thin film transistor) and manufacturing method thereof
08/22/2012CN102646698A Semiconductor device and electronic appliance
08/22/2012CN102646637A CMOS (complementary metal oxide semiconductor) device and forming method thereof
08/22/2012CN102646630A TFT-LCD (thin film transistor liquid crystal display) array substrate structure and manufacturing method thereof
08/22/2012CN102646618A Dissecting process for diode device
08/22/2012CN102646609A Semiconductor device, manufacturing method of semiconductor device, and power source device
08/22/2012CN102646602A Polycrystalline film and preparation method thereof and thin-film transistor made of polycrystalline film
08/22/2012CN102646601A Semiconductor structure and manufacturing method thereof
08/22/2012CN102646595A Thin film transistor, manufacturing method and display device thereof
08/22/2012CN102646594A Groove of electrostatic discharge (ESD) circuit and preparation method of groove
08/22/2012CN102646593A Thin film transistor (TFT) and manufacturing method thereof
08/22/2012CN102646592A Thin film field-effect transistor device and preparation method thereof
08/22/2012CN102646581A Semiconductor device and method for manufacturing semiconductor device
08/22/2012CN102646580A Flattening method and grid structure applied in semiconductor element process
08/22/2012CN102646579A Silicon oxide nitride oxide semiconductor (SONOS) structure and manufacturing method
08/22/2012CN102646573A Semiconductor device and manufacturing method thereof
08/22/2012CN102645803A Pixel unit, array substrate, liquid crystal panel, display device and manufacturing methods thereof
08/22/2012CN102194860B Green transistors
08/22/2012CN102142440B Thyristor device
08/22/2012CN102087964B Silicon oxide nitride oxide semiconductor (SONOS) structure and method for forming same
08/22/2012CN102034864B MOS (metal oxide semiconductor) transistor and preparation method thereof
08/22/2012CN102024824B Array field effect transistor
08/22/2012CN102024821B Non-volatile memory device as well as non-volatile memory and manufacturing method thereof
08/22/2012CN102005483B Thin-film transistor
08/22/2012CN101989548B Semiconductor device and manufacturing method thereof
08/22/2012CN101931000B Semiconductor device and method for forming same
08/22/2012CN101916755B Plane rectifier
08/22/2012CN101894866B Collision ionization type field effect transistor of sinking channel and manufacture method thereof
08/22/2012CN101889302B Thin film transistor array substrate, display panel comprising the same, and method for manufacturing thin film transistor array substrate
08/22/2012CN101866953B Low Schottky barrier semiconductor structure and formation method thereof
08/22/2012CN101826531B Semiconductor memory unit, driving method thereof and semiconductor memory
08/22/2012CN101765776B Acceleration sensor
08/22/2012CN101728269B Method for manufacturing PMOS transistor and PMOS transistor
08/22/2012CN101674521B Production process of electroacoustic component
08/22/2012CN101621005B TFT MONOS or SONOS memory cell structure
08/22/2012CN101563780B Low threshold voltage semiconductor device with dual threshold voltage control means
08/22/2012CN101506968B Shielding floating gate tunneling element structure
08/22/2012CN101471263B Method for manufacturing a transistor
08/22/2012CN101317273B Reduced-resistance FINFET and methods of manufacturing the same
08/22/2012CN101142715B Semiconductor device and electronic device having the same
08/22/2012CN101043038B Nonvolatile semiconductor memory device
08/21/2012US8249838 Method and apparatus for modeling memristor devices
08/21/2012US8248849 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
08/21/2012US8248551 Semiconductor device including capacitor line parallel to source line
08/21/2012US8248157 Variable capacitance unit
08/21/2012US8248146 Semiconductor circuit that varies a drain current value by utilizing a degree of freedom of an electron spin and semiconductor device using same
08/21/2012US8247965 Light emitting display device and method for manufacturing the same
08/21/2012US8247909 Semiconductor package device with cavity structure and the packaging method thereof
08/21/2012US8247907 Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
08/21/2012US8247905 Formation of vertical devices by electroplating
08/21/2012US8247903 Semiconductor device
08/21/2012US8247887 Method and surface morphology of non-polar gallium nitride containing substrates
08/21/2012US8247886 Polarization direction of optical devices using selected spatial configurations
08/21/2012US8247882 Method of forming an isolation structure
08/21/2012US8247880 Magnetic memory device and method of fabricating the same
08/21/2012US8247879 Micromechanical device with microfluidic lubricant channel
08/21/2012US8247878 Semiconductor device and method of manufacturing the same
08/21/2012US8247877 Structure with reduced fringe capacitance
08/21/2012US8247876 Semiconductor device
08/21/2012US8247873 Semiconductor device and method for manufacturing the same
08/21/2012US8247871 1T/0C RAM cell with a wrapped-around gate device structure
08/21/2012US8247870 Power MOSFET integration
08/21/2012US8247869 LDMOS transistors with a split gate
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