Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2012
12/20/2012US20120319231 Microelectronic Device Including Shallow Trench Isolation Structures Having Rounded Bottom Surfaces
12/20/2012US20120319227 Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device
12/20/2012US20120319226 Fabrication of robust electrothermal mems with fast thermal response
12/20/2012US20120319219 Epitaxial silicon cmos-mems microphones and method for manufacturing
12/20/2012US20120319218 Apparatuses for generating electrical energy
12/20/2012US20120319217 Semiconductor Devices and Methods of Fabrication Thereof
12/20/2012US20120319216 Semiconductor device and manufacturing method
12/20/2012US20120319215 Semiconductor device and method of manufacturing the same
12/20/2012US20120319214 Structure of metal gate and fabrication method thereof
12/20/2012US20120319213 Semiconductor structure and method for manufacturing the same
12/20/2012US20120319211 Strained channel field effect transistor
12/20/2012US20120319207 Semiconductor device with threshold voltage control and method of fabricating the same
12/20/2012US20120319206 Integrated circuit comprising an isolating trench and corresponding method
12/20/2012US20120319203 Semiconductor device and method of manufacturing the same
12/20/2012US20120319202 High Voltage Device and Manufacturing Method Thereof
12/20/2012US20120319200 Monolithically integrated circuit
12/20/2012US20120319198 Semiconductor device and fabrication method thereof
12/20/2012US20120319197 Field effect transistor and schottky diode structures
12/20/2012US20120319196 Semiconductor device
12/20/2012US20120319195 Semiconductor device and method for manufacturing the same
12/20/2012US20120319194 Semiconductor device and process for producing the same
12/20/2012US20120319193 Manufacturing of a semiconductor device and corresponding semiconductor device
12/20/2012US20120319191 Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective device
12/20/2012US20120319190 Semiconductor device and method for manufacturing the same
12/20/2012US20120319189 High-voltage semiconductor device
12/20/2012US20120319188 Electronic device including a gate electrode and a gate tap and a process of forming the same
12/20/2012US20120319187 Semiconductor device
12/20/2012US20120319186 Memory device and method for fabricating the same
12/20/2012US20120319185 Nand structure and method of manufacturing the same
12/20/2012US20120319184 Methods and devices for shielding a signal line over an active region
12/20/2012US20120319183 Semiconductor device and manufacturing method thereof
12/20/2012US20120319182 Semiconductor device production method and semiconductor device
12/20/2012US20120319181 Semiconductor structure and method for manufacturing the same
12/20/2012US20120319180 Large dimension device and method of manufacturing same in gate last process
12/20/2012US20120319179 Metal gate and fabrication method thereof
12/20/2012US20120319178 Double gate planar field effect transistors
12/20/2012US20120319176 Gated-varactors
12/20/2012US20120319175 Semiconductor device and a method for manufacturing the same
12/20/2012US20120319174 Cmos compatible mems microphone and method for manufacturing the same
12/20/2012US20120319172 Charge-trap based memory
12/20/2012US20120319171 Semiconductor wafer, semiconductor device, and a method of producing a semiconductor wafer
12/20/2012US20120319170 Electronic device and method for producing electronic device
12/20/2012US20120319169 Cmos compatible method for manufacturing a hemt device and the hemt device thereof
12/20/2012US20120319168 Semiconductor device and manufacturing method thereof
12/20/2012US20120319167 Mask-less and Implant Free Formation of Complementary Tunnel Field Effect Transistors
12/20/2012US20120319166 Transistor with buried silicon germanium for improved proximity control and optimized recess shape
12/20/2012US20120319165 Semiconductor device and method of manufacturing same
12/20/2012US20120319164 Semiconductor device
12/20/2012US20120319159 Substrate for light-emitting element, method for manufacturing the same and light-emitting device
12/20/2012US20120319137 Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same
12/20/2012US20120319136 Silicon carbide semiconductor device and method for manufacturing the same
12/20/2012US20120319135 Semiconductor device and method of manufacturing the same
12/20/2012US20120319134 Silicon carbide semiconductor device and method for manufacturing same
12/20/2012US20120319131 Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates
12/20/2012US20120319129 Substrate, epitaxial layer provided substrate, method for producing substrate, and method for producing epitaxial layer provided substrate
