Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2012
12/27/2012US20120326275 Capacitors
12/27/2012US20120326274 Semiconductor structure having an integrated quadruple-wall capacitor for embedded dynamic random access memory (edram) and method to form the same
12/27/2012US20120326273 Method of manufacturing semiconductor device and semiconductor device
12/27/2012US20120326271 Secondary device integration into coreless microelectronic device packages
12/27/2012US20120326270 Interdigitated vertical native capacitor
12/27/2012US20120326268 Silicon epitaxial wafer, method for manufacturing the same, bonded soi wafer and method for manufacturing the same
12/27/2012US20120326262 Semiconductor Integrated Circuit Device and A Method of Manufacturing the Same
12/27/2012US20120326261 Semiconductor structure and manufacturing method for the same
12/27/2012US20120326253 Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories
12/27/2012US20120326252 Semiconductor memory device
12/27/2012US20120326251 Semiconductor memory device
12/27/2012US20120326250 Spin transfer torque cell for magnetic random access memory
12/27/2012US20120326249 Mems microphone and method for manufacture
12/27/2012US20120326248 Methods for cmos-mems integrated devices with multiple sealed cavities maintained at various pressures
12/27/2012US20120326246 Semiconductor device and manufacturing method of the same
12/27/2012US20120326245 Inversion thickness reduction in high-k gate stacks formed by replacement gate processes
12/27/2012US20120326244 Semiconductor device and method for manufacturing the same
12/27/2012US20120326243 Transistor having aluminum metal gate and method of making the same
12/27/2012US20120326237 Low-profile local interconnect and method of making the same
12/27/2012US20120326236 Multi-gate transistor having sidewall contacts
12/27/2012US20120326233 Method to reduce threshold voltage variability with through gate well implant
12/27/2012US20120326232 Mosfet with recessed channel film and abrupt junctions
12/27/2012US20120326231 Mosfet and method for manufacturing the same
12/27/2012US20120326229 Trench Transistor and Manufacturing Method of the Trench Transistor
12/27/2012US20120326228 Self-aligned carbon electronics with embedded gate electrode
12/27/2012US20120326227 Method of making an insulated gate semiconductor device and structure
12/27/2012US20120326226 Superjunction device and method for manufacturing the same
12/27/2012US20120326225 Non-volatile memory device
12/27/2012US20120326223 Semiconductor memory device and method for manufacturing same
12/27/2012US20120326222 Memory structure and fabricating method thereof
12/27/2012US20120326221 Multi-tiered semiconductor devices and associated methods
12/27/2012US20120326220 Integrated Circuits With Sidewall Nitridation
12/27/2012US20120326217 Semiconductor device including multiple metal semiconductor alloy region and a gate structure covered by a continuous encapsulating layer
12/27/2012US20120326216 Devices and methods to optimize materials and properties for replacement metal gate structures
12/27/2012US20120326215 Method for fabrication of iii-nitride device and the iii-nitride device thereof
12/27/2012US20120326214 Semiconductor device and method for fabricating the same
12/27/2012US20120326212 HIGH k GATE STACK ON III-V COMPOUND SEMICONDUCTORS
12/27/2012US20120326210 Method of making semiconductor materials and devices on silicon substrate
12/27/2012US20120326209 Semiconductor device and method of producing the same
12/27/2012US20120326208 Pressure contact semiconductor device
12/27/2012US20120326207 Semiconductor device and manufacturing method
12/27/2012US20120326168 Transistor with buried silicon germanium for improved proximity control and optimized recess shape
12/27/2012US20120326167 Semiconductor device and method of manufacturing the same
12/27/2012US20120326166 Semiconductor device and method for manufacturing same
12/27/2012US20120326165 Hemt including ain buffer layer with large unevenness
12/27/2012US20120326164 Betavoltaic apparatus and method
12/27/2012US20120326163 Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof
12/27/2012US20120326162 Process for forming repair layer and mos transistor having repair layer
12/27/2012US20120326161 Nitride semiconductor element and manufacturing method therefor
12/27/2012US20120326160 Semiconductor device having nitride semiconductor layer
12/27/2012US20120326158 Flat panel display and method of manufacturing the same
12/27/2012US20120326157 Method of Manufacturing Thin Film Transistor, Thin Film Transistor Manufactured Using the Method, Method of Manufacturing Organic Light-Emitting Display Apparatus, and Organic Light-Emitting Display Apparatus Manufactured Using the Method
