Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2012
12/06/2012US20120305944 Semiconductor element
12/06/2012US20120305943 Silicon carbide semiconductor device and method for manufacturing same
12/06/2012US20120305940 Defect Free Si:C Epitaxial Growth
12/06/2012US20120305936 Semiconductor device
12/06/2012US20120305932 Lateral trench mesfet
12/06/2012US20120305931 Gold-free ohmic contacts
12/06/2012US20120305930 Semiconductor device, and manufacturing method for same
12/06/2012US20120305929 Beol compatible fet structrure
12/06/2012US20120305928 Methodology for fabricating isotropically recessed source regions of cmos transistors
12/06/2012US20120305927 Display device
12/06/2012US20120305924 Semiconductor device and method of manufacturing thereof
12/06/2012US20120305923 Display device
12/06/2012US20120305921 Thin film transistor, manufacturing method of thin film transistor, and organic light emitting diode display including the same
12/06/2012US20120305920 Semiconductor device and manufacturing method thereof, display apparatus and electronic apparatus
12/06/2012US20120305919 Fullerene derivatives and optoelectronic devices utilizing the same
12/06/2012US20120305918 Perovskite semiconductor thin film and method of making thereof
12/06/2012US20120305915 Field-effect transistor and method for fabricating field-effect transistor
12/06/2012US20120305914 Semiconductor device, display device, and electronic appliance
12/06/2012US20120305913 Method for manufacturing semiconductor device
12/06/2012US20120305912 Display device and electronic device including the same
12/06/2012US20120305910 Hybrid thin film transistor, manufacturing method thereof and display panel having the same
12/06/2012US20120305893 Transistor device
12/06/2012US20120305891 Graphene channel transistors and method for producing same
12/06/2012US20120305886 Nanowire fet with trapezoid gate structure
12/06/2012US20120305876 Schottky diode, resistive memory device having schottky diode and method of manufacturing the same
12/06/2012US20120305874 Vertical Diodes for Non-Volatile Memory Device
12/06/2012DE112011100159T9 Einheit mit extrem dünnem SOI mit dünnem BOX und Metallrückgate Unit with extremely thin SOI and BOX with thin metal back gate
12/06/2012DE112010005101T5 Epitaxial-wafer und halbleiterelement Epitaxial wafer and semiconductor element
12/06/2012DE112009001477B4 Kostengünstige Substrate mit Hochwiderstands-Eigenschaften und Verfahren zum Herstellen derselben -Cost substrates with high-resistance properties and method of making same
12/06/2012DE10393687B4 Doppelgatehalbleiterbauelement mit separaten Gates und Verfahren zur Herstellung des Doppelgatehalbleiterbauelements Double gate semiconductor device having separate gates and method for producing the double-gate semiconductor device
12/06/2012DE10350160B4 Verfahren zur Herstellung eines Sperrschicht-Feldeffekttransistors mit hoher Durchbruchspannung A method for producing a junction field effect transistor with high breakdown voltage
12/06/2012DE102012209429A1 Leistungshalbleiterbauelement mit hoher spannungsfestigkeit Power semiconductor device having high dielectric strength
12/06/2012DE102012209284A1 Halbleitervorrichtung Semiconductor device
12/06/2012DE102012209192A1 Transistor mit steuerbaren Kompensationsgebieten Transistor taxable compensation areas
12/06/2012DE102012209188A1 Schaltungsanordnung mit einem einstellbaren Transistorbauelement A circuit arrangement with an adjustable transistor device
12/06/2012DE102012104795A1 Lateraler Graben MESFET Lateral trench MESFET
12/06/2012DE102011076696A1 Verfahren zur Leistungssteigerung in Transistoren durch Vorsehen eines eingebetteten verformungsinduzierenden Halbleitermaterials auf der Grundlage einer Saatschicht und entsprechendes Halbleiterbauelement Performance improvement processes in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layer and corresponding semiconductor device
12/06/2012DE102011076695A1 Transistoren mit eingebettetem verformungsinduzierenden Material, das in durch einen Oxidationsätzprozess erzeugten Aussparungen ausgebildet ist Transistors with embedded strain-inducing material that is formed in cavities created by a Oxidationsätzprozess
12/06/2012DE102011004322B4 Verfahren zur Herstellung eines Halbleiterbauelements mit selbstjustierten Kontaktelementen und einer Austauschgateelektrodenstruktur A process for producing a semiconductor device with self-aligned contact elements and a replacement gate electrode structure
12/06/2012DE102010064288B4 Halbleiterbauelement mit Kontaktelementen mit silizidierten Seitenwandgebieten Semiconductor component with contact elements with silicided sidewall areas
12/06/2012DE102009044670B4 Bipolares Halbleiterbauelement und Herstellungsverfahren A bipolar semiconductor device and manufacturing method
12/06/2012DE102009044494B4 Halbleiterdiode und Brückenschaltung Semiconductor diode and bridge circuit
12/06/2012DE102006020210B4 Dünnschichttransistor Thin-film transistor
12/06/2012DE102005009976B4 Transistor mit Dotierstoff tragendem Metall im Source- und Drainbereich Transistor with dopant wearing metal in the source and drain regions