12/20/2012US20120319128 Semiconductor structures, devices and engineered substrates including layers of semiconductor material having reduced lattice strain
12/20/2012US20120319127 Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer
12/20/2012US20120319125 Silicon carbide substrate and method of manufacturing the same
12/20/2012US20120319124 Thin film transistor substrate and liquid crystal display device having the same
12/20/2012US20120319121 Method for manufacturing a semiconductor-on-insulator structure having low electrical losses, and corresponding structure
12/20/2012US20120319120 Semiconductor device and manufacturing method thereof
12/20/2012US20120319119 Display substrate and method of manufacturing the same
12/20/2012US20120319118 Display device
12/20/2012US20120319117 El display panel, el display apparatus, and method of manufacturing el display panel
12/20/2012US20120319114 Semiconductor device and method for manufacturing the same
12/20/2012US20120319113 Semiconductor device and method for manufacturing the same
12/20/2012US20120319112 Thin film transistor, thin film transistor panel and methods for manufacturing the same
12/20/2012US20120319110 Semiconductor structure having test and transistor structures
12/20/2012US20120319108 Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
12/20/2012US20120319107 Liquid crystal display device
12/20/2012US20120319106 Semiconductor device and manufacturing method the same
12/20/2012US20120319105 Zinc-tin oxide thin-film transistors
12/20/2012US20120319104 Method for producing circuit board, circuit board and display device
12/20/2012US20120319103 Thin film transistor and method for preparing the same
12/20/2012US20120319102 Semiconductor device and method for manufacturing the same
12/20/2012US20120319101 Manufacturing method of semiconductor device
12/20/2012US20120319100 Semiconductor device and method for manufacturing the same
12/20/2012US20120319096 Semiconductor devices including an electrically percolating source layer and methods of fabricating the same
12/20/2012US20120319083 Nanorod semiconductor device having a contact structure, and method for manufacturing same
12/20/2012US20120319082 Low thermal conductivity matrices with embedded nanostructures and methods thereof
12/20/2012US20120319078 Graphene growth on a non-hexagonal lattice
12/20/2012US20120319054 Semiconductor nanocrystals heterostructures
12/20/2012US20120318350 Dopant material, semiconductor substrate, solar cell element, and process for production of dopant material
12/20/2012DE112011100533T5 Halbleitervorrichtung Semiconductor device
12/20/2012DE112010004400T5 Bildung von Nickelsilicid mit Gestaffelter PT-Zusammensetzung Formation of nickel silicide with Staggered PT-composition
12/20/2012DE102012210053A1 Halbleitervorrichtung, die einen Bipolartransistor mit isolierter Gate-Elektrode und eine Diode beinhaltet A semiconductor device including a bipolar transistor with insulated gate electrode and a diode
12/20/2012DE102011104749A1 Reversible electric energy accumulator of high energy density useful for storing electric charges in volume of two compact semiconductor electrodes of equal conductivity, comprises flat and compact semiconductors
12/20/2012DE102011077661A1 Metallgateelektrodenstrukturen mit großem Epsilon, die durch eine Reduzierung des Gatefüllaspektverhältnisses in einer Austauschgatetechnologie hergestellt sind Metal gate electrode structures with large Epsilon, which are prepared by a reduction of the Gatefüllaspektverhältnisses in a replacement gate technology
12/20/2012DE102008035537B4 Halbleitervorrichtung und Verfahren zu ihrer Bildung Semiconductor device and methods for their formation
12/20/2012CA2836156A1 Phase qubit cell having enhanced coherence
12/19/2012EP2535940A1 Bipolar diode and method for manufacturing the same
12/19/2012EP2535939A1 Thin film transistor
12/19/2012EP2535938A2 Recessed gate field effect transistor
12/19/2012EP2535937A1 Electronic device
12/19/2012EP2535936A1 Thin film transistor, thin film transistor panel and methods for manufacturing the same
12/19/2012EP2535935A2 Semiconductor power amplifier
12/19/2012EP2535924A1 Integrated circuit comprising an insulation trench and corresponding method
12/19/2012EP2534690A1 Systems and methods for a continuous-well decoupling capacitor
12/19/2012EP2534689A1 Memory cell formed using a recess and methods for forming the same
12/19/2012EP2534685A1 Scalable construction for lateral semiconductor components having high current-carrying capacity
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