12/27/2012US20120326156 Organic light-emitting display apparatus and method of manufacturing organic light-emitting display apparatus
12/27/2012US20120326155 Semiconductor structure and method for manufacturing the same
12/27/2012US20120326154 Manufacturing method of thin film transistor and thin film transistor, and display
12/27/2012US20120326153 Thin film transistor array panel with overlapping floating electrodes and pixel electrodes
12/27/2012US20120326152 Thin film transistor substrate, display panel having the same and method of manufacturing
12/27/2012US20120326149 Protecting Semiconducting Oxides
12/27/2012US20120326148 Thin film transistor array panel and manufacturing method thereof
12/27/2012US20120326146 Sacrificial Wafer Probe Pads Through Seal Ring for Electrical Connection to Circuit Inside an Integrated Circuit
12/27/2012US20120326144 Thin film transistor substrate and method for manufacturing same
12/27/2012US20120326143 Light-Emitting Device and Manufacturing Method of the Light-Emitting Device
12/27/2012US20120326129 Metal-free integrated circuits comprising graphene and carbon nanotubes
12/27/2012US20120326128 Graphene-layered structure, method of preparing the same, and transparent electrode and transistor including graphene-layered structure
12/27/2012US20120326126 Graphene or Carbon Nanotube Devices with Localized Bottom Gates and Gate Dielectric
12/27/2012US20120326125 Deposition On A Nanowire Using Atomic Layer Deposition
12/27/2012US20120326123 Apparatus and methods for improving parallel conduction in a quantum well device
12/27/2012US20120326122 Epitaxial wafer, photodiode, optical sensor device, and methods for producing epitaxial wafer and photodiode
12/27/2012US20120326115 Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device
12/27/2012US20120325296 Graphene-on-substrate and transparent electrode and transistor including the graphene-on-substrate
12/27/2012DE112009005299T5 Halbleitervorrichtung Semiconductor device
12/27/2012DE10202274B4 Integrierte Halbleiterschaltungsanordnung Semiconductor integrated circuit device
12/27/2012DE102012105507A1 Trench-Transistor und Verfahren zu dessen Herstellung Trench transistor and method of producing the
12/27/2012DE102011084642A1 Vertikaler Bipolartransistor mit lateralem Kollektor-Driftgebiet A vertical bipolar transistor with a lateral collector drift region
12/27/2012DE102011051315A1 Electronic switch e.g. n-channel MOSFET, for controlling e.g. windscreen wiper in automobile industry, has suppresser diode switchable parallel to switch to protect against over-voltage, where suppresser diode is integrated into housing
12/27/2012DE102011003660A1 Verfahren zum Herstellen einer Siliziumcarbidhalbleitervorrichtung A method of manufacturing a Siliziumcarbidhalbleitervorrichtung
12/27/2012CA2845768A1 Display device and method for manufacturing same
12/27/2012CA2840218A1 System and method for providing a carbon nanotube mixer
12/26/2012EP2538446A2 Wide bandgap transistors with multiple field plates
12/26/2012EP2538445A2 Manufacturing method of a III-nitride device and associated III-nitride device
12/26/2012EP2538444A1 Silicon carbide insulated gate semiconductor element and method for producing same
12/26/2012EP2538435A1 Epitaxial substrate and method for producing same
12/26/2012EP2538434A1 Epitaxial substrate and method for producing same
12/26/2012EP2537185A1 Field effect transistor, display element, image display device, and system
12/26/2012EP2537184A2 Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming
12/26/2012EP2537156A2 Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
12/26/2012EP2537155A2 Power switch with active snubber
12/26/2012EP1005079B1 Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitry
12/26/2012CN202633321U Double-schottky junction zinc oxide semiconductor thin film transistor
12/26/2012CN202633320U Power metal-oxide-semiconductor field effect transistor
12/26/2012CN202633319U High-voltage metal-oxide semiconductor tube based on SOI substrate
12/26/2012CN202633318U Silicon-based grapheme field effect transistor
12/26/2012CN202633317U Semiconductor arrester with protective casing
12/26/2012CN202633316U Pulse power thyristor
12/26/2012CN202633315U Insulated gate bipolar transistor
12/26/2012CN202633310U Array substrate and display device
12/26/2012CN202633267U Vibration-resistant thyristor
12/26/2012CN202633241U Transistor
12/26/2012CN1956491B Method for driving semiconductor device, method and apparatus for driving load, and electronic apparatus
12/26/2012CN102845134A Donor substrate for transfer, device manufacturing method and organic el element
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