12/06/2012DE10066412B4 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
12/06/2012CA2834891A1 Graphene magnetic tunnel junction spin filters and methods of making
12/05/2012EP2530747A1 Nitride semiconductor element and manufacturing method therefor
12/05/2012EP2530721A1 Semiconductor device
12/05/2012EP2530720A1 Manufacture methods of thin film transistor and array substrate and mask
12/05/2012EP2530719A2 Alloyed semiconductor quantum dots and concentration-gradient alloyed quantum dots, series comprising the same and methods related thereto
12/05/2012EP2530718A1 Silicon carbide semiconductor device and production method therefor
12/05/2012EP2530714A2 Active tiling placement for improved latch-up immunity
12/05/2012EP2530444A1 Pressure sensor
12/05/2012EP2530070A1 Dibenzofluoranthene compound and organic thin-film solar cell using same
12/05/2012EP2529403A1 Joined nanostructures and methods therefor
12/05/2012EP2529397A1 Semiconductor structure having silicon cmos transistors with column iii-v transistors on a common substrate
12/05/2012CN202585425U Double-channel GPP (Glass Passivation Pellet) passivation protection diode chip
12/05/2012CN202585424U Transistor
12/05/2012CN202585423U Flat type thyristor resistant to high temperature
12/05/2012CN202585422U Semiconductor device with overvoltage protection and bidirectional polarity device based on device
12/05/2012CN202585421U Semiconductor structure
12/05/2012CN202585416U Semiconductor device with overvoltage protection and bidirectional polarity device based on device
12/05/2012CN202585394U Single massive diode
12/05/2012CN102812555A Semiconductor device and method for manufacturing the same
12/05/2012CN102812554A Normally-off gallium nitride-based semiconductor devices
12/05/2012CN102812547A Semiconductor device
12/05/2012CN102812541A Flexible semiconductor device and method for producing same, image display device using the flexible semiconductor device and manufacturing method thereof
12/05/2012CN102812540A Flexible semiconductor device and method for producing same, image display device using the flexible semiconductor device and manufacturing method thereof
12/05/2012CN102812537A Semiconductor device and method for producing same
12/05/2012CN102810571A Substrate, display device and substrate preparation method
12/05/2012CN102810570A Thin film transistor structure for liquid crystal display
12/05/2012CN102810569A Polycrystalline silicon thin film transistor capable of driving in nickel and adjusting threshold voltage simultaneously
12/05/2012CN102810568A Stress silicon (Si) vertical-channel P-channel metal-oxide semiconductor (PMOS) device and preparation method
12/05/2012CN102810567A Super-junction vertical double-diffusion metal-oxide-semiconductor (VDMOS) device with dynamic charge balance
12/05/2012CN102810566A Power semiconductor device with high blocking voltage capacity
12/05/2012CN102810565A Semiconductor power device
12/05/2012CN102810564A Radio frequency device and manufacturing method thereof
12/05/2012CN102810563A Lateral trench MESFET
12/05/2012CN102810562A Semiconductor device and manufacturing method thereof
12/05/2012CN102810561A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/05/2012CN102810560A Split gate storage and manufacturing method thereof
12/05/2012CN102810559A Heterostructure field transistor with reverse conducting function and manufacturing method of heterostructure field transistor
12/05/2012CN102810558A Thin film transistor, array substrate and preparation methods of thin film transistor and array substrate, and liquid crystal display
12/05/2012CN102810557A Method for manufacturing semiconductor device
12/05/2012CN102810556A New and improved edge termination configuration for high voltage semiconductor power device
12/05/2012CN102810555A Germanium tin tunneling field effect transistor and preparation method thereof
12/05/2012CN102810554A Schottky diode, resistive memory device having schottky diode and method of manufacturing the same
12/05/2012CN102810553A Groove type field oxide power MOS (metal oxide semiconductor) device with ultra low conduction resistance
12/05/2012CN102810552A Transistor with controllable compensation regions
12/05/2012CN102810541A Memory and manufacturing method thereof
12/05/2012CN102810540A LDMOS (laterally diffused metal oxide semiconductor) device with current sampling function
12/05/2012CN102810501A Well region forming method and semiconductor substrate
12/05/2012CN102810483A Oxide semiconductor film and preparation method thereof, thin film transistor and preparation method
12/05/2012CN102810477A Semiconductor device and method for forming same
12/05/2012CN102810475A High-density groove-type power semiconductor structure and manufacturing method thereof
12/05/2012CN102809857A Liquid crystal display panel and liquid crystal display device
12/05/2012CN102226997B Light emitting element
12/05/2012CN102214679B Self-isolation high-voltage half-bridge structure formed in silicon on insulator
12/05/2012CN102169893B Horizontal channel SOI LIGBT device unit with P buried layer
12/05/2012CN102129995B Method for forming metal silicide contact layer and field effect transistor